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110 条记录 (耗时 0.03 秒)

    Tubing misload detection mechanism for an infusion pump
    61.
    发明授权
    Tubing misload detection mechanism for an infusion pump 有权
    用于输液泵的管道误动检测机构

    公开(公告)号：US08430654B2

    公开(公告)日：2013-04-30

    申请号：US12112126

    申请日：2008-04-30

    申请人： Takashi Kasai ,  Kenji Honda

    发明人： Takashi Kasai ,  Kenji Honda

    IPC分类号： F04B43/08

    CPC分类号： F04B43/12 ,  A61M5/14228 ,  A61M2205/14 ,  A61M2205/276 ,  F04B43/082

    摘要： A an infusion tube misfitting detection device for an infusion pump, which can be implemented at a low cost while maintaining safety. When a door unit is to be closed with respect to a pump body in a misloaded state of an infusion tube, a mislead detection inner door is pressed by the infusion tube to operate on a handle lock part provided to a handle. Accordingly, a claw portion of the handle lock part is pushed up, so that the door unit cannot be locked with the pump body 10 by inserting the claw portion into a rectangular through-hole 11c of a base plate. Therefore, the misloaded state can be identified.

    摘要翻译： 一种用于输液泵的输液管误配检测装置，其可以以低成本实现，同时保持安全性。 当门单元在输液管的错误状态下相对于泵体关闭时，输液管按压误导检测内门，以对设在手柄上的把手锁定部分进行操作。 因此，手柄锁定部的爪部被向上推，使得通过将爪部插入基板的矩形通孔11c中，门单元不能与泵体10锁定。 因此，可以识别错误的状态。

    Tubing misload detection mechanism for an infusion pump
    62.
    发明授权
    Tubing misload detection mechanism for an infusion pump 有权
    用于输液泵的管道误动检测机构

    公开(公告)号：US08257066B2

    公开(公告)日：2012-09-04

    申请号：US12429391

    申请日：2009-04-24

    申请人： Takashi Kasai ,  Kenji Honda

    发明人： Takashi Kasai ,  Kenji Honda

    IPC分类号： F04B43/08

    CPC分类号： F04B43/12 ,  A61M5/14228 ,  A61M2205/14 ,  A61M2205/276 ,  F04B43/082

    摘要： An infusion tube misloading detection mechanism for an infusion pump is provided at a low cost with a safety feature of detecting misloading of infusion tube. When a door unit is to be closed with respect to a pump body in a misloaded state of an infusion tube, a misload detection inner door is pressed by the misloaded infusion tube. Accordingly, an interlock part is prevented from being closed with the pump body. Therefore, the misloaded state can be easily identified.

    摘要翻译： 以低成本提供了用于输液泵的输液管错误检测机构，其具有检测输液管的误加载的安全特征。 当门单元相对于在输液管的错误状态下的泵体关闭时，错误检测内门被错误的输液管按压。 因此，防止了利用泵体关闭联锁部件。 因此，可以容易地识别错误的状态。

    SEMICONDUCTOR DEVICE HAVING NON-SILICIDE REGION IN WHICH NO SILICIDE IS FORMED ON DIFFUSION LAYER
    64.
    发明申请
    SEMICONDUCTOR DEVICE HAVING NON-SILICIDE REGION IN WHICH NO SILICIDE IS FORMED ON DIFFUSION LAYER 审中-公开
    具有不渗透层的非硅化物区域的半导体器件在扩散层上形成

    公开(公告)号：US20110254096A1

    公开(公告)日：2011-10-20

    申请号：US13167058

    申请日：2011-06-23

    申请人： Takayuki Hiraoka ,  Kuniaki Utsumi ,  Tsutomu Kojima ,  Kenji Honda

    发明人： Takayuki Hiraoka ,  Kuniaki Utsumi ,  Tsutomu Kojima ,  Kenji Honda

    IPC分类号： H01L29/772

    CPC分类号： H01L29/0847 ,  H01L21/823418 ,  H01L27/0266 ,  H01L27/088 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7835

    摘要： A semiconductor device includes first and second MOSFETs corresponding to at least first power source voltage and second power source voltage lower than the first power source voltage, and non-silicide regions formed in drain portions of the first and second MOSFETs and having no silicide formed therein. The first MOSFET includes first diffusion layers formed in source/drain portions, a second diffusion layer formed below a gate portion and formed shallower than the first diffusion layer and a third diffusion layer formed with the same depth as the second diffusion layer in the non-silicide region, and the second MOSFET includes fourth diffusion layers formed in source/drain portions, a fifth diffusion layer formed below a gate portion and formed shallower than the fourth diffusion layer and a sixth diffusion layer formed shallower than the fourth diffusion layer and deeper than the fifth diffusion layer in the non-silicide region.

