Composite structure and process for producing it
    3.
    发明授权
    Composite structure and process for producing it 失效
    复合结构及其生产工艺

    公开(公告)号:US06506451B1

    公开(公告)日:2003-01-14

    申请号:US08647318

    申请日:1996-05-09

    IPC分类号: C23C1626

    摘要: A composite structure having a substantially monocrystalline growth substrate and at least one monocrystalline or polycrystalline layer of diamond or diamond-like material arranged on a surface of the growth substrate, the surface of the growth substrate being provided with crystal growth nuclei having crystal axes which exhibit an inclination of not more than 10%, preferably not more than 7%, with respect to corresponding axes of the crystal lattice of the growth substrate, and a process for producing such a composite structure in which the growth substrate is pretreated and growth nuclei are deposited from a nucleating gas phase of known composition for depositing layers of diamond or diamond-like material, in which during the nucleation the growth substrate is raised to a negative electrical potential relative to the nucleating gas phase.

    摘要翻译: 一种具有基本单晶生长衬底和布置在生长衬底的表面上的金刚石或类金刚石材料的至少一个单晶或多晶层的复合结构,所述生长衬底的表面设置有具有晶轴的晶体生长核, 相对于生长基板的晶格的相应轴线的倾斜度不大于10%,优选不超过7%,以及用于制备其中预处理生长衬底和生长核的复合结构的方法 从已知组合物的成核气相沉积,用于沉积金刚石或类金刚石材料层,其中在成核期间,生长衬底相对于成核气相升高至负电位。

    Guide bush and method of forming hard carbon film over the inner surface of the guide bush
    5.
    发明授权
    Guide bush and method of forming hard carbon film over the inner surface of the guide bush 失效
    引导衬套和在导套内表面上形成硬质碳膜的方法

    公开(公告)号:US06419997B1

    公开(公告)日:2002-07-16

    申请号:US09514896

    申请日:2000-02-28

    IPC分类号: C23C1626

    摘要: A hard carbon film (15) is formed directly or through an intermediate layer for enhancing adhesion over an inner surface (11b) of a guide bush (11) for holding a workpiece (51) rotatably and axially slidable on an automatic lathe at a position near a cutting tool, to be in sliding contact with the workpiece (51) or directly or through an intermediate layer for enhancing adhesion on the surface of a superhard lining fixed to the inner surface (11b). The guide bush (11) has remarkably enhanced durability and prevents damaging the workpiece (51) and seizing that makes a machining operation impossible even when the guide bush (11) is used for an extended period of time and when the automatic lathe operates for heavy machining. The hard carbon film (15) having satisfactory adhesion to the inner surface (11b) can be efficiently formed in a uniform thickness over the inner surface (11b) by placing the guide bush (11) in a vacuum vessel, extending an auxiliary electrode in the center bore of the guide bush (11) and producing a plasma of a gas containing carbon.

    摘要翻译: 硬质碳膜(15)直接或通过中间层形成,用于增强在导筒(11)的内表面(11b)上的粘合力,用于保持工件(51)在自动车床上可旋转和轴向滑动的位置 靠近切割工具,与工件(51)滑动接触,或直接或通过中间层,以增强固定在内表面(11b)上的超硬衬里的表面上的附着力。 引导衬套(11)具有显着增强的耐久性,并且防止损坏工件(51)并且即使当导套(11)长时间使用时也不可能进行加工操作,并且当自动车床操作重 加工。 通过将引导衬套(11)放置在真空容器中,可以在内表面(11b)上以均匀的厚度有效地形成对内表面(11b)具有令人满意的粘合力的硬质碳膜(15) 引导衬套(11)的中心孔并产生含碳气体的等离子体。

    Method for producing insulator film
    6.
    发明授权
    Method for producing insulator film 失效
    绝缘膜制造方法

    公开(公告)号:US06419985B1

    公开(公告)日:2002-07-16

    申请号:US09578719

    申请日:2000-05-26

    申请人: Shuichi Ishizuka

    发明人: Shuichi Ishizuka

    IPC分类号: C23C1626

    摘要: A method for producing an insulator film for use as an interlayer dielectric film in a semiconductor device having a multi-level interconnection structure is disclosed. An inert plasma producing gas, such as argon, is introduced into a vacuum vessel along with a thin film deposition gas, such as a compound gas containing fluorine and carbon. Activation of the plasma producing gas activates the thin film producing gas, resulting in a thin fluorine containing carbon insulator film on the semiconductor device. In order to thermally stabilize the insulator layer, the semiconductor device is annealed.

    摘要翻译: 公开了一种在具有多层互连结构的半导体器件中制造用作层间绝缘膜的绝缘膜的方法。 将惰性等离子体产生气体如氩气与薄膜沉积气体如含氟和碳的复合气体一起引入真空容器中。 激活等离子体产生气体激活产生薄膜的气体,在半导体器件上产生薄的含氟碳绝缘膜。 为了使绝缘体层热稳定,半导体器件退火。

    Method of forming carbon nanotubes and apparatus therefor
    9.
    发明授权
    Method of forming carbon nanotubes and apparatus therefor 失效
    形成碳纳米管的方法及其装置

    公开(公告)号:US06699525B2

    公开(公告)日:2004-03-02

    申请号:US09835757

    申请日:2001-04-16

    IPC分类号: C23C1626

    摘要: Carbon nanotubes are formed on a substrate by providing a coiled filament in a chemical vapor deposition chamber, supporting a substrate having a catalytic coating provided thereon inside the coiled filament, evacuating air, if present, from the chamber, heating the filament and applying a bias voltage between the filament and the substrate, introducing a reactant gas into the chamber, and pyrolyzing the reactant gas to deposit the carbon nanotubes on the catalytic coating. The substrate can be in the form of a rod or fiber and the carbon nanotubes can be deposited in a radially extending cluster on the substrate. The present invention also contemplates an apparatus for carrying out the inventive method.

    摘要翻译: 碳纳米管通过在化学气相沉积室中提供螺旋丝而形成在基底上,支撑在其内部设置有催化剂涂层的基底,从腔室排出空气(如果存在),加热细丝并施加偏压 在灯丝和衬底之间施加电压,将反应气体引入室中,并热解反应气体以将碳纳米管沉积在催化涂层上。 衬底可以是棒或纤维的形式,并且碳纳米管可以沉积在衬底上的径向延伸的簇中。 本发明还考虑了用于实施本发明方法的装置。