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64 条记录 (耗时 0.031 秒)

    Photoconductive target of the image pickup tube
    51.
    发明授权
    Photoconductive target of the image pickup tube 失效
    摄像管的感光目标

    公开(公告)号：US4608514A

    公开(公告)日：1986-08-26

    申请号：US726316

    申请日：1985-04-23

    申请人： Takao Kuwahata ,  Sohei Manabe ,  Katsuhiro Gonpei

    发明人： Takao Kuwahata ,  Sohei Manabe ,  Katsuhiro Gonpei

    IPC分类号： H01J29/45 ,  H01J31/38

    CPC分类号： H01J29/456 ,  H01J29/45

    摘要： Disclosed is a photoconductive target of an image pickup tube having a transparent substrate, a transparent conductive layer formed on the transparent substrate, a photoconductive layer formed on the transparent conductive layer and containing cadmium, tellurium and selenium as major components, and a high resistance layer formed on the photoconductive layer. The film thickness of the photoconductive layer is more than 1,000 .ANG. and less than 10,000 .ANG. and the film thickness of the high resistance layer falls within the range between 2 and 10 .mu.m.

    摘要翻译： 公开了具有透明基板的图像拾取管的光电导体，透明基板上形成的透明导电层，在透明导电层上形成的含有镉，碲和硒作为主要成分的光电导层，以及高电阻层 形成在光电导层上。 光电导层的膜厚超过1000，小于10,000，高电阻层的膜厚在2〜10μm的范围内。

    Image sensor with fixed potential output transistor
    52.
    发明授权
    Image sensor with fixed potential output transistor 有权
    具有固定电位输出晶体管的图像传感器

    公开(公告)号：US08817154B2

    公开(公告)日：2014-08-26

    申请号：US13599343

    申请日：2012-08-30

    申请人： Sohei Manabe ,  Jeong-Ho Lyu

    发明人： Sohei Manabe ,  Jeong-Ho Lyu

    IPC分类号： H04N3/14 ,  H04N5/335

    CPC分类号： H01L27/14612 ,  H01L27/14641 ,  H04N5/353 ,  H04N5/3532 ,  H04N5/3745 ,  H04N5/37452

    摘要： An image sensor pixel includes a photosensitive region and pixel circuitry. The photosensitive region accumulates an image charge in response to light incident upon the image sensor. The pixel circuitry includes a transfer-storage transistor, a charge-storage area, an output transistor, and a floating diffusion region. The transfer-storage transistor is coupled between the photosensitive region and the charge-storage area. The output transistor has a channel coupled between the charge-storage area and the floating diffusion region and has a gate tied to a fixed voltage potential. The transfer-storage transistor causes the image charge to transfer from the photosensitive region to the charge-storage area and to transfer from the charge-storage area to the floating diffusion region.

    摘要翻译： 图像传感器像素包括光敏区域和像素电路。 感光区域响应入射到图像传感器上的光积累图像电荷。 像素电路包括转移存储晶体管，电荷存储区域，输出晶体管和浮动扩散区域。 转移存储晶体管耦合在感光区域和电荷存储区域之间。 输出晶体管具有耦合在电荷存储区域和浮动扩散区域之间的沟道，并且具有连接到固定电压电位的栅极。 转移储存晶体管使得图像电荷从光敏区域转移到电荷存储区域并从电荷存储区域转移到浮动扩散区域。

    GROUND CONTACT STRUCTURE FOR A LOW DARK CURRENT CMOS PIXEL CELL
    53.
    发明申请
    GROUND CONTACT STRUCTURE FOR A LOW DARK CURRENT CMOS PIXEL CELL 有权
    低电流CMOS像素电池的接地结构

    公开(公告)号：US20140027827A1

    公开(公告)日：2014-01-30

    申请号：US13558231

    申请日：2012-07-25

    申请人： Sohei Manabe ,  Jeong-Ho Lyu

    发明人： Sohei Manabe ,  Jeong-Ho Lyu

    IPC分类号： H01L27/146 ,  H01L31/18

    CPC分类号： H01L27/14614 ,  H01L27/14607 ,  H01L27/14616 ,  H01L27/14689

    摘要： Pixel array structures to provide a ground contact for a CMOS pixel cell. In an embodiment, an active area of a pixel cell includes a photodiode disposed in a first portion of an active area, where a second portion of the active area extends from a side of the first portion. The second portion includes a doped region to provide a ground contact for the active area. In another embodiment, the pixel cell includes a transistor to transfer the charge from the photodiode, where a gate of the transistor is adjacent to the second portion and overlaps the side of the first portion.

    摘要翻译： 像素阵列结构为CMOS像素单元提供接地触点。 在一个实施例中，像素单元的有源区域包括设置在有源区域的第一部分中的光电二极管，其中有源区域的第二部分从第一部分的一侧延伸。 第二部分包括用于为有源区域提供接地触点的掺杂区域。 在另一个实施例中，像素单元包括用于从光电二极管转移电荷的晶体管，其中晶体管的栅极与第二部分相邻并与第一部分的一侧重叠。

    ENHANCED PIXEL CELL ARCHITECTURE FOR AN IMAGE SENSOR
    54.
    发明申请
    ENHANCED PIXEL CELL ARCHITECTURE FOR AN IMAGE SENSOR 有权
    用于图像传感器的增强像素单元架构

    公开(公告)号：US20130221194A1

    公开(公告)日：2013-08-29

    申请号：US13406383

    申请日：2012-02-27

    申请人： Sohei Manabe

    发明人： Sohei Manabe

    IPC分类号： H01L27/148

    CPC分类号： H01L27/14612 ,  H01L27/1464 ,  H04N5/3741

    摘要： A backside illuminated pixel array having a buried channel source follower of a pixel cell which is coupled to output an analog signal directly to a bitline as image data. In one embodiment, the buried channel source follower of a pixel cell is coupled to a source follower power line having a line impedance which is less than that of one or more other signal lines for operating that same pixel cell. In another embodiment, a source follower power line has a line impedance which is less than at least one of a line impedance of a transfer signal line or a line impedance of a reset signal line.

