公开(公告)号：US07657992B2

公开(公告)日：2010-02-09

申请号：US12001429

申请日：2007-12-11

申请人： Cherng-Chyi Han ,  Kenichi Takano

发明人： Cherng-Chyi Han ,  Kenichi Takano

IPC分类号： G11B5/11 ,  G11B5/17

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/4906 ,  Y10T29/49062

摘要： A method of making a perpendicular magnetic recording (PMR) head with single or double coil layers and with a small write shield stitched onto a main write shield. The stitched shield allows the main write pole to produce a vertical write field with sharp vertical gradients that is reduced on both sides of the write pole so that adjacent track erasures are eliminated. From a fabrication point of view, both the main pole and the stitched shield are defined and formed using a single photolithographic process, a trim mask and CMP lapping process so that the main shield can be stitched onto a self-aligned main pole and stitched shield.

摘要翻译： 一种制造具有单线圈或双线圈层的垂直磁记录（PMR）头和缝合在主写屏蔽上的小写保护层的方法。 拼接屏蔽允许主写柱产生垂直写入场，其尖锐的垂直梯度在写入极的两侧减小，从而消除相邻的轨迹擦除。 从制造的角度来看，使用单一光刻工艺，修剪掩模和CMP研磨工艺来限定和形成主极和缝合屏蔽物，使得主屏蔽可以缝合到自对准的主极和缝合屏蔽 。

公开(公告)号：US07646568B2

公开(公告)日：2010-01-12

申请号：US11317598

申请日：2005-12-23

申请人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Yu-Hsia Chen ,  Min Li ,  Cherng-Chyi Han

发明人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Yu-Hsia Chen ,  Min Li ,  Cherng-Chyi Han

IPC分类号： G11B5/127

CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  Y10T29/49021

摘要： Improved magnetic devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of Ru on Ta. Although both Ru and Ta layers are ultra thin (between 5 and 20 Angstroms), good exchange bias between the seed and the AFM layer (IrMn about 70 Angstroms thick) is retained. This arrangement facilitates minimum shield-to-shield spacing and gives excellent performance in CPP, CCP-CPP, or TMR configurations.

摘要翻译： 已经通过用Ta上的Ru的双层代替常规种子层（通常为Ta）来制造改进的磁性器件。 虽然Ru和Ta层都是超薄的（5到20埃之间），但保留种子和AFM层之间良好的交换偏差（约为70埃的IrMn）。 这种安排有助于最小的屏蔽间隔，并在CPP，CCP-CPP或TMR配置中提供出色的性能。

公开(公告)号：US20090116145A1

公开(公告)日：2009-05-07

申请号：US11982597

申请日：2007-11-02

申请人： Liejie Guan ,  Joe Smyth ,  Moris Dovek ,  Yoshitaka Sasaki ,  Cherng-Chyi Han

发明人： Liejie Guan ,  Joe Smyth ,  Moris Dovek ,  Yoshitaka Sasaki ,  Cherng-Chyi Han

IPC分类号： G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/23 ,  G11B5/3163

摘要： A PMR writer with a tapered main pole layer and tapered non-magnetic top-shaping layer is disclosed that minimizes trailing shield saturation. A second non-magnetic top shaping layer may be employed to reduce the effective TH size while the bulk of the trailing shield is thicker to allow a larger process window for back end processing. A sloped surface with one end at the ABS and a second end 0.05 to 0.3 microns from the ABS is formed at a 10 to 80 degree angle to the ABS and includes a sloped surface on the upper portion of the main pole layer and on the non-magnetic top shaping layer. An end is formed on the second non-magnetic top shaping layer at the second end of the sloped surface followed by forming a conformal write gap layer and then depositing the trailing shield on the write gap layer and along the ABS.

摘要翻译： 公开了一种具有锥形主极层和锥形非磁性顶部成形层的PMR写入器，其使拖尾屏蔽饱和度最小化。 可以采用第二非磁性顶部成形层来减小有效的TH尺寸，同时尾部屏蔽的大部分较厚以允许用于后端处理的较大的工艺窗口。 在ABS处具有一端的倾斜表面和距离ABS的0.05至0.3微米的第二端与ABS形成10至80度的角度，并且包括在主极层的上部上的非倾斜表面， 磁顶成型层。 在倾斜表面的第二端处在第二非磁性顶部成形层上形成端部，随后形成共形写入间隙层，然后将后部屏蔽层沉积在写入间隙层上并沿着ABS。

