公开(公告)号：US08421067B2

公开(公告)日：2013-04-16

申请号：US12846572

申请日：2010-07-29

申请人： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Junichiro Sakata

IPC分类号： H01L29/12

CPC分类号： H01L29/78696 ,  H01L27/1225 ,  H01L29/7869

摘要： A semiconductor device having a structure which enables sufficient reduction in parasitic capacitance is provided. In addition, the operation speed of thin film transistors in a driver circuit is improved. In a bottom-gate thin film transistor in which an oxide insulating layer is in contact with a channel formation region in an oxide semiconductor layer, a source electrode layer and a drain electrode layer are formed in such a manner that they do not overlap with a gate electrode layer. Thus, the distance between the gate electrode layer and the source electrode layer and between the gate electrode layer and the drain electrode layer are increased; accordingly, parasitic capacitance can be reduced.

摘要翻译： 提供具有能够充分降低寄生电容的结构的半导体器件。 此外，提高了驱动电路中薄膜晶体管的操作速度。 在其中氧化物绝缘层与氧化物半导体层中的沟道形成区域接触的底栅薄膜晶体管中，以与它们不重叠的方式形成源电极层和漏电极层 栅电极层。 因此，栅极电极层与源电极层之间以及栅极电极层和漏极电极层之间的距离增加; 因此，可以减小寄生电容。

公开(公告)号：US08309961B2

公开(公告)日：2012-11-13

申请号：US12897419

申请日：2010-10-04

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC分类号： H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/78696

摘要： In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.

摘要翻译： 在使用氧化物半导体形成沟道形成区域的沟道保护薄膜晶体管中，使用通过热处理脱水或脱氢的氧化物半导体层作为有源层，包括纳米晶体的晶体区域包含在表面 并且其余部分是无定形的或由非晶/非晶体和微晶体的混合物形成，其中非晶区域用微晶点缀。 通过使用具有这种结构的氧化物半导体层，可以防止由于进入水分或从表面部分去除氧气或从表面部分排出而引起的n型变化和产生寄生通道，并且与源极接触电阻 可以减少漏电极。

公开(公告)号：US20110227060A1

公开(公告)日：2011-09-22

申请号：US12887674

申请日：2010-09-22

申请人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Shunpei Yamazaki

发明人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Shunpei Yamazaki

IPC分类号： H01L29/786

CPC分类号： H01L21/02565 ,  H01L21/02631 ,  H01L21/477 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

摘要： It is an object to provide a thin film transistor having favorable electric characteristics and high reliability and a semiconductor device which includes the thin film transistor as a switching element. An In—Ga—Zn—O-based film having an incubation state that shows an electron diffraction pattern, which is different from a conventionally known amorphous state where a halo shape pattern appears and from a conventionally known crystal state where a spot appears clearly, is formed. The In—Ga—Zn—O-based film having an incubation state is used for a channel formation region of a channel etched thin film transistor.

摘要翻译： 本发明的目的是提供具有良好的电特性和高可靠性的薄膜晶体管，以及包括作为开关元件的薄膜晶体管的半导体器件。 具有显示电子衍射图案的温度状态的In-Ga-Zn-O系膜与常规已知的晕圈形状图案出现的非晶状态以及现有的已知的斑点出现明显的晶体状态不同， 形成了。 具有孵育状态的In-Ga-Zn-O系膜用于沟道蚀刻薄膜晶体管的沟道形成区域。

公开(公告)号：US20110084273A1

公开(公告)日：2011-04-14

申请号：US12900145

申请日：2010-10-07

申请人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Junichiro Sakata

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/42384 ,  H01L29/78606 ,  H01L29/78696

摘要： One of objects is to provide a semiconductor device with stable electric characteristics, in which an oxide semiconductor is used. The semiconductor device includes a thin film transistor including an oxide semiconductor layer, and a silicon oxide layer over the thin film transistor. The thin film transistor includes a gate electrode layer, a gate insulating layer whose thickness is equal to or larger than 100 nm and equal to or smaller than 350 nm, the oxide semiconductor layer, a source electrode layer and a drain electrode layer. In the thin film transistor, the difference of the threshold voltage value is 1 V or less between before and after performance of a measurement in which the voltage of 30 V or −30 V is applied to the gate electrode layer at a temperature of 85° C. for 12 hours.

