公开(公告)号：US20100051784A1

公开(公告)日：2010-03-04

申请号：US12198264

申请日：2008-08-26

申请人： Christopher Parks

发明人： Christopher Parks

IPC分类号： H01L27/146

CPC分类号： H04N5/3741 ,  H04N5/347 ,  H04N5/3745

摘要： An image sensor includes (a) a plurality of pixels, wherein each pixel comprises:(i) at least one photosensor; (ii) at least one transfer gate connecting the photosensor to a floating diffusion; (iii) an output transistor connected to the floating diffusion; (iv) a first reset transistor connected between the floating diffusion and a summing node; (v) a second reset transistor connected to the summing node; and (b) a first summing transistor connecting together the summing nodes of two or more pixels.

摘要翻译： 图像传感器包括（a）多个像素，其中每个像素包括：（i）至少一个光电传感器; （ii）将光电传感器连接到浮动扩散器的至少一个传输栅极; （iii）连接到浮动扩散的输出晶体管; （iv）连接在浮动扩散和求和节点之间的第一复位晶体管; （v）连接到求和节点的第二复位晶体管; 和（b）将两个或更多像素的求和节点连接在一起的第一求和晶体管。

公开(公告)号：US07643078B2

公开(公告)日：2010-01-05

申请号：US11437536

申请日：2006-05-19

申请人： Christopher Parks ,  H. Marc Hunt

发明人： Christopher Parks ,  H. Marc Hunt

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01N27/148

CPC分类号： H04N5/347 ,  H04N5/37213

摘要： A charge coupled device having a plurality of non-adjacent first gate electrode pairs; a plurality of second gate electrode pairs placed in every second space between the first gate electrode pairs; a plurality of third gate electrode pairs placed in the spaces between the first gate electrode pairs not occupied by the second gate electrode pairs; wherein, in a full resolution mode, the first gate electrode pairs are clocked substantially 180 degrees out of phase with respect to the second and third gate electrode pairs and the second and third gate electrode pairs are clocked substantially equally; and wherein, in a half resolution, double speed mode, the second and third gate electrode pairs are clocked substantially 180 degrees out of phase with respect to each other and substantially 50% duty cycle and the first gate electrode pairs are clocked with 25% or less duty cycle and 90 degrees out of phase with respect to the second gate electrode pairs.

摘要翻译： 一种具有多个不相邻的第一栅电极对的电荷耦合器件; 多个第二栅电极对，放置在第一栅电极对之间的每第二空间中; 放置在未被第二栅电极对占据的第一栅电极对之间的空间中的多个第三栅电极对; 其中，在全分辨率模式中，第一栅极电极对相对于第二和第三栅极电极对基本上基本相差180度，并且第二和第三栅电极对被基本相等地计时; 并且其中，在半分辨率双倍速模式中，第二和第三栅极电极对相对于彼此基本上为180度相位，并且基本上为50％占空比，并且第一栅电极对以25％或 相对于第二栅极电极对，占空比小并且相位相差90度。

公开(公告)号：US20090314928A1

公开(公告)日：2009-12-24

申请号：US12141993

申请日：2008-06-19

申请人： Christopher Parks

发明人： Christopher Parks

IPC分类号： H01L27/146

CPC分类号： H01L27/14629 ,  H01L27/14627

摘要： An image sensor includes a plurality of pixels, each pixel includes a first photosensitive region that collects charge in response to light and having a first sensitivity; a second photosensitive region that collects charge in response to light and having a second sensitivity that is lower than the sensitivity of the first photosensitive region; and a polarizer spanning the second photosensitive region.

摘要翻译： 图像传感器包括多个像素，每个像素包括响应于光而收集电荷且具有第一灵敏度的第一光敏区域; 第二感光区域，其响应于光而收集电荷并具有低于第一感光区域的灵敏度的第二灵敏度; 以及偏振器跨越第二光敏区域。

公开(公告)号：US20080018767A1

公开(公告)日：2008-01-24

申请号：US11490383

申请日：2006-07-20

申请人： Christopher Parks

发明人： Christopher Parks

IPC分类号： H04N5/335

CPC分类号： H01L29/768 ,  H01L27/14621 ,  H01L27/14831 ,  H01L27/14887 ,  H04N5/335 ,  H04N5/3458 ,  H04N5/347 ,  H04N5/37213 ,  H04N9/045

摘要： An image sensor includes a plurality of pixels overlaid with a color filter pattern of at least two colors having the same color on every other pixel in one direction; three or more charge-coupled devices oriented parallel to the every other pixel color filter repeat pattern; a charge sensing amplifier at the output of at least two of the charge couple devices; each charge-coupled device having a first and a second gate; a CCD-to-CCD transfer gate connecting adjacent charge-coupled devices with the first gate being on one side of the CCD-to-CCD transfer gate and the second gate being on the opposite side of the CCD-to-CCD transfer gate; all CCD-to-CCD transfer gates are electrically connected together; all first gates are electrically connected; and all second gates are electrically connected.

