公开(公告)号：US20030181139A1

公开(公告)日：2003-09-25

申请号：US10358107

申请日：2003-02-04

Inventor： Kurt Lehman ,  Charles Chen ,  Ronald L. Allen ,  Robert Shinagawa ,  Anantha Sethuraman ,  Christopher F. Bevin ,  Thanassis Trikas ,  Haiguang Chen ,  Ching Ling Meng

IPC: B24B049/00 ,  B24B051/00

CPC classification number: B24B37/013 ,  B24B37/042 ,  B24B41/04 ,  B24B49/04 ,  B24B49/10 ,  B24B49/12

Abstract: Windows configurable to be coupled to a process tool or to be disposed within an opening in a polishing pad are provided. One window includes a first portion and a second portion. The first portion includes a first material, and the second portion includes a second material different than the first. Another window includes a substantially transparent gel. In some instances, the gel includes a triblock copolymer and a plasticizing oil. An additional window includes an upper window, a housing, and a diaphragm. The housing may allow a fluid to flow into and out of a space between the housing and the diaphragm. In another embodiment, a window includes a layer of material coupled to lateral surfaces of the window. In some cases, the window may be disposed within an opening in a polishing pad, and movement of the window within the polishing pad may compress the layer of material.

Abstract translation: 提供了可配置为耦合到处理工具或设置在抛光垫的开口内的窗口。 一个窗口包括第一部分和第二部分。 第一部分包括第一材料，第二部分包括不同于第一材料的第二材料。 另一窗口包括基本上透明的凝胶。 在一些情况下，凝胶包括三嵌段共聚物和增塑油。 附加的窗口包括上窗，外壳和隔膜。 壳体可以允许流体流入和流出壳体和隔膜之间的空间。 在另一个实施例中，窗口包括耦合到窗口的侧表面的材料层。 在一些情况下，窗口可以设置在抛光垫的开口内，并且窗口在抛光垫内的运动可以压缩材料层。

公开(公告)号：US20030171070A1

公开(公告)日：2003-09-11

申请号：US10391095

申请日：2003-03-18

Applicant: Applied Materials, a Delaware corporation

Inventor： Robert D. Tolles

IPC: B24B049/00 ,  B24B051/00

CPC classification number: B24B37/205 ,  B24B37/013 ,  B24B49/12 ,  Y10S451/921

Abstract: The polishing pad for a chemical mechanical polishing apparatus and method of making the same has a polishing pad with a bottom layer, a polishing surface on a top layer and a transparent sheet of material interposed between the two layers. Slurry from the chemical mechanical polishing process is prevented from penetrating the impermeable transparent sheet to the bottom layer of the polishing pad.

公开(公告)号：US20030148706A1

公开(公告)日：2003-08-07

申请号：US10124507

申请日：2002-04-16

Applicant: Applied Materials, Inc.

Inventor： Manoocher Birang ,  Boguslaw A. Swedek ,  Hyeong Cheol Kim

IPC: B24B049/00 ,  B24B051/00

CPC classification number: B24B49/10 ,  B24B37/013 ,  B24B37/205 ,  B24B49/105 ,  B24B49/12

Abstract: A polishing system can have a rotatable platen, a polishing pad secured to the platen, a carrier head to hold a substrate against the polishing pad, and an eddy current monitoring system including a coil or ferromagnetic body that extends at least partially through the polishing pad. A polishing pad can have a polishing layer and a coil or ferromagnetic body secured to the polishing layer. Recesses can be formed in a transparent window in the polishing pad.

公开(公告)号：US20030143924A1

公开(公告)日：2003-07-31

申请号：US10050314

申请日：2002-01-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kei-Wei Chen ,  Ting-Chun Wang ,  Shih-Tzung Chang ,  Yu-Ku Lin ,  Ying-Lang Wang ,  Ming-Wen Chen ,  Kuo-Hsiu Wei

IPC: B24B049/00 ,  B24B051/00 ,  B24B001/00

CPC classification number: B24B37/04 ,  B24B57/02

Abstract: A method and system is disclosed for reducing slurry usage in a chemical mechanical polishing operation utilizing at least one polishing pad thereof. Slurry can be intermittently supplied to a chemical mechanical polishing device. The slurry is generally flushed so that a portion of said slurry is trapped in a plurality of pores of at least one polishing pad associated with said chemical mechanical polishing device, wherein only a minimum amount of said slurry necessary is utilized to perform said chemical mechanical polishing operation, thereby reducing slurry usage and maintaining a consistent level of slurry removal rate performance and a decrease in particle defects thereof. The present invention thus discloses a method and system for intermittently delivering slurry to a chemical mechanical polishing device in a manner that significantly conserves slurry usage.

