Magnetoresistive sensor having a quantum well structure and a P-doped trapping layer to prevent surface charge carriers from migrating to the quantum well structure
    61.
    发明授权
    Magnetoresistive sensor having a quantum well structure and a P-doped trapping layer to prevent surface charge carriers from migrating to the quantum well structure 有权
    具有量子阱结构和P掺杂俘获层的磁阻传感器,以防止表面电荷载流子迁移到量子阱结构

    公开(公告)号:US08274763B2

    公开(公告)日:2012-09-25

    申请号:US13420474

    申请日:2012-03-14

    IPC分类号: G11B5/39

    CPC分类号: G11B5/374

    摘要: A Lorentz Magnetoresistive sensor having an ultrathin trapping layer disposed between a quantum well structure and a surface of the sensor. The trapping layer prevents charge carriers from the surface of the sensor from affecting the quantum well structure. This allows the quantum well structure to be formed much closer to the surface of the sensor, and therefore, much closer to the magnetic field source, greatly improving sensor performance. A Lorentz Magnetoresistive sensor having a top gate electrode to hinder surface charge carriers diffusing into the quantum well, said top gate electrode being either a highly conductive ultrathin patterned metal layer or a patterned monoatomic layer of graphene.

    摘要翻译: 洛伦兹磁阻传感器,其具有设置在量子阱结构和传感器表面之间的超薄捕获层。 捕获层防止传感器表面的电荷载体影响量子阱结构。 这允许量子阱结构形成得更接近传感器的表面,因此更接近于磁场源,大大提高了传感器的性能。 一种洛伦兹磁阻传感器,其具有顶部栅极以阻止表面电荷载流子扩散到量子阱中,所述顶部栅电极是高度导电的超薄图案化的金属层或图案化的石墨烯单原子层。

    Patterned perpendicular magnetic recording medium with ultrathin oxide film and reduced switching field distribution
    62.
    发明授权
    Patterned perpendicular magnetic recording medium with ultrathin oxide film and reduced switching field distribution 有权
    具有超薄氧化膜的图案垂直磁记录介质和减少的开关场分布

    公开(公告)号:US08268461B1

    公开(公告)日:2012-09-18

    申请号:US13049124

    申请日:2011-03-16

    IPC分类号: G11B5/66

    摘要: A patterned perpendicular magnetic recording disk has a Co-alloy recording layer patterned into discrete data islands arranged in concentric tracks and exhibits a narrow switching field distribution (SFD). The disk includes a substrate, a NiTa alloy planarizing layer on the substrate, a nonmagnetic Ru-containing underlayer on the planarizing layer, an oxide-free Co alloy magnetic recording layer, and an ultrathin oxide film between the Ru-containing layer and the Co-alloy magnetic recording layer. The oxide film may be an oxide selected from a Ta-oxide, a Co-oxide and a Ti-oxide, and is ultrathin so that it may be considered a discontinuous film. The planarizing layer and ultrathin oxide film improve the growth homogeneity of the Co-alloy recording layer, so that the patterned disk with data islands shows significantly reduced SFD.

    摘要翻译: 图案化的垂直磁记录盘具有图案化为离散数据岛的Co合金记录层,其布置在同心轨道中并呈现窄的开关场分布(SFD)。 该盘包括衬底,衬底上的NiTa合金平面化层,平坦化层上的非磁性含Ru底层,不含氧化物的Co合金磁记录层以及Ru含有层和Co之间的超薄氧化物膜 合金磁记录层。 氧化膜可以是选自Ta氧化物,Co氧化物和Ti氧化物的氧化物,并且是超薄的,因此可以认为是不连续的膜。 平坦化层和超薄氧化物膜改善了Co合金记录层的生长均匀性,使得具有数据岛的图案化盘显示出显着降低的SFD。

    METHOD FOR MANUFACTURING GRAPHENE ELECTRONICS
    63.
    发明申请
    METHOD FOR MANUFACTURING GRAPHENE ELECTRONICS 有权
    制造石墨电子的方法

    公开(公告)号:US20120217480A1

    公开(公告)日:2012-08-30

    申请号:US13461696

    申请日:2012-05-01

    摘要: An electrical circuit structure employing graphene as a charge carrier transport layer. The structure includes a plurality of graphene layers. Electrical contact is made with one of the layer of the plurality of graphene layers, so that charge carriers travel only through that one layer. By constructing the active graphene layer within or on a plurality of graphene layers, the active graphene layer maintains the necessary planarity and crystalline integrity to ensure that the high charge carrier mobility properties of the active graphene layer remain intact.

