公开(公告)号：US5877540A

公开(公告)日：1999-03-02

申请号：US766856

申请日：1996-12-13

申请人： Hiroshi Naruse ,  Hiroyuki Sugaya ,  Hidenori Saihara ,  Yoshiro Baba

发明人： Hiroshi Naruse ,  Hiroyuki Sugaya ,  Hidenori Saihara ,  Yoshiro Baba

IPC分类号： H01L29/73 ,  H01L21/20 ,  H01L21/331 ,  H01L21/76 ,  H01L29/10 ,  H01L29/732 ,  H01L27/082 ,  H01L27/102 ,  H01L29/70

CPC分类号： H01L29/66287 ,  H01L29/1004

摘要： A semiconductor device. A semiconductor substrate has a first conductivity. A first insulating layer is on the semiconductor substrate and has an opening so that a portion of the semiconductor substrate is exposed. A semiconductor layer has a second conductivity on the portion. A region in said semiconductor layer prevents a leakage current caused by a minute defect and faceting.

摘要翻译： 半导体器件。 半导体衬底具有第一导电性。 第一绝缘层位于半导体衬底上，并且具有使半导体衬底的一部分露出的开口。 半导体层在该部分上具有第二导电性。 所述半导体层中的区域防止由微小缺陷引起的漏电流。

公开(公告)号：US5864180A

公开(公告)日：1999-01-26

申请号：US28672

申请日：1998-02-24

申请人： Shizue Hori ,  Yoshiro Baba ,  Hiroyuki Sugaya ,  Hiroshi Naruse

发明人： Shizue Hori ,  Yoshiro Baba ,  Hiroyuki Sugaya ,  Hiroshi Naruse

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L29/04 ,  H01L21/36

CPC分类号： H01L21/2022 ,  H01L29/045 ,  Y10S257/923

摘要： A semiconductor device and a method for manufacturing the same, in which a leak current generated in a pn junction formed between a silicon substrate and an epitaxial layer can be reduced. A silicon oxide film is formed on a silicon substrate having a (100) crystal plane. The silicon oxide film is patterned to form an opened portion and an inclined surface on a pattern edge of the silicon oxide film. The inclined surface forms an angle of 54.74.+-.5.degree. with the silicon substrate. An epitaxial layer is formed in the opened portion by selective epitaxial growth.

摘要翻译： 可以减少在硅衬底和外延层之间形成的pn结中产生的漏电流的半导体器件及其制造方法。 在具有（100）晶面的硅衬底上形成氧化硅膜。 图案化氧化硅膜以在氧化硅膜的图案边缘上形成开口部分和倾斜表面。 倾斜表面与硅衬底形成54.74 +/- 5°的角度。 通过选择性外延生长在开口部分形成外延层。

公开(公告)号：US5654483A

公开(公告)日：1997-08-05

申请号：US575091

申请日：1995-12-19

申请人： Chiyuki Kikuchi ,  Hiroshi Naruse ,  Masaru Wada ,  Teruyuki Nagata

发明人： Chiyuki Kikuchi ,  Hiroshi Naruse ,  Masaru Wada ,  Teruyuki Nagata

IPC分类号： C07C213/02 ,  C07C213/08 ,  C07C217/84 ,  C07C209/04 ,  C07C209/18

CPC分类号： C07C213/02 ,  C07C213/08 ,  C07C217/84

摘要： A process for producing an alkoxy-substituted tri-phenylamine comprising reacting an alkoxy-substituted cyclohexanone with a diphenylamine or an aniline, while forming said cyclohexanone in the same system from an alkoxy-substituted phenol by using said phenol as a hydrogen acceptor, in the presence of a hydrogen transfer catalyst and a catalytic amount of the alkoxy-substituted cyclohexanone corresponding to the alkoxy-substituted phenol used for the reaction, or after converting partially the alkoxy-substituted phenol to a catalytic amount of the alkoxy-substituted cyclohexanone under a hydrogen pressure in the presence of a hydrogen transfer catalyst, wherein a surface-supported catalyst is used as the hydrogen transfer catalyst.

摘要翻译： 一种制备烷氧基取代的三苯胺的方法，包括使烷氧基取代的环己酮与二苯胺或苯胺反应，同时通过使用所述苯酚作为氢受体，从烷氧基取代的苯酚形成所述环己酮，同时在 存在氢转移催化剂和催化量的对应于用于反应的烷氧基取代的苯酚的烷氧基取代的环己酮，或在氢气下部分将烷氧基取代的苯酚转化为催化量的烷氧基取代的环己酮之后 在氢转移催化剂存在下的压力，其中使用表面负载的催化剂作为氢转移催化剂。

公开(公告)号：US5594149A

公开(公告)日：1997-01-14

申请号：US633533

申请日：1996-04-17

申请人： Hiroshi Naruse ,  Hideki Mizuta ,  Shinichi Umeda ,  Teruyuki Nagata

发明人： Hiroshi Naruse ,  Hideki Mizuta ,  Shinichi Umeda ,  Teruyuki Nagata

IPC分类号： C07C275/14 ,  C07D233/34 ,  C07C273/18 ,  C07D233/32

CPC分类号： C07D233/34 ,  C07C275/14

摘要： A novel bis-urea compound, preparation process of the compound, and preparation process of 1,3-dialkyl-2-imidazolidinone are disclosed and the disclosure provides a novel preparation process of 1,3-dialkyl-2-imidazolidinone and simultaneously enables effective utilization of N,N',N"-trialkyldiethylentriamine which lacks a large amount use and is desired to develop new application.

