公开(公告)号：US20090169930A1

公开(公告)日：2009-07-02

申请号：US12067086

申请日：2007-05-23

Applicant: Sung-Jin Oh ,  Kyoung-Hwang Lee ,  Seung-Ho Baek ,  Sung-Hoon Lee ,  Il-Tae Park ,  Byung-Sun Hong ,  Mee-Nam Shinn

Inventor： Sung-Jin Oh ,  Kyoung-Hwang Lee ,  Seung-Ho Baek ,  Sung-Hoon Lee ,  Il-Tae Park ,  Byung-Sun Hong ,  Mee-Nam Shinn

IPC: H01M2/14 ,  H01M8/04

CPC classification number: H01M8/0263 ,  H01M8/0258 ,  H01M8/0267 ,  H01M8/04029 ,  H01M8/04067 ,  H01M8/04089 ,  H01M8/04201 ,  H01M8/04529 ,  H01M8/04679 ,  H01M8/04753 ,  H01M8/1004 ,  H01M8/1039 ,  H01M8/241 ,  H01M8/2457 ,  H01M8/2483 ,  H01M8/2484 ,  H01M8/2485 ,  H01M2008/1095 ,  H01M2300/0082 ,  Y02E60/50

Abstract: A fuel cell separator, a fuel cell stack having the fuel cell separator, and a reactant gas control method of the fuel cell stack are provided. That is, even when the fuel cell stack operates under the low load operation condition, a reactant gas is supplied to the reactant gas passages of the fuel cell separator, and thus, the length of the passage can be shortened by 50% as compared with the prior art having only one reactant gas passage. Therefore, the reactant gas can be effectively supplied without experiencing pressure loss. Further, in the high load operation of the fuel cell stack, the reactant gas is introduced into the first reactant gas passage of the fuel cell separator and utilized in half of the whole electrode area. Subsequently, the reactant gas is introduced into the second reactant gas passage and utilized in the remaining half of the electrode area. The flow rate of the reactant gas flowing along the passage channels is increased by two times, even when the reactant gas utilizing rate is identical as compared with the reactant gas flow in the low load operation. As a result, the moisture existing in the passage channels can be more effectively discharged and the flooding phenomenon occurring in the high load operation can be prevented. By controlling the reactant gas supply in accordance with an operation condition of the fuel cell stack without experiencing pressure loss and deterioration of the utilizing rate, the flooding phenomenon and concentration polarization phenomenon that occur in the fuel cell stack can be prevented.

Abstract translation: 提供燃料电池隔板，具有燃料电池隔板的燃料电池堆和燃料电池堆的反应气体控制方法。 也就是说，即使燃料电池堆在低负载运转条件下运转，向燃料电池用隔板的反应气体通路供给反应气体，因此与通常的通路长度相比可以缩短50％ 现有技术仅具有一个反应气体通道。 因此，能够有效地供给反应气体而不会发生压力损失。 此外，在燃料电池堆的高负荷运转中，将反应气体导入燃料电池用隔板的第一反应气体通路，并用于整个电极区域的一半。 随后，反应气体被引入到第二反应气体通道中，并用于电极区域的剩余部分。 即使反应物气体的利用率与低负荷运转中的反应气体流量相同，流过通道的反应气体的流量增加了两倍。 结果，可以更有效地排出存在于通道通道中的水分，并且可以防止在高负载操作中发生的溢流现象。 通过根据燃料电池堆的操作条件控制反应气体的供给而不会发生压力损失和利用率的劣化，可以防止在燃料电池堆中发生的溢流现象和浓缩极化现象。

公开(公告)号：US20090146560A1

公开(公告)日：2009-06-11

申请号：US12292848

申请日：2008-11-26

Applicant: Mu-gyeom Kim ,  Sang-yeol Kim ,  Sung-hoon Lee ,  Jung-bae Song

Inventor： Mu-gyeom Kim ,  Sang-yeol Kim ,  Sung-hoon Lee ,  Jung-bae Song

IPC: H01J1/62

CPC classification number: H05B33/14 ,  H01L51/5036 ,  H01L51/5048 ,  H01L51/5265

Abstract: A white organic light emitting device (WOLED) includes electroluminescence (EL) red and blue light emitting layers disposed inside a cavity and a non-electroluminescence (NEL) green light emitting unit disposed outside the cavity or on a region inside the cavity where there are no combinations of electrons and holes. The green light emitting unit adjusts a green spectrum by resonating greenish blue light in the cavity, or is disposed on a path through which red and blue light output from the cavity travels and adapted to absorb the blue light and emit green light. A photoeluminescence (PL) light emitting layer may be a capping layer covering the cavity. The capping layer functions as an optical path control layer controlling an optical path. A white spectrum is obtained by combining blue light and red light generated by EL and green generated by PL. This WOLED can operate at a low voltage.