    摘要翻译: 使用石墨烯作为电荷载流子传输层的电路结构。 该结构包括多个石墨烯层。 电接触由多个石墨烯层中的一个层制成,使得电荷载流子仅行进该层。 通过在多个石墨烯层之内或之上构建活性石墨烯层,活性石墨烯层保持必要的平面性和晶体完整性,以确保活性石墨烯层的高电荷载流子迁移率性质保持不变。

    MAGNETORESISTIVE SENOSOR HAVING A QUANTUM WELL STRUCTURE AND A TRAPPING LAYER TO PREVENT SURFACE CHARGE CARRIERS FROM MIGRATING TO THE QUANTUM WELL STRUCTURE
    64.
    发明申请
    MAGNETORESISTIVE SENOSOR HAVING A QUANTUM WELL STRUCTURE AND A TRAPPING LAYER TO PREVENT SURFACE CHARGE CARRIERS FROM MIGRATING TO THE QUANTUM WELL STRUCTURE 有权
    具有量子阱结构和阻挡层的磁阻电位器,以防止表面电荷载体从迁移到量子结构

    公开(公告)号:US20120176705A1

    公开(公告)日:2012-07-12

    申请号:US13420474

    申请日:2012-03-14

    IPC分类号: G11B5/127

    CPC分类号: G11B5/374

    摘要: A Lorentz Magnetoresistive sensor having an ultrathin trapping layer disposed between a quantum well structure and a surface of the sensor. The trapping layer prevents charge carriers from the surface of the sensor from affecting the quantum well structure. This allows the quantum well structure to be formed much closer to the surface of the sensor, and therefore, much closer to the magnetic field source, greatly improving sensor performance. A Lorentz Magnetoresistive sensor having a top gate electrode to hinder surface charge carriers diffusing into the quantum well, said top gate electrode being either a highly conductive ultrathin patterned metal layer or a patterned monoatomic layer of graphene.

    摘要翻译: 洛伦兹磁阻传感器,其具有设置在量子阱结构和传感器表面之间的超薄捕获层。 捕获层防止传感器表面的电荷载体影响量子阱结构。 这允许量子阱结构形成得更接近传感器的表面,因此更接近于磁场源,大大提高了传感器的性能。 一种洛伦兹磁阻传感器,其具有顶部栅极以阻止表面电荷载流子扩散到量子阱中,所述顶部栅电极是高度导电的超薄图案化的金属层或图案化的石墨烯单原子层。

    PATTERNED PERPENDICULAR MAGNETIC RECORDING DISK DRIVE AND MEDIUM WITH PATTERNED EXCHANGE BRIDGE LAYER BELOW THE DATA ISLANDS
    65.
    发明申请
    PATTERNED PERPENDICULAR MAGNETIC RECORDING DISK DRIVE AND MEDIUM WITH PATTERNED EXCHANGE BRIDGE LAYER BELOW THE DATA ISLANDS 有权
    图形数字岛上的图形交换电路板图形磁记录磁盘驱动器和介质

    公开(公告)号:US20120092790A1

    公开(公告)日:2012-04-19

    申请号:US12906909

    申请日:2010-10-18

    摘要: A patterned perpendicular magnetic recording disk with discrete data islands of recording layer (RL) material includes a substrate, a patterned exchange bridge layer of magnetic material between the substrate and the islands, and an optional exchange-coupling control layer (CCL) between the exchange bridge layer and the islands. The exchange bridge layer has patterned pedestals below the islands. The exchange bridge layer controls exchange interactions between the RLs in adjacent islands to compensate the dipolar fields between islands, and the pedestals concentrate the flux from the write head. The disk may include a soft underlayer (SUL) of soft magnetically permeable material on the substrate and a nonmagnetic exchange break layer (EBL) on the SUL between the SUL and the exchange bridge layer. In a thermally-assisted recording (TAR) disk a heat sink layer may be located below the exchange bridge layer and the SUL may be optional.

