公开(公告)号：US09576992B2

公开(公告)日：2017-02-21

申请号：US13435666

申请日：2012-03-30

Applicant: Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn ,  Chang-jung Kim ,  Young Kim

Inventor： Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn ,  Chang-jung Kim ,  Young Kim

IPC: H01L27/00 ,  H01L27/146 ,  G06F3/042

CPC classification number: H01L27/14609 ,  G06F3/042 ,  G06F2203/04103

Abstract: Light-sensing apparatuses may include a light sensor transistor and a switching transistor in a light-sensing pixel, the transistors being oxide semiconductor transistors. In the light-sensing apparatus, the light sensor transistor and the switching transistor in the light-sensing pixel may be adjacently formed on one substrate, the switching transistor including a channel material that is relatively less light-sensitive than the light sensor transistor and is stable, and the light sensor transistor includes a channel material that is relatively light-sensitive. The light sensor transistor may include a transparent upper electrode on a surface of a channel, and a negative voltage may be applied to the transparent upper electrode, whereby a threshold voltage shift in a negative voltage direction may be prevented or reduced.

Abstract translation: 光感测装置可以包括光感测像素中的光传感器晶体管和开关晶体管，该晶体管是氧化物半导体晶体管。 在感光装置中，光感测像素中的光传感器晶体管和开关晶体管可以相邻地形成在一个衬底上，该开关晶体管包括与光传感器晶体管相比较不光敏的沟道材料，并且是 并且光传感器晶体管包括相对光敏的通道材料。 光传感器晶体管可以在通道的表面上包括透明上电极，并且可以向透明上电极施加负电压，由此可以防止或减小负电压方向上的阈值电压偏移。

公开(公告)号：US09092081B2

公开(公告)日：2015-07-28

申请号：US12923243

申请日：2010-09-10

Applicant: Sung-ho Park ,  Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Seung-eon Ahn

Inventor： Sung-ho Park ,  Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Seung-eon Ahn

IPC: G06F3/042 ,  G06F3/038 ,  G06F3/041

CPC classification number: G06F3/0386 ,  G06F3/0412

Abstract: A remote touch panel includes a plurality of light sensor cells arranged in two dimensions. Each light sensor cell may include a light-sensitive semiconductor layer and first and second electrodes electrically connected to the light-sensitive semiconductor layer. The remote touch panel may be controlled at a remote distance. For example, a large display apparatus can be easily controlled by using a simple light source device, for example, a laser pointer.

Abstract translation: 远程触摸面板包括以二维布置的多个光传感器单元。 每个光传感器单元可以包括光敏半导体层和电连接到光敏半导体层的第一和第二电极。 远程触摸面板可以被控制在远处。 例如，通过使用简单的光源装置，例如激光指示器，可以容易地控制大型的显示装置。

公开(公告)号：US08842095B2

公开(公告)日：2014-09-23

申请号：US12926922

申请日：2010-12-17

Applicant: Sung-ho Park ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon ,  Seung-eon Ahn

Inventor： Sung-ho Park ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon ,  Seung-eon Ahn

IPC: G06F19/00 ,  G06F3/0354 ,  G06F3/041 ,  G01J1/44 ,  G06F3/038 ,  H01L31/113 ,  H01L27/12 ,  H01L27/146

Abstract: Example embodiments are directed to light sensing circuits having a relatively simpler structure by using light-sensitive oxide semiconductor transistors as light sensing devices, and remote optical touch panels and image acquisition apparatuses, each including the light sensing circuits. The light sensing circuit includes a light-sensitive oxide semiconductor transistor in each pixel, wherein the light-sensitive oxide semiconductor transistor is configured as a light sensing device, and a driving circuit that outputs data. The light sensing circuit may have a relatively simple circuit structure including a plurality of transistors in one pixel. As a result, the structure and operation of the light sensing circuit may be simplified.

公开(公告)号：US20130252395A1

公开(公告)日：2013-09-26

申请号：US13892881

申请日：2013-05-13

Applicant: Sun-ae SEO ,  Young-soo PARK ,  Ran-Ju JUNG ,  Myoung-jae LEE ,  Dong-chul KIM ,  Seung-eon AHN

Inventor： Sun-ae SEO ,  Young-soo PARK ,  Ran-Ju JUNG ,  Myoung-jae LEE ,  Dong-chul KIM ,  Seung-eon AHN

IPC: H01L45/00

CPC classification number: H01L45/165 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146

Abstract: Example embodiments relate to a resistive random access memory (RRAM) and a method of manufacturing the RRAM. A RRAM according to example embodiments may include a lower electrode, which may be formed on a lower structure (e.g., substrate). A resistive layer may be formed on the lower electrode, wherein the resistive layer may include a transition metal dopant. An upper electrode may be formed on the resistive layer. Accordingly, the transition metal dopant may form a filament in the resistive layer that operates as a current path.

