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    SINGLE-CRYSTAL ORGANIC SEMICONDUCTOR MATERIALS AND APPROACHES THEREFOR
    51.
    发明申请
    SINGLE-CRYSTAL ORGANIC SEMICONDUCTOR MATERIALS AND APPROACHES THEREFOR 审中-公开
    单晶有机半导体材料及其应用

    公开(公告)号：US20080134961A1

    公开(公告)日：2008-06-12

    申请号：US11932057

    申请日：2007-10-31

    申请人： Zhenan Bao ,  Alejandro L. Briseno ,  Colin C. Reese ,  Stefan C. B. Mannsfeld ,  Shuhong Liu ,  Mang-Mang Ling

    发明人： Zhenan Bao ,  Alejandro L. Briseno ,  Colin C. Reese ,  Stefan C. B. Mannsfeld ,  Shuhong Liu ,  Mang-Mang Ling

    IPC分类号： C30B23/00 ,  H01L51/00

    CPC分类号： C30B23/005 ,  B82Y10/00 ,  C30B23/002 ,  C30B29/54 ,  H01L51/0012 ,  H01L51/0046 ,  H01L51/052

    摘要： Patterned single crystals and related devices are facilitated. According to an example embodiment of the present invention, organic semiconducting single-crystals are manufactured using a plurality of surface regions on a substrate. The diffusivity and/or the rate of desorption is controlled at each surface region and at the substrate to grow at least one organic semiconducting single crystal at each surface region from a vapor-phase organic material. This control is effected, for example, before and/or during the introduction of vapor-phase organic material to the surface regions. In some embodiments, the surface regions include an organic film such as octadecyltriethoxysilane (OTS), and in other embodiments, the surface regions include carbon nanotube bundles, either of which can be implemented to exhibit a surface roughness and/or other characteristics that facilitate selective crystal nucleation.

    摘要翻译： 图形化的单晶和相关器件便利。 根据本发明的示例性实施例，使用在基板上的多个表面区域来制造有机半导体单晶。 在每个表面区域和底物处控制扩散率和/或解吸速率，以在气相有机材料的每个表面区域生长至少一个有机半导体单晶。 该控制例如在将气相有机材料引入表面区域之前和/或期间进行。 在一些实施方案中，表面区域包括诸如十八烷基三乙氧基硅烷（OTS）的有机膜，并且在其它实施方案中，表面区域包括碳纳米管束，其中任一种可以被实现为表现出表面粗糙度和/或促进选择性的其他特性 晶体成核。

    P-type OFET with fluorinated channels
    53.
    发明授权
    P-type OFET with fluorinated channels 有权
    带有氟化通道的P型OFET

    公开(公告)号：US07160754B2

    公开(公告)日：2007-01-09

    申请号：US11337897

    申请日：2006-01-23

    申请人： Zhenan Bao ,  Evert-Jan Borkent

    发明人： Zhenan Bao ,  Evert-Jan Borkent

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0508 ,  H01L51/0036

    摘要： The present invention provides an organic field-effect transistor (OFET) and a method of fabricating the OFET. The OFET, configured to function as a p-type semiconductor, includes a substrate having a top surface and a semiconductor layer located over the top surface. The semiconductor layer comprises organic semiconductor molecules. Each of the organic semiconductor molecules includes a core having conjugated pi bonds, a fluorinated alkyl group, and an alkyl spacer group having a chain of two or more carbon atoms. One end of the chain is bonded to the fluorinated alkyl group and another end of the chain is bonded to the core. Substituents coupled to the carbon atoms have an electronegativity of less than about 4.

    摘要翻译： 本发明提供有机场效应晶体管（OFET）和制造OFET的方法。 被配置为用作p型半导体的OFET包括具有顶表面和位于顶表面上方的半导体层的衬底。 半导体层包括有机半导体分子。 每个有机半导体分子包括具有共轭π键的核，氟化烷基和具有两个或更多个碳原子的链的烷基间隔基。 链的一端与氟化烷基结合，链的另一端与核结合。 与碳原子偶联的取代基具有小于约4的电负性。

    ELECTRICAL DETECTION OF SELECTED SPECIES
    54.
    发明申请
    ELECTRICAL DETECTION OF SELECTED SPECIES 有权
    电子检测选择的物种

    公开(公告)号：US20060243969A1

    公开(公告)日：2006-11-02

    申请号：US11421125

    申请日：2006-05-31

    申请人： Zhenan Bao ,  Bernard Yurke

    发明人： Zhenan Bao ,  Bernard Yurke

    IPC分类号： H01L29/08

    CPC分类号： G01N27/4145

    摘要： The present invention provides an organic field effect transistor and a method of fabricating the transistor. The transistor includes a semiconductive film comprising organic molecules. Probe molecules capable of binding to target molecules are coupled to an outer surface of the semiconductive film such that the interior of the film being substantially free of the probe molecules.

