Abstract:
The method is to fabricate a microelectronic device with an integrated antenna. This method may include forming at least a first semiconducting layer on a substrate, forming in at least one zone of the first semiconducting layer of a structure to limit the circulation of current in the zone of the first semiconducting layer, forming a plurality of layers on the semiconducting layer and at least one antenna in the plurality of layers, with the antenna being formed opposite the zone. The antenna may be operable at radio frequencies above 10 GHz, and may have an improved emission efficiency.
Abstract:
A test structure for integrated electronic circuits having a substantially planar substrate coated with a plurality of metallization layers comprises a switching element formed on the surface of the substrate. It also comprises a tunnel formed in one or more metallization layers between the top of the switching element and the front side of the integrated circuit. This tunnel is designed to channel photons emitted by the switching element towards the front side.
Abstract:
Forming conductive bumps on an integrated circuit wafer by sucking in conductive balls into cavities of a mask, placing the mask supporting the balls on the integrated circuit wafer, temporarily attaching the mask and the wafer together, cutting the suction, and submitting the mask and wafer assembly to a thermal ball melting processing.
Abstract:
A memory circuit includes a plurality of storage cells (100) arranged in rows and columns thus forming a storage matrix. The storage cells (100) corresponding to the same bit line (21-23) are divided into several groups (60-61) of cells for the same column, these groups having their own biasing circuit (200) in order to act on the difference between the logic level low voltage and the substrate voltage of the link transistors. When a storage cell is not selected, the biasing circuit makes the voltage between source/drain and substrate equal to a negative voltage in order to minimize the leakage current. During a read operation, the substrate voltage and the source/drain voltage are brought back to the same level such that a maximum current will flow when the link transistor is conducting.
Abstract:
A method is described for fixing a lens of an optical group with respect to an optical sensor in an image acquisition device comprising the steps of housing the optical sensor in a housing, fixing a lower holder of the optical group to the housing, aligning an upper holder of the optical group, wherein the lens is placed, with the sensor so as to align a focusing point of the lens with respect to the sensor, welding the upper holder to the lower holder. The welding step may be performed by means of ultrasounds.
Abstract:
A method is provided for decoding an encoded binary data signal and generating a clock signal that is synchronous with the encoded data signal. There is generated, from the encoded data signal, an edge detection signal comprising four pulses per binary state of the encoded data signal. The encoded data signal is sampled every four pulses of the edge detection signal so as to obtain a binary signal of decoded data, and from the edge detection signal there is generated a binary clock signal that is synchronous with the encoded data signal and changes logic state every two pulses of the edge detection signal.
Abstract:
An anti-collision method to identify and select contactless electronic modules (MDL) by a terminal is provided. A module may generate a random identification number prior to a communication, and respond to a general or complementary identification request on a time slot that varies according to its identification number. A non-selected module may generate a new random identification number when it receives a complementary identification request. Thus, the time slot of a non-selected module provided in response to a complementary identification request is not statistically the same as its time slot in response to a previous identification request, and it varies according to its identification number (ID).
Abstract:
A synchronization process may include detecting successive horizontal synchronization pulses of a video signal, and a phase comparison between the successive detected pulses and the successive transitions of the reference signal for controlling the oscillator of the phase-locked loop. The detection of each horizontal synchronization pulse may include sampling the video signal, low-pass filtering the sampled signal, thresholding the filtered signal for leaving pulses having a level below a threshold. The synchronization process may also include selecting, as a function of predetermined selection criteria, from among the residual pulses within an observation window centered on a transition of the reference signal for the one which corresponds to the horizontal synchronization pulse.
Abstract:
An integrated memory circuit includes at least one memory cell formed by a single transistor whose gate (GR) has a lower face insulated from a channel region by an insulation layer containing a succession of potential wells, which are substantially arranged at a distance from the gate and from the channel region in a plane substantially parallel to the lower face of the gate. The potential wells are capable of containing an electric charge which is confined in the plane and can be controlled to move in the plane towards a first confinement region next to the source region or towards a second confinement region next to the drain region so as to define two memory states for the cell.
Abstract:
A magnetic sensor includes a thin deformable membrane made of a conductive material forming a first plate of a capacitor which conducts an electric current therethrough. A second capacitor plate of the capacitor includes a doped region of a semiconductor substrate. A layer of a gaseous dielectric separates the two plates. The membrane deforms due to the effect of the Lorentz force generated by a magnetic field lying in the plane of the membrane and perpendicular to the lines of current being conducted therethrough. In addition, a process for fabricating this magnetic sensor is also provided as well as a device for measuring a magnetic field using the magnetic sensor.