公开(公告)号：US20090009907A1

公开(公告)日：2009-01-08

申请号：US11825034

申请日：2007-07-03

申请人： Kunliang Zhang ,  Min Zheng ,  Min Li ,  Chen-Jung Chien ,  Cherng-Chyi Han

发明人： Kunliang Zhang ,  Min Zheng ,  Min Li ,  Chen-Jung Chien ,  Cherng-Chyi Han

IPC分类号： G11B5/127 ,  G11B5/147

CPC分类号： G11B5/3116 ,  G11B5/1278

摘要： A laminated main pole layer is disclosed in which a non-AFC scheme is used to break the magnetic coupling between adjacent high moment layers and reduce remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. An amorphous material layer with a thickness of 3 to 20 Angstroms and made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, or Si is inserted between adjacent high moment stacks. The laminated structure also includes an alignment layer below each high moment layer within each stack. In one embodiment, a Ru coupling layer is inserted between two high moment layers in each stack to introduce an AFC scheme. An uppermost Ru layer is used as a CMP stop layer. A post annealing process may be employed to further reduce the anisotropy field (Hk).

摘要翻译： 公开了一种层叠主极层，其中使用非AFC方案来破坏相邻的高力矩层之间的磁耦合，并且在保持高磁矩的同时降低硬轴方向的剩磁，并实现Hch，Hce和 Hk。 由Hf，Zr，Ta，Al，Mg，Zn或Si中的一种或多种的氧化物，氮化物或氧氮化物形成的厚度为3〜20埃的无定形材料层插入相邻的高强度叠层之间。 层叠结构还包括在每个堆叠内的每个高力矩层下面的对准层。 在一个实施例中，Ru耦合层插入每个堆叠中的两个高矩层之间以引入AFC方案。 使用最上层的Ru层作为CMP停止层。 可以采用后退火工艺来进一步降低各向异性场（Hk）。

公开(公告)号：US20080094759A1

公开(公告)日：2008-04-24

申请号：US12001429

申请日：2007-12-11

申请人： Cherng-Chyi Han ,  Kenichi Takano

发明人： Cherng-Chyi Han ,  Kenichi Takano

IPC分类号： G11B5/10

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/4906 ,  Y10T29/49062

摘要： A method of making a perpendicular magnetic recording (PMR) head with single or double coil layers and with a small write shield stitched onto a main write shield. The stitched shield allows the main write pole to produce a vertical write field with sharp vertical gradients that is reduced on both sides of the write pole so that adjacent track erasures are eliminated. From a fabrication point of view, both the main pole and the stitched shield are defined and formed using a single photolithographic process, a trim mask and CMP lapping process so that the main shield can be stitched onto a self-aligned main pole and stitched shield.

摘要翻译： 一种制造具有单线圈或双线圈层的垂直磁记录（PMR）头和缝合在主写屏蔽上的小写保护层的方法。 拼接屏蔽允许主写柱产生垂直写入场，其尖锐的垂直梯度在写入极的两侧减小，从而消除相邻的轨迹擦除。 从制造的角度来看，使用单一光刻工艺，修剪掩模和CMP研磨工艺来限定和形成主极和缝合屏蔽物，使得主屏蔽可以缝合到自对准的主极和缝合屏蔽 。

公开(公告)号：US20070261967A1

公开(公告)日：2007-11-15

申请号：US11431261

申请日：2006-05-10

申请人： Xiaomin Liu ,  Feiyue Li ,  Cherng-Chyi Han

发明人： Xiaomin Liu ,  Feiyue Li ,  Cherng-Chyi Han

IPC分类号： C25D3/56

CPC分类号： C25D3/562 ,  C25D5/18 ,  G11B5/3163 ,  H01F41/26

摘要： A process is described for the fabrication, through electrodeposition, of FexCoyNiz (x=60-71, y=25-35, z=0-5) films that have, in their as-deposited form, a saturation magnetization of at least 24 kG and a coercivity of less than 0.3 Oe. A key feature is the addition of aryl sulfinates to the plating bath along with a suitable seed layer.

摘要翻译： 描述了通过电沉积制造Fe x Sb x Ni x Z x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x（x = 35，z = 0-5）具有其沉积形式的至少24kG的饱和磁化强度和小于0.3Oe的矫顽力的膜。 一个关键的特征是在适当的种子层的同时向镀浴中加入芳基亚硫酸盐。

公开(公告)号：US07251102B2

公开(公告)日：2007-07-31

申请号：US10782496

申请日：2004-02-19

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Laurie Lauchlan ,  Lei Zhang

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Laurie Lauchlan ,  Lei Zhang

IPC分类号： G11B5/127

CPC分类号： G11B5/33 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/4906 ,  Y10T29/49062 ,  Y10T29/49064

摘要： Aggressive (i.e. tight tolerance) stitching offers several advantages for magnetic write heads but at the cost of some losses during pole trimming. This problem has been overcome by replacing the alumina filler layer, that is used to protect the stitched pole during trimming, with a layer of electro-plated material. Because of the superior step coverage associated with the plating method of deposition, pole trimming can then proceed without the introduction of stresses to the stitched pole while it is being trimmed.