Abstract translation: 公开了一种利用其至少一个抛光垫在化学机械抛光操作中减少浆料使用的方法和系统。 浆料可以间歇地供应到化学机械抛光装置。 通常将浆料冲洗成使得所述浆料的一部分被捕获在与所述化学机械抛光装置相关联的至少一个抛光垫的多个孔中，其中仅使用最少量的所需浆料来进行所述化学机械抛光 操作，从而减少浆料的使用并保持一致的浆料去除速率性能水平和其颗粒缺陷的减少。 因此，本发明公开了一种用于以显着节省浆料使用的方式间歇地将浆料输送到化学机械抛光装置的方法和系统。

公开(公告)号：US20030114077A1

公开(公告)日：2003-06-19

申请号：US10145717

申请日：2002-05-16

Inventor： Ming-Cheng Yang ,  Jiun-Fang Wang

IPC: B24B049/00 ,  B24B051/00 ,  B24B001/00

CPC classification number: B24B37/32 ,  B24B49/10 ,  B24B49/14 ,  H01L21/67248

Abstract: A chemical mechanical polishing (CMP) apparatus with temperature control. The apparatus controls circular zone temperature of the wafer. The CMP apparatus comprises a platen; a carrier holding a wafer against the platen; a guide ring disposed at the rim of the carrier to mount the wafer on the carrier; and a heater disposed in the guide ring, in the carrier, or used to heat the slurry. The temperature of the heater is set between 20null C. and 60null C. Thus, the polishing rate at the edge is improved, and the polishing difference between the edge and the center of the wafer is reduced.

Abstract translation: 具有温度控制的化学机械抛光（CMP）设备。 该装置控制晶片的圆形区域温度。 CMP装置包括压板; 保持晶片抵靠压板的载体; 引导环，其设置在所述载体的边缘处以将所述晶片安装在所述载体上; 以及设置在所述导向环中的载体中的加热器或用于加热所述浆料的加热器。 加热器的温度设定在20℃至60℃之间。因此，边缘处的抛光速率得到改善，并且晶片边缘与中心之间的抛光差异减小。

公开(公告)号：US20030100242A1

公开(公告)日：2003-05-29

申请号：US09997577

申请日：2001-11-29

Inventor： Ravindra Annigeri ,  Warren A. Nelson

IPC: B24B049/00 ,  B24B051/00 ,  B24B001/00

CPC classification number: F01D5/005 ,  B23P6/007 ,  B24B1/00 ,  B24B19/14 ,  B24B49/10 ,  B24B49/12 ,  F01D5/288 ,  F05D2230/10 ,  Y10T29/49726 ,  Y10T29/4973

Abstract: A method of removing the damaged surface layer beneath a coating on a component. The method includes evaluating the component to assess the depth of the damaged substrate layer, followed by sensing a plurality of points over the outer surface of the component to determine a three-dimensional outer surface profile thereof. A three-dimensional grinding profile beneath the outer surface profile is then established based on the depth of the damaged substrate layer beneath the outer surface profile. The component is then ground along the grinding profile such that the damaged substrate layer is substantially removed without significantly removing an undamaged region of the substrate beneath the damaged substrate layer.

Abstract translation: 去除部件上涂层下方受损表面层的方法。 该方法包括评估部件以评估损坏的基底层的深度，随后感测部件的外表面上的多个点以确定其三维外表面轮廓。 然后基于外表面轮廓下的受损基底层的深度建立在外表面轮廓下方的三维研磨轮廓。 然后将该部件沿着研磨轮廓研磨，使得基本上除去受损的基底层，而不显着地除去损坏的基底层下面的基底的未损坏区域。

公开(公告)号：US20030045208A1

公开(公告)日：2003-03-06

申请号：US10230778

申请日：2002-08-29

Inventor： Jason M. Neidrich ,  Brian E. Zinn

IPC: B24B049/00 ,  B24B051/00 ,  B24B001/00

CPC classification number: B24B37/26 ,  B24B27/0076 ,  B24B37/013 ,  B24B49/04

Abstract: A chemical mechanical polishing includes a first spindle operable to rotate with respect to a central axis of the first spindle. A first polishing pad is coupled with the first spindle, and the first polishing pad has a first surface extending along a plane generally perpendicular to the central axis of the first spindle. A wafer carrier is included that is adapted to receive a wafer with a second surface generally parallel to the first surface of the first polishing pad. The wafer carrier is operable to rotate with respect to a central axis of the wafer carrier. The first surface of the first polishing pad is moveable along the central axis of the first spindle from a first position, wherein the first surface is spaced from the second surface, and a second position, wherein the first surface generally contacts the second surface.

