公开(公告)号：US20050185453A1

公开(公告)日：2005-08-25

申请号：US11105054

申请日：2005-04-13

申请人： Lung Tran ,  Thomas Anthony

发明人： Lung Tran ,  Thomas Anthony

IPC分类号： G11C11/15 ,  G11C11/16 ,  G11C11/00

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： The invention includes a stacked magnetic memory structure. The magnetic memory structure includes a stacked magnetic memory structure. The first layer includes a first plurality of magnetic tunnel junctions. A second layer is formed adjacent to the first layer. The second layer includes a second plurality of magnetic tunnel junctions. The stacked magnetic memory structure further includes a common first group conductor connected to each of the first plurality of magnetic tunnel junctions and the second plurality of magnetic tunnel junctions.

摘要翻译： 本发明包括堆叠磁存储器结构。 磁存储器结构包括堆叠磁存储器结构。 第一层包括第一多个磁性隧道结。 形成与第一层相邻的第二层。 第二层包括第二多个磁性隧道结。 层叠的磁存储器结构还包括连接到第一多个磁隧道结中的每一个和第二多个磁性隧道结的公共第一组导体。

公开(公告)号：US20050101035A1

公开(公告)日：2005-05-12

申请号：US10846101

申请日：2004-11-10

申请人： Janice Nickel ,  Thomas Anthony ,  Manish Sharma ,  Manoj Bhattacharyya

发明人： Janice Nickel ,  Thomas Anthony ,  Manish Sharma ,  Manoj Bhattacharyya

IPC分类号： H01L21/00 ,  H01L43/12

CPC分类号： H01L43/12

摘要： A magneto-resistive element is constructed. A ferromagnetic sense layer is deposited on a surface. The ferromagnetic sense layer is patterned. An etch is performed in preparation for depositing a dielectric layer. The dielectric layer is deposited over the sense layer. A ferromagnetic pinned layer is deposited over the dielectric layer.

摘要翻译： 构造了一个磁阻元件。 铁磁感应层沉积在表面上。 铁磁感应层被图案化。 进行蚀刻以准备沉积介电层。 介电层沉积在感应层上。 在电介质层上沉积铁磁钉扎层。

公开(公告)号：US20050077556A1

公开(公告)日：2005-04-14

申请号：US10683326

申请日：2003-10-10

申请人： Thomas Anthony ,  Man Bhattacharyya ,  Robert Wolmsley

发明人： Thomas Anthony ,  Man Bhattacharyya ,  Robert Wolmsley

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L29/76

CPC分类号： G11C11/16 ,  G11C11/1675 ,  H01L43/08

摘要： An exemplary thermally-assisted magnetic memory structure comprises a first conductor substantially surrounded by a cladding, a memory cell being thermally isolated from the first conductor by a thermally resistive region, and a second conductor electrically contacting the memory cell.

公开(公告)号：US20050047199A1

公开(公告)日：2005-03-03

申请号：US10649076

申请日：2003-08-27

申请人： Frederick Perner ,  Kenneth Smith ,  Thomas Anthony

发明人： Frederick Perner ,  Kenneth Smith ,  Thomas Anthony

IPC分类号： G11C11/15 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C11/00

CPC分类号： G11C11/15

摘要： Method and apparatus for coupling conductors in magnetic memory. In some embodiments, the memory element comprises: a first magnetic memory element, a first group of conductors magnetically coupled to the first magnetic memory element, a second magnetic memory element, a second group of conductors magnetically coupled to the second magnetic memory element, where the second magnetic memory element is substantially vertical to the first, and the first and second group of conductors have at least one conductor in common.

公开(公告)号：US06756239B1

公开(公告)日：2004-06-29

申请号：US10414325

申请日：2003-04-15

申请人： Janice H. Nickel ,  Thomas Anthony ,  Manish Sharma ,  Manoj Bhattacharyya

发明人： Janice H. Nickel ,  Thomas Anthony ,  Manish Sharma ,  Manoj Bhattacharyya

IPC分类号： H01L2100

CPC分类号： H01L43/12

摘要： A magneto-resistive element is constructed. A ferromagnetic sense layer is deposited on a surface. The ferromagnetic sense layer is patterned. An etch is performed in preparation for depositing a dielectric layer. The dielectric layer is deposited over the sense layer. A ferromagnetic pinned layer is deposited over the dielectric layer.

摘要翻译： 构造了一个磁阻元件。 铁磁感应层沉积在表面上。 铁磁感应层被图案化。 进行蚀刻以准备沉积介电层。 介电层沉积在感应层上。 在电介质层上沉积铁磁钉扎层。