摘要翻译： 积极（即紧公差）缝合为磁性写入头提供了几个优点，但是在极修整期间以一些损失为代价。 通过用一层电镀材料代替在修整期间用于保护缝合极的氧化铝填料层已经克服了这个问题。 由于与沉积电镀方法相关的优越的台阶覆盖，因此可以进行极细修剪，而不会在缝合极被修剪时引入应力。

公开(公告)号：US07196876B2

公开(公告)日：2007-03-27

申请号：US10236359

申请日：2002-09-06

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Pokang Wang

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Pokang Wang

IPC分类号： G11B5/39 ,  G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49052

摘要： A method for forming an abutted junction GMR bottom spin valve sensor in which the free layer has a maximum effective length due to the elimination or minimization of bias layer and conducting lead layer overspreading onto the sensor element and the consequent reduction of current shunting. The overspreading is eliminated by forming a thin dielectric layer on the upper surface of the sensor element. When the biasing and conducting leads are formed on the abutted junction, they overspread onto this layer and the overspread can be removed by an ion-milling process during which the dielectric layer protects the sensor.

摘要翻译： 用于形成邻接结GMR底部自旋阀传感器的方法，其中自由层由于偏置层的消除或最小化而导致最大有效长度，并且导致引线层过度传播到传感器元件上，从而减少了电流分流。 通过在传感器元件的上表面上形成薄的电介质层来消除超扩展。 当偏置和导电引线形成在邻接接头上时，它们被扩展到该层上，并且可以通过离子铣削工艺去除超扩展，其中电介质层保护传感器。

公开(公告)号：US06826015B2

公开(公告)日：2004-11-30

申请号：US10453048

申请日：2003-06-03

申请人： Mao-Min Chen ,  Pokang Wang ,  Cherng-Chyi Han

发明人： Mao-Min Chen ,  Pokang Wang ,  Cherng-Chyi Han

IPC分类号： G11B531

CPC分类号： G11B5/3116 ,  G11B5/313 ,  G11B5/3146 ,  G11B5/3163 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A flux concentrating stitched write head design for high data rate applications is provided. The flux concentration is achieved by means of a non-magnetic step embedded into a portion of the lower magnetic pole of the write head, just beneath the write gap layer. The design permits extremely short throat heights, which will be required by future high data rate applications.

摘要翻译： 提供了一种用于高数据速率应用的通量集中缝合写头设计。 磁通量集中通过嵌入写入头下部磁极的一部分的非磁性步骤来实现，正好位于写入间隙层的正下方。 该设计允许极短的喉部高度，这将是未来高数据速率应用所需要的。

公开(公告)号：US06469875B1

公开(公告)日：2002-10-22

申请号：US09525672

申请日：2000-03-15

申请人： Mao-Min Chen ,  Po-Kang Wang ,  Cherng-Chyi Han

发明人： Mao-Min Chen ,  Po-Kang Wang ,  Cherng-Chyi Han

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49048

摘要： A structure and a method for a stitched write head having a sunken share pole. The method includes forming a bottom coil dielectric layer over the first half shared pole. Coils are formed over the bottom coil dielectric layer. Next, second half shared poles (P1) are formed over the first half shared pole (S2). We form a top coil dielectric layer over the structure. In a key step, we chemical-mechanical polish the top coil dielectric layer. A write gap layer (WG) is formed over the front second half shared pole and the top coil dielectric layer over the coils. An upper pole (P3) and hard mask are formed over the write gap layer. We etch the write gap layer and the second half shared pole (P1) using the upper pole as an etch mask to remove a portion of the second half shared pole (P1) adjacent to the write gap layer thereby forming a partially trimmed pole.

摘要翻译： 一种具有凹陷的共享极的缝合写头的结构和方法。 该方法包括在第一半共享极上形成底部线圈电介质层。 线圈形成在底部线圈电介质层上。 接下来，在第一半共享极（S2）上形成第二半共享极（P1）。 我们在结构上形成顶层线圈介电层。 在关键步骤中，我们化学机械抛光顶层线圈介电层。 写入间隙层（WG）形成在线圈上的前第二半共享极和顶部线圈电介质层上。 在写间隙层上形成上极（P3）和硬掩模。 我们使用上极蚀刻写间隙层和第二半共享极（P1）作为蚀刻掩模，以去除与写间隙层相邻的第二半共享极（P1）的一部分，从而形成部分修整的极。