摘要翻译： 图像传感器包括在一个方向上的每隔一个像素上具有与具有相同颜色的至少两种颜色的滤色器图案重叠的多个像素; 三个或更多个电荷耦合器件，其平行于每个其它像素滤色器重复图案定向; 在至少两个电荷耦合器件的输出端处的电荷感测放大器; 每个电荷耦合器件具有第一和第二栅极; 连接相邻的电荷耦合器件与CCD至CCD传输门的一侧上的第一栅极的CCD至CCD传输门，第二栅极位于CCD至CCD传输门的相对侧; 所有CCD至CCD传输门电连接在一起; 所有第一个门电气连接; 并且所有第二门电连接。

公开(公告)号：US20080017892A1

公开(公告)日：2008-01-24

申请号：US11488961

申请日：2006-07-19

申请人： Christopher Parks ,  John P. McCarten

发明人： Christopher Parks ,  John P. McCarten

IPC分类号： H01L27/148

CPC分类号： H04N5/335 ,  H01L27/14843 ,  H01L27/14887 ,  H04N5/343 ,  H04N5/347 ,  H04N5/3592 ,  H04N5/3728

摘要： An image sensor includes a plurality of pixels for converting incident photons into electrical charge; an overflow drain to draw off excess charge from at one or more of the pixels; a mechanism for summing charge from two or more of the pixels; a first network of resistive devices generating a first overflow drain voltage where at least one of the resistive devices has, in parallel, a fuse that can be opened in response to an external stimulus to provide the optimum overflow drain voltage for pixel anti-blooming protection and saturation signal level for when a plurality of pixels are summed together; and a second network of resistive devices connected to the first network of resistive devices generating a second overflow drain voltage where the second overflow drain voltage is a fraction of the first overflow drain voltage and the second overflow drain voltage provides the optimum overflow drain voltage for pixel anti-blooming and saturation signal level for when none or substantially none of the plurality of pixels are summed together.

摘要翻译： 图像传感器包括用于将入射光子转换成电荷的多个像素; 溢出漏极，以从一个或多个像素抽出多余的电荷; 用于从两个或更多个像素求和电荷的机构; 电阻器件的第一网络产生第一溢出漏极电压，其中至少一个电阻器件具有并联的并联的熔丝，其可以响应于外部刺激而被打开以提供用于像素防起霜保护的最佳溢出漏极电压 以及当多个像素相加在一起时的饱和度信号电平; 以及连接到第一电阻器件网络的电阻器件的第二网络，其产生第二溢出漏极电压，其中第二溢出漏极电压是第一溢出漏极电压的一部分，并且第二溢出漏极电压为像素提供最佳溢出漏极电压 当没有或基本上没有多个像素被相加在一起时，防起霜和饱和信号电平。

公开(公告)号：US20070268390A1

公开(公告)日：2007-11-22

申请号：US11437536

申请日：2006-05-19

申请人： Christopher Parks ,  H. Marc Hunt

发明人： Christopher Parks ,  H. Marc Hunt

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N5/347 ,  H04N5/37213

摘要： A charge coupled device having a plurality of non-adjacent first gate electrode pairs; a plurality of second gate electrode pairs placed in every second space between the first gate electrode pairs; a plurality of third gate electrode pairs placed in the spaces between the first gate electrode pairs not occupied by the second gate electrode pairs; wherein, in a full resolution mode, the first gate electrode pairs are clocked substantially 180 degrees out of phase with respect to the second and third gate electrode pairs and the second and third gate electrode pairs are clocked substantially equally; and wherein, in a half resolution, double speed mode, the second and third gate electrode pairs are clocked substantially 180 degrees out of phase with respect to each other and substantially 50% duty cycle and the first gate electrode pairs are clocked with 25% or less duty cycle and 90 degrees out of phase with respect to the second gate electrode pairs.

