公开(公告)号：US12293081B2

公开(公告)日：2025-05-06

申请号：US18310741

申请日：2023-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Raghu Vamsi Krishna Talanki ,  Archita Khare ,  Eldho P. Mathew ,  Jin In So ,  Jong-Geon Lee ,  Venkata Ravi Shankar Jonnalagadda ,  Vishnu Charan Thummala

IPC: G06F3/06

Abstract: The present disclosure relates to field of Dual In-Line Memory Modules that discloses method and system for generating memory maps. The method comprises detecting, by computing system, at least one of DIMM and one or more Dynamic Random Access Memory (DRAM) chips associated with computing system. The one or more accelerators are configured in at least one of DIMM and one or more DRAM chips. Further, the method includes determining accelerator information for each of one or more accelerators via at least one of Serial Presence Detect (SPD) and Multi-Purpose Register (MPR) associated with at least one of DIMM and one or more DRAM chips. Method includes generating unique memory map for each of one or more accelerators based on accelerator information of corresponding one or more accelerators. As a result, performance of computing system may be improved as accelerator capabilities of one or more accelerators are effectively utilized.

公开(公告)号：US12292773B2

公开(公告)日：2025-05-06

申请号：US18135886

申请日：2023-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wookwang Lee ,  Kwanhoe Ku ,  Kyounghoon Kim ,  Sukgyong Kim ,  Dongrak Shin

IPC: G06F1/26 ,  G06F1/3296 ,  G06F13/38 ,  G06F13/40 ,  G06F13/42 ,  H04R1/10

Abstract: An electronic device includes: a power management module; a connector; a device recognition circuit; and a processor. The processor is configured to: based on a first resistance value detected in a first recognition pin, control the power management module to supply a first power signal to a first power pin and to supply a second power signal to a second recognition pin; receive first identification information of an external device via the first recognition pin or the first data pin; and based on the first identification information, control the power management module to cut off a supply of a first power signal and to maintain a supply of the second power signal.

公开(公告)号：US12292767B2

公开(公告)日：2025-05-06

申请号：US18078395

申请日：2022-12-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younggwon Koo ,  Mijeong Song ,  Gun Lim ,  Hyunje Cho ,  Yongtaek Hong

IPC: G06F1/16 ,  E05D3/12

Abstract: An electronic device includes a first housing including a display module including a display screen, a second housing rotatable with respect to the first housing to define a rotation angle therebetween, the second housing including a first door provided at one surface and a second door provided at a surface which is opposite to the one surface, a hinge unit configured to rotatably connect the first housing to the second housing, and a driving module connecting the hinge unit to each of the first door and second door, the driving module moveable together with rotation of the second housing with respect to the first housing, to open and close the first door and the second door. the driving module is configured to open the first door when the rotation angle is less than a first angle and open the second door when the rotation angle is greater than a second angle.

公开(公告)号：US12292225B2

公开(公告)日：2025-05-06

申请号：US17568356

申请日：2022-01-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungwon Byeon ,  Hyungbum Lee ,  Inyong Hwang

IPC: F25D21/00 ,  F25D21/04 ,  F25D23/06 ,  F25D25/02

Abstract: A refrigerator including an inner case forming a storage chamber, an intermediate partition partitioning the storage chamber in an upper-lower direction, and an evaporator seating part extending in a left-right direction, an evaporator cover to cover the evaporator seating part and formed with a cold air discharge port through which cold air from inside the evaporator seating part is dischargeable to the storage chamber, a first partition fixed to the intermediate partition and a bottom surface of the inner case and including a partition opening communicating with a space between the inner case and an outer case, a partition fixing opening formed in the inner case or the intermediate partition to allow an insulator to pass through the partition opening and the partition fixing opening, and a second partition coupleable to the first partition to divide the storage chamber in the left-right direction.

公开(公告)号：US12292204B2

公开(公告)日：2025-05-06

申请号：US17981855

申请日：2022-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gahyun Kim ,  Byungghun Kim ,  Yongho Seo ,  Wooseog Song ,  Mingi Cho

IPC: F24F1/0033 ,  F24F1/0022 ,  F24F1/0047 ,  F24F1/0067

Abstract: An air conditioner including an arc shaped discharge port formed in a cylindrical member of a housing; a main fan; an arc shaped heat exchanger between the main fan and an inner peripheral surface of the cylindrical member with respect to a radial direction of the cylindrical member; and an auxiliary fan. A discharge flow path is formed between an outer peripheral end of the heat exchanger and the inner peripheral surface of the cylindrical member. A guide flow path is formed outside the discharge flow path with respect to the radial direction of the cylindrical member. The auxiliary fan is in the discharge flow path and is configured to suck some of the air discharged through the discharge port into the guide flow path. The guide flow path returns the air sucked by the auxiliary fan to the auxiliary fan.

