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    Process of making a solid state energy conversion device
    61.
    发明授权
    Process of making a solid state energy conversion device 失效
    制造固态能量转换装置的过程

    公开(公告)号：US08772061B2

    公开(公告)日：2014-07-08

    申请号：US13135742

    申请日：2011-07-14

    Applicant: Nathaniel R. Quick ,  Aravinda Kar

    Inventor： Nathaniel R. Quick ,  Aravinda Kar

    IPC: H01L21/00 ,  H01L21/04

    CPC classification number: H01L21/0455 ,  H01L31/03125 ,  H01L31/072 ,  H01L33/305 ,  H01L33/325 ,  Y02E10/50

    Abstract: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts.

    Abstract translation: 公开了一种用于在电磁和电能之间转换能量的固态能量转换装置和制造方法。 固态能量转换装置包括具有第一掺杂区域的宽带隙半导体材料。 在存在用于将第一掺杂区域的一部分转换成宽带隙半导体材料中的第二掺杂区域的掺杂气体的情况下，热能束被引导到宽带隙半导体材料的第一掺杂区域上。 第一和第二欧姆接触被施加到宽带隙半导体材料的第一和第二掺杂区域。 在一个实施例中，固态能量转换装置作为发光装置工作，以便在向第一和第二欧姆接触施加电力时产生电磁辐射。

    Solid state energy photovoltaic device
    62.
    发明授权
    Solid state energy photovoltaic device 失效
    固态能量光伏器件

    公开(公告)号：US08722451B2

    公开(公告)日：2014-05-13

    申请号：US13135736

    申请日：2011-07-14

    Applicant: Nathaniel R. Quick ,  Aravinda Kar

    Inventor： Nathaniel R. Quick ,  Aravinda Kar

    IPC: H01L21/00

    CPC classification number: H01L21/0455 ,  H01L31/03125 ,  H01L31/072 ,  H01L33/305 ,  H01L33/325 ,  Y02E10/50

    Abstract: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts. In another embodiment, the solid state energy conversion device operates as a photovoltaic device to produce electrical power between the first and second Ohmic contacts upon the application of electromagnetic radiation.

    Abstract translation: 公开了一种用于在电磁和电能之间转换能量的固态能量转换装置和制造方法。 固态能量转换装置包括具有第一掺杂区域的宽带隙半导体材料。 在存在用于将第一掺杂区域的一部分转换成宽带隙半导体材料中的第二掺杂区域的掺杂气体的情况下，热能束被引导到宽带隙半导体材料的第一掺杂区域上。 第一和第二欧姆接触被施加到宽带隙半导体材料的第一和第二掺杂区域。 在一个实施例中，固态能量转换装置作为发光装置工作，以便在向第一和第二欧姆接触施加电力时产生电磁辐射。 在另一个实施例中，固态能量转换装置作为光伏器件工作，以在施加电磁辐射时在第一和第二欧姆接触之间产生电力。

    Solid state energy conversion device
    63.
    发明授权
    Solid state energy conversion device 有权
    固态能量转换装置

    公开(公告)号：US08067303B1

    公开(公告)日：2011-11-29

    申请号：US11900488

    申请日：2007-09-12

    Applicant: Nathaniel R. Quick ,  Aravinda Kar

    Inventor： Nathaniel R. Quick ,  Aravinda Kar

    IPC: H01L31/12 ,  H01L21/26

    CPC classification number: H01L21/0455 ,  H01L31/03125 ,  H01L31/072 ,  H01L33/305 ,  H01L33/325 ,  Y02E10/50

    Abstract: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts. In another embodiment, the solid state energy conversion device operates as a photovoltaic device to produce electrical power between the first and second Ohmic contacts upon the application of electromagnetic radiation.

    Abstract translation: 公开了一种用于在电磁和电能之间转换能量的固态能量转换装置和制造方法。 固态能量转换装置包括具有第一掺杂区域的宽带隙半导体材料。 在存在用于将第一掺杂区域的一部分转换成宽带隙半导体材料中的第二掺杂区域的掺杂气体的情况下，热能束被引导到宽带隙半导体材料的第一掺杂区域上。 第一和第二欧姆接触被施加到宽带隙半导体材料的第一和第二掺杂区域。 在一个实施例中，固态能量转换装置作为发光装置工作，以便在向第一和第二欧姆接触施加电力时产生电磁辐射。 在另一个实施例中，固态能量转换装置作为光伏器件工作，以在施加电磁辐射时在第一和第二欧姆接触之间产生电力。

    Optical device and method of making
    64.
    发明申请
    Optical device and method of making 有权
    光学装置及制作方法

    公开(公告)号：US20110211249A1

    公开(公告)日：2011-09-01

    申请号：US13068129

    申请日：2011-05-03

    Applicant: Nathaniel R. Quick ,  Aravinda Kar ,  Islam A. Salama

    Inventor： Nathaniel R. Quick ,  Aravinda Kar ,  Islam A. Salama

    IPC: G02F1/29 ,  G02F1/00

    CPC classification number: H01L21/268 ,  G01J5/08 ,  G01J5/0809 ,  G01J5/58 ,  G01K11/125 ,  H01L21/02678

    Abstract: An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing an optical property of the selected portion to form the optical device in the wide-bandgap semiconductor substrate. The thermal energy beam defines the optical and physical properties of the optical device. The optical device may take the form of an electro-optical device with the addition of electrodes located on the wide-bandgap semiconductor substrate in proximity to the optical device for changing the optical property of the optical device upon a change of a voltage applied to the optional electrodes. The invention is also incorporated into a method of using the optical device for remotely sensing temperature, pressure and/or chemical composition.