摘要翻译： 其目的之一是提供具有稳定电特性的半导体器件，其中使用氧化物半导体。 该半导体器件包括薄膜晶体管，该薄膜晶体管包括氧化物半导体层，以及位于薄膜晶体管上的氧化硅层。 薄膜晶体管包括栅极电极层，厚度等于或大于100nm且等于或小于350nm的栅极绝缘层，氧化物半导体层，源极电极层和漏极电极层。 在薄膜晶体管中，在将温度为85°的栅极电极层施加30V或-30V的电压的测量之前和之后，阈值电压值的差为1V以下 C.持续12小时。

公开(公告)号：US20110057188A1

公开(公告)日：2011-03-10

申请号：US12872823

申请日：2010-08-31

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Kosei Noda ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Kosei Noda ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Hotaka Maruyama

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/78606 ,  H01L23/5329 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

摘要翻译： 本发明的目的是制造具有电特性稳定的薄膜晶体管的高可靠性的半导体器件。 覆盖薄膜晶体管的氧化物半导体层的绝缘层含有硼元素或铝元素。 通过使用含有硼元素或铝元素的硅靶或氧化硅靶的溅射法形成含有硼元素或铝元素的绝缘层。 或者，代替硼元素的含有锑（Sb）元素或磷（P）元素的绝缘层覆盖薄膜晶体管的氧化物半导体层。

公开(公告)号：US20100193783A1

公开(公告)日：2010-08-05

申请号：US12692794

申请日：2010-01-25

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hideyuki Kishida

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hideyuki Kishida

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L29/12

CPC分类号： H01L29/7869 ,  G02F1/1362 ,  G02F2202/10 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225

摘要： In forming a thin film transistor, an oxide semiconductor layer is used and a cluster containing a titanium compound whose electrical conductance is higher than that of the oxide semiconductor layer is formed between the oxide semiconductor layer and a gate insulating layer.

摘要翻译： 在形成薄膜晶体管时，使用氧化物半导体层，并且在氧化物半导体层和栅极绝缘层之间形成含有电导率高于氧化物半导体层的导电性的钛化合物的簇。

公开(公告)号：US07745989B2

公开(公告)日：2010-06-29

申请号：US11473332

申请日：2006-06-23

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Ryoji Nomura

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Ryoji Nomura

IPC分类号： H01L51/54 ,  H01J1/62 ,  H01J63/04

CPC分类号： H01L51/52 ,  H01L51/5048 ,  Y10S428/917

摘要： It is an object of the present invention to provide a light emitting element with a low driving voltage. In a light emitting element, a first electrode; and a first composite layer, a second composite layer, a light emitting layer, an electron transporting layer, an electron injecting layer, and a second electrode, which are stacked over the first electrode, are included. The first composite layer and the second composite layer each include metal oxide and an organic compound. A concentration of metal oxide in the first composite layer is higher than a concentration of metal oxide in the second composite layer, whereby a light emitting element with a low driving voltage can be obtained. Further, the composite layer is not limited to a two-layer structure. A multi-layer structure can be employed. However, a concentration of metal oxide in the composite layer is gradually higher from the light emitting layer to first electrode side.

摘要翻译： 本发明的目的是提供一种具有低驱动电压的发光元件。 在发光元件中，第一电极; 并且包括层叠在第一电极上的第一复合层，第二复合层，发光层，电子传输层，电子注入层和第二电极。 第一复合层和第二复合层各自包括金属氧化物和有机化合物。 第一复合层中的金属氧化物的浓度高于第二复合层中的金属氧化物的浓度，由此可以获得具有低驱动电压的发光元件。 此外，复合层不限于两层结构。 可以采用多层结构。 然而，复合层中的金属氧化物的浓度从发光层逐渐变高到第一电极侧。

公开(公告)号：US07532173B2

公开(公告)日：2009-05-12

申请号：US10788255

申请日：2004-02-27

申请人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Aya Anzai ,  Hiromichi Godo ,  Junichiro Sakata ,  Kaoru Tsuchiya

发明人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Aya Anzai ,  Hiromichi Godo ,  Junichiro Sakata ,  Kaoru Tsuchiya

