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公开(公告)号：US20110049555A1
公开(公告)日：2011-03-03
申请号：US12921379
申请日：2009-03-13
申请人： Karl Engl , Lutz Hoeppel , Patrick Rode , Matthias Sabathil
发明人： Karl Engl , Lutz Hoeppel , Patrick Rode , Matthias Sabathil
CPC分类号： H01L33/382 , H01L33/10 , H01L33/40 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip has a semiconductor layer sequence having an active layer that generates radiation between a layer of a first conductivity type and a layer of a second conductivity type. The layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence. The semiconductor layer sequence contains at least one cutout extending from a rear side, lying opposite the front side, of the semiconductor layer sequence through the active layer to the layer of the first conductivity type. The layer of the first conductivity type is electrically connected through the cutout by means of a first electrical connection layer which covers the rear side of the semiconductor layer sequence at least in places.
摘要翻译： 光电子半导体芯片具有半导体层序列，该半导体层序列具有在第一导电类型的层和第二导电类型的层之间产生辐射的有源层。 第一导电类型的层与半导体层序列的正面相邻。 半导体层序列包含从半导体层序列通过有源层延伸到第一导电类型的层的从前侧的与背面相对的至少一个切口。 第一导电类型的层通过第一电连接层通过切口电连接，第一电连接层至少在某些地方覆盖半导体层序列的后侧。
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62.发明申请公开(公告)号：US20100283073A1
公开(公告)日：2010-11-11
申请号：US12680714
申请日：2008-09-04
CPC分类号： H01L33/38 , H01L33/10 , H01L33/145 , H01L33/405 , H01L2924/0002 , H01L2924/00
摘要： A thin-film LED comprising a barrier layer (3), a first mirror layer (2) succeeding the barrier layer (3), a layer stack (5) succeeding the first mirror layer (2), and at least one contact structure (6) succeeding the layer stack (5). The layer stack (5) has at least one active layer (5a) which emits electromagnetic radiation. The contact structure (6) is arranged on a radiation exit area (4) and has a contact area (7). The first mirror layer (2) has, in a region lying opposite the contact area of the contact structure (6), a cutout which is larger than the contact area (7) of the contact structure (6). The efficiency of the thin-film LED is increased as a result.
摘要翻译： 一种薄膜LED，包括阻挡层（3），位于阻挡层（3）之后的第一镜层（2），在第一镜面层（2）之后的层叠体（5），以及至少一个接触结构 6）后续层叠（5）。 层叠体（5）具有至少一个发射电磁辐射的活性层（5a）。 接触结构（6）设置在辐射出口区域（4）上并且具有接触区域（7）。 第一镜层（2）在与接触结构（6）的接触区域相对的区域中具有大于接触结构（6）的接触面积（7）的切口。 结果，提高了薄膜LED的效率。
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公开(公告)号：US20100230698A1
公开(公告)日：2010-09-16
申请号：US12678259
申请日：2008-08-27
申请人： Patrick Rode , Karl Engl , Martin Strassburg , Lutz Hoeppel , Matthias Sabathil
发明人： Patrick Rode , Karl Engl , Martin Strassburg , Lutz Hoeppel , Matthias Sabathil
CPC分类号： H01L33/405 , H01L33/007 , H01L33/40 , H01L33/58 , H01L2933/0091
摘要： An optoelectronic semiconductor body includes a substrate with a front side for emitting electromagnetic radiation. The optoelectronic semiconductor body has a semiconductor layer sequence that is arranged on a rear side of the substrate and has an active layer suitable for generating the electromagnetic radiation. The optoelectronic semiconductor body also includes first and second electrical connection layers that are arranged on a first surface of the semiconductor body that faces away from the substrate.
摘要翻译： 光电子半导体本体包括具有用于发射电磁辐射的前侧的衬底。 光电半导体本体具有布置在衬底的后侧上的半导体层序列，并且具有适于产生电磁辐射的有源层。 光电子半导体本体还包括布置在半导体本体的远离衬底的第一表面上的第一和第二电连接层。
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公开(公告)号：US20100181583A1
公开(公告)日：2010-07-22
申请号：US11494984
申请日：2006-07-28
申请人： Matthias Peter , Uwe Strausse , Matthias Sabathil
发明人： Matthias Peter , Uwe Strausse , Matthias Sabathil
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/02 , H01L33/32 , H01L2924/0002 , H01S5/2004 , H01S5/32341 , H01L2924/00
摘要： A radiation-emitting semiconductor chip is specified, comprising a semiconductor body (3) having an n-conducting region (4) and a p-conducting region (5), the semiconductor body having a hole barrier layer containing a material from the material system InyGa1-x-yAlxN.
摘要翻译： 一种辐射发射半导体芯片，包括具有n导电区域（4）和p导电区域（5）的半导体本体（3），该半导体本体具有包含材料体系的材料的空穴阻挡层 InyGa1-x-yAlxN。
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