摘要:
As part of anti-fuse circuitry for a memory device, a preferred exemplary embodiment of the current invention provides a direct connection between an anti-fuse and a contact pad used to provide voltage to that anti-fuse. The contact pad also serves as a voltage source for at least one other part of the memory device. At least one circuit coupled to the anti-fuse is temporarily isolated from it in the event that a voltage present at the pad would damage the circuit or cause the circuit to improperly read the status of the anti-fuse. The contact pad is available during a probe stage of the in-process memory device, but once the device is packaged, access to that contact pad is prevented. At the back end of the production process, the anti-fuse may be accessed through a second pad, whose electrical communication with the anti-fuse is regulated.
摘要:
An improved input buffer circuit and method configured for voltage detection is provided that can facilitate use of a mid-level voltage for testing purposes. An exemplary input buffer configured for voltage detection comprises a reference generator and a multi-state detector. The reference generator is configured to generate at least two reference voltages to be provided as input signals to the multi-state detector. The multi-state detector is suitably configured to receive an input reference signal, and through comparison of the input reference signal to the two reference voltages, provide output signals to three output terminals representing a high, low and mid-level state of operation. An exemplary input buffer circuit can comprise two differential pairs of transistors configured in a back-to-back arrangement and sharing a common node, thus resulting in lower current requirements. In addition, the input buffer can provide for multiple operations from the same die pad without requiring the addition of command pins.
摘要:
An integrated circuit includes a first external pin and an input buffer connected to the first external pin. The input buffer includes an output terminal and a first test mode input terminal adapted to disable the output terminal in response to a first test mode signal. A method for testing an integrated circuit, the integrated circuit including a first external pin and an input buffer, includes providing a first external input signal to the first external pin at a first specified time, and disabling the input buffer at a second specified time after the first specified time.
摘要:
A booting circuit, used during antifuse programming, that has a clamping circuit designed to prevent a programming voltage from being unnecessarily limited by other components in an integrated circuit. The booting circuit is connected between an external interface, such as a bond pad, and an internal line, and is activated when the programming voltage is being applied directly to the internal line (i.e., not through the external interface). When activated, the clamping circuit allows a suitable and sufficiently high voltage to be applied to the internal line to properly program the antifuses while also clamping the amount of voltage seen at the external interface.
摘要:
An input buffer receives an external input signal during an active mode and a low-power mode. The input buffer includes a switching system to switch the input buffer between multiple conductive paths such that current consumed by the input buffer during the low-power mode is substantially less than current consumed by the buffer during the active mode.
摘要:
A method and apparatus for improving time between row address latching and column address latching (tRCD) by allowing the pull-up of the IO lines during a READ burst to end upon the firing of a column access signal rather than waiting for the next clock signal of the READ operation. A latch is set during the active command in order to set a node voltage which allows the IO pull-up signal to end upon the firing of the column access signal. The invention allows improvement in tRCD parameter, and allows digit line pairs to separate without unwanted line sharing with the IO lines prior to reading of the first bit of a data burst. The result is a more accurate and error-free read of a first bit of data during a READ sequence.
摘要:
A method and apparatus for reducing a peak current produced by the simultaneous activation of numerous sense amplifiers associated with an active word line, without reducing the speed of operation of the semiconductor memory device. A memory array includes word lines accessing memory cells and a tracking word line for sequentially activating the sense amplifiers connected to the digit lines by introducing a delay after the activation of each sense amplifier or group of sense amplifiers and before activating the next sense amplifier or group of sense amplifiers, so that the total time for activation of the sense amplifiers for all digit lines associated with an active word line is spread out, but is not longer than the time necessary for activation of an entire word line.
摘要:
In a multi-bank memory system such as a synchronous dynamic random access memory (SDRAM), a method of writing data to the banks is provided. This method allows for writing to any number of banks. More particularly, this method allows for writing to a selected number of banks between one and all banks. In addition, the method retains the discrete nature of the selected banks by allowing any row in each bank to be accessed regardless of the rows activated in other banks. As a result, rows of different memory banks that are intended to store similar data may be accessed simultaneously for purposes of writing the data in test and non-test modes. This allows for quicker writing to the SDRAM without the errors that may be created by other fast writing modes, such as data compression.
摘要:
An integrated circuit memory device is described which can operate at high data speeds. The memory device can either store or retrieve data from the memory in a burst access operation. The burst operations latch a memory address from external address lines and internally generates additional memory addresses. The integrated circuit memory can output data in a continuous stream while new rows of the memory are accessed. A method and circuit are described for outputting a burst of data stored in a first row of the memory while accessing a second row of the memory.
摘要:
Disclosed is a method and apparatus for connecting the wordlines of memory arrays to respective row decoders in a manner which reduces the physical space required for implementing a memory device. The wordlines of a first memory array are connected directly to an adjacent row decoder. Metal straps, which connect across every other wordline of the first memory array, are used to connect the row decoder to the wordlines of another memory array not adjacent to the row decoder. By utilizing the same row decoders for multiple arrays via the metal straps, the number of row decoders required for a memory bank can be reduced, thereby reducing the overall physical space necessary for implementation of the memory device. The use of metal for the straps provides minimal effect on the access timing of the wordlines connected to the row decoders via the metal straps, and the strapping of only every other wordline of each array provides sufficient space between the straps to prevent them from shorting together.