    摘要翻译： 本发明提供一种有机场效应晶体管及其制造方法。 晶体管包括包含有机分子的半导体膜。 能够结合靶分子的探针分子被偶联到半导体膜的外表面，使得膜的内部基本上不含探针分子。

    OFET structures with both n- and p-type channels
    55.
    发明申请
    OFET structures with both n- and p-type channels 有权

    公开(公告)号：US20060138406A1

    公开(公告)日：2006-06-29

    申请号：US11330472

    申请日：2006-01-12

    申请人： Zhenan Bao ,  Evert-Jan Borkent ,  Dawen Li

    发明人： Zhenan Bao ,  Evert-Jan Borkent ,  Dawen Li

    IPC分类号： H01L29/08

    CPC分类号： H01L51/0541 ,  H01L51/0036 ,  H01L51/0078 ,  H01L51/0545

    摘要： The present invention provides a dual organic field-effect transistor (OFET) structure and a method of fabricating the structure. The dual OFET structure includes an n-type organic semiconductor layer and a p-type organic semiconductor layer in contact with each other along an interface and forming a stack. The dual OFET structure also includes a source electrode and a drain electrode, the source and drain electrodes being in contact with one of the organic semiconductor layers. The dual OFET structure further includes first and second gate structures located on opposite sides of the stack. The first gate structure is configured to control a channel region of the n-type organic semiconductor layer, and the second gate structure is configured to control a channel region of the p-type organic semiconductor layer.

    P-type OFET with fluorinated channels
    56.
    发明申请
    P-type OFET with fluorinated channels 有权

    公开(公告)号：US20060134824A1

    公开(公告)日：2006-06-22

    申请号：US11337897

    申请日：2006-01-23

    申请人： Zhenan Bao ,  Evert-Jan Borkent

    发明人： Zhenan Bao ,  Evert-Jan Borkent

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0508 ,  H01L51/0036

    摘要： The present invention provides an organic field-effect transistor (OFET) and a method of fabricating the OFET. The OFET, configured to function as a p-type semiconductor, includes a substrate having a top surface and a semiconductor layer located over the top surface. The semiconductor layer comprises organic semiconductor molecules. Each of the organic semiconductor molecules includes a core having conjugated pi bonds, a fluorinated alkyl group, and an alkyl spacer group having a chain of two or more carbon atoms. One end of the chain is bonded to the fluorinated alkyl group and another end of the chain is bonded to the core. Substituents coupled to the carbon atoms have an electronegativity of less than about 4.

    P-type OFET with fluorinated channels
    57.
    发明授权
    P-type OFET with fluorinated channels 有权
    带有氟化通道的P型OFET

    公开(公告)号：US07057205B2

    公开(公告)日：2006-06-06

    申请号：US10802973

    申请日：2004-03-17

    申请人： Zhenan Bao ,  Evert-Jan Borkent

    发明人： Zhenan Bao ,  Evert-Jan Borkent

    IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

    CPC分类号： H01L51/0508 ,  H01L51/0036

    摘要： The present invention provides an organic field-effect transistor (OFET) and a method of fabricating the OFET. The OFET, configured to function as a p-type semiconductor, includes a substrate having a top surface and a semiconductor layer located over the top surface. The semiconductor layer comprises organic semiconductor molecules. Each of the organic semiconductor molecules includes a core having conjugated pi bonds, a fluorinated alkyl group, and an alkyl spacer group having a chain of two or more carbon atoms. One end of the chain is bonded to the fluorinated alkyl group and another end of the chain is bonded to the core. Substituents coupled to the carbon atoms have an electronegativity of less than about 4.

    摘要翻译： 本发明提供有机场效应晶体管（OFET）和制造OFET的方法。 被配置为用作p型半导体的OFET包括具有顶表面和位于顶表面上方的半导体层的衬底。 半导体层包括有机半导体分子。 每个有机半导体分子包括具有共轭π键的核，氟化烷基和具有两个或更多个碳原子的链的烷基间隔基。 链的一端与氟化烷基结合，链的另一端与核结合。 与碳原子偶联的取代基具有小于约4的电负性。

    OFET structures with both n- and p-type channels
    58.
    发明授权
    OFET structures with both n- and p-type channels 有权
    OFET结构具有n型和p型通道