    摘要翻译: 具有记录层(RL)材料的离散数据岛的图案化垂直磁记录盘包括衬底,在衬底和岛之间的图案化的磁性材料交换桥接层,以及在交换器之间的任选的交换耦合控制层(CCL) 桥梁层和岛屿。 交换桥层在岛屿下方有图案化的基座。 交换桥接层控制相邻岛中的RL之间的交换相互作用以补偿岛之间的偶极场,并且基座集中来自写头的磁通。 盘可以包括在衬底上的软磁性可渗透材料的软底层(SUL)和在SUL和交换桥接层之间的SUL上的非磁性交换断层(EBL)。 在热辅助记录(TAR)盘中,散热层可以位于交换桥接层下方,并且SUL可以是可选的。

    Intermediate tri-layer structure for perpendicular recording media
    67.
    发明授权
    Intermediate tri-layer structure for perpendicular recording media 有权
    用于垂直记录介质的中间三层结构

    公开(公告)号:US07833640B2

    公开(公告)日:2010-11-16

    申请号:US11208207

    申请日:2005-08-19

    IPC分类号: G11B5/667

    CPC分类号: G11B5/7325 G11B5/65

    摘要: An improved structure for the construction of perpendicular recording media is disclosed. The structure includes a tri-layer IML resident between a soft under layer CoTaZr film and a CoPtCr—SiO2 magnetic media. In an embodiment, the tri-layer comprises a RuxCr1−x layer over dual nucleation layers of Ni—Fe and Ni—Fe—Cr. The tri-layer replaces the typical Ru and Ni—Fe intermediate layers of the prior art, resulting in considerable improvement in lattice matching between the Ru containing intermediate layer and the CoPtCr—SiO2 magnetic media, further resulting in improved magnetic media performance.

    摘要翻译: 公开了用于构建垂直记录介质的改进的结构。 该结构包括驻留在软底层CoTaZr膜和CoPtCr-SiO 2磁性介质之间的三层IML。 在一个实施方案中,三层包括在Ni-Fe和Ni-Fe-Cr的双成核层上的RuxCr1-x层。 三层代替现有技术的典型的Ru和Ni-Fe中间层,导致含Ru中间层和CoPtCr-SiO 2磁介质之间的晶格匹配相当大的改进,进一步导致改善的磁介质性能。

    Perpendicular magnetic recording disk with ultrathin nucleation film for improved corrosion resistance and method for making the disk
    68.
    发明授权
    Perpendicular magnetic recording disk with ultrathin nucleation film for improved corrosion resistance and method for making the disk 有权
    具有超薄成核膜的垂直磁记录盘,用于提高耐腐蚀性和制作盘的方法

    公开(公告)号:US07713389B2

    公开(公告)日:2010-05-11

    申请号:US11314128

    申请日:2005-12-21

    IPC分类号: C23C14/34

    摘要: A perpendicular magnetic recording disk has a granular cobalt alloy recording layer (RL) containing an additive oxide or oxides, an intermediate layer (IL) as an exchange-break layer on the “soft” magnetic underlayer (SUL), and an ultrathin nucleation film (NF) between the IL and the RL. In the method of making the disk, the IL is deposited at a relatively low sputtering pressure, to thereby reduce the roughness of the RL and overcoat (OC), while the NF and RL are deposited at substantially higher sputtering pressures. The resulting disk has good recording properties and improved corrosion resistance over a comparable disk made with an IL deposited at high sputtering pressure and without the NF. The NF may be a discontinuous film with an average thickness of less than about 1 nm.

    摘要翻译: 垂直磁记录盘具有包含添加氧化物或氧化物的颗粒状钴合金记录层(RL),作为“软”磁性底层(SUL)上的交换破坏层的中间层(IL))和超薄成核膜 (NF)在IL和RL之间。 在制造盘的方法中,以相对较低的溅射压力沉积IL,从而降低RL和外涂层(OC)的粗糙度,同时以显着更高的溅射压力沉积NF和RL。 所得到的盘具有良好的记录性能和改善的耐腐蚀性,在与以高溅射压力沉积并且不具有NF的情况下制备的IL相当的盘片上。 NF可以是平均厚度小于约1nm的不连续膜。