公开(公告)号：US08896577B2

公开(公告)日：2014-11-25

申请号：US13422384

申请日：2012-03-16

Applicant: Seung-eon Ahn ,  I-hun Song ,  Sang-hun Jeon ,  Young Kim

Inventor： Seung-eon Ahn ,  I-hun Song ,  Sang-hun Jeon ,  Young Kim

IPC: G06F3/042 ,  G06F3/041

CPC classification number: G06F3/0421 ,  G06F3/0412 ,  G06F3/0416 ,  G06F3/042

Abstract: An optical touch screen apparatus in which an oxide semiconductor transistor is used as a light sensing device, and a method of driving the optical touch screen apparatus. The optical touch screen apparatus includes an array including a plurality of light sensing pixels for sensing incident light, a gate driver for providing each of the light sensing pixels with a gate voltage and a reset signal and a signal output unit for receiving a light sensing signal from each of the plurality of light sensing pixels to output a data signal. The gate driver includes a plurality of gate lines that provide a gate voltage to each of the light sensing pixels and at least one reset line that provides a reset signal to each of the light sensing pixels and is electrically connected to the plurality of light sensing pixels.

Abstract translation: 使用氧化物半导体晶体管作为光感测装置的光学触摸屏装置以及驱动光学触摸屏装置的方法。 所述光学触摸屏装置包括：包括用于感测入射光的多个感光像素的阵列;用于为每个所述感光像素提供栅极电压和复位信号的栅极驱动器;以及信号输出单元，用于接收光线感测信号 从多个感光像素中的每一个传输数据信号。 栅极驱动器包括多个栅极线，其向每个光感测像素提供栅极电压，以及至少一个复位线，其向每个光感测像素提供复位信号，并且电连接到多个光感测像素 。

公开(公告)号：US08735882B2

公开(公告)日：2014-05-27

申请号：US12929323

申请日：2011-01-14

Applicant: Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

Inventor： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

IPC: H01L29/12

CPC classification number: H01L29/7869

Abstract: A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO)  Formula 1 wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦ about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

Abstract translation: 半导体器件可以包括由下面的式1表示的复合物作为有源层。 x（Ga 2 O 3）y（In 2 O 3）z（ZnO）式1其中约0.75＆lt; lE; x / z和nlE;约3.15和约0.55≤n1E; y / z＆ 约1.70。 可以通过调节与锌（Zn）氧化物混合的镓（Ga）氧化物和铟（In））的量来提高驱动晶体管的开关特性并提高光学灵敏度。

公开(公告)号：US20130241881A1

公开(公告)日：2013-09-19

申请号：US13607019

申请日：2012-09-07

Applicant: Sang-hun JEON ,  I-hun SONG ,  Seung-eon AHN

Inventor： Sang-hun JEON ,  I-hun SONG ,  Seung-eon AHN

IPC: G06F3/042 ,  H01L31/0224 ,  H01L29/786

CPC classification number: H01L31/1136 ,  G01J1/42 ,  G01J2001/4473 ,  G06F3/0421 ,  G06F2203/04103 ,  H01L31/032

Abstract: Photosensing transistors, display panels employing a photosensing transistor, and methods of manufacturing the same, include a gate layer, a gate insulation layer on the gate layer, a channel layer on the gate insulation layer, an etch stop layer on a partial area of the channel layer, a source and a drain on the channel layer and separated from each other with the etch stop layer being interposed between the source and the drain, and a passivation layer covering the source, the drain, and the etch stop layer, wherein the source is separated from the etch stop layer.

Abstract translation: 采用光敏晶体管的感光晶体管，显示面板及其制造方法包括栅极层，栅极层上的栅极绝缘层，栅极绝缘层上的沟道层，位于栅极绝缘层的局部区域上的蚀刻停止层 沟道层，沟道层上的源极和漏极，并且彼此分离，其中蚀刻停止层插入在源极和漏极之间，以及钝化层，覆盖源极，漏极和蚀刻停止层，其中， 源与蚀刻停止层分离。

公开(公告)号：US20130050148A1

公开(公告)日：2013-02-28

申请号：US13434164

申请日：2012-03-29

Applicant: Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn ,  Young Kim ,  Chang-jung Kim ,  Yong-woo Jeon

Inventor： Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn ,  Young Kim ,  Chang-jung Kim ,  Yong-woo Jeon

IPC: G06F3/042

CPC classification number: G06F3/042 ,  G06F3/0386 ,  H01L27/14679

Abstract: Optical touch screen apparatuses with remote sensing and touch sensing by using a light sensor transistor including an oxide semiconductor transistor. The optical touch screen apparatus includes a pixel array of a plurality of sensing pixels arranged in a plurality of rows and a plurality of columns. Each of the sensing pixels includes a light sensing pixel for sensing light that is irradiated by an external light source and a touch sensing pixel for sensing display light that is reflected by a screen touch. The light sensing pixel includes a first light sensor transistor and a first switch transistor connected each other in series, and the touch sensing pixel includes a second light sensor transistor and a second switch transistor connected each other in series.

