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    Long wavelength avalanche photodetector
    61.
    发明授权
    Long wavelength avalanche photodetector 失效
    长波长雪崩光电探测器

    公开(公告)号：US4473835A

    公开(公告)日：1984-09-25

    申请号：US275346

    申请日：1981-06-19

    Applicant: Stephen R. Forrest ,  Ock-Ky Kim ,  Richard G. Smith

    Inventor： Stephen R. Forrest ,  Ock-Ky Kim ,  Richard G. Smith

    IPC: H01L31/107 ,  H01L27/14 ,  H01L29/161 ,  H01L29/90

    CPC classification number: H01L31/1075

    Abstract: An avalanche photodetector useful at wavelengths as long as 1.7 microns with low noise is achieved. The crystal used includes successive layers of p-type indium phosphide, n-type indium phosphide, and n-type indium gallium arsenide. An appropriate total of fixed charges in the n-type indium phosphide and a graded bandgap heterointerface region are important for the improved results.

    Abstract translation: 实现了在具有低噪声的波长长达1.7微米的情况下可用的雪崩光电探测器。 所使用的晶体包括p型磷化铟，n型磷化铟和n型砷化铟镓的连续层。 在n型磷化铟和梯度带隙异质界面区域中适当的固定电荷总量对于改进的结果是重要的。

    Electrochemical photoetching of compound semiconductors
    62.
    发明授权
    Electrochemical photoetching of compound semiconductors 失效
    化学半导体的电化学光刻

    公开(公告)号：US4414066A

    公开(公告)日：1983-11-08

    申请号：US416472

    申请日：1982-09-10

    Applicant: Stephen R. Forrest ,  Paul A. Kohl ,  Richard L. Panock

    Inventor： Stephen R. Forrest ,  Paul A. Kohl ,  Richard L. Panock

    IPC: C25F3/12 ,  H01L21/3063 ,  H01L21/465 ,  H01L21/467

    CPC classification number: H01L21/467 ,  C25F3/12 ,  H01L21/30635 ,  H01L21/465

    Abstract: A procedure is described for electrochemically photoetching n-type and intrinsic compound semiconductors. The process involves applying a potential to the compound semiconductor while it is in contact with an electrolytic solution and irradiating the surface to be etched with light in a certain energy range. By suitable adjustment in the potential, electrolytic solution composition and light energy, the etch rate is made proportional to the light intensity. By suitable variation in light intensity and light-ray direction, various geometrical features can be made on the surface of the compound semiconductor. For example, a hole with straight sides can be made in the compound semiconductor by use of a light spot and parallel (collimated) light rays. An advantageous application of this process is the fabrication of a photodiode with a hole in the center for use in bidirectional communication systems and to monitor power output for optical communication sources. The advantage of this process is that no damage occurs outside etched hole so that a maximum area of the photodiode remains active for detecting incoming radiation. Another advantage of the process is that etching will stop where the material becomes p-type so that etching can be made to stop automatically at a p/n junction.

    Abstract translation: 描述了用于电化学光刻n型和本征化合物半导体的方法。 该方法包括在化合物半导体与电解液接触的同时施加电位，并在一定的能量范围内用光照射被蚀刻的表面。 通过适当调整电位，电解液组成和光能，刻蚀速率与光强成正比。 通过适当的光强度和光线方向的变化，可以在化合物半导体的表面上形成各种几何特征。 例如，可以通过使用光点和平行（准直）光线在化合物半导体中制造具有直边的孔。 该方法的有利应用是制造在中心具有用于双向通信系统的孔的光电二极管，并监视光通信源的功率输出。 该方法的优点是在蚀刻孔外部不产生损伤，使得光电二极管的最大面积保持活跃以检测入射辐射。 该方法的另一个优点是，在材料变为p型的情况下，蚀刻将停止，使得蚀刻可以在p / n结处自动停止。

    Efficient solar cells using all-organic nanocrystalline networks
    63.
    发明授权
    Efficient solar cells using all-organic nanocrystalline networks 有权

    公开(公告)号：US11031567B2

    公开(公告)日：2021-06-08

    申请号：US11880210

    申请日：2007-07-19

    Applicant: Kai Sun ,  Fan Yang ,  Stephen R. Forrest

    Inventor： Kai Sun ,  Fan Yang ,  Stephen R. Forrest

    IPC: H01L51/42 ,  B82Y10/00 ,  H01L51/00 ,  H01L27/30

    Abstract: An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer; depositing a layer of a second organic semiconductor material on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; and depositing the first organic semiconductor material on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed. The depositing of the first and second organic semiconductor materials are alternated a number of times until a final layer of the second organic material is added to form a continuous layer. A second electrode is deposited over this final layer. One of the first electrode and the second electrode is transparent, and the first organic semiconductor material is one or more donor-type materials or one or more acceptor-type materials relative to second organic semiconductor material, which is one or more materials of the other material type.