    摘要翻译： 半导体器件包括对应于至少第一电源电压和低于第一电源电压的第二电源电压的第一和第二MOSFET，以及形成在第一和第二MOSFET的漏极部分中并且不形成在其中的硅化物的非硅化物区域 。 第一MOSFET包括形成在源极/漏极部分的第一扩散层，形成在栅极部分下方并形成为比第一扩散层浅的第二扩散层，以及形成在第一扩散层中的与第二扩散层相同深度的第三扩散层， 硅化物区域，第二MOSFET包括形成在源极/漏极部分的第四扩散层，形成在栅极部分下方并形成为比第四扩散层浅的第五扩散层和形成为比第四扩散层浅的第六扩散层， 非硅化物区域中的第五扩散层。

    DRIVING APPARATUS FOR HYBRID VEHICLE
    65.
    发明申请
    DRIVING APPARATUS FOR HYBRID VEHICLE 有权
    混合动力驾驶装置

    公开(公告)号：US20110036652A1

    公开(公告)日：2011-02-17

    申请号：US12937940

    申请日：2009-02-19

    申请人： Kenji Honda ,  Toshiyuki Yumoto

    发明人： Kenji Honda ,  Toshiyuki Yumoto

    IPC分类号： B60K6/48

    CPC分类号： B60K6/442 ,  B60K6/36 ,  B60K6/40 ,  B60K6/405 ,  B60L11/123 ,  B60L11/14 ,  B60L2270/145 ,  B60W2550/402 ,  Y02T10/6217 ,  Y02T10/6234 ,  Y02T10/7077

    摘要： A driving apparatus for a hybrid vehicle 100 includes an engine shaft 1, a generator shaft 2 and an idler shaft 3, which are arranged in parallel. The generator shaft 2 includes at least an inner shaft 2a and a hollow outer shaft 2b which is attached rotatably relative to the inner shaft 2a. The engine shaft 1 connected to the crank shaft 51 of an engine 50 is engaged, through a generator driving gear 10, to the inner shaft 2a which is coaxially provided with a generator 60. The outer shaft 2b of the generator shaft 2 which is coaxially provided with a motor 70 is engaged to the idler shaft 3 through a motor driving force transmission gear 20. The engine shaft 1 and idler shaft 3 are engaged to each other through an engine driving force transmission gear 30. The idler shaft 3 and a differential device 45 are engaged each other through a final gear 40. The differential device 45 is connected to driving wheels 47, 47 through a differential axles 46. The engine shaft 1 has a clutch 80 which serves to engage or disengage the power between the engine shaft 1 and idler shaft 3 through the engine driving force transmission gear 30.

    摘要翻译： 混合动力车辆100的驱动装置包括平行配置的发动机轴1，发电机轴2和惰轮轴3。 发电机轴2至少包括内轴2a和中空外轴2b，该外轴2a相对于内轴2a可旋转地附接。 与发动机50的曲轴51连接的发动机轴1通过发电机驱动齿轮10与同轴设置有发电机60的内轴2a接合。同轴地配置有发电机轴2的外轴2b 设置有马达70的马达70通过马达驱动力传动齿轮20接合到惰轮3.发动机轴1和惰轮轴3通过发动机驱动力传递齿轮30彼此接合。惰轮轴3和差速器 装置45通过最终齿轮40彼此接合。差速装置45通过差速器轴46连接到驱动轮47,47。发动机轴1具有离合器80，其用于使发动机轴 1和惰轮轴3通过发动机驱动力传动齿轮30。

    Non-corrosive cleaning composition for removing plasma etching residues
    68.
    发明授权
    Non-corrosive cleaning composition for removing plasma etching residues 有权
    用于去除等离子体蚀刻残留物的非腐蚀性清洁组合物

    公开(公告)号：US07402552B2

    公开(公告)日：2008-07-22

    申请号：US11305794

    申请日：2005-12-16

    申请人： Kenji Honda ,  Michelle Elderkin ,  Vincent Leon

    发明人： Kenji Honda ,  Michelle Elderkin ,  Vincent Leon

    IPC分类号： H01L21/461

    CPC分类号： C11D7/3209 ,  C11D7/10 ,  C11D7/265 ,  C11D11/0047

    摘要： A non-corrosive cleaning composition for removing residues from a substrate. The composition comprises: (a) water; (b) at least one hydroxylammonium compound; (c) at least one basic compound, preferably selected from the group consisting of amines and quaternary ammonium hydroxides; (d) at least one organic carboxylic acid; and (e) optionally, a polyhydric compound. The pH of the composition is preferably between about 2 to about 6.

    摘要翻译： 用于从基材中除去残留物的非腐蚀性清洁组合物。 组合物包括：（a）水; （b）至少一种羟基铵化合物; （c）至少一种碱性化合物，优选选自胺和季铵氢氧化物; （d）至少一种有机羧酸; 和（e）任选的多羟基化合物。 组合物的pH优选在约2至约6之间。

    GMR angle sensor for vehicles
    69.
    发明申请
    GMR angle sensor for vehicles 有权
    用于车辆的GMR角度传感器

    公开(公告)号：US20070164734A1

    公开(公告)日：2007-07-19

    申请号：US11651899

    申请日：2007-01-09

    申请人： Yoshikazu Shimizu ,  Ichiro Tokunaga ,  Kenji Honda

    发明人： Yoshikazu Shimizu ,  Ichiro Tokunaga ,  Kenji Honda

    IPC分类号： G01B7/30

    CPC分类号： G01D5/145

    摘要： A GMR angle sensor for vehicles includes a GMR element in which the element resistance is changed in response to an external magnetic field, lead conductors connected to either end of the GMR element, and a protective layer that seals the GMR element and the lead conductors, wherein the protective layer has a laminated structure including an oxidation-resistant inorganic film that ensures that the GMR element and the lead conductors are sufficiently insulated and a silicone-based organic film laminated on the inorganic film.

    摘要翻译： 用于车辆的GMR角度传感器包括响应于外部磁场而改变元件电阻的GMR元件，连接到GMR元件的任一端的引线导体和密封GMR元件和引线导体的保护层， 其中所述保护层具有包括抗氧化性无机膜的层压结构，所述抗氧化性无机膜确保所述GMR元件和所述引线导体充分绝缘，以及层叠在所述无机膜上的硅酮类有机膜。