Polymer, resist composition and patterning process
    52.
    发明授权
    Polymer, resist composition and patterning process 有权
    聚合物,抗蚀剂组合物和图案化工艺

    公开(公告)号:US06703183B2

    公开(公告)日:2004-03-09

    申请号:US10241530

    申请日:2002-09-12

    IPC分类号: G03F7004

    CPC分类号: C08F220/18 G03F7/0397

    摘要: A polymer comprising recurring units of formulae (1) and (2) wherein R1 and R3 are H or methyl, R2 and R4 are C1-15 alkyl, R5 to R8 are H, or R5 and R7, and R6 and R8 form trimethylene or 1,3-cyclopentylene and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution and etching resistance and lends itself to micropatterning with electron beams or deep-UV.

    摘要翻译: 包含式(1)和(2)的重复单元的聚合物,其中R 1和R 3为H或甲基,R 2和R 4为C 1-15烷基,R 5为R 新颖的是H或R 5和R 7,并且R 6和R 8形成三亚甲基或1,3-亚环戊基并具有1,000-500,000的Mw。 包含作为基础树脂的聚合物的抗蚀剂组合物对高能量辐射敏感,具有优异的灵敏度,分辨率和耐蚀刻性,并且适用于电子束或深紫外线的微图案化。

    Resist polymer, resist composition and patterning process
    55.
    发明申请
    Resist polymer, resist composition and patterning process 有权
    抗蚀聚合物,抗蚀剂组成和图案化工艺

    公开(公告)号:US20050031989A1

    公开(公告)日:2005-02-10

    申请号:US10911676

    申请日:2004-08-05

    摘要: A polymer comprising recurring units of formulae (1), (2), (3) and (4) increases a dissolution rate in an alkali developer under the action of an acid. R1, R2, R3 and R6 are H or CH3, R4 and R5 are H or OH, X is a tertiary exo-alkyl group having a bicyclo[2.2.1]heptane framework, represented by any of formulae (X-1) to (X-4): wherein R7 is C1-C10 alkyl, and Y is a tertiary alkyl group having an adamantane structure. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized proximity bias and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.

    摘要翻译: 包含式(1),(2),(3)和(4)的重复单元的聚合物在酸的作用下增加碱显影剂中的溶解速率。 R 1,R 2,R 3和R 6是H或CH 3,R 4和R 5是H或OH,X是具有双环[ 2.2.1]庚烷骨架,由式(X-1)至(X-4)中的任一个表示:其中R 7为C 1 -C 10烷基,Y为具有金刚烷结构的叔烷基。 包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性,改进的分辨率和最小化的接近偏压,并且借助于用于VLSI制造的电子束或深UV的微图案化。

    Resist polymer, resist composition and patterning process
    56.
    发明授权
    Resist polymer, resist composition and patterning process 有权
    抗蚀聚合物,抗蚀剂组成和图案化工艺

    公开(公告)号:US07135270B2

    公开(公告)日:2006-11-14

    申请号:US10911676

    申请日:2004-08-05

    摘要: A polymer comprising recurring units of formulae (1), (2), (3) and (4) increases a dissolution rate in an alkali developer under the action of an acid. R1, R2, R3 and R6 are H or CH3, R4 and R5 are H or OH, X is a tertiary exo-alkyl group having a bicyclo[2.2.1]heptane framework, represented by any of formulae (X-1) to (X-4): wherein R7 is C1–C10 alkyl, and Y is a tertiary alkyl group having an adamantane structure. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized proximity bias and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.

    摘要翻译: 包含式(1),(2),(3)和(4)的重复单元的聚合物在酸的作用下增加碱显影剂中的溶解速率。 R 1,R 2,R 3和R 6是H或CH 3 N >,R 4和R 5是H或OH,X是具有双环[2.2.1]庚烷骨架的叔外烷基,由式 (X-1)至(X-4):其中R 7为C 1 -C 10烷基,Y为叔烷基 具有金刚烷结构的组。 包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性,改进的分辨率和最小化的接近偏压,并且借助于用于VLSI制造的电子束或深UV的微图案化。