公开(公告)号：US08618458B2

公开(公告)日：2013-12-31

申请号：US12266764

申请日：2008-11-07

申请人： John P. McCarten ,  Joseph R. Summa ,  Cristian A. Tivarus ,  Todd J. Anderson ,  Eric G. Stevens

发明人： John P. McCarten ,  Joseph R. Summa ,  Cristian A. Tivarus ,  Todd J. Anderson ,  Eric G. Stevens

IPC分类号： H01L27/00

CPC分类号： H01L27/14643 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14689

摘要： A back-illuminated image sensor includes a sensor layer disposed between an insulating layer and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors is formed in the sensor layer and a well that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer with a region including formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface between the sensor layer and the insulating layer.

摘要翻译： 背照式图像传感器包括设置在电连接到传感器层的绝缘层和电路层之间的传感器层。 成像区域包括在传感器层中形成多个光电检测器和跨越成像区域的阱。 阱可以设置在传感器层的背面和光电检测器之间，或者阱可以是与传感器层的背面相邻形成的掩埋阱，其中区域包括形成在光电探测器和掩埋阱之间。 一个或多个侧孔可以横向邻近于每个光电检测器形成。 阱中的掺杂剂具有使掺杂剂积聚在传感器层和绝缘层之间的界面的传感器层侧上的分离系数。

公开(公告)号：US08329499B2

公开(公告)日：2012-12-11

申请号：US12609296

申请日：2009-10-30

申请人： Edmund K. Banghart ,  Eric G. Stevens ,  Hung Q. Doan

发明人： Edmund K. Banghart ,  Eric G. Stevens ,  Hung Q. Doan

IPC分类号： H01L21/426 ,  H01L31/14

CPC分类号： H01L27/14887 ,  H01L27/14656 ,  H01L27/14674 ,  H01L27/14683 ,  H01L27/1485

摘要： A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.

摘要翻译： 使用双掩模工艺制造横向溢流漏斗和通道停止。 每个横向溢流排水口形成在相应的通道停止件内。 由于使用两个掩模层，每个横向溢出漏极的一个边缘与相应的通道停止件的边缘对准或基本对准。

公开(公告)号：US08101450B1

公开(公告)日：2012-01-24

申请号：US12966238

申请日：2010-12-13

申请人： Hung Q. Doan ,  Eric G. Stevens ,  Robert M. Guidash

发明人： Hung Q. Doan ,  Eric G. Stevens ,  Robert M. Guidash

IPC分类号： H01L21/00 ,  H01L21/8238 ,  H01L21/176

CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14683

摘要： Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed along an interior bottom and sidewalls of each trench. A second dielectric structure is disposed over the pinning layer. The dielectric structures include a silicon nitride layer disposed over an oxide layer. An n-type isolation layer is disposed along only a portion of the exterior bottom of the trench and the exterior sidewall of the trench immediately adjacent to the photodetector. The n-type isolation layer is not disposed along the remaining portion of the bottom or the opposing exterior sidewall of the trench.

摘要翻译： 浅沟槽隔离区设置在与光电检测器的收集区域相邻并且横向邻近电荷 - 电压转换区域的n型硅半导体层中。 浅沟槽隔离区域各自包括设置在硅半导体层中的沟槽和沿着每个沟槽的内部底部和侧壁设置的第一介电结构。 第二电介质结构设置在钉扎层之上。 电介质结构包括设置在氧化物层上的氮化硅层。 n型隔离层仅沿着沟槽的外部底部的一部分和紧邻光电检测器的沟槽的外侧壁设置。 n型隔离层不沿着沟槽的底部或相对的外侧壁的剩余部分设置。

公开(公告)号：US08018016B2

公开(公告)日：2011-09-13

申请号：US12492460

申请日：2009-06-26

申请人： John P. McCarten ,  Cristian A. Tivarus ,  Joseph R. Summa ,  Eric G. Stevens ,  Hung Q. Doan ,  Robert M. Guidash

发明人： John P. McCarten ,  Cristian A. Tivarus ,  Joseph R. Summa ,  Eric G. Stevens ,  Hung Q. Doan ,  Robert M. Guidash

IPC分类号： H01L31/101

CPC分类号： H01L27/14603 ,  H01L27/14605 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/035272

摘要： A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. An insulating layer is disposed over the backside. A circuit layer is formed adjacent to the frontside such that the sensor layer is positioned between the circuit layer and the insulating layer. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors is formed in the sensor layer contiguous to portions of the backside region of the second conductivity type.