    Focusing luminescent and thermal radiation concentrators
    64.
    发明授权
    Focusing luminescent and thermal radiation concentrators 有权
    聚焦发光和热辐射聚光器

    公开(公告)号：US09461193B2

    公开(公告)日：2016-10-04

    申请号：US13470938

    申请日：2012-05-14

    Applicant: Stephen R. Forrest ,  Noel C. Giebink

    Inventor： Stephen R. Forrest ,  Noel C. Giebink

    IPC: H01L31/055 ,  H01L31/054 ,  G01J1/04 ,  G01J1/42

    CPC classification number: H01L31/055 ,  G01J1/0422 ,  G01J1/0448 ,  G01J1/0488 ,  G01J1/4204 ,  G01J1/429 ,  H01L31/0543 ,  H01L31/0549 ,  Y02E10/52

    Abstract: The present disclosure relates to focusing luminescent concentrators wherein directional emission, obtained by placing an absorber/emitter within a microcavity or photonic crystal, may be oriented by a macroscopic concentrator and focused to a point or line for 3D or 2D concentration, respectively. The focusing luminescent concentrators disclosed herein may provide high concentration ratios without the need for tracking, and may reduce re-absorption losses associated with conventional concentrators. The present disclosure further relates to photovoltaic cells and/or optical detector devices comprising a focusing luminescent concentrator. The devices and methods presently disclosed are also useful, for example, in solar, thermal and thermophotovolatic applications.

    Abstract translation: 本公开涉及聚焦发光聚光器，其中通过将吸收器/发射器放置在微腔或光子晶体内而获得的定向发射可以分别由宏观聚光器定向并聚焦到用于3D或2D浓度的点或线。 本文公开的聚焦发光集中器可以提供高浓度比，而不需要跟踪，并且可以减少与常规浓缩器相关联的再吸收损失。 本公开还涉及包括聚焦发光聚光器的光伏电池和/或光学检测器装置。 目前公开的装置和方法在例如太阳能，热能和热光照应用中也是有用的。

    Light trapping architecture for photovoltaic and photodector applications
    66.
    发明授权
    Light trapping architecture for photovoltaic and photodector applications 有权
    用于光伏和光电二极管应用的光捕获架构

    公开(公告)号：US09412960B2

    公开(公告)日：2016-08-09

    申请号：US13099850

    申请日：2011-05-03

    Applicant: Stephen R. Forrest ,  Richard R. Lunt ,  Michael Slootsky

    Inventor： Stephen R. Forrest ,  Richard R. Lunt ,  Michael Slootsky

    IPC: H01L31/00 ,  H01L51/44 ,  G02B5/08 ,  H01L31/054 ,  H01L31/0232 ,  H01L51/42

    CPC classification number: H01L51/447 ,  G02B5/0808 ,  H01L31/0232 ,  H01L31/0543 ,  H01L31/0547 ,  H01L51/4246 ,  Y02E10/52 ,  Y02E10/549

    Abstract: There is disclosed photovoltaic device structures which trap admitted light and recycle it through the contained photosensitive materials to maximize photoabsorption. For example, there is disclosed a photosensitive optoelectronic device comprising: a first reflective layer comprising a thermoplastic resin; a second reflective layer substantially parallel to the first reflective layer; a first transparent electrode layer on at least one of the first and second reflective layer; and a photosensitive region adjacent to the first electrode, wherein the first transparent electrode layer is substantially parallel to the first reflective layer and adjacent to the photosensitive region, and wherein the device has an exterior face transverse to the planes of the reflective layers where the exterior face has an aperture for admission of incident radiation to the interior of the device.

    Abstract translation: 公开了光伏器件结构，其捕获入射光并通过所含的感光材料再循环它，以使光吸收最大化。 例如，公开了光敏光电器件，其包括：包含热塑性树脂的第一反射层; 基本上平行于第一反射层的第二反射层; 在所述第一和第二反射层中的至少一个上的第一透明电极层; 以及与所述第一电极相邻的感光区域，其中所述第一透明电极层基本上平行于所述第一反射层并且邻近所述感光区域，并且其中所述器件具有横向于所述反射层的平面的外表面， 面具有用于入射到设备内部的入射辐射的孔。

    GAS CUSHION CONTROL OF OVJP PRINT HEAD POSITION
    69.
    发明申请
    GAS CUSHION CONTROL OF OVJP PRINT HEAD POSITION 有权
    OVJP打印头位置的气囊控制

    公开(公告)号：US20130208036A1

    公开(公告)日：2013-08-15

    申请号：US13807878

    申请日：2011-07-01

    Applicant: Stephen R. Forrest

    Inventor： Stephen R. Forrest

    IPC: B41J11/00

    CPC classification number: B41J11/008 ,  B41J25/308 ,  B41J25/3082

    Abstract: An OVJP apparatus and method for applying organic vapor or other flowable material to a substrate using a printing head mechanism in which the print head spacing from the substrate is controllable using a cushion of air or other gas applied between the print head and substrate. The print head is mounted for translational movement towards and away from the substrate and is biased toward the substrate by springs or other means. A gas cushion feed assembly supplies a gas under pressure between the print head and substrate which opposes the biasing of the print head toward the substrate so as to form a space between the print head and substrate. By controlling the pressure of gas supplied, the print head separation from the substrate can be precisely controlled.

    Abstract translation: 一种用于使用打印头机构将有机蒸汽或其它可流动材料施加到基板的OVJP装置和方法，其中使用施加在打印头和基板之间的空气或其它气体的衬垫可控制与基板的打印头间隔。 打印头被安装成朝向和离开基板的平移运动，并且通过弹簧或其他方式偏压到基板。 气垫进料组件在打印头和衬底之间的压力下供应气体，该气体与衬底的打印头的偏置相对，从而在打印头和衬底之间形成空间。 通过控制供应气体的压力，可以精确地控制与基板的打印头分离。

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