IPC分类号： G09G5/00

CPC分类号： H01L27/3267 ,  G06F1/1616 ,  G06F1/1637 ,  G06F1/1647 ,  G06F1/1677 ,  G06F1/1686 ,  G06F3/1423 ,  G06F2200/1614 ,  G09G2300/023 ,  G09G2340/0492 ,  H01L27/3209 ,  H01L27/3234 ,  H01L51/5262 ,  H01L51/5281 ,  H01L2251/5323 ,  H01L2251/558 ,  H04M1/0214 ,  H04M1/0245 ,  H04M1/72519 ,  H04M2250/16

摘要： It is an object to provide a highly functioned and highly value-added display device and mobile terminal. It is another object to provide a display device and mobile terminal characterized by including a plurality of pixels arranged in a matrix form and a first display screen over one surface of a substrate having a translucency, a second display screen over the opposite surface of the one surface of the substrate, each of the plurality of pixels having a light emitting element for emitting light toward the first display screen and the second display screen, and a first polarizer over one surface of the substrate and a second polarizer over the opposite surface of the one surface of the substrate.

摘要翻译： 本发明的目的是提供一种高功能且高附加值的显示设备和移动终端。 另一个目的是提供一种显示装置和移动终端，其特征在于包括以矩阵形式布置的多个像素，以及在具有半透明度的基板的一个表面上的第一显示屏幕，在一个相对表面上的第二显示屏幕 所述多个像素中的每一个具有用于朝向所述第一显示屏和所述第二显示屏发射光的发光元件，以及在所述基板的一个表面上的第一偏振器和位于所述第二显示屏的相对表面上的第二偏振器 衬底的一个表面。

公开(公告)号：US20070200112A1

公开(公告)日：2007-08-30

申请号：US11707414

申请日：2007-02-16

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takahiro Kawakami ,  Yoshiaki Yamamoto ,  Miki Katayama ,  Kohei Yokoyama ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takahiro Kawakami ,  Yoshiaki Yamamoto ,  Miki Katayama ,  Kohei Yokoyama ,  Yasuyuki Arai

IPC分类号： H01L29/04

CPC分类号： H01L51/5278 ,  H01L27/3244 ,  H01L27/3281 ,  H01L51/5012 ,  H01L2251/5323

摘要： It is an object of the present invention to provide a light-emitting device with high current efficiency and high display quality, in which a change in luminance with time is suppressed. The light-emitting device is provided with a plurality of light-emitting elements in each of which a plurality of light-emitting units each including at least one light-emitting layer are connected in series between a pair of electrodes. Between one of light-emitting units and the other light-emitting unit, an intermediate conductive layer is provided in the light-emitting unit. The light-emitting layer includes base material which is a compound containing an element belonging to group 2 and an element belonging to group 16 or a compound containing an element belonging to group 12 and an element belonging to group 16, and an impurity element which is an emission center. This structure makes it possible to increase light emission luminance without increasing current density.

摘要翻译： 本发明的目的是提供一种具有高电流效率和高显示质量的发光器件，其中抑制亮度随时间的变化。 发光装置设置有多个发光元件，其中每个包括至少一个发光层的多个发光单元串联连接在一对电极之间。 在一个发光单元和另一个发光单元之间，在发光单元中设置中间导电层。 发光层包括作为含有属于组2的元素和属于第16族的元素的化合物或含有属于第12族的元素和属于第16族的元素的化合物的基质材料，以及杂质元素是 排放中心。 这种结构使得可以在不增加电流密度的情况下增加发光亮度。

公开(公告)号：US20070164671A1

公开(公告)日：2007-07-19

申请号：US11687204

申请日：2007-03-16

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Junichiro Sakata ,  Yoshiharu Hirakata ,  Norihito Sone

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Junichiro Sakata ,  Yoshiharu Hirakata ,  Norihito Sone

IPC分类号： H01J1/62

CPC分类号： H01L27/3244 ,  H01L27/322 ,  H01L27/3276 ,  H01L51/5048 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/52 ,  H01L51/5206 ,  H01L51/5215 ,  H01L51/5218 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5259 ,  H01L51/56

摘要： Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.

摘要翻译： 提供了用于制造具有高内部量子效率，消耗较少功率，具有高亮度并且具有高可靠性的发光装置的技术。 这些技术包括形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成阻挡层，其中氧化硅的密度高于导电光上的导电透光氧化物层的密度 形成具有导电透光性氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热阳极上形成电致发光层，在电致发光层上形成阴极。 根据该技术，在电致发光层和导电透光性氧化物层之间形成阻挡层。