摘要翻译： 一种具有多个不相邻的第一栅电极对的电荷耦合器件; 多个第二栅电极对，放置在第一栅电极对之间的每第二空间中; 放置在未被第二栅电极对占据的第一栅电极对之间的空间中的多个第三栅电极对; 其中，在全分辨率模式中，第一栅极电极对相对于第二和第三栅极电极对基本上基本相差180度，并且第二和第三栅电极对被基本相等地计时; 并且其中，在半分辨率双倍速模式中，第二和第三栅极电极对相对于彼此基本上为180度相位，并且基本上为50％占空比，并且第一栅电极对以25％或 相对于第二栅极电极对，占空比小并且相位相差90度。

公开(公告)号：US20070254413A1

公开(公告)日：2007-11-01

申请号：US11412034

申请日：2006-04-26

申请人： Christopher Parks ,  John McCarten ,  Joseph Summa

发明人： Christopher Parks ,  John McCarten ,  Joseph Summa

IPC分类号： H01L21/339 ,  H01L21/338

CPC分类号： H01L29/76833 ,  H01L27/14831 ,  H01L29/66946

摘要： A method of forming a charge-coupled device including the steps of forming well or substrate of a first conductivity type; a buried channel of a second conductivity type; a plurality of first gate electrodes; partially coating the first gate electrodes with a mask substantially aligned to an edge of the first gate electrodes; implanting ions of the first conductivity type of sufficient energy to penetrate the first gates and into the buried channel; and a plurality of second gate electrodes covering regions each over the buried channel between the first gate electrodes.

摘要翻译： 一种形成电荷耦合器件的方法，包括形成第一导电类型的阱或衬底的步骤; 第二导电类型的埋置通道; 多个第一栅电极; 用基本上与第一栅电极的边缘对齐的掩模部分地涂覆第一栅电极; 注入第一导电类型的足够能量的离子以穿透第一栅极并进入掩埋沟道; 以及多个第二栅电极，覆盖在第一栅电极之间的掩埋沟道上的各个区域。

公开(公告)号：US20070002165A1

公开(公告)日：2007-01-04

申请号：US11169852

申请日：2005-06-29

申请人： Christopher Parks

发明人： Christopher Parks

IPC分类号： H04N5/238

CPC分类号： H04N5/335 ,  H04N5/2353

摘要： A method for capturing a sequence of images, the method includes the steps of capturing a first image on an image sensor having a plurality of photosensitive areas having a first portion of photosensitive areas and a second portion of photosensitive areas; transferring the first portion of the first captured image to a first plurality of storage mechanisms; capturing a second image on the image sensor; transferring the second portion of the second captured image to a second plurality of the storage mechanisms; capturing a third image on the image sensor; reading out the first portion of the first captured image from the first plurality of storage mechanisms and reading out the second portion of the second captured image from the second plurality of storage mechanisms; and reading out the third image.

摘要翻译： 一种用于捕获图像序列的方法，所述方法包括以下步骤：在具有多个感光区域的图像传感器上捕获第一图像，所述感光区域具有感光区域的第一部分和感光区域的第二部分; 将第一捕获图像的第一部分转移到第一多个存储机构; 拍摄图像传感器上的第二个图像; 将第二捕获图像的第二部分转移到第二多个存储机构; 拍摄图像传感器上的第三个图像; 从第一多个存储机构读出第一拍摄图像的第一部分，并从第二多个存储机构读出第二拍摄图像的第二部分; 并阅读第三张图片。

公开(公告)号：US20060270092A1

公开(公告)日：2006-11-30

申请号：US11491009

申请日：2006-07-21

申请人： David Nichols ,  David Losee ,  Christopher Parks

发明人： David Nichols ,  David Losee ,  Christopher Parks

IPC分类号： H01L21/00

CPC分类号： H01L27/14812 ,  H01L27/14623 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14837 ,  H01L27/14843

摘要： An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring layer for low resistance strapping of poly crystalline silicon (polysilicon) gate electrodes for the vertical charge transfer region. Plugs provided by a separate metallization layer connect the refractory light shield to the polysilicon gate electrode. These plugs allow high temperature processing after refractory light shield patterning for improved sensor performance without degradation of the polysilicon gate electrode or the refractory lightshield layer.

公开(公告)号：US07102185B2

公开(公告)日：2006-09-05

申请号：US10872607

申请日：2004-06-21

申请人： David N. Nichols ,  David L. Losee ,  Christopher Parks

发明人： David N. Nichols ,  David L. Losee ,  Christopher Parks

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L27/14 ,  H01L31/00 ,  H01L31/0232

CPC分类号： H01L27/14812 ,  H01L27/14623 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14837 ,  H01L27/14843

摘要： An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring layer for low resistance strapping of poly crystalline silicon (polysilicon) gate electrodes for the vertical charge transfer region. Plugs provided by a separate metallization layer connect the refractory light shield to the polysilicon gate electrode. These plugs allow high temperature processing after refractory light shield patterning for improved sensor performance without degradation of the polysilicon gate electrode or the refractory lightshield layer.