公开(公告)号：US06749990B2

公开(公告)日：2004-06-15

申请号：US10054095

申请日：2002-01-22

Applicant: Jae Chang Jung ,  Geun Su Lee ,  Ki Soo Shin

Inventor： Jae Chang Jung ,  Geun Su Lee ,  Ki Soo Shin

IPC: G03F7004

CPC classification number: G03F7/0395 ,  G03F7/0046 ,  Y10S430/108

Abstract: A chemical amplification photoresist monomer, a photoresist polymer prepared thereof, and a photoresist composition using the polymer. More specifically, a chemical amplification photoresist polymer comprising a fluorine-containing monomer represented by Chemical Formula 1, and a composition comprising the polymer. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, it is very useful for forming ultramicro pattern in the process using a light source of far ultraviolet, especially of VUV (157 nm). In the Formula, R1, R2, R3 and R4 is defined in the specification.

Abstract translation: 化学扩增光致抗蚀剂单体，其制备的光致抗蚀剂聚合物和使用该聚合物的光致抗蚀剂组合物。 更具体地说，包括由化学式1表示的含氟单体的化学扩增光致抗蚀剂聚合物和包含该聚合物的组合物。光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可在四甲基氢氧化铵（TMAH） 解。 由于组合物在193nm和157nm波长处具有低吸光度，因此在使用远紫外光源（尤其是VUV（157nm））的方法中形成超微图案非常有用。在式中，R1，R2， R3和R4在本说明书中定义。

公开(公告)号：US06653047B2

公开(公告)日：2003-11-25

申请号：US10107650

申请日：2002-03-27

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

IPC: G03F7004

CPC classification number: G03F7/0395 ,  G03F7/0046 ,  Y10S430/106

Abstract: Photoresist monomers, photoresist polymers prepared therefrom, and photoresist compositions using the polymers are disclosed. More specifically, photoresist polymers comprising a photoresist monomer containing fluorine-substituted benzylcarboxylate represented by Formula 1, and a composition comprising the polymer are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in aqueous tetramethylammonium hydroxide (TMAH) solution. And, the present photoresist composition is suitable to form a fine pattern using deep ultraviolet light source such as VUV (157 nm), since the composition has low light absorbance at 193 nm and 157 nm wavelength. wherein, X1, X2, R1, l and m are defined in the specification.

Abstract translation: 公开了光阻单体，由其制备的光致抗蚀剂聚合物和使用该聚合物的光致抗蚀剂组合物。 更具体地，公开了包含由式1表示的含氟取代的苄基羧酸酯的光致抗蚀剂单体的光致抗蚀剂聚合物和包含该聚合物的组合物。 光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可以在四甲基氢氧化铵（TMAH）水溶液中显影。 并且，本发明的光致抗蚀剂组合物适合于使用深紫外光源如VUV（157nm）形成精细图案，因为该组合物在193nm和157nm波长处具有低吸光度。其中X1，X2，R1，l 和m在说明书中定义。

公开(公告)号：US06627379B2

公开(公告)日：2003-09-30

申请号：US09837394

申请日：2001-04-18

Applicant: Jin Soo Kim ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Jin Soo Kim ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: G03F7/40 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/111

Abstract: Photoresist compositions which are useful in a resist flow process are disclosed. A process for forming a contact hole pattern using the disclosed photoresist compositions is also disclosed. The disclosed photoresist resin includes a mixture of two or more polymers. Preferably, a mixture of a first copolymer and a second copolymer are cross-linked, and thus it prevents a contact hole from being collapsed due to over flow which is typically observed during a conventional resist flow process. In addition, the disclosed photoresist compositions allow formation of uniform sized patterns.

公开(公告)号：US06613493B2

公开(公告)日：2003-09-02

申请号：US10037515

申请日：2002-01-04

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

IPC: G03F7004

CPC classification number: G03F7/0392 ,  Y10S430/106

Abstract: Photoresist polymers having nitro groups (—NO2), and photoresist compositions containing the same. A photoresist pattern having excellent endurance, etching resistance, reproducibility and resolution can be formed by the use of the photoresist copolymer comprising polymerization repeating units represented by Chemical Formula 1a or 1b: wherein, R1, a, b, c, d, e, f, g and h is defined in the specification. Having nitro groups in the polymer, the photoresist polymer results in a low absorbance in the range of 157 nm wavelength, so that it is extremely useful for a photolithography process using, in particular, VUV light source.

Abstract translation: 具有硝基（-NO 2）的光致抗蚀剂聚合物和含有它们的光致抗蚀剂组合物。 可以通过使用由化学式1a或1b表示的聚合重复单元的光致抗蚀剂共聚物形成具有优异的耐久性，耐蚀刻性，再现性和分辨率的光致抗蚀剂图案：其中，R1，a，b，c，d，e，f g和h在本说明书中定义。在聚合物中具有硝基，光致抗蚀剂聚合物在157nm波长范围内导致低吸光度，因此其对于使用特别是VUV光的光刻工艺非常有用 资源。

公开(公告)号：US06569599B2

公开(公告)日：2003-05-27

申请号：US09852371

申请日：2001-05-10

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: G03F7/0758 ,  G03F7/0045 ,  G03F7/095 ,  Y10S430/106 ,  Y10S430/111

Abstract: The present invention provides photoresist polymers, processes for producing the same, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions. In particular, photoresist polymers of the present invention comprise a moiety of the Formula: where R1, R2, R3 and R4 are those defined herein. Photoresist polymers of the present invention have a relatively high etching resistance, and therefore are useful in thin resist processes and bilayer photoresist processes. Moreover, photoresist polymers of the present invention have a high contrast ratio between the exposed region and the non-exposed region.