Abstract translation: 示例实施例涉及电阻随机存取存储器（RRAM）和制造RRAM的方法。 根据示例性实施例的RRAM可以包括下电极，其可以形成在下结构（例如，衬底）上。 电阻层可以形成在下电极上，其中电阻层可以包括过渡金属掺杂剂。 上电极可以形成在电阻层上。 因此，过渡金属掺杂剂可以在作为电流路径工作的电阻层中形成丝。

公开(公告)号：US20130063400A1

公开(公告)日：2013-03-14

申请号：US13553245

申请日：2012-07-19

Applicant: Seung-eon Ahn ,  I-Hun Song ,  Sang-hun Jeon ,  Young Kim ,  Yong-woo Jeon ,  Chang-jung Kim

Inventor： Seung-eon Ahn ,  I-Hun Song ,  Sang-hun Jeon ,  Young Kim ,  Yong-woo Jeon ,  Chang-jung Kim

IPC: G06F3/042 ,  H01L27/144 ,  H01L31/112

CPC classification number: H01L27/14609 ,  G06F3/0412 ,  G06F3/0421 ,  G06F2203/04103

Abstract: In one embodiment, a light-sensing apparatus includes a light-sensing pixel array that has a plurality of light-sensing pixels arranged in rows and columns; and a gate driver configured to provide the light-sensing pixels with a gate voltage and a reset signal that have inverted phases. Each of the light-sensing pixels includes a light sensor transistor configured to sense light and a switch transistor configured to output a light-sensing signal from the light-sensor transistor. The gate driver includes a plurality of gate lines connected to gates of the switch transistors, a plurality of reset lines connected to gates of the light sensor transistors, and a plurality of phase inverters each connected between a corresponding reset line and a gate line. Thus, when a gate voltage is applied to one of the plurality of gate lines, a reset signal with an inversed phase to the gate voltage may be applied to a corresponding reset line.

Abstract translation: 在一个实施例中，光感测装置包括具有排列成行和列的多个感光像素的感光像素阵列; 以及栅极驱动器，被配置为向所述感光像素提供具有反相的栅极电压和复位信号。 每个感光像素包括被配置为感测光的光传感器晶体管和被配置为输出来自光传感器晶体管的光感测信号的开关晶体管。 栅极驱动器包括连接到开关晶体管的栅极的多个栅极线，连接到光传感器晶体管的栅极的多个复位线，以及各自连接在相应的复位线和栅极线之间的多个相位逆变器。 因此，当栅极电压施加到多条栅极线中的一条栅极线时，具有与栅极电压相反的相位的复位信号可被施加到相应的复位线。

公开(公告)号：US20120267513A1

公开(公告)日：2012-10-25

申请号：US13358862

申请日：2012-01-26

Applicant: Sang-hun JEON ,  I-hun SONG ,  Seung-eon AHN ,  Chang-jung KIM ,  Young KIM

Inventor： Sang-hun JEON ,  I-hun SONG ,  Seung-eon AHN ,  Chang-jung KIM ,  Young KIM

IPC: H01L27/144 ,  H01L31/00

CPC classification number: H01L27/14632 ,  H01L27/1446 ,  H01L27/14603 ,  H01L27/14623

Abstract: According to an example embodiment, a light-sensing apparatus may include an array of light-sensing pixels, a first gate driver, and a signal output unit. Each of the light-sensing pixels may include a light sensor transistor configured to sense light, a switch transistor configured to output a light-sensing signal from the light sensor transistor, and a conductive light-shielding film on a light-incident surface of the switch transistor. The light sensor transistor and the switch transistor may have the same oxide semiconductor transistor structure. The first gate driver may be configured to provide a gate voltage and a negative bias voltage to each of the light-sensing pixels. The signal output unit may be configured to receive the light-sensing signal from each of the light-sensing pixels and output a data signal.

Abstract translation: 根据示例实施例，光感测装置可以包括光感测像素阵列，第一栅极驱动器和信号输出单元。 每个感光像素可以包括被配置为感测光的光传感器晶体管，被配置为从光传感器晶体管输出光感测信号的开关晶体管，以及在所述光传感器晶体管的光入射表面上的导电屏蔽膜 开关晶体管。 光传感器晶体管和开关晶体管可以具有相同的氧化物半导体晶体管结构。 第一栅极驱动器可以被配置为向每个感光像素提供栅极电压和负的偏置电压。 信号输出单元可以被配置为从每个感光像素接收光感测信号并输出​​数据信号。

公开(公告)号：US08207068B2

公开(公告)日：2012-06-26

申请号：US12654395

申请日：2009-12-18

Applicant: Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

Inventor： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

IPC: H01L21/26

CPC classification number: H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

Abstract: Example embodiments relate to a method of fabricating a memory device and a memory device. The method of fabricating a memory device comprises forming a lower electrode and an oxide layer on a lower structure and radiating an energy beam on a region of the oxide layer. The memory device comprises a lower structure and an oxide layer and a lower structure formed on the lower structure, the oxide layer including an electron beam radiation region that received radiation from an electron beam source creating an artificially formed current path through the oxide layer to the lower electrode. A reset current of the memory device may be decreased and stabilized.

