摘要:
A variable frequency amplifier includes a main amplifier system 4 for amplifying one of signals into which an input signal is split by a directional coupler 3 to output the amplified signal, and an injection amplifier system 9 for adjusting at least one of the amplitude and phase of the other one of the signals into which the input signal is split by the directional coupler 3 according to a setting provided thereto from outside the variable frequency amplifier, and for amplifying the other signal and injecting this amplified signal into an output side of the main amplifier system 4.
摘要:
According to one embodiment, an information processing apparatus includes a processor, a non-volatile storage unit, a receiving unit, a judging unit, and a transmitting unit. The receiving unit receives from the processor an inquiry about accessibility of the storage unit. The judging unit judges, upon receipt of the inquiry, whether the storage unit is accessible on the basis of a start-up time period between starting power supply to the storage unit and activation of the storage unit. The transmitting unit transmits a judgment result obtained by the judging unit to the processor.
摘要:
According to one embodiment, a memory chip, which is connected to a writing device that writes data and to a reading device that reads data, includes: a memory including a first area that is a predetermined data storage area; a second encryption key generating unit that receives second key information stored in the reading device and generates a third key; and a sending unit that transmits, to the reading device, second encrypted data obtained by encrypting data stored in the memory using the third key. The second encrypted data is received by the reading device and is decrypted by using a fourth key that is stored in the reading device and that corresponds to the third key.
摘要:
Provided is a power amplification device including: a DC power supply that outputs a drain voltage; a Doherty amplifier including a carrier amplifier and a peak amplifier, which are connected in parallel, and amplifies an RF signal; a voltage control circuit that outputs a first instruction to output a low voltage when an output power is equal to or lower than a given value, and outputs a second instruction to output a high voltage when the output power is larger than the given value; and a voltage converter circuit that converts the drain voltage to a voltage lower than the drain voltage and applies the converted voltage to drain terminals of the carrier amplifier and the peak amplifier according to the first instruction, and applies the drain voltage directly to the drain terminals of the carrier amplifier and the peak amplifier according to the second instruction.
摘要:
A memory cell module comprises a memory cell array formed by memory cells of M columns×N rows. Each memory cell includes a magnetoresistive element or a magnetresistive element with a semiconductor element. A memory module comprises a first access means to access the memory cell array by a column direction and a second access means to access the memory cell array by a row direction. In this manner data is read from a magnetoresistive memory module in both row and column directions.