Abstract translation: 白色有机发光器件（WOLED）包括设置在空腔内的电致发光（EL）红色和蓝色发光层，以及设置在空腔外部或空腔内部的区域内的非电致发光（NEL）绿色发光单元 没有电子和空穴的组合。 绿色发光单元通过使空腔中的绿色蓝色光共振而调节绿色光谱，或者设置在从空腔输出的红色和蓝色光通过的路径上，适于吸收蓝色光并发出绿色光。 光致发光（PL）发光层可以是覆盖空腔的覆盖层。 封盖层用作控制光路的光路控制层。 通过组合蓝色光和由EL产生的红色光和由PL生成的绿色获得白色光谱。 该WOLED可以在低电压下工作。

公开(公告)号：US20090121267A1

公开(公告)日：2009-05-14

申请号：US12081283

申请日：2008-04-14

Applicant: Ki-ha Hong ,  Sung-hoon Lee ,  Jong-seob Kim ,  Jai kwang Shin

Inventor： Ki-ha Hong ,  Sung-hoon Lee ,  Jong-seob Kim ,  Jai kwang Shin

IPC: H01L29/82

CPC classification number: H01L29/66984 ,  B82Y25/00 ,  H01F1/401 ,  H01F1/404 ,  H01F10/1933 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3295 ,  H01L29/82

Abstract: A spin field effect transistor may include at least one gate electrode, a channel layer, a first stack and a second stack separate from each other on a substrate, wherein the channel layer is formed of a half metal. The half metal may be at least one material selected from the group consisting of chrome oxide (CrO2), magnetite (Fe3O4), a double perovskite structure material, a Heusler alloy, NiMnSb, La(1-x)AxMnO3 (A=Ca, Ba, Sr, x˜0.3), and GaN doped with Cu, and the double perovskite structure material is expressed as a chemical composition of A2BB′O6, and a material corresponding to A is Ca, Sr, or Ba, a material corresponding to B is a 3d orbital transition metal, and a material corresponding to B′ is a 4d orbital transition metal. The 3d orbital transition metal may be Fe or Co, and the 4d orbital transition metal is Mo or Re.

Abstract translation: 自旋场效应晶体管可以包括在基板上彼此分离的至少一个栅电极，沟道层，第一堆叠和第二堆叠，其中沟道层由半金属形成。 半金属可以是选自氧化铬（CrO 2），磁铁矿（Fe 3 O 4），双钙钛矿结构材料，Heusler合金，NiMnSb，La（1-x）AxMnO 3（A = Ca， Ba，Sr，x〜0.3）和掺杂有Cu的GaN，双钙钛矿结构材料表示为A2BB'O6的化学组成，对应于A的材料为Ca，Sr或Ba，与 B是3d轨道过渡金属，对应于B'的材料是4d轨道过渡金属。 3d轨道过渡金属可以是Fe或Co，4d轨道过渡金属是Mo或Re。

公开(公告)号：US20090091255A1

公开(公告)日：2009-04-09

申请号：US12285559

申请日：2008-10-08

Applicant: Sung-Hoon Lee ,  Sang-Yeol Kim ,  Mu-Gyeom Kim ,  Jung-Bae Song

Inventor： Sung-Hoon Lee ,  Sang-Yeol Kim ,  Mu-Gyeom Kim ,  Jung-Bae Song

IPC: H01J1/62

CPC classification number: H01L51/5036 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/5016 ,  H01L2251/552

Abstract: A white organic light emitting device (OLED) includes an anode, a first phosphorescent layer including a first host material and a first dopant disposed on the anode, a blue fluorescence layer including a blue host material and a blue dopant disposed on the first phosphorescent layer, and a second phosphorescent layer including a second host material and a second dopant disposed on the blue fluorescence layer. In addition, a triplet energy of the blue host material of the blue fluorescence layer is greater than both of a triplet energy of the first dopant of the first phosphorescent layer and a triplet energy of the second dopant of the second phosphorescent layer.