Abstract translation: 示例性实施例涉及制造存储器件和存储器件的方法。 制造存储器件的方法包括在下部结构上形成下部电极和氧化物层，并在氧化物层的区域上辐射能量束。 存储器件包括下部结构和形成在下部结构上的下部结构的氧化物层和下部结构，所述氧化物层包括电子束辐射区域，所述电子束辐射区域接收来自电子束源的辐射，从而产生通过氧化物层的人为形成的电流路径到 下电极。 可以减小并稳定存储器件的复位电流。

公开(公告)号：US20110095287A1

公开(公告)日：2011-04-28

申请号：US12929121

申请日：2011-01-03

Applicant: Myoung-Jae Lee ,  In-Kyeong Yoo ,  Eun-Hong Lee ,  Jong-Wan Kim ,  Dong-Chul Kim ,  Seung-Eon Ahn

Inventor： Myoung-Jae Lee ,  In-Kyeong Yoo ,  Eun-Hong Lee ,  Jong-Wan Kim ,  Dong-Chul Kim ,  Seung-Eon Ahn

IPC: H01L29/12

CPC classification number: H01L27/1021 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/73

Abstract: A nonvolatile memory device having self-presence diode characteristics, and/or a nonvolatile memory array including the nonvolatile memory device may be provided. The nonvolatile memory device may include a lower electrode, a first semiconductor oxide layer on the lower electrode, a second semiconductor oxide layer on the first semiconductor oxide layer, and/or an upper electrode on the second semiconductor oxide layer.

Abstract translation: 可以提供具有自身存在二极管特性的非易失性存储器件和/或包括非易失性存储器件的非易失性存储器阵列。 非易失性存储器件可以包括下电极，下电极上的第一半导体氧化物层，第一半导体氧化物层上的第二半导体氧化物层，和/或第二半导体氧化物层上的上电极。

公开(公告)号：US20100214862A1

公开(公告)日：2010-08-26

申请号：US12706756

申请日：2010-02-17

Applicant: Ho Jung Kim ,  Chul Woo Park ,  Sang Beom Kang ,  Hyun Ho Choi ,  Jung Min Lee ,  Seung Eon Ahn

Inventor： Ho Jung Kim ,  Chul Woo Park ,  Sang Beom Kang ,  Hyun Ho Choi ,  Jung Min Lee ,  Seung Eon Ahn

IPC: G11C5/14 ,  G11C8/08

CPC classification number: G11C5/14 ,  G11C5/147 ,  G11C7/22 ,  G11C8/08 ,  G11C8/10 ,  G11C16/04 ,  G11C16/20 ,  G11C29/02 ,  G11C29/021 ,  G11C29/023 ,  G11C29/028 ,  G11C2029/4402 ,  G11C2207/2254

Abstract: A method of changing a parameter in a semiconductor device is provided. The method includes receiving and storing data in a storage region; and changing at least one between a DC characteristic and an AC timing characteristic of a parameter, used to access a non-volatile memory cell included in a memory core of the semiconductor device, according to the data stored in the storage.

Abstract translation: 提供了一种改变半导体器件中的参数的方法。 该方法包括在存储区域中接收和存储数据; 以及根据存储在存储器中的数据，在用于访问包括在半导体器件的存储器核心中的非易失性存储单元的参数的DC特性和AC定时特性之间改变至少一个。

公开(公告)号：US20090184305A1

公开(公告)日：2009-07-23

申请号：US12230223

申请日：2008-08-26

Applicant: Chang-bum Lee ,  Young-soo Park ,  Myung-jae Lee ,  Xianyu Wenxu ,  Bo-soo Kang ,  Seung-eon Ahn ,  Ki-hwan Kim

Inventor： Chang-bum Lee ,  Young-soo Park ,  Myung-jae Lee ,  Xianyu Wenxu ,  Bo-soo Kang ,  Seung-eon Ahn ,  Ki-hwan Kim

IPC: H01L47/00 ,  H01L21/00

CPC classification number: H01L27/24 ,  G11C13/00 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/71 ,  G11C2213/72

Abstract: A resistive memory device includes a first electrode and a first insulation layer arranged on the first electrode. A portion of the first electrode is exposed through a first hole in the first insulation layer. A first variable resistance layer contacts the exposed portion of the first electrode and extends on the first insulation layer around the first hole. A first switching device electrically connects to the first resistive switching layer.

Abstract translation: 电阻式存储器件包括第一电极和布置在第一电极上的第一绝缘层。 第一电极的一部分通过第一绝缘层中的第一孔露出。 第一可变电阻层接触第一电极的暴露部分并在第一绝缘层周围在第一孔周围延伸。 第一开关装置电连接到第一电阻开关层。