公开(公告)号：US20060291097A1

公开(公告)日：2006-12-28

申请号：US11424495

申请日：2006-06-15

申请人： Kenji Honda ,  Naohiro Ishibashi ,  Daigo Aoki ,  Yasuo Hayakawa ,  Yoshihiro Nishiyama ,  Toshihiro Kobayashi

发明人： Kenji Honda ,  Naohiro Ishibashi ,  Daigo Aoki ,  Yasuo Hayakawa ,  Yoshihiro Nishiyama ,  Toshihiro Kobayashi

IPC分类号： G11B5/147 ,  G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F41/308

摘要： A magnetic sensing element including a laminate and a bias layer is provided. A first reactive-ion-etching (RIE) stop layer is disposed on a free magnetic layer. Second RIE stop layers are disposed on bias layers. The first and second RIE stop layers function as stop layers when layers on the first and second RIE stop layers are removed by reactive ion etching in a production process. Reactive ion etching is completed when the first RIE stop layer and the second RIE stop layers are exposed, the first and second RIE stop layers being disposed at almost the same height. Also provided is a process for producing the magnetic sensing element.

摘要翻译： 提供了包括层叠体和偏置层的磁感应元件。 第一反应离子蚀刻（RIE）停止层设置在自由磁性层上。 第二RIE停止层设置在偏置层上。 当生产过程中通过反应离子蚀刻去除第一和第二RIE停止层上的层时，第一和第二RIE停止层用作停止层。 当第一RIE停止层和第二RIE停止层暴露时，第一和第二RIE停止层设置在几乎相同的高度处，完成反应离子蚀刻。 还提供了一种用于制造磁感测元件的方法。

公开(公告)号：US06844998B2

公开(公告)日：2005-01-18

申请号：US10103359

申请日：2002-03-20

申请人： Daigo Aoki ,  Kenji Honda ,  Kiyoshi Sato ,  Naoya Hasegawa ,  Yukie Nakazawa

发明人： Daigo Aoki ,  Kenji Honda ,  Kiyoshi Sato ,  Naoya Hasegawa ,  Yukie Nakazawa

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01L43/08

CPC分类号： G11B5/3903 ,  H01L43/08

摘要： Assuming that a distance between an upper shield layer and a lower shield layer in an area, which overlaps only a first electrode layer, but does not overlap a second electrode layer, is G1s, and a distance between the upper shield layer and the lower shield layer at a position in alignment with a center of a multilayered film is G1c, a difference in value between G1s and G1c is set to be not larger than a predetermined value, whereby an effective track (read) width can be reduced.

摘要翻译： 假设在仅与第一电极层重叠但不与第二电极层重叠的区域中的上屏蔽层和下屏蔽层之间的距离为G1s，并且上屏蔽层和下屏蔽层之间的距离 在与多层膜的中心对准的位置处的层是G1c，G1s和G1c之间的值之差被设定为不大于预定值，从而可以减少有效的轨迹（读取）宽度。

公开(公告)号：US06791804B2

公开(公告)日：2004-09-14

申请号：US10337479

申请日：2003-01-06

申请人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Yoshihiko Kakihara

发明人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Yoshihiko Kakihara

IPC分类号： G11B539

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01L43/12 ,  Y10T29/49044

摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.

摘要翻译： 磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。 在多层膜上形成电极层。 在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。 不敏感区域仅增加直流电阻。 通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。 在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

公开(公告)号：US06690554B2

公开(公告)日：2004-02-10

申请号：US10337188

申请日：2003-01-06

申请人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Kiyoshi Sato ,  Yoshihiko Kakihara

发明人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Kiyoshi Sato ,  Yoshihiko Kakihara

IPC分类号： G11B539

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01L43/12 ,  Y10T29/49044

摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.

摘要翻译： 磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。 在多层膜上形成电极层。 在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。 不敏感区域仅增加直流电阻。 通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。 在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

公开(公告)号：US20060279882A1

公开(公告)日：2006-12-14

申请号：US11421732

申请日：2006-06-01

申请人： Kenji Honda ,  Naohiro Ishibashi ,  Yasuo Hayakawa ,  Yoshihiro Nishiyama ,  Daigo Aoki ,  Toshihiro Kobayashi

发明人： Kenji Honda ,  Naohiro Ishibashi ,  Yasuo Hayakawa ,  Yoshihiro Nishiyama ,  Daigo Aoki ,  Toshihiro Kobayashi

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  H01L43/12

摘要： There is provided a magnetic detecting element and a method of manufacturing the same. An intermediate layer and a corrosion preventing layer are laminated on a free magnetic layer. The corrosion preventing layer prevents the free magnetic layer from corroding due to reactive ion etching. Therefore, a laminator can be correspondingly formed in a predetermined shape, and the free magnetic layer can be prevented from corroding. As a result, it is possible to manufacture a magnetic detecting element having excellent reproduction output.

摘要翻译： 提供了一种磁检测元件及其制造方法。 在自由磁性层上层叠中间层和防腐蚀层。 防腐蚀层防止自由磁性层由于反应离子蚀刻而腐蚀。 因此，层叠机可以相应地形成为预定的形状，并且可以防止自由磁性层腐蚀。 结果，可以制造具有优异的再现输出的磁性检测元件。

公开(公告)号：US20080106820A1

公开(公告)日：2008-05-08

申请号：US11925104

申请日：2007-10-26

申请人： Daigo Aoki ,  Kenji Honda

发明人： Daigo Aoki ,  Kenji Honda

IPC分类号： G11B5/127

CPC分类号： G11B5/3133 ,  G11B5/3166 ,  G11B5/3169 ,  G11B5/3173

摘要： In a magnetic head structure that forms a medium facing surface of a head element unit by polishing processing, a height monitor that is exposed in the vicinity of the head element unit during the polishing processing to index the height of the head element unit is provided in a planar rectangular shape.

