公开(公告)号：US07919786B2

公开(公告)日：2011-04-05

申请号：US12040686

申请日：2008-02-29

申请人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

发明人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  B82Y10/00 ,  H01L33/06 ,  H01L33/18 ,  Y10S977/762

摘要： A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material.

摘要翻译： 提供了一种纳米线发光器件。 纳米线发光器件包括衬底，在衬底上形成的第一导电层，垂直形成在第一导电层上的多个纳米线，每个纳米线包括p掺杂部分和n掺杂部分， p掺杂部分和n掺杂部分，形成在纳米线上的第二导电层和其中嵌入发光材料的绝缘聚合物，填充纳米线之间的空间。 从发光层发出的光的颜色根据发光材料而变化。

公开(公告)号：US07435996B2

公开(公告)日：2008-10-14

申请号：US11100377

申请日：2005-04-07

申请人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

发明人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

IPC分类号： H01L33/00 ,  H01L51/50

CPC分类号： H01L33/24 ,  B82Y20/00 ,  H01L33/08 ,  H01L33/38 ,  H01L51/0038 ,  H01L51/502 ,  H01L51/5032 ,  H01L2251/303

摘要： A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer formed on a substrate, a plurality of nanowires vertically formed on the first conductive layer, each of the nanowires having an n-type doped portion and a p-type doped portion, a light emitting layer between the n-type doped portion and the p-type doped portion, first and second conductive organic polymers filling a space corresponding to the p-type doped portion and the n-type doped portion, respectively, and a second conductive layer formed on the nanowires. The organic polymers dope the corresponding surface of the nanowires by receiving electrons from the corresponding surface of the nanowires or by providing electrons to the surface of the nanowires.

摘要翻译： 提供一种纳米线发光器件及其制造方法。 纳米线发光器件包括形成在衬底上的第一导电层，垂直形成在第一导电层上的多个纳米线，每个纳米线具有n型掺杂部分和p型掺杂部分，发光层 在n型掺杂部分和p型掺杂部分之间，分别填充与p型掺杂部分和n型掺杂部分相对应的空间的第一和第二导电有机聚合物和形成在p型掺杂部分上的第二导电层 纳米线 有机聚合物通过从纳米线的相应表面接收电子或通过向纳米线的表面提供电子来掺杂纳米线的相应表面。

公开(公告)号：US20090008664A1

公开(公告)日：2009-01-08

申请号：US12040686

申请日：2008-02-29

申请人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

发明人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  B82Y10/00 ,  H01L33/06 ,  H01L33/18 ,  Y10S977/762

摘要： A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material.

摘要翻译： 提供了一种纳米线发光器件。 纳米线发光器件包括衬底，形成在衬底上的第一导电层，垂直形成在第一导电层上的多个纳米线，每个纳米线包括p掺杂部分和n掺杂部分， p掺杂部分和n掺杂部分，形成在纳米线上的第二导电层和其中嵌入发光材料的绝缘聚合物，填充纳米线之间的空间。 从发光层发出的光的颜色根据发光材料而变化。

公开(公告)号：US07453097B2

公开(公告)日：2008-11-18

申请号：US11100376

申请日：2005-04-07

申请人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

发明人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

IPC分类号： H01L33/00 ,  H01L51/50

CPC分类号： H01L33/24 ,  B82Y20/00 ,  H01L33/08 ,  H01L33/18

摘要： A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer on a substrate, a plurality of nanowires on the first conductive layer, each nanowire having a p-type doped portion and an n-type doped portion on both ends, a light emitting layer between the p-type doped portion and n-type doped portion, and a second conductive layer formed on the nanowires. The doped portions are formed by adsorbing molecules around a circumference thereof.

摘要翻译： 提供一种纳米线发光器件及其制造方法。 纳米线发光器件包括在衬底上的第一导电层，第一导电层上的多个纳米线，每个纳米线具有p型掺杂部分和两端的n型掺杂部分， p型掺杂部分和n型掺杂部分，以及形成在纳米线上的第二导电层。 掺杂部分通过在其圆周附近吸附分子而形成。

公开(公告)号：US20050227391A1

公开(公告)日：2005-10-13

申请号：US11100377

申请日：2005-04-07

申请人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

发明人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

IPC分类号： H05B33/00 ,  C09K11/00 ,  C09K11/54 ,  H01L21/00 ,  H01L21/22 ,  H01L21/38 ,  H01L33/26 ,  H01L51/00 ,  H01L51/30

CPC分类号： H01L33/24 ,  B82Y20/00 ,  H01L33/08 ,  H01L33/38 ,  H01L51/0038 ,  H01L51/502 ,  H01L51/5032 ,  H01L2251/303

摘要： A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer formed on a substrate, a plurality of nanowires vertically formed on the first conductive layer, each of the nanowires having an n-type doped portion and a p-type doped portion, a light emitting layer between the n-type doped portion and the p-type doped portion, first and second conductive organic polymers filling a space corresponding to the p-type doped portion and the n-type doped portion, respectively, and a second conductive layer formed on the nanowires. The organic polymers dope the corresponding surface of the nanowires by receiving electrons from the corresponding surface of the nanowires or by providing electrons to the surface of the nanowires.