Abstract translation: 通过使用包括氧化物半导体晶体管的光传感器晶体管，具有遥感和触摸感测的光学触摸屏设备。 光学触摸屏装置包括排列成多行和多列的多个感测像素的像素阵列。 每个感测像素包括用于感测由外部光源照射的光的感光像素和用于感测被屏幕触摸反射的显示光的触摸感测像素。 感光像素包括串联连接的第一光传感器晶体管和第一开关晶体管，并且触摸感测像素包括彼此串联连接的第二光传感器晶体管和第二开关晶体管。

公开(公告)号：US08324628B2

公开(公告)日：2012-12-04

申请号：US12073102

申请日：2008-02-29

Applicant: Sun-il Kim ,  I-hun Song ,  Young-soo Park ,  Dong-hun Kang ,  Chang-jung Kim ,  Jae-chul Park

Inventor： Sun-il Kim ,  I-hun Song ,  Young-soo Park ,  Dong-hun Kang ,  Chang-jung Kim ,  Jae-chul Park

IPC: H01L29/04 ,  H01L21/20

CPC classification number: H01L29/7869

Abstract: Provided is a channel layer for a thin film transistor, a thin film transistor and methods of forming the same. A channel layer for a thin film transistor may include IZO (indium zinc oxide) doped with a transition metal. A thin film transistor may include a gate electrode and the channel layer formed on a substrate, a gate insulating layer formed between the gate electrode and channel layer, and a source electrode and a drain electrode which contact ends of the channel layer.

Abstract translation: 提供了一种用于薄膜晶体管的沟道层，薄膜晶体管及其形成方法。 用于薄膜晶体管的沟道层可以包括掺杂有过渡金属的IZO（氧化铟锌）。 薄膜晶体管可以包括栅电极和形成在衬底上的沟道层，形成在栅极和沟道层之间的栅极绝缘层，以及与沟道层的端部接触的源电极和漏电极。

公开(公告)号：US20120274608A1

公开(公告)日：2012-11-01

申请号：US13545623

申请日：2012-07-10

Applicant: Young Kim ,  I-hun Song ,  Seung-eon Ahn ,  Sang-hun Jeon ,  Chang-jung Kim ,  Sung-ho Park

Inventor： Young Kim ,  I-hun Song ,  Seung-eon Ahn ,  Sang-hun Jeon ,  Chang-jung Kim ,  Sung-ho Park

IPC: H01L27/148 ,  G06F3/042

CPC classification number: G01J1/44 ,  G06F3/0386 ,  G06F3/0412 ,  G06F3/042 ,  G09G3/3648 ,  H01L27/1225 ,  H01L27/14609 ,  H01L27/14681 ,  H01L31/1136 ,  H04N5/3745

Abstract: In a simplified light sensing circuit, a light sensing apparatus including the light sensing circuit, a method of driving the light sensing apparatus, and an image acquisition apparatus and optical touch screen apparatus including the light sensing apparatus, the light sensing circuit includes an oxide semiconductor transistor including a channel layer including an oxide semiconductor material, for each pixel. The oxide semiconductor transistor is configured to operate as a light sensing device that senses light and a switch that outputs light sensing data.

Abstract translation: 在简化的光感测电路中，包括光感测电路的光感测装置，驱动光检测装置的方法以及包括光感测装置的图像获取装置和光学触摸屏装置，光感测电路包括氧化物半导体 晶体管，其包括用于每个像素的包括氧化物半导体材料的沟道层。 氧化物半导体晶体管被配置为作为感测光的光感测装置和输出光检测数据的开关进行操作。

公开(公告)号：US20120139876A1

公开(公告)日：2012-06-07

申请号：US13165194

申请日：2011-06-21

Applicant: Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn ,  Chang-jung Kim

Inventor： Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn ,  Chang-jung Kim

IPC: G06F3/042 ,  H01L31/18 ,  H01L31/0264

CPC classification number: G06F3/0412 ,  G06F3/0386 ,  G06F3/042 ,  G06F2203/04103

Abstract: A light sensing circuit using an oxide semiconductor transistor, a method of manufacturing the light sensing circuit, and an optical touch panel including the light sensing circuit. Because the light sensing circuit includes only one light sensor transistor and one switch transistor formed on the same substrate, a structure of the light sensing circuit is simplified. Furthermore, because the light sensor transistor and the switch transistor have the same structure, a method of manufacturing the light sensing circuit is also simplified. Also, since an optical touch panel or an image acquisition apparatus using the light sensing circuit uses the light sensing circuit having a simple structure and does not use a capacitor, the optical touch panel or the image acquisition apparatus may be made thinner and larger.