    公开(公告)号：US07045814B2

    公开(公告)日：2006-05-16

    申请号：US10875478

    申请日：2004-06-24

    申请人： Zhenan Bao ,  Evert-Jan Borkent ,  Dawen Li

    发明人： Zhenan Bao ,  Evert-Jan Borkent ,  Dawen Li

    IPC分类号： H01L51/10

    CPC分类号： H01L51/0541 ,  H01L51/0036 ,  H01L51/0078 ,  H01L51/0545

    摘要： The present invention provides a dual organic field-effect transistor (OFET) structure and a method of fabricating the structure. The dual OFET structure includes an n-type organic semiconductor layer and a p-type organic semiconductor layer in contact with each other along an interface and forming a stack. The dual OFET structure also includes a source electrode and a drain electrode, the source and drain electrodes being in contact with one of the organic semiconductor layers. The dual OFET structure further includes first and second gate structures located on opposite sides of the stack. The first gate structure is configured to control a channel region of the n-type organic semiconductor layer, and the second gate structure is configured to control a channel region of the p-type organic semiconductor layer.

    摘要翻译： 本发明提供一种双有机场效应晶体管（OFET）结构及其制造方法。 双重OFET结构包括沿着界面彼此接触并形成叠层的n型有机半导体层和p型有机半导体层。 双重OFET结构还包括源电极和漏电极，源极和漏极与有机半导体层中的一个接触。 双重OFET结构还包括位于堆叠的相对侧上的第一和第二栅极结构。 第一栅极结构被配置为控制n型有机半导体层的沟道区，并且第二栅极结构被配置为控制p型有机半导体层的沟道区。

    P-type OFET with fluorinated channels
    59.
    发明申请
    P-type OFET with fluorinated channels 有权
    带有氟化通道的P型OFET

    公开(公告)号：US20050205861A1

    公开(公告)日：2005-09-22

    申请号：US10802973

    申请日：2004-03-17

    申请人： Zhenan Bao ,  Evert-Jan Borkent

    发明人： Zhenan Bao ,  Evert-Jan Borkent

    IPC分类号： H01L51/05 ,  H01L21/335 ,  H01L29/786 ,  H01L35/24 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40

    CPC分类号： H01L51/0508 ,  H01L51/0036

    摘要： The present invention provides an organic field-effect transistor (OFET) and a method of fabricating the OFET. The OFET, configured to function as a p-type semiconductor, includes a substrate having a top surface and a semiconductor layer located over the top surface. The semiconductor layer comprises organic semiconductor molecules. Each of the organic semiconductor molecules includes a core having conjugated pi bonds, a fluorinated alkyl group, and an alkyl spacer group having a chain of two or more carbon atoms. One end of the chain is bonded to the fluorinated alkyl group and another end of the chain is bonded to the core. Substituents coupled to the carbon atoms have an electronegativity of less than about 4.

    摘要翻译： 本发明提供有机场效应晶体管（OFET）和制造OFET的方法。 被配置为用作p型半导体的OFET包括具有顶表面和位于顶表面上方的半导体层的衬底。 半导体层包括有机半导体分子。 每个有机半导体分子包括具有共轭π键的核，氟化烷基和具有两个或更多个碳原子的链的烷基间隔基。 链的一端与氟化烷基结合，链的另一端与核结合。 与碳原子偶联的取代基具有小于约4的电负性。

    Process for fabricating polarized organic photonics devices, and resultant articles
    60.
    发明授权
    Process for fabricating polarized organic photonics devices, and resultant articles 有权
    制造极化有机光子器件的方法，以及所得物品

    公开(公告)号：US06489044B1

    公开(公告)日：2002-12-03

    申请号：US09394524

    申请日：1999-09-10

    申请人： Xiaochun Linda Chen ,  Zhenan Bao

    发明人： Xiaochun Linda Chen ,  Zhenan Bao

    IPC分类号： H05B3314

    CPC分类号： H01L51/5293 ,  H01L51/0003 ,  H01L51/0038 ,  H01L51/0053 ,  H01L51/0059 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S117/919

    摘要： A polarized organic photonics device, including an LED or photovoltaic device, is comprised of a first conductive layer or electrode coated with a friction transferred alignment material, a photoactive material, and a second electrically conductive layer or electrode. The alignment material provides for the orientation of the subsequently deposited photoactive material such that the photoactive material interacts with or emits light preferentially along a selected polarization axis. Additional layers and sublayers optimize and tune the optical and electronic responses of the device.

    摘要翻译： 包括LED或光伏器件的偏振有机光子学器件由涂覆有摩擦转移对准材料，光活性材料和第二导电层或电极的第一导电层或电极组成。 对准材料提供随后沉积的光活性材料的取向，使得光活性材料优选沿所选偏振轴相互作用或发射光。 附加层和子层优化和调整设备的光学和电子响应。