摘要:
A monolithic multi-functional integrated sensor and method for making the monolithic multi-functional integrated sensor. The monolithic multi-functional integrated sensor includes: a pressure sensor including a plurality of piezoresistors having resistance values which vary with a change in external pressure, the piezoresistors being disposed in a direction so as to be subject to a piezoresistive effect produced by the external pressure at or beyond a predetermined first level; and a temperature sensor including a resistor having a resistance value which varies with a change in temperature, the resistor being disposed in a direction so as to be subject to a piezoresistive effect produced by the external pressure below a predetermined second level.
摘要:
Disclosed is a resonator for wireless power transmission used in a mobile device. The resonator includes a substrate, at least one microstrip line, and a magnetic core. The microstrip line is formed on the substrate and is provided at one side thereof with a slit to have an open-loop shape. The magnetic core is formed on the substrate and is disposed on a space defined by the microstrip line to increase coupling strength.
摘要:
Disclosed are a temperature measurement apparatus and method for measuring temperature by using RF signals having different frequencies. The temperature measurement apparatus includes a parameter generation unit for generating a first parameter based on a radio frequency (RF) signal having a first frequency and a second parameter based on an RF signal having a second frequency; a parameter detection unit for detecting the generated first and second parameters; and a control unit for calculating a temperature value based on the detected first and second parameters. Accordingly, the temperature measurement apparatus can measure temperature by use of existing components and received RF signals without any addition of a temperature sensor, as well as measure temperature precisely without having any influence on the intensities of RF signals that can vary due to the changes of transmission distances and signal-receiving environments.
摘要:
Apparatuses and methods for processing a bandwidth request in a multihop relay Broadband Wireless Access (BWA) communication system are provided. A communication method of a Relay Station (RS) includes determining a number of bandwidth request ranging codes received from Subscriber Stations (SSs); and reporting the number of the bandwidth request ranging codes to a Base Station (BS). A communication method of the BS includes allocating a resource to an RS to report on a number of detected bandwidth request ranging codes; and receiving a report on the number of the bandwidth request ranging codes using the allocated resource.
摘要:
A capacitive type temperature sensor includes a first electrode layer, a second electrode layer, a dielectric layer positioned between the first and second electrode layers and having a dielectric of which a volume is changed in response to a temperature change, and a temperature calculation unit calculating a temperature corresponding to an electric potential difference between the first and second electrode layers. Accordingly, the capacitive type temperature sensor has a good sensitivity of measuring the temperature and a good accuracy, does not consume a large amount of power, and allows a process of fabricating the same to be simplified.
摘要:
An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.
摘要:
An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.
摘要:
An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.
摘要:
Provided is a method of fabricating a semiconductor device including a dual suicide process. The method may include sequentially siliciding and stressing a first MOS region, and sequentially siliciding and stressing a second MOS region after siliciding and stressing the first MOS region, the second MOS region being a different type than the first MOS region.
摘要:
Disclosed are a temperature measurement apparatus and method for measuring temperature by using RF signals having different frequencies. The temperature measurement apparatus includes a parameter generation unit for generating a first parameter based on a radio frequency (RF) signal having a first frequency and a second parameter based on an RF signal having a second frequency; a parameter detection unit for detecting the generated first and second parameters; and a control unit for calculating a temperature value based on the detected first and second parameters. Accordingly, the temperature measurement apparatus can measure temperature by use of existing components and received RF signals without any addition of a temperature sensor, as well as measure temperature precisely without having any influence on the intensities of RF signals that can vary due to the changes of transmission distances and signal-receiving environments.