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56 条记录 (耗时 0.051 秒)

    CMOS image sensor and method of manufacturing the same
    52.
    发明申请
    CMOS image sensor and method of manufacturing the same 审中-公开
    CMOS图像传感器及其制造方法

    公开(公告)号：US20080179643A1

    公开(公告)日：2008-07-31

    申请号：US12011382

    申请日：2008-01-24

    申请人： Atsushi Okamoto

    发明人： Atsushi Okamoto

    IPC分类号： H01L31/0216 ,  H01L31/112

    CPC分类号： H01L27/14685 ,  H01L27/14609 ,  H01L27/14643

    摘要： Spin-on-glass (SOG) or resist is coated on a passivation film formed on a photodiode region, and then a surface layer of the passivation film together with the SOG or the resist is etched back, to thereby remove irregularities of the surface of the passivation film and to optically planarize the passivation film. As a result, attenuation of light due to reflection, absorption, scattering, and interference is prevented, and a reduction in sensitivity due to variation in thickness of the passivation film is improved.

    摘要翻译： 将旋涂玻璃（SOG）或抗蚀剂涂覆在形成于光电二极管区域上的钝化膜上，然后将钝化膜的表面层与SOG或抗蚀剂一起回蚀刻，从而去除表面的凹凸 钝化膜并使钝化膜光学平坦化。 结果，防止了由反射，吸收，散射和干涉引起的光的衰减，并且提高了由于钝化膜的厚度变化引起的灵敏度的降低。

    Production of aromatic ring-containing amino compounds and catalysts
    53.
    发明申请
    Production of aromatic ring-containing amino compounds and catalysts 有权
    制备含芳环的氨基化合物和催化剂

    公开(公告)号：US20070060774A1

    公开(公告)日：2007-03-15

    申请号：US11517360

    申请日：2006-09-08

    申请人： Atsushi Okamoto ,  Toshio Watanabe

    发明人： Atsushi Okamoto ,  Toshio Watanabe

    IPC分类号： C07C209/48

    CPC分类号： C07C209/48 ,  Y02P20/582 ,  Y10S526/915 ,  C07C211/28

    摘要： An aromatic dinitrile compound is hydrogenated in an amide solvent in the presence of a solid catalyst and in the absence of ammonia to produce an aromatic ring-containing amino compound by reducing at least one cyano group to aminomethyl group. The solid catalyst is a supported palladium catalyst in which palladium is substantially present on the outer surface of carrier and in a surface layer within a depth of 200 μm from the outer surface. Using such a solid catalyst, the aromatic dinitrile compound is efficiently hydrogenated to the aromatic ring-containing amino compound under mild conditions.

    摘要翻译： 芳族二腈化合物在酰胺溶剂中，在固体催化剂存在下，在不存在氨的情况下氢化，通过将至少一个氰基还原成氨基甲基来制备含芳环的氨基化合物。 固体催化剂是负载的钯催化剂，其中钯基本上存在于载体的外表面上和表面层中，离离外表面200μm的深度。 使用这种固体催化剂，芳香族二腈化合物在温和条件下有效氢化成含芳环的氨基化合物。

    Processor and development supporting apparatus
    54.
    发明申请
    Processor and development supporting apparatus 审中-公开
    处理器和开发配套设备

    公开(公告)号：US20060107123A1

    公开(公告)日：2006-05-18

    申请号：US11246364

    申请日：2005-10-11

    申请人： Atsushi Okamoto ,  Tsutomu Mikami ,  Atsushi Ubukata

    发明人： Atsushi Okamoto ,  Tsutomu Mikami ,  Atsushi Ubukata

    IPC分类号： G06F11/00

    CPC分类号： G06F11/3476

    摘要： A processor includes a statically scheduled command removal unit which removes a statically scheduled command upon receiving a command issuing signal, a command execution condition establishing signal, and a statically scheduled execution determination signal that indicates a command for which execution is determined in advance, an encoding unit which encodes an execution history for commands, statically scheduled commands excluded, upon receiving a command execution condition establishing signal, for which a statically scheduled command is excluded, and a command issue signal, for which a statically scheduled command is excluded, all of which are obtained by the statically scheduled command removal unit, and a data packet generation unit which generates a trace packet upon receiving encoded data obtained by the encoding unit. This trace information is processed by a development supporting apparatus.

    摘要翻译： 处理器包括静态调度命令删除单元，其在接收到命令发出信号，命令执行条件建立信号以及指示预先确定了执行的命令的静态调度执行确定信号时去除静态调度命令，编码 在接收到排除了静态调度命令的命令执行条件建立信号时，排除静态执行历史的单元，排除静态调度命令，以及排除静态调度命令的命令发出信号，其中所有命令 由静态调度命令去除单元获得，数据分组生成单元，在接收到由编码单元获得的编码数据时，生成跟踪分组。 该跟踪信息由开发支持装置处理。

    Semiconductor device comprising transistor pair isolated by trench isolation
    55.
    发明申请
    Semiconductor device comprising transistor pair isolated by trench isolation 有权
    包括通过沟槽隔离隔离的晶体管对的半导体器件

    公开(公告)号：US20050189595A1

    公开(公告)日：2005-09-01

    申请号：US10920208

    申请日：2004-08-18

    申请人： Atsushi Okamoto ,  Toshiharu Takaramoto

    发明人： Atsushi Okamoto ,  Toshiharu Takaramoto

    IPC分类号： H01L21/822 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/04 ,  H01L27/08 ,  H01L27/088 ,  H01L29/788 ,  H03M1/74

    CPC分类号： H01L27/088 ,  H01L21/823481 ,  H01L27/0207 ,  H03M1/745

    摘要： A semiconductor device has transistors (P1,P10,P11) formed in an active region (22) isolated by a trench isolation region, and a predetermined circuit including a first and second transistors (P10,P11) that require symmetry or relativity characteristics, wherein the distances (S1) between a gate electrode and one end of the active region on a source side viewed from the gate electrode in the first and second transistor are substantially same, and the distances (D1) between a gate electrode and one end of the active region on a drain side viewed from the gate electrode in the first and second transistor are substantially same. The predetermined circuit includes, for example, a current mirror circuit that has a transistor pair of which gate is commonly connected, and a differential circuit that has a transistor pair whose sources are commonly connected, where an input signal is supplied to the gate, and an output signal is generated in the drain.

    摘要翻译： 半导体器件具有形成在由沟槽隔离区域隔离的有源区域（22）中的晶体管（P 1，P 10，P 11）和包括需要对称的第一和第二晶体管（P 10，P 11）的预定电路 或相对特性，其中从第一和第二晶体管中的栅电极观察源极侧的栅电极和有源区的一端之间的距离（S 1）基本相同，并且 栅极电极和从第一和第二晶体管中的栅电极观察的漏极侧的有源区的一端基本相同。 预定电路包括例如具有栅极共同连接的晶体管对的电流镜电路和具有共同连接源极的晶体管对的差分电路，其中输入信号被提供给栅极，以及 在漏极中产生输出信号。