公开(公告)号：US20250142967A1

公开(公告)日：2025-05-01

申请号：US18914400

申请日：2024-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： LUHING HU ,  Sangwon KIM ,  Joonseok Kim ,  Joonyun Kim ,  JUNHEE CHOI

IPC: H01L27/12 ,  H01L25/065 ,  H01L27/15

Abstract: A display panel includes a substrate, a gate electrode disposed on the substrate, a two-dimensional semiconductor material layer overlapping the gate electrode, a source electrode and a drain electrode electrically connected to the two-dimensional semiconductor material layer, a first electrode of a micro light-emitting diode electrically connected to the drain electrode, an active layer electrically connected to the first electrode of the micro light-emitting diode, where the active layer includes a quantum well layer surrounded by an ion-doped insulating partition, and a second electrode of the micro light-emitting diode electrically connected to the active layer.

公开(公告)号：US20250142894A1

公开(公告)日：2025-05-01

申请号：US18752024

申请日：2024-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Huije RYU ,  Junyoung KWON ,  Changhyun KIM ,  Minsu SEOL

IPC: H01L29/786 ,  H01L21/3115 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

Abstract: A semiconductor device may include a two-dimensional (2D) material layer extending in a first direction, a source electrode and a drain electrode each electrically connected to the 2D material layer, an insulating layer arranged on the 2D material layer, and a gate electrode arranged apart from the 2D material layer in a second direction perpendicular to the first direction, wherein the insulating layer includes a dopant.

公开(公告)号：US20250142823A1

公开(公告)日：2025-05-01

申请号：US18755840

申请日：2024-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Geunwon Lim ,  Youngho Kwon ,  Chungjin Kim ,  Jungho Lee ,  Yunkyu Jung

IPC: H10B43/27 ,  H10B41/27 ,  H10B41/41 ,  H10B43/40

Abstract: A semiconductor device may include a plate layer, gate electrodes spaced apart from each other in a first direction perpendicular to an upper surface of the plate layer on the plate layer, extending to different lengths in a second direction perpendicular to the first direction and forming step regions, channel structures penetrating through the gate electrodes, extending in the first direction, and each including a channel layer, isolation regions penetrating through the gate electrodes and extending in the first direction and the second direction, sacrificial insulating layers on the same levels as levels of the gate electrodes, respectively, a through-via penetrating through the sacrificial insulating layers and extending in the first direction, a dam structure surrounding the through-via, and a guard structure spaced apart from the dam structure horizontally and having a closed loop shape surrounding the dam structure on a plan view.

公开(公告)号：US20250142812A1

公开(公告)日：2025-05-01

申请号：US18896219

申请日：2024-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suyoun Song ,  Jamin Koo ,  Beomseo Kim ,  Jonghyeok Kim ,  Daeyoung Moon ,  Changwoo Seo ,  Wonseok Yoo ,  Chunhyung Chung

IPC: H10B12/00 ,  H01L29/423

Abstract: A semiconductor device includes a substrate including a first active region, a bit line on the substrate to cross the first active region, a bit line contact between the bit line and the first active region and in a bit line contact hole extending into the substrate, a bit line contact spacer on a sidewall of the bit line contact within the bit line contact hole, a bit line spacer on a sidewall of the bit line, an anti-oxidation layer between the sidewall of the bit line and the bit line spacer and between the sidewall of the bit line contact and the bit line spacer, and a buried contact in a buried contact hole, passing through the bit line contact spacer, and contacting the first active region, in which the anti-oxidation layer includes a silicon-containing material including SiOx, where 0

公开(公告)号：US20250142809A1

公开(公告)日：2025-05-01

申请号：US18760232

申请日：2024-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kangin Kim ,  Kyounghwan Kim

IPC: H10B12/00

Abstract: A semiconductor device includes a gate trench extending in a first direction on a substrate, first active fins protruding from a bottom of the gate trench, an upper surface of each of the first active fins having a first vertical level, a second active fin in the gate trench, an upper surface of the second active fin having a second vertical level higher than the first vertical level, and a gate structure on an isolation pattern filling the gate trench. A first portion of the gate structure overlapping with upper portions of the first active fins includes a first electrode. A second portion of the gate structure overlapping an upper portion of the second active fin includes a second electrode. A vertical height of the second electrode is greater than a vertical height of the first electrode.