Abstract translation: 使用氧化物半导体晶体管的光感测电路，制造光感测电路的方法以及包括光感测电路的光学触摸面板。 由于光感测电路仅在一个基板上形成一个光传感器晶体管和一个开关晶体管，因此简化了光感测电路的结构。 此外，由于光传感器晶体管和开关晶体管具有相同的结构，因此也简化了光感测电路的制造方法。 此外，由于使用光感测电路的光学触摸面板或图像获取装置使用具有简单结构的光感测电路并且不使用电容器，所以可以使光学触摸面板或图像采集装置变得越来越薄。

公开(公告)号：US20110272689A1

公开(公告)日：2011-11-10

申请号：US12929301

申请日：2011-01-13

Applicant: Jae-chul Park ,  I-hun Song ,  Chang-jung Kim

Inventor： Jae-chul Park ,  I-hun Song ,  Chang-jung Kim

IPC: H01L31/0248

CPC classification number: G02F1/13338 ,  G02F1/1368 ,  G06F3/0412 ,  G06F3/042 ,  H01L27/1225

Abstract: An optical touch panel may be used remotely to control a large-sized display device. According to a method of fabricating the optical touch panel, an optical sensor transistor for sensing light and a switch transistor for drawing data can be formed together on the same substrate by using a relatively simple process. The optical touch panel may include an optical sensor transistor and a switch transistor. The optical sensor transistor may be configured to sense light and the switch transistor may be configured to draw data from the optical sensor transistor. The optical sensor transistor may include a light sensitive oxide semiconductor material as a channel layer. The switch transistor may include a non-light sensitive oxide semiconductor material as a channel layer.

Abstract translation: 可以远程地使用光学触摸面板来控制大型显示装置。 根据制造光学触摸面板的方法，可以通过使用相对简单的工艺在相同的衬底上一起形成用于感测光的光学传感器晶体管和用于绘制数据的开关晶体管。 光学触摸面板可以包括光学传感器晶体管和开关晶体管。 光学传感器晶体管可以被配置为感测光，并且开关晶体管可以被配置为从光学传感器晶体管绘制数据。 光传感器晶体管可以包括作为沟道层的光敏氧化物半导体材料。 开关晶体管可以包括作为沟道层的非光敏氧化物半导体材料。

公开(公告)号：US20110261017A1

公开(公告)日：2011-10-27

申请号：US12926922

申请日：2010-12-17

Applicant: Sung-ho Park ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon ,  Seung-eon Ahn

Inventor： Sung-ho Park ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon ,  Seung-eon Ahn

IPC: G06F3/042 ,  G01J1/42 ,  H01L27/146 ,  H01J40/02

CPC classification number: H01L27/14681 ,  G01J1/44 ,  G06F3/03542 ,  G06F3/03545 ,  G06F3/0386 ,  G06F3/0412 ,  G09G3/3406 ,  G09G3/3648 ,  G09G3/3696 ,  G09G2320/043 ,  G09G2320/0626 ,  H01L27/1225 ,  H01L27/14609 ,  H01L31/1136 ,  H04N5/3745

Abstract: Example embodiments are directed to light sensing circuits having a relatively simpler structure by using light-sensitive oxide semiconductor transistors as light sensing devices, and remote optical touch panels and image acquisition apparatuses, each including the light sensing circuits. The light sensing circuit includes a light-sensitive oxide semiconductor transistor in each pixel, wherein the light-sensitive oxide semiconductor transistor is configured as a light sensing device, and a driving circuit that outputs data. The light sensing circuit may have a relatively simple circuit structure including a plurality of transistors in one pixel. As a result, the structure and operation of the light sensing circuit may be simplified.

Abstract translation: 示例性实施例涉及具有通过使用光敏氧化物半导体晶体管作为光感测装置的相对简单的结构的光感测电路，以及每个包括光感测电路的远程光学触摸面板和图像采集装置。 光感测电路在每个像素中包括光敏氧化物半导体晶体管，其中光敏氧化物半导体晶体管被配置为光感测装置，以及输出数据的驱动电路。 光感测电路可以具有包括一个像素中的多个晶体管的相对简单的电路结构。 结果，可以简化光感测电路的结构和操作。

公开(公告)号：US20110242384A1

公开(公告)日：2011-10-06

申请号：US12923924

申请日：2010-10-14

Applicant: Ji-hyun Hur ,  Sung-ho Park ,  I-hun Song ,  Sang-hun Jeon

Inventor： Ji-hyun Hur ,  Sung-ho Park ,  I-hun Song ,  Sang-hun Jeon

IPC: H04N5/335 ,  H01L27/146

CPC classification number: H01L27/14601 ,  H01L27/14645 ,  H01L31/0264

Abstract: Provided are an image sensor using a light-sensitive oxide semiconductor material as a light-sensitive device and a method of operating the image sensor for acquiring RGB values of incident light in the image sensor, the image sensor includes an array of a plurality of light-sensing cells wherein each of the light-sensing cells includes a light-sensitive oxide semiconductor layer that forms a channel region of an oxide semiconductor transistor. Electronic characteristics of the light-sensitive oxide semiconductor layer vary according to an amount of light irradiated onto the light-sensitive oxide semiconductor layer. Each of the light-sensing cells constitutes a single unit color pixel.

Abstract translation: 提供了使用感光氧化物半导体材料作为感光装置的图像传感器和操作用于获取图像传感器中的入射光的RGB值的图像传感器的方法，图像传感器包括多个光的阵列 其中每个感光单元包括形成氧化物半导体晶体管的沟道区的光敏氧化物半导体层。 光敏氧化物半导体层的电子特性根据照射到光敏氧化物半导体层上的光量而变化。 每个感光单元构成单个单色彩像素。