摘要翻译： 背照式图像传感器包括第一导电类型的传感器层，其具有前侧和与前侧相对的背面。 绝缘层设置在背面上。 电路层邻近前侧形成，使得传感器层位于电路层和绝缘层之间。 第二导电类型的一个或多个前侧区域形成在传感器层的前侧的至少一部分中。 第二导电类型的背面区域形成在传感器层的背面。 第一导电类型的多个前端光电检测器设置在传感器层中。 在与第二导电类型的背侧区域的部分邻接的传感器层中形成有与多个前端光电检测器分离的第一导电类型的不同多个背面光电检测器。

公开(公告)号：US20110159635A1

公开(公告)日：2011-06-30

申请号：US12942507

申请日：2010-11-09

申请人： Hung Q. Doan ,  Eric G. Stevens

发明人： Hung Q. Doan ,  Eric G. Stevens

IPC分类号： H01L31/18

CPC分类号： H01L27/1463 ,  H01L21/2253 ,  H01L27/14683

摘要： An image sensor having an imaging area that includes a substrate layer and a plurality of pixels formed therein. Multiple pixels each include a photodetector formed in the substrate layer. Isolation layers are formed in the substrate layer by performing a series of implants of one or more dopants of a first conductivity type into the substrate layer. Each isolation layer implant is performed with a different energy than the other isolation layer implants in the series and each implant implants the one or more dopants into the entire imaging area. The photodetectors are formed in the substrate layer by performing a series of implants of one or more dopants of a second conductivity type into each pixel in the substrate layer. Each photodetector implant is performed with a different energy than the other photodetector implants in the series.

摘要翻译： 一种图像传感器，其具有包括基板层和形成在其中的多个像素的成像区域。 多个像素各自包括形成在基底层中的光电检测器。 通过将一种或多种第一导电类型的掺杂剂的一系列植入物进入衬底层，在衬底层中形成隔离层。 每个隔离层植入物以与串联中的其它隔离层植入物不同的能量来执行，并且每个植入物将一种或多种掺杂剂植入整个成像区域。 通过在衬底层中的每个像素中执行一系列对第二导电类型的掺杂剂的一种或多种注入物，在衬底层中形成光电检测器。 每个光电探测器植入物以与该系列中的其它光电检测器植入物不同的能量来执行。

公开(公告)号：US07776638B2

公开(公告)日：2010-08-17

申请号：US12247248

申请日：2008-10-08

申请人： James P. Lavine ,  Eric G. Stevens

发明人： James P. Lavine ,  Eric G. Stevens

IPC分类号： H01L21/00

CPC分类号： H01L27/14654 ,  H01L27/14632 ,  H01L27/14687

摘要： An image sensor includes a substrate of a first conductivity type having an image area with a plurality of photosensitive sites, wherein a portion of the charge generated in response to light is collected in the pixel; and a subcollector of a second conductivity spanning the image area that collects another portion of the generated charge that would have otherwise diffused to adjacent photosensitive sites.

摘要翻译： 图像传感器包括具有多个感光位置的图像区域的第一导电类型的衬底，其中响应于光产生的电荷的一部分被收集在像素中; 以及横跨图像区域的第二电导率的子集电极，其收集另外将产生的电荷的另一部分，否则其将扩散到相邻的光敏部位。

公开(公告)号：US07402882B2

公开(公告)日：2008-07-22

申请号：US10924061

申请日：2004-08-23

申请人： Shen Wang ,  William F. DesJardin ,  Robert P. Fabinski ,  David N. Nichols ,  Christopher Parks ,  Eric G. Stevens

发明人： Shen Wang ,  William F. DesJardin ,  Robert P. Fabinski ,  David N. Nichols ,  Christopher Parks ,  Eric G. Stevens

IPC分类号： H01L29/72

CPC分类号： H01L27/14601 ,  H01L27/14623 ,  H01L27/14806

摘要： A charge coupled device includes a substrate; a plurality of image pixels arranged in a two dimensional array in the substrate for capturing an electronic representation of an image and for transferring charge in a first direction; a transfer mechanism for transferring charge in a second direction from the plurality of the image pixels for further processing; an amplifier structure disposed in the substrate that receives the charge from the transfer mechanism and converts the charge into a voltage signal; a first opaque layer spanning over the amplifier for blocking near-infrared light inherently generated by an electrical field within the amplifier structure when a voltage is applied; and a second opaque layer deposited into the substrate for also blocking near-infrared light inherently generated by an electrical field within the amplifier structure when a voltage is applied.

