公开(公告)号：US06730977B2

公开(公告)日：2004-05-04

申请号：US10452999

申请日：2003-06-03

申请人： Glen D. Wilk ,  John Mark Anthony ,  Yi Wei ,  Robert M. Wallace

发明人： Glen D. Wilk ,  John Mark Anthony ,  Yi Wei ,  Robert M. Wallace

IPC分类号： H01L2976

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3185 ,  H01L29/511 ,  H01L29/513 ,  H01L29/518

摘要： A method for forming a thermal silicon nitride on a semiconductor substrate is disclosed. This method allows formation of thermal silicon nitride that is thick enough for a FET gate dielectric, but has a low thermal budget.

摘要翻译： 公开了一种在半导体衬底上形成热氮化硅的方法。 该方法允许形成足够厚的用于FET栅极电介质但具有低热量预算的热氮化硅。

公开(公告)号：US06596187B2

公开(公告)日：2003-07-22

申请号：US09942456

申请日：2001-08-29

申请人： Bernard F. Coll ,  Yi Wei

发明人： Bernard F. Coll ,  Yi Wei

IPC分类号： C23C1626

CPC分类号： C23C14/5873 ,  B01J23/74 ,  B01J25/00 ,  B01J37/06 ,  B82Y15/00 ,  C23C16/26 ,  Y10S977/893

摘要： A method of forming a nano-supported sponge catalyst (10) on a substrate (12) is comprised of depositing an active catalytic metallic element (16) on the substrate (12) and depositing a structural metallic element (18) with the active catalytic metallic element (16) to form a mixed metal alloy layer (14). The method is further comprised of etching the mixed metal alloy layer (14) with an etchant to oxidize the active catalytic metallic element (16) and the structural metallic element (18) and to remove at least a portion of the structural metallic element (18) from a first sub-layer of the mixed metal alloy layer (14). The first sub-layer of the mixed metal alloy layer (14) is porous and comprised of nano-particles of the active catalytic metallic element (16) that are supported by a metal oxide structure derived from the structural metallic element (18).

公开(公告)号：US06258637B1

公开(公告)日：2001-07-10

申请号：US09452922

申请日：1999-12-02

申请人： Glen D. Wilk ,  Yi Wei ,  Robert M. Wallace

发明人： Glen D. Wilk ,  Yi Wei ,  Robert M. Wallace

IPC分类号： H01L2100

CPC分类号： H01L21/02043 ,  H01L21/02046 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/31662 ,  Y10S438/974

摘要： A method of preparing a surface for and forming a thin film on a single-crystal silicon substrate is disclosed. One embodiment of his method comprises forming an oxidized silicon layer (which may be a native oxide) on at least one region of the substrate, and thermally annealing the substrate in a vacuum while supplying a silicon-containing flux to the oxide surface, thus removing the oxidized silicon layer. Preferably, the thin film is formed immediately after removal of the oxidized silicon layer. The silicon-containing flux is preferably insufficient to deposit a silicon-containing layer on top of the oxidized silicon layer, and yet sufficient to substantially inhibit an SiO-forming reaction between the silicon substrate and the oxidized silicon layer. The method of the invention allows for growth or deposition of films which have exceptionally smooth interfaces (less than 0.1 nm rms roughness) with the underlying silicon substrate at temperatures less than 800° C., and is ideally suited for deposition of ultrathin films having thicknesses less than about 5 nm.

摘要翻译： 公开了一种制备在单晶硅衬底上形成薄膜的表面的方法。 他的方法的一个实施方案包括在衬底的至少一个区域上形成氧化硅层（其可以是天然氧化物），并且在真空中对衬底进行热退火，同时向氧化物表面提供含硅助焊剂，从而除去 氧化硅层。 优选地，在去除氧化硅层之后立即形成薄膜。 含硅助焊剂优选不足以在氧化硅层的顶部上沉积含硅层，并且还足以基本上抑制硅衬底和氧化硅层之间的形成SiO的反应。 本发明的方法允许在低于800℃的温度下与底层硅衬底具有非常平滑的界面（小于0.1nm均方根粗糙度）的生长或沉积，并且理想地适用于沉积具有厚度的超薄膜 小于约5nm。

公开(公告)号：US5807919A

公开(公告)日：1998-09-15

申请号：US689752

申请日：1996-08-13

申请人： Youlu Duan ,  Yi Wei ,  Yuduo Zhu

发明人： Youlu Duan ,  Yi Wei ,  Yuduo Zhu

IPC分类号： C08G18/08 ,  C08G18/46 ,  C09D175/06 ,  C09J175/06 ,  C08J3/02

CPC分类号： C09D175/06 ,  C08G18/0828 ,  C08G18/4676 ,  C09J175/06 ,  C08G2270/00

摘要： A method for the preparation of sulfonated polymer compositions wherein water dispersible isocyanate-terminated polyurethane prepolymers are reacted in the presence of aqueous polyvinyl dispersions which may contain active hydrogen atoms. The inventive compositions develop interpenetrating polymer networks, which may form core-shell type structures, and are characterized as having enhanced mechanical and adhesion properties.

摘要翻译： 一种制备磺化聚合物组合物的方法，其中水分散异氰酸酯封端的聚氨酯预聚物在可含有活性氢原子的聚乙烯基分散体存在下反应。 本发明的组合物开发互穿聚合物网络，其可以形成核 - 壳型结构，并且其特征在于具有增强的机械和粘合性质。