Abstract translation: 化学机械抛光包括可操作以相对于第一主轴的中心轴线旋转的第一主轴。 第一抛光垫与第一主轴联接，并且第一抛光垫具有沿着大致垂直于第一主轴的中心轴线的平面延伸的第一表面。 包括适于接收具有大致平行于第一抛光垫的第一表面的第二表面的晶片的晶片载体。 晶片载体可操作以相对于晶片载体的中心轴线旋转。 第一抛光垫的第一表面可从第一位置的第一主轴的中心轴线移动，其中第一表面与第二表面间隔开，第二位置，其中第一表面大体接触第二表面。

公开(公告)号：US20030040258A1

公开(公告)日：2003-02-27

申请号：US10075891

申请日：2002-02-14

Inventor： Hermann J. Stadtfeld ,  Craig R. Ronald

IPC: B24B049/00 ,  B24B051/00

CPC classification number: B23F9/025 ,  B23F9/10 ,  B23F23/006 ,  Y10T409/103975 ,  Y10T409/104134

Abstract: A machine for manufacturing bevel and hypoid gears including a column, a first spindle, and a second spindle is provided. The column has a first side and a second side. The first spindle is movably secured to the first side and rotatable about a first axis. The second spindle is movably secured to the second side and rotatable about a second axis. The first and second spindles are movable linearly with respect to one another in three directions. At least one of the first and second spindles is angularly movable relative to its respective side about a vertical pivot axis.

Abstract translation: 提供一种用于制造包括柱，第一主轴和第二主轴的斜面和准双曲面齿轮的机器。 该柱具有第一侧和第二侧。 第一主轴可移动地固定到第一侧并可围绕第一轴线旋转。 第二主轴可移动地固定到第二侧并可围绕第二轴线旋转。 第一和第二主轴在三个方向上可相对于彼此线性地移动。 第一和第二主轴中的至少一个相对于其相应的侧面围绕垂直枢转轴线成角度地移动。

公开(公告)号：US20020173231A1

公开(公告)日：2002-11-21

申请号：US10128282

申请日：2002-04-24

Applicant: JSR CORPORATION

Inventor： Kou Hasegawa

IPC: B24B049/00 ,  B24B051/00 ,  B24B001/00

CPC classification number: B24B37/205 ,  B24B37/013 ,  B24D3/344 ,  B24D13/12

Abstract: An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoint detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the invention comprises a water-insoluble matrix material such as crosslinked 1,2-polybutadiene, and a water-soluble particle such as null-cyclodextrin dispersed in this water-insoluble matrix material, and has a light transmitting properties so that a polishing endpoint can be detected with a light.

Abstract translation: 本发明的目的是提供一种用于半导体晶片的抛光垫和用于抛光配备有该半导体晶片的半导体晶片的半导体晶片的层叠体，其可以在不降低抛光性能的情况下进行光学终点检测以及半导体的抛光方法 晶圆使用它们。 本发明的抛光垫包括水不溶性基质材料如交联的1,2-聚丁二烯和分散在该水不溶性基质材料中的水溶性颗粒如β-环糊精，具有透光性能，使得 可以用光检测抛光终点。

公开(公告)号：US20020173229A1

公开(公告)日：2002-11-21

申请号：US10147803

申请日：2002-05-20

Applicant: Tokyo Seimitsu Co. Ltd.

Inventor： Kazuo Kobayashi

IPC: B24B049/00 ,  B24B051/00

CPC classification number: B24B37/345 ,  B24B49/00 ,  H01L21/67132 ,  H01L21/67155 ,  H01L21/67271

Abstract: The wafer planarization apparatus comprises a processing part which holds a wafer through a protective sheet adhering to the obverse of the wafer and processes the reverse of the wafer, an inspecting device which inspects the wafer having been processed by the processing part, a frame adhering part which adheres a frame through a sheet to the reverse of the wafer having been inspected by the inspecting device, a peeling part which peels the protective sheet from the wafer to which the frame has been adhered, and a transporting device which transports the wafer between the processing part, the inspecting device, the frame adhering part, and the peeling part, so that the series of processing for the wafer can be systematized in line.

Abstract translation: 晶片平面化装置包括：处理部，其通过粘附在晶片正面的保护片保持晶片，并处理晶片反面;检查装置，其检查经处理部处理的晶片;框架粘贴部 其通过片材将框架粘贴到被检查装置检查的晶片的背面;剥离部，其将保护片从已经粘附有框架的晶片剥离;以及传送装置，其将晶片在 处理部分，检查装置，框架粘附部分和剥离部分，使得可以将一系列用于晶片的处理系统化。