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    Electrostatic filter providing reduced particle generation
    62.
    发明授权
    Electrostatic filter providing reduced particle generation 有权

    公开(公告)号：US11437215B2

    公开(公告)日：2022-09-06

    申请号：US16714097

    申请日：2019-12-13

    Applicant: APPLIED Materials, Inc.

    Inventor： Alexandre Likhanskii ,  Antonella Cucchetti ,  Eric D. Hermanson ,  Frank Sinclair ,  Jay T. Scheuer ,  Robert C. Lindberg

    IPC: H01J37/12 ,  H01J37/24 ,  H01J37/30 ,  H01L21/425 ,  H01J37/32 ,  H01J37/08

    Abstract: Provided herein are approaches for decreasing particle generation in an electrostatic lens. In some embodiments, an ion implantation system may include an electrostatic lens including an entrance for receiving an ion beam and an exit for delivering the ion beam towards a target, the electrostatic lens including a first terminal electrode, a first suppression electrode, and a first ground electrode disposed along a first side of an ion beamline, wherein the first ground electrode is grounded and positioned adjacent the exit. The electrostatic lens may further include a second terminal electrode, a second suppression electrode, and a second ground electrode disposed along a second side of the ion beamline, wherein the second ground electrode is grounded and positioned adjacent the exit. The implantation system may further include a power supply operable to supply a voltage and a current to the electrostatic lens for controlling the ion beam.

    In situ angle measurement using channeling
    63.
    发明授权
    In situ angle measurement using channeling 有权

    公开(公告)号：US11387073B2

    公开(公告)日：2022-07-12

    申请号：US16828218

    申请日：2020-03-24

    Applicant: Applied Materials, Inc.

    Inventor： Frank Sinclair ,  Jonathan Gerald England ,  Joseph C. Olson

    IPC: H01J37/244 ,  H01J37/20 ,  H01J37/317 ,  H01J37/141

    Abstract: A system and method that is capable of measuring the incident angle of an ion beam, especially an ion beam comprising heavier ions, is disclosed. In one embodiment, X-rays, rather than ions, are used to determine the channeling direction. In another embodiment, the workpiece is constructed, at least in part, of a material having a high molecular weight such that heaver ion beams can be measured. Further, in another embodiment, the parameters of the ion beam are measured across an entirety of the beam, allowing components of the ion implantation system to be further tuned to create a more uniform beam.

    System And Method For Improved Beam Current From An Ion Source
    68.
    发明申请
    System And Method For Improved Beam Current From An Ion Source 有权

    公开(公告)号：US20210066019A1

    公开(公告)日：2021-03-04

    申请号：US16734979

    申请日：2020-01-06

    Applicant: Applied Materials, Inc.

    Inventor： Shengwu Chang ,  Frank Sinclair ,  Michael St. Peter

    IPC: H01J37/08

    Abstract: An IHC ion source that employs a negatively biased cathode and one or more side electrodes is disclosed. The one or more side electrodes are biased using an electrode power supply, which supplies a voltage of between 0 and −50 volts, relative to the chamber. By adjusting the output from the electrode power supply, beam current can be optimized for different species. For example, certain species, such as arsenic, may be optimized when the side electrodes are at the same voltage as the chamber. Other species, such as boron, may be optimized when the side electrodes are at a negative voltage relative to the chamber. In certain embodiments, a controller is in communication with the electrode power supply so as to control the output of the electrode power supply, based on the desired feed gas.

    Apparatus and method for controlling ion beam using electrostatic filter
    69.
    发明授权
    Apparatus and method for controlling ion beam using electrostatic filter 有权

    公开(公告)号：US10937624B2

    公开(公告)日：2021-03-02

    申请号：US16197249

    申请日：2018-11-20

    Applicant: APPLIED Materials, Inc.

    Inventor： Alexandre Likhanskii ,  Frank Sinclair ,  Shengwu Chang

    IPC: H01J37/147 ,  H01J37/08 ,  H01J37/12 ,  H01J37/317

    Abstract: An apparatus is provided. The apparatus may include a main chamber, an entrance tunnel, the entrance tunnel having an entrance axis extending into the main chamber; an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween, and an electrode assembly, disposed in the main chamber, and defining a beam path between the entrance tunnel and the exit tunnel. The electrode assembly may include an upper electrode, disposed on a first side of the beam path, and a plurality of lower electrodes, disposed on a second side of the beam path, the plurality of lower electrodes comprising at least three electrodes.

    Low emission cladding and ion implanter
    70.
    发明授权
    Low emission cladding and ion implanter 有权

    公开(公告)号：US10811214B2

    公开(公告)日：2020-10-20

    申请号：US16415255

    申请日：2019-05-17

    Applicant: APPLIED Materials, Inc.

    Inventor： Julian G. Blake ,  Frank Sinclair

    IPC: H01J37/09 ,  H01J37/317

    Abstract: An ion implanter. The ion implanter may include a beamline, the beamline defining an inner wall, surrounding a cavity, the cavity arranged to conduct an ion beam. The ion implanter may also include a low emission insert, disposed on the inner wall, and further comprising a 12C layer, the 12C layer having an outer surface, facing the cavity.

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