    Abstract translation: 公开了用于在宽带隙半导体衬底内形成光学器件的光学器件和方法。 通过将热能束引导到宽带隙半导体衬底的选定部分上以改变所选部分的光学特性以形成宽带隙半导体衬底中的光学器件而形成光学器件。 热能束限定光学装置的光学和物理性质。 光学装置可以采用电光装置的形式，其中添加位于宽带隙半导体衬底上的电极附近的光学装置，用于在施加到所述光学装置的电压变化时改变光学装置的光学特性 可选电极 本发明还包括在使用该光学装置用于远程感测温度，压力和/或化学成分的方法中。

    Apparatus and method for transformation of substrate
    65.
    发明授权
    Apparatus and method for transformation of substrate 有权
    底物转化装置及方法

    公开(公告)号：US07897492B2

    公开(公告)日：2011-03-01

    申请号：US12587399

    申请日：2009-10-06

    Applicant: Nathaniel R. Quick

    Inventor： Nathaniel R. Quick

    IPC: H01L21/00

    CPC classification number: H01L21/02381 ,  H01L21/0242 ,  H01L21/02521 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02667 ,  H01L21/02689

    Abstract: A method is disclosed for forming a layer of a wide bandgap material in a non-wide bandgap material. The method comprises providing a substrate of a non-wide bandgap material and converting a layer of the non-wide bandgap material into a layer of a wide bandgap material. An improved component such as wide bandgap semiconductor device may be formed within the wide bandgap material through a further conversion process.

    Abstract translation: 公开了一种在非宽带隙材料中形成宽带隙材料层的方法。 该方法包括提供非宽带隙材料的衬底并将非宽带隙材料的层转换成宽带隙材料的层。 可以通过进一步的转换过程在宽带隙材料内形成诸如宽带隙半导体器件的改进的部件。

    Fluid filter and method of making
    69.
    发明授权
    Fluid filter and method of making 失效
    流体过滤器和制造方法

    公开(公告)号：US6096212A

    公开(公告)日：2000-08-01

    申请号：US94411

    申请日：1998-06-09

    Applicant: Nathaniel R. Quick ,  Tao Li ,  Robert Malanga

    Inventor： Nathaniel R. Quick ,  Tao Li ,  Robert Malanga

    IPC: B01D29/11 ,  B01D29/15

    CPC classification number: B01D29/111

    Abstract: A fluid filter assembly and method of making is disclosed for filtering a fluid. The fluid filter assembly comprises a first filter component including a filter media comprising a matrix of metallic fibers. A second filter component includes a filter support. A sinter bond bonds the matrix of metallic fibers of the filter media to the second filter component.

    Abstract translation: 公开了一种用于过滤流体的流体过滤器组件和制造方法。 流体过滤器组件包括第一过滤器部件，其包括包含金属纤维基体的过滤介质。 第二过滤器部件包括过滤器支撑件。 烧结键将过滤介质的金属纤维的基体与第二过滤器部件结合。

    Method for making laser synthesized ceramic electronic devices and circuits
    70.
    发明授权
    Method for making laser synthesized ceramic electronic devices and circuits 失效
    制造激光合成陶瓷电子器件和电路的方法

    公开(公告)号：US6054375A

    公开(公告)日：2000-04-25

    申请号：US88046

    申请日：1998-06-01

    Applicant: Nathaniel R. Quick

    Inventor： Nathaniel R. Quick

    IPC: C23C16/04 ,  H01L21/04 ,  H01L21/20 ,  H01L21/48 ,  H01L21/768 ,  H01L21/82 ,  H01L23/525 ,  H05K3/10 ,  H01L21/26 ,  H01L21/42

    CPC classification number: C23C16/047 ,  H01L21/0445 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/4846 ,  H01L21/76888 ,  H01L21/76894 ,  H01L21/8213 ,  H01L23/525 ,  H01L23/5258 ,  H01L29/66068 ,  H05K3/105 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/4918 ,  H01L2924/0002

    Abstract: Laser apparatus and methods are provided for synthesizing areas of ceramic substrates or thin films, such ceramics as Silicon Carbide and Aluminum Nitride, to produce electronic devices and circuits as integral electron circuit components thereof. Circuit components such as conductive tabs, interconnects, wiring patterns, resistors, capacitors, insulating layers and semiconductors are synthesized on the surfaces and within the body of such ceramics. Selected groupings and arrangements of these electronic circuit components within the substrates or thin films provide a wide range of circuits for applications such as digital logic elements and circuits, transistors, sensors for measurements and monitoring effects of chemical and/or physical reactions and interactions of materials, gases, devices or circuits that may utilize sensors. The electronic elements and components offer the advantages of providing thermal compatibilities with the substrate, since they are an integral part thereof and consequently are compatible therewith regarding thermal coefficients of expansion and thermal dissipation.

    Abstract translation: 提供激光装置和方法来合成陶瓷基片或薄膜，例如碳化硅和氮化铝等陶瓷的区域，以制造作为其电子电路组件的电子器件和电路。 诸如导电片，互连件，布线图案，电阻器，电容器，绝缘层和半导体的电路元件被合成在这种陶瓷的表面和体内。 这些电子电路组件在衬底或薄膜内的选择分组和布置为应用提供了广泛的电路，例如数字逻辑元件和电路，晶体管，用于测量和监测化学和/或物理反应和材料相互作用的传感器 ，可能利用传感器的气体，设备或电路。 电子元件和组件提供了提供与基底的热相容性的优点，因为它们是其组成部分，因此与热膨胀系数和散热系数相容。

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