公开(公告)号：US08779513B2

公开(公告)日：2014-07-15

申请号：US13869037

申请日：2013-04-24

Applicant: United Microelectronics Corp.

Inventor： Shih-Hung Tsai ,  Chien-Ting Lin ,  Chin-Cheng Chien ,  Chin-Fu Lin ,  Chih-Chien Liu ,  Teng-Chun Tsai ,  Chun-Yuan Wu

IPC: H01L27/12 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L29/66795

Abstract: A non-planar semiconductor structure includes a substrate, at least two fin-shaped structures, at least an isolation structure, and a plurality of epitaxial layers. The fin-shaped structures are located on the substrate. The isolation structure is located between the fin-shaped structures, and the isolation structure has a nitrogen-containing layer. The epitaxial layers respectively cover a part of the fin-shaped structures and are located on the nitrogen-containing layer. A non-planar semiconductor process is also provided for forming the semiconductor structure.

Abstract translation: 非平面半导体结构包括衬底，至少两个鳍状结构，至少一个隔离结构和多个外延层。 鳍状结构位于基底上。 隔离结构位于鳍状结构之间，隔离结构具有含氮层。 外延层分别覆盖了鳍状结构的一部分并且位于含氮层上。 还提供了用于形成半导体结构的非平面半导体工艺。

公开(公告)号：US20140124904A1

公开(公告)日：2014-05-08

申请号：US13670476

申请日：2012-11-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chin-I Liao ,  Chin-Cheng Chien

IPC: H01L29/38 ,  H01L21/20

CPC classification number: H01L21/0262 ,  H01L21/0237 ,  H01L21/02576 ,  H01L21/02639 ,  H01L29/0843 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/78

Abstract: A method of forming an epitaxial layer includes the following steps. At first, a first epitaxial growth process is performed to form a first epitaxial layer on a substrate, and a gas source of silicon, a gas source of carbon, a gas source of phosphorous and a gas source of germanium are introduced during the first epitaxial growth process to form the first epitaxial layer including silicon, carbon, phosphorous and germanium. Subsequently, a second epitaxial growth process is performed to form a second epitaxial layer, and a number of elements in the second epitaxial layer is smaller than a number of elements in the first epitaxial layer.

Abstract translation: 形成外延层的方法包括以下步骤。 首先，执行第一外延生长工艺以在衬底上形成第一外延层，并且在第一外延期间引入硅气体源，碳气体源，磷气体源和锗气体源 生长工艺以形成包括硅，碳，磷和锗的第一外延层。 随后，进行第二外延生长工艺以形成第二外延层，并且第二外延层中的多个元件小于第一外延层中的元件的数量。

公开(公告)号：US20140124835A1

公开(公告)日：2014-05-08

申请号：US14156442

申请日：2014-01-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chin-I Liao ,  Chin-Cheng Chien

IPC: H01L29/78

CPC classification number: H01L29/7848 ,  H01L21/26506 ,  H01L21/28518 ,  H01L21/28525 ,  H01L29/66628 ,  H01L29/66636

Abstract: A semiconductor structure includes agate structure, an epitaxial layer and a carbon-containing silicon germanium cap layer. The gate structure is located on a substrate. The epitaxial layer is located in the substrate beside the gate structure. The carbon-containing silicon germanium cap layer is located on the epitaxial layer. Otherwise, semiconductor processes for forming said semiconductor structure are also provided.

Abstract translation: 半导体结构包括玛瑙结构，外延层和含碳硅锗覆盖层。 栅极结构位于衬底上。 外延层位于栅极结构旁边的衬底中。 含碳硅锗覆盖层位于外延层上。 否则，还提供了用于形成所述半导体结构的半导体工艺。