摘要翻译： 电荷耦合器件包括衬底; 在基板中以二维阵列布置的多个图像像素，用于捕获图像的电子表示并用于沿第一方向传送电荷; 用于从多个图像像素沿第二方向传送电荷以用于进一步处理的传送机构; 放大器结构，设置在所述基板中，从所述传送机构接收所述电荷并将所述电荷转换为电压信号; 跨越放大器的第一不透明层，用于阻挡当施加电压时由放大器结构内的电场固有地产生的近红外光; 以及沉积到衬底中的第二不透明层，用于当施加电压时也阻挡由放大器结构内的电场固有地产生的近红外光。

公开(公告)号：US06878919B1

公开(公告)日：2005-04-12

申请号：US10833386

申请日：2004-04-28

申请人： David N. Nichols ,  Eric G. Stevens ,  Stephen L. Kosman

发明人： David N. Nichols ,  Eric G. Stevens ,  Stephen L. Kosman

IPC分类号： H01L21/00 ,  H01L21/4763 ,  H01L27/146 ,  H01L31/02

CPC分类号： H01L27/14623 ,  H01L27/14636 ,  H01L27/14685

摘要： An image sensor includes a substrate having photosensitive areas; an insulator spanning the substrate; and a first and second layer of a multi-layer metallization structure, wherein the first layer forms light shield regions over selected portions of the photosensitive area as well forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area; and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging areas and the second layer overlays edges of the first layer.

摘要翻译： 图像传感器包括具有感光区域的基板; 跨越衬底的绝缘体; 以及多层金属化结构的第一和第二层，其中所述第一层在所述感光区域的选定部分上形成光屏蔽区域，并形成电路互连和阻挡区域，以防止在非接触的接触处尖峰进入衬底或栅极 成像面积 并且第二层仅在非成像区域上跨越第一层的互连和阻挡区域，并且第二层覆盖第一层的边缘。

公开(公告)号：US06867062B2

公开(公告)日：2005-03-15

申请号：US10641724

申请日：2003-08-15

申请人： Eric G. Stevens

发明人： Eric G. Stevens

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L21/00

CPC分类号： H01L27/14601 ,  H01L27/14806

摘要： An image sensor includes a substrate containing photosensitive areas; an insulator spanning the substrate; and a first and second layer of a multi-layer metalization structure wherein the first layer forms the light shield regions over portions of the photosensitive area as well as forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area, and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging area.

摘要翻译： 图像传感器包括含有感光区域的基板; 跨越衬底的绝缘体; 以及多层金属化结构的第一和第二层，其中第一层在感光区域的部分上形成遮光区域，以及形成电路互连和阻挡区域，以防止在非接触的接触处尖峰进入衬底或栅极 以及仅在非成像区域上跨越第一层的互连和屏障区域的第二层。

公开(公告)号：US06803960B2

公开(公告)日：2004-10-12

申请号：US09736936

申请日：2000-12-14

申请人： John P. Shepherd ,  Eric G. Stevens

发明人： John P. Shepherd ,  Eric G. Stevens

IPC分类号： H04N5335

CPC分类号： H01L27/14818 ,  H01L27/1485

摘要： An optically operated test structure for testing the charge transfer efficiency (CTE) of a charge coupled device (CCD) solid-state image sensor. A solid-state image sensor includes a substrate of a semiconductor material of one conductivity type having a surface. A plurality of spaced, parallel CCDs are in the substrate at the surface. Each CCD includes a channel region and a plurality of conductive gates extending across and insulated from the channel region. The conductive gates extend laterally across the channel regions of all of the CCDs and divide the channel regions into a plurality of phases and pixels. A drain region of the opposite conductivity type is in the substrate at the surface and extends along the channel region of at least one of the CCDs. A simply connected (rectangular) region of the plurality of spaced, parallel CCDs is photoactive. The CCDs outside this photoactive region are typically covered with metal or some other optically opaque material. One or more of the parallel CCD columns comprise optical test structures at the start and end of the CCD array and are photoactive. One or more parallel regions are adjacent and abutting on either side of the test structures; these may or may not be photoactive. These surrounding, adjacent regions are connected to a drain on the imager; the drain collects any charge captured in these adjacent regions. Each of the plurality of spaced, parallel, vertical CCDs is connected to one or more horizontal CCDs oriented in a direction perpendicular to the vertical CCDs.

摘要翻译： 一种用于测试电荷耦合器件（CCD）固态图像传感器的电荷转移效率（CTE）的光学测试结构。 固态图像传感器包括具有表面的一种导电类型的半导体材料的衬底。 多个间隔开的平行CCD位于表面的基板中。 每个CCD包括沟道区域和延伸跨过沟道区域并且与沟道区域绝缘的多个导电栅极。 导电栅极跨越所有CCD的沟道区域横向延伸，并将沟道区域分成多个相位和像素。 相反导电类型的漏区在表面处于衬底中并且沿着至少一个CCD的沟道区延伸。 多个间隔开的并联CCD的简单连接（矩形）区域是光活性的。 该光活性区域外的CCD通常被金属或其它不透光材料覆盖。 并行CCD列中的一个或多个包括在CCD阵列的开始和结束处的光学测试结构，并且是光活性的。 一个或多个平行区域在测试结构的两侧相邻并邻接; 这些可能或可能不是光敏的。 这些周围的相邻区域连接到成像器上的漏极; 漏极收集在这些相邻区域捕获的任何电荷。 多个相互平行的垂直CCD中的每一个连接到垂直于垂直CCD的方向上定向的一个或多个水平CCD。