摘要翻译： 在通过抛光处理形成头元件单元的与介质相对表面的磁头结构中，在抛光处理期间暴露在头元件单元附近的高度监视器被设置在头元件单元的高度索引中 平面矩形。

公开(公告)号：US20070115595A1

公开(公告)日：2007-05-24

申请号：US11558345

申请日：2006-11-09

申请人： Kenji Honda ,  Naohiro Ishibashi ,  Daigo Aoki ,  Yasuo Hayakawa ,  Yoshihiro Nishiyama ,  Toshihiro Kobayashi

发明人： Kenji Honda ,  Naohiro Ishibashi ,  Daigo Aoki ,  Yasuo Hayakawa ,  Yoshihiro Nishiyama ,  Toshihiro Kobayashi

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3912 ,  G11B5/398

摘要： a CCP-type thin-film magnetic head and a manufacturing method thereof are provided. The CCP-type thin-film magnetic head includes a thin-film magnetic head element formed between the upper shield layer and the lower shield layer, and a side fill gap layer securing the insulating property, which is formed from both end faces of the thin-film magnetic head element, wherein a top surface of the lower shield layer is formed in a non-flat surface having a convex portion disposed at a center in a track width direction and a concave portion disposed at both sides in a track width direction of the convex portion, the thin-film magnetic head element is formed on the convex portion, and an buried gap layer contacting the side fill gap layer is formed in the concave portion.

摘要翻译： 提供了一种CCP型薄膜磁头及其制造方法。 CCP型薄膜磁头包括形成在上屏蔽层和下屏蔽层之间的薄膜磁头元件，以及确保绝缘性能的侧填充间隙层，其由薄的两个端面形成 所述下屏蔽层的上表面形成在具有设置在轨道宽度方向的中心的凸部的非平坦面和设置在轨道宽度方向的两侧的凹部 凸部，薄膜磁头元件形成在凸部上，并且在凹部中形成与侧填充间隙层接触的掩埋间隙层。

公开(公告)号：US08149540B2

公开(公告)日：2012-04-03

申请号：US11925104

申请日：2007-10-26

申请人： Daigo Aoki ,  Kenji Honda

发明人： Daigo Aoki ,  Kenji Honda

IPC分类号： G11B5/455

CPC分类号： G11B5/3133 ,  G11B5/3166 ,  G11B5/3169 ,  G11B5/3173

摘要： In a magnetic head structure that forms a medium facing surface of a head element unit by polishing processing, a height monitor that is exposed in the vicinity of the head element unit during the polishing processing to index the height of the head element unit is provided in a planar rectangular shape.

摘要翻译： 在通过抛光处理形成头元件单元的与介质相对表面的磁头结构中，在抛光处理期间暴露在头元件单元附近的高度监视器被设置在头元件单元的高度索引中 平面矩形。

公开(公告)号：US07623324B2

公开(公告)日：2009-11-24

申请号：US11424495

申请日：2006-06-15

申请人： Kenji Honda ,  Naohiro Ishibashi ,  Daigo Aoki ,  Yasuo Hayakawa ,  Yoshihiro Nishiyama ,  Toshihiro Kobayashi

发明人： Kenji Honda ,  Naohiro Ishibashi ,  Daigo Aoki ,  Yasuo Hayakawa ,  Yoshihiro Nishiyama ,  Toshihiro Kobayashi

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F41/308

摘要： A magnetic sensing element including a laminate and a bias layer is provided. A first reactive-ion-etching (RIE) stop layer is disposed on a free magnetic layer. Second RIE stop layers are disposed on bias layers. The first and second RIE stop layers function as stop layers when layers on the first and second RIE stop layers are removed by reactive ion etching in a production process. Reactive ion etching is completed when the first RIE stop layer and the second RIE stop layers are exposed, the first and second RIE stop layers being disposed at almost the same height. Also provided is a process for producing the magnetic sensing element.

摘要翻译： 提供了包括层叠体和偏置层的磁感应元件。 第一反应离子蚀刻（RIE）停止层设置在自由磁性层上。 第二RIE停止层设置在偏置层上。 当生产过程中通过反应离子蚀刻去除第一和第二RIE停止层上的层时，第一和第二RIE停止层用作停止层。 当第一RIE停止层和第二RIE停止层暴露时，第一和第二RIE停止层设置在几乎相同的高度处，完成反应离子蚀刻。 还提供了一种用于制造磁感测元件的方法。

公开(公告)号：US06587315B1

公开(公告)日：2003-07-01

申请号：US09487691

申请日：2000-01-19

申请人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Kiyoshi Sato ,  Yoshihiko Kakihara

发明人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Kiyoshi Sato ,  Yoshihiko Kakihara

IPC分类号： G11B539

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01L43/12 ,  Y10T29/49044

摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.

摘要翻译： 磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。 在多层膜上形成电极层。 在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。 不敏感区域仅增加直流电阻。 通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。 在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。