Abstract translation: 白色有机发光器件（OLED）包括阳极，包括第一主体材料的第一磷光层和设置在阳极上的第一掺杂物，蓝色荧光层，其包括布置在第一磷光层上的蓝色主体材料和蓝色掺杂物 以及第二磷光层，其包括设置在蓝色荧光层上的第二主体材料和第二掺杂物。 此外，蓝色荧光层的蓝色主体材料的三线态能量大于第一磷光层的第一掺杂物的三线态能量和第二磷光层的第二掺杂剂的三线态能量的三重态能量。

公开(公告)号：US20090021988A1

公开(公告)日：2009-01-22

申请号：US12010706

申请日：2008-01-29

Applicant: Ki-ha Hong ,  Sung-hoon Lee ,  Jae-woong Hyun ,  Jai-kwang Shin ,  Young-gu Jin ,  Sung-il Park ,  Jong-seob Kim

Inventor： Ki-ha Hong ,  Sung-hoon Lee ,  Jae-woong Hyun ,  Jai-kwang Shin ,  Young-gu Jin ,  Sung-il Park ,  Jong-seob Kim

IPC: G11C16/06

CPC classification number: G11C16/16 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

Abstract: Provided is a method of reliably operating a highly integratable nonvolatile memory device. The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line. In the nonvolatile memory device, data may be erased from the memory transistors by applying an erasing voltage to the bit line or the common source line.

Abstract translation: 提供了可靠地操作高度可积分的非易失性存储器件的方法。 非易失性存储器件可以包括串选择晶体管，多个存储晶体管和位线和公共源极线之间的接地选择晶体管。 在非易失性存储器件中，通过向位线或公共源极线施加擦除电压，可以从存储晶体管擦除数据。

公开(公告)号：US20080285353A1

公开(公告)日：2008-11-20

申请号：US12073681

申请日：2008-03-07

Applicant: Sung-II Park ,  Sung-Hoon Lee ,  Kwang-Soo Seol ,  Young-Gu Jin ,  Jong-Seob Kim

Inventor： Sung-II Park ,  Sung-Hoon Lee ,  Kwang-Soo Seol ,  Young-Gu Jin ,  Jong-Seob Kim

IPC: G11C16/06 ,  H01L29/788 ,  H01L21/336

CPC classification number: H01L21/28282 ,  G11C16/349 ,  H01L27/11568 ,  H01L29/42332 ,  H01L29/42336 ,  H01L29/42348 ,  H01L29/42352 ,  H01L29/66833 ,  H01L29/792

Abstract: Provided are a memory device, a method of manufacturing the same, and a method of operating the same. The memory device may include a channel region having an upper end where both sides of the upper end are curved, the curved portions of both sides allowing charges to be injected thereinto in a program or erase voltage such that the curved portions into which the charges are injected are separate from a portion which determines a threshold voltage, and a gate structure on the channel region.

Abstract translation: 提供了一种存储器件及其制造方法及其操作方法。 存储器件可以包括具有上端的上端弯曲的上端的通道区域，两侧的弯曲部分允许以编程或擦除电压将电荷注入其中，使得电荷的弯曲部分 注入与确定阈值电压的部分和沟道区上的栅极结构分开。

公开(公告)号：US07435996B2

公开(公告)日：2008-10-14

申请号：US11100377

申请日：2005-04-07

Applicant: Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

Inventor： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

IPC: H01L33/00 ,  H01L51/50

CPC classification number: H01L33/24 ,  B82Y20/00 ,  H01L33/08 ,  H01L33/38 ,  H01L51/0038 ,  H01L51/502 ,  H01L51/5032 ,  H01L2251/303

Abstract: A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer formed on a substrate, a plurality of nanowires vertically formed on the first conductive layer, each of the nanowires having an n-type doped portion and a p-type doped portion, a light emitting layer between the n-type doped portion and the p-type doped portion, first and second conductive organic polymers filling a space corresponding to the p-type doped portion and the n-type doped portion, respectively, and a second conductive layer formed on the nanowires. The organic polymers dope the corresponding surface of the nanowires by receiving electrons from the corresponding surface of the nanowires or by providing electrons to the surface of the nanowires.