摘要翻译： 公开了一种新的双脲化合物，该化合物的制备方法和1,3-二烷基-2-咪唑烷酮的制备方法，本公开提供了1,3-二烷基-2-咪唑烷酮的新型制备方法，同时使得有效 利用缺乏大量使用的N，N'，N“ - 三烷基二乙基三胺，需要开发新的应用。

公开(公告)号：US5102826A

公开(公告)日：1992-04-07

申请号：US610216

申请日：1990-11-09

申请人： Jiro Ohshima ,  Shin-ichi Taka ,  Toshiyo Motozima ,  Hiroshi Naruse

发明人： Jiro Ohshima ,  Shin-ichi Taka ,  Toshiyo Motozima ,  Hiroshi Naruse

IPC分类号： H01L21/265 ,  H01L21/28 ,  H01L21/285

CPC分类号： H01L21/26506 ,  H01L21/28518 ,  Y10S148/106

摘要： According to the method of manufacturing a semiconductor device of the present invention, an insulation film is formed on a silicon substrate, and a resist film having a predetermined pattern is formed on the insulation film, followed by forming an opening on the insulation film with the resist film performing as a mask. Then, an impurity having conductivity are implanted into said silicon substrate with the resist film performing as a mask and silicon ions are implanted into the silicon substrate with the resist film performing as a mask. After that, the resist film is removed. Further, a refractory metal film which covers at least the opening is formed. Moveover, a diffusion layer which causes electrical activation of the impurity having conductivity is formed by annealing, followed by formation a silicide layer at where the surfaces of the silicon substrate and the metal film meet.

摘要翻译： 根据本发明的半导体器件的制造方法，在硅衬底上形成绝缘膜，在绝缘膜上形成具有预定图案的抗蚀剂膜，然后在绝缘膜上形成开口 作为掩模的抗蚀膜。 然后，将具有导电性的杂质注入到所述硅衬底中，并以抗蚀剂膜作为掩模将硅离子注入到硅衬底中，并将硅离子注入到硅衬底中。 之后，除去抗蚀剂膜。 此外，形成至少覆盖开口的难熔金属膜。 通过退火形成引起具有导电性的杂质的电活化的扩散层，随后在硅衬底和金属膜的表面相遇处形成硅化物层。

公开(公告)号：US4966384A

公开(公告)日：1990-10-30

申请号：US346463

申请日：1989-05-02

申请人： Terumasa Endo ,  Hiroshi Naruse ,  Hideo Nagaya ,  Hideaki Tsushima ,  Isamu Koyama ,  Yoji Matsumoto

发明人： Terumasa Endo ,  Hiroshi Naruse ,  Hideo Nagaya ,  Hideaki Tsushima ,  Isamu Koyama ,  Yoji Matsumoto

IPC分类号： B60G99/00 ,  F16F1/387 ,  B60G13/00 ,  B60G11/10

CPC分类号： B60G99/00 ,  F16F1/387

摘要： A suspension member mounting structure for mounting on a vehicle body a suspension member, with which left and right suspension arms each supporting a wheel are connected, through a front cushion group and a rear cushion group. The front cushion group has two cushion mounts attached to two positions of the suspension member in front of a rotary axis of the wheels and the rear cushion group has two cushion mounts attached to two positions of the suspension member behind the rotary axis of the wheels. Each cushion mount of the front cushion group is disposed to have a hole first, through which a bolt extends, extending vertically of the vehicle body and each cushion mount of the rear cushion group is disposed to have a second hole, through which a bolt extends, extending longitudinally of the vehicle body.

摘要翻译： 一种用于在车身上安装悬挂构件的悬挂构件安装结构，悬架构件通过前缓冲组和后缓冲组连接，左和右悬架臂各自支撑轮。 前缓冲组具有两个缓冲安装座，其安装在悬挂构件的两个位置，在轮的旋转轴线前面，后缓冲组具有两个缓冲安装座，其安装在车轮旋转轴线后面的悬挂构件的两个位置上。 前缓冲组的每个缓冲支架设置成具有第一孔，螺栓延伸穿过该孔，车身垂直延伸，后缓冲组的每个缓冲垫安置成具有第二孔，螺栓延伸穿过该第二孔 ，延伸到车身纵向。

公开(公告)号：US4920122A

公开(公告)日：1990-04-24

申请号：US210312

申请日：1988-06-23

申请人： Hiroshi Naruse ,  Masashi Takesada ,  Osamu Hayaishi ,  Yasuyoshi Watanabe

发明人： Hiroshi Naruse ,  Masashi Takesada ,  Osamu Hayaishi ,  Yasuyoshi Watanabe

IPC分类号： C07D475/04 ,  A61K31/40 ,  A61K31/505 ,  A61K31/519 ,  A61P25/00 ,  A61P25/18 ,  A61P43/00

CPC分类号： A61K31/505

摘要： A pharmaceutical composition for the treatment of infantile autism which contains tetrahydrobiopterin or a derivative thereof as a major effective ingredient and 5-hydroxytryptophan and/or L-DOPA as an optional auxiliary effective ingredient is provided.