    摘要翻译： 背面照明像素阵列，其具有像素单元的掩埋通道源极跟随器，其被耦合以将模拟信号直接输出到位线作为图像数据。 在一个实施例中，像素单元的掩埋沟道源极跟随器耦合到源极跟随器电源线，线路阻抗小于用于操作该相同像素单元的一个或多个其它信号线的线路阻抗。 在另一个实施例中，源极跟随器电源线具有小于传输信号线的线路阻抗或复位信号线的线路阻抗中的至少一个的线路阻抗。

    Image Sensor With Reduced Noise By Blocking Nitridation Using Photoresist
    55.
    发明申请
    Image Sensor With Reduced Noise By Blocking Nitridation Using Photoresist 有权
    使用光刻胶阻挡氮化，降低噪音的图像传感器

    公开(公告)号：US20130056800A1

    公开(公告)日：2013-03-07

    申请号：US13227400

    申请日：2011-09-07

    申请人： Jeong-Ho Lyu ,  Sohei Manabe ,  Howard Rhodes

    发明人： Jeong-Ho Lyu ,  Sohei Manabe ,  Howard Rhodes

    IPC分类号： H01L27/148 ,  H01L31/18

    CPC分类号： H01L27/14601 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14683

    摘要： An image sensor is described in which the imaging pixels have reduced noise by blocking nitridation in selected areas. In one example, a method includes forming a first and second gate oxide layer over a substrate, forming a layer of photoresist over the first gate oxide layer, applying nitridation to the photoresist and the second gate oxide layer such that the first gate oxide layer is protected from the nitridation by the photoresist, and forming a polysilicon gate over the first and second gate oxide layers.

    摘要翻译： 描述了一种图像传感器，其中成像像素通过在选定的区域中阻挡氮化而具有降低的噪声。 在一个示例中，一种方法包括在衬底上形成第一和第二栅极氧化物层，在第一栅极氧化物层上形成光致抗蚀剂层，向光致抗蚀剂和第二栅极氧化物层施加氮化，使得第一栅极氧化物层为 防止光致抗蚀剂的氮化，并在第一和第二栅极氧化物层上形成多晶硅栅极。

    IMAGE SENSOR HAVING SUPPLEMENTAL CAPACITIVE COUPLING NODE
    57.
    发明申请
    IMAGE SENSOR HAVING SUPPLEMENTAL CAPACITIVE COUPLING NODE 有权
    具有补充电容耦合节点的图像传感器

    公开(公告)号：US20130009043A1

    公开(公告)日：2013-01-10

    申请号：US13619879

    申请日：2012-09-14

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes ,  Sohei Manabe

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes ,  Sohei Manabe

    IPC分类号： H01L31/113 ,  H01L27/148

    CPC分类号： H04N5/35509 ,  H04N5/3559 ,  H04N5/3597 ,  H04N5/37452 ,  H04N5/376

    摘要： An image sensor includes a pixel array, a bit line, a supplemental capacitance node line, and a control circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells different from the first group. The control circuit is coupled to the supplemental capacitance node line to selectively increase the potential at the FD node of each of the pixel cells of the second group by selectively asserting a FD boost signal on the supplemental capacitance node line.

    摘要翻译： 图像传感器包括像素阵列，位线，补充电容节点线和控制电路。 像素阵列包括多个像素单元，每个像素单元包括浮动扩散（FD）节点和耦合以选择性地将图像电荷传送到FD节点的感光元件。 位线被耦合以选择性地进行从第一组像素单元输出的图像数据。 辅助电容节点线耦合到与第一组不同的第二组像素单元的FD节点。 控制电路通过选择性地在辅助电容节点线上确定FD升压信号来耦合到辅助电容节点线，以选择性地增加第二组的每个像素单元的FD节点的电位。

    IMAGE SENSOR HAVING SUPPLEMENTAL CAPACITIVE COUPLING NODE
    58.
    发明申请
    IMAGE SENSOR HAVING SUPPLEMENTAL CAPACITIVE COUPLING NODE 有权
    具有补充电容耦合节点的图像传感器

    公开(公告)号：US20120153123A1

    公开(公告)日：2012-06-21

    申请号：US12972188

    申请日：2010-12-17

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes ,  Sohei Manabe

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes ,  Sohei Manabe

    IPC分类号： H01L27/146

    CPC分类号： H04N5/35509 ,  H04N5/3559 ,  H04N5/3597 ,  H04N5/37452 ,  H04N5/376

    摘要： An image sensor includes a pixel array, a bit line, supplemental capacitance node line, and a supplemental capacitance circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells to selectively couple a supplemental capacitance to the FD nodes of the second group in response to a control signal. In various embodiments, the first and second group of pixel cells may be the same group or a different group of the pixel cells and may add a capacitive boost feature or a multi conversion gain feature.

    摘要翻译： 图像传感器包括像素阵列，位线，补充电容节点线和补充电容电路。 像素阵列包括多个像素单元，每个像素单元包括浮动扩散（“FD”）节点和耦合以选择性地将图像电荷传送到FD节点的感光元件。 位线被耦合以选择性地进行从第一组像素单元输出的图像数据。 辅助电容节点线耦合到第二组像素单元的FD节点，以响应于控制信号选择性地将辅助电容耦合到第二组的FD节点。 在各种实施例中，第一和第二组像素单元可以是相同的组或像素单元的不同组，并且可以添加电容性升压特征或多转换增益特征。