摘要翻译： 提供一种纳米线发光器件及其制造方法。 纳米线发光器件包括形成在衬底上的第一导电层，垂直形成在第一导电层上的多个纳米线，每个纳米线具有n型掺杂部分和p型掺杂部分，发光层 在n型掺杂部分和p型掺杂部分之间，分别填充与p型掺杂部分和n型掺杂部分相对应的空间的第一和第二导电有机聚合物和形成在p型掺杂部分上的第二导电层 纳米线 有机聚合物通过从纳米线的相应表面接收电子或通过向纳米线的表面提供电子来掺杂纳米线的相应表面。

公开(公告)号：US20050224780A1

公开(公告)日：2005-10-13

申请号：US11100455

申请日：2005-04-07

申请人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

发明人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

IPC分类号： H01L29/06 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18

CPC分类号： H01L33/08 ,  B82Y10/00 ,  H01L33/06 ,  H01L33/18 ,  Y10S977/762

摘要： A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material.

摘要翻译： 提供了一种纳米线发光器件。 纳米线发光器件包括衬底，形成在衬底上的第一导电层，垂直形成在第一导电层上的多个纳米线，每个纳米线包括p掺杂部分和n掺杂部分， p掺杂部分和n掺杂部分，形成在纳米线上的第二导电层和其中嵌入发光材料的绝缘聚合物，填充纳米线之间的空间。 从发光层发出的光的颜色根据发光材料而变化。

公开(公告)号：US20060252171A1

公开(公告)日：2006-11-09

申请号：US11350751

申请日：2006-02-10

申请人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

发明人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

IPC分类号： H01L21/00 ,  A61B1/04 ,  H04N7/18

CPC分类号： H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

公开(公告)号：US08354286B2

公开(公告)日：2013-01-15

申请号：US10758136

申请日：2004-01-16

申请人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

发明人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

IPC分类号： H01L21/00

CPC分类号： H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

摘要翻译： 提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。 该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在 具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。 硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。 此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。

公开(公告)号：US20120161159A9

公开(公告)日：2012-06-28

申请号：US10758136

申请日：2004-01-16

申请人： Eun-Kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

发明人： Eun-Kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

IPC分类号： H01L21/00 ,  H01L27/15 ,  H01L33/00 ,  H01L31/12

CPC分类号： H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

摘要翻译： 提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。 该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在 具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。 硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。 此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。

公开(公告)号：US09144962B2

公开(公告)日：2015-09-29

申请号：US13094154

申请日：2011-04-26

申请人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Choong-ho Yu

发明人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Choong-ho Yu

IPC分类号： B32B3/00 ,  B32B37/02 ,  B32B37/24 ,  B32B9/00 ,  B32B27/06 ,  B82Y30/00 ,  H01B1/04

CPC分类号： B32B37/24 ,  B32B9/007 ,  B32B27/06 ,  B32B2037/243 ,  B32B2037/246 ,  B32B2309/02 ,  B32B2309/105 ,  B32B2457/00 ,  B82Y30/00 ,  H01B1/04 ,  Y10T156/10 ,  Y10T428/24355 ,  Y10T428/24802 ,  Y10T428/31855

摘要： A graphene-polymer layered composite and a method of manufacturing the same is provided. A graphene-polymer layered composite includes polymer layers surrounding a graphene sheet, and may include numerous polymer layers and graphene sheets in an alternating stacked configuration. The graphene-polymer layered composite has the characteristics of a polymer in that it provides flexibility, ease of manufacturing, low manufacturing costs, and low thermal conductivity. The graphene-polymer layered composite also has the characteristics of graphene in that it has a high electrical conductivity. Due to the low thermal conductivity and high electrical conductivity, the graphene-polymer layered composite may be useful for electrodes, electric devices, and thermoelectric materials.

摘要翻译： 提供了石墨烯 - 聚合物层状复合材料及其制造方法。 石墨烯 - 聚合物层状复合物包括围绕石墨烯片的聚合物层，并且可以包括交替堆叠构型的许多聚合物层和石墨烯片。 石墨烯 - 聚合物层状复合材料具有聚合物的特征，因为它提供了灵活性，易于制造，低制造成本和低热导率。 石墨烯聚合物层状复合材料也具有石墨烯的特征，因为其具有高导电性。 由于导热性低，导电性高，石墨烯 - 聚合物层状复合材料可用于电极，电子器件和热电材料。