Abstract translation: 提供一种纳米线发光器件及其制造方法。 纳米线发光器件包括形成在衬底上的第一导电层，垂直形成在第一导电层上的多个纳米线，每个纳米线具有n型掺杂部分和p型掺杂部分，发光层 在n型掺杂部分和p型掺杂部分之间，分别填充与p型掺杂部分和n型掺杂部分相对应的空间的第一和第二导电有机聚合物和形成在p型掺杂部分上的第二导电层 纳米线 有机聚合物通过从纳米线的相应表面接收电子或通过向纳米线的表面提供电子来掺杂纳米线的相应表面。

公开(公告)号：US20080205157A1

公开(公告)日：2008-08-28

申请号：US12071961

申请日：2008-02-28

Applicant: Kwang-soo Seol ,  Sang-jin Park ,  Sung-hoon Lee ,  Sung-il Park ,  Jong-seob Kim

Inventor： Kwang-soo Seol ,  Sang-jin Park ,  Sung-hoon Lee ,  Sung-il Park ,  Jong-seob Kim

IPC: G11C16/06

CPC classification number: G11C16/349

Abstract: Provided is a method of operating a nonvolatile memory device to perform a programming operation or an erase operation. The method includes applying a composite pulse including a direct current (DC) pulse and an AC perturbation pulse to the nonvolatile memory device to perform the programming operation or the erase operation.

Abstract translation: 提供了一种操作非易失性存储器件以执行编程操作或擦除操作的方法。 该方法包括将包括直流（DC）脉冲和AC扰动脉冲的复合脉冲施加到非易失性存储器件以执行编程操作或擦除操作。

公开(公告)号：US07381652B2

公开(公告)日：2008-06-03

申请号：US11605128

申请日：2006-11-28

Applicant: Sung Hoon Lee

Inventor： Sung Hoon Lee

IPC: H01L21/302

CPC classification number: H01L27/115 ,  H01L27/11517 ,  H01L27/11519 ,  H01L27/11565

Abstract: A method of manufacturing a flash memory device which an etch-prevention layer, first and second interlayer insulating layers, and first, second and third hard mask layers are sequentially formed on a semiconductor substrate. The third hard mask layer is etched to expose a portion of a region on the second hard mask layer. A photoresist pattern of a line shape is formed on the entire surface such that the photoresist pattern is exposed to be narrower than the region through which the second hard mask layer is exposed. The second hard mask layer is etched using the photoresist pattern as a mask. The first hard mask layer is etched using the photoresist pattern as a mask, and the second and first interlayer insulating layers are then etched using the remaining third and second hard mask layers as masks, thus forming a drain contact hole having a square shape. The etch-prevention layer is etched using the remaining second and first hard mask layers as masks, thereby exposing a predetermined region of the semiconductor substrate and opening the drain contact hole. It is thus possible to improve a bridge occurring between the contacts.

Abstract translation: 一种在半导体衬底上依次形成防蚀层，第一和第二层间绝缘层以及第一，第二和第三硬掩模层的闪速存储器件的制造方法。 蚀刻第三硬掩模层以暴露第二硬掩模层上的区域的一部分。 在整个表面上形成线形的光致抗蚀剂图案，使得光致抗蚀剂图案暴露于比第二硬掩模层暴露的区域窄。 使用光致抗蚀剂图案作为掩模蚀刻第二硬掩模层。 使用光致抗蚀剂图案作为掩模蚀刻第一硬掩模层，然后使用剩余的第三和第二硬掩模层作为掩模来蚀刻第二和第一层间绝缘层，从而形成具有正方形形状的漏极接触孔。 使用剩余的第二和第一硬掩模层作为掩模蚀刻防蚀层，从而暴露半导体衬底的预定区域并打开漏极接触孔。 因此可以改善在触点之间发生的桥。

公开(公告)号：US20080032506A1

公开(公告)日：2008-02-07

申请号：US11751734

申请日：2007-05-22

Applicant: Sung Hoon Lee

Inventor： Sung Hoon Lee

IPC: H01L21/033

CPC classification number: H01L21/0337 ,  H01L21/0338

Abstract: A method of forming a mask pattern and, more particularly, a method of forming a mask pattern wherein micro patterns having resolutions lower than those of exposure equipment by overcoming the resolutions of the exposure equipment, wherein, a silicon layer is formed over a substrate and is patterned. The patterned silicon layer is oxidized to form the entire surface of the silicon layer to a specific thickness by using an oxide layer. The oxide layer is removed to expose a top surface of the silicon layer. A mask pattern is formed with the remaining oxide layer by removing the silicon layer.

Abstract translation: 更具体地说，一种形成掩模图案的方法，其中通过克服曝光设备的分辨率，其中分辨率低于曝光设备的分辨率的微图案，其中在衬底上形成硅层， 是图案。 通过使用氧化物层，图案化硅层被氧化以形成硅层的整个表面至特定厚度。 去除氧化物层以暴露硅层的顶表面。 通过去除硅层而形成具有剩余氧化物层的掩模图案。