Abstract translation: 本发明提供光致抗蚀剂聚合物，其制备方法，包含这种聚合物的光致抗蚀剂组合物，以及使用这种光致抗蚀剂组合物制备光刻胶图案的方法。 特别地，本发明的光致抗蚀剂聚合物包含下式的部分：其中R 1，R 2，R 3和R 4是本文定义的那些。 本发明的光致抗蚀剂聚合物具有相对高的抗蚀刻性，因此可用于薄抗蚀剂工艺和双层光刻胶工艺。 此外，本发明的光致抗蚀剂聚合物在曝光区域和非曝光区域之间具有高对比度。

公开(公告)号：US06391518B1

公开(公告)日：2002-05-21

申请号：US09360402

申请日：1999-07-23

Applicant: Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: C08F232/08 ,  G03F7/0382 ,  G03F7/0395

Abstract: The present invention provides a photoresist monomer represented by the following formula 2; a photoresist copolymer represented by the following formula 100; and a photoresist composition containing the same. wherein, R1 and R2 are independently —COOH or —R—COOH; and R is a substituted or unsubstituted (C1-C10) alkyl. wherein, R1 and R2 are independently —COOH or —R—COOH ; R is a substituted or unsubstituted (C1-C10) alkyl; R3 is —COOR* or —R′COOR*; R* is an acid labile group; R′ is a substituted or unsubstituted (C1-C10) alkyl; R4 is H or R3; R5 is a substituted or unsubstituted (C1-C10) alkyl; and a:b:c is the polymerization ratio of the comonomer.

Abstract translation: 本发明提供由下式2表示的光致抗蚀剂单体; 由下式100表示​​的光致抗蚀剂共聚物; 和含有它们的光致抗蚀剂组合物，其中R 1和R 2独立地是-COOH或-R-COOH; 并且R是取代或未取代的（C1-C10）烷基。其中R1和R2独立地是-COOH或-R-COOH; R是取代或未取代的（C 1 -C 10）烷基; R3是-COOR *或-R'COOR *; R *是酸不稳定组; R'是取代或未取代的（C 1 -C 10）烷基; R4是H或R3; R5是取代或未取代的（C1-C10）烷基; 和a：b：c是共聚单体的聚合比。

公开(公告)号：US06376632B1

公开(公告)日：2002-04-23

申请号：US09850177

申请日：2001-05-07

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

IPC: C08F13204

CPC classification number: C07C59/46 ,  C07C57/26 ,  C07C59/80 ,  C07C69/608 ,  C07C69/732 ,  C07C69/738 ,  C08G61/08 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/106

Abstract: The present invention relates to a carboxyl-containing alicyclic compound represented by Chemical Formula 1: [formula 1] wherein, R1 and R2, which may be identical to or different from each other, represent hydrogen or a tert-butyl group; X represents hydrogen, hydroxy or oxygen; and n represents a number from 1 to 3. Compounds of the present invention are useful as monomers in a photoresist resin, and in a process for preparing the same.

Abstract translation: 本发明涉及由化学式1表示的含羧基脂环族化合物：[式1]其中R1和R2可以相同或不同，表示氢或叔丁基; X表示氢，羟基或氧; n表示1〜3的数。本发明的化合物可用作光致抗蚀剂树脂中的单体，也可用作其制备方法。

公开(公告)号：US08202443B2

公开(公告)日：2012-06-19

申请号：US12833389

申请日：2010-07-09

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: B44C1/22

CPC classification number: C09K13/08 ,  H01L27/10852 ,  H01L28/91

Abstract: An etching composition for preventing from leaning a capacitor contains hydrofluoric acid (HF), ammonium fluoride (NH4F), an alkyl ammonium fluoride (ReNH3F; where Re is a C1-C10 linear or branched alkyl radical), a surfactant, an alcohol compound, and water. The composition can effectively suppress the leaning phenomenon of capacitors during the formation of the capacitors, so that height of the storage node of the capacitor can be secured, capacitors with improved capacitance can be manufactured, and the process can be adapted to the production of both present and future devices.

Abstract translation: 用于防止倾斜电容器的蚀刻组合物包含氢氟酸（HF），氟化铵（NH4F），烷基氟化铵（ReNH3F;其中Re是C1-C10直链或支链烷基），表面活性剂，醇化合物， 和水。 该组合物可以有效地抑制在形成电容器期间电容器的倾斜现象，从而可以确保电容器的存储节点的高度，并且可以制造具有改善的电容的电容器，并且该工艺可以适应于两者的生产 现在和未来的设备。

公开(公告)号：US20080166842A1

公开(公告)日：2008-07-10

申请号：US11784284

申请日：2007-04-06

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: H01L29/00 ,  C09K13/08

CPC classification number: C09K13/08 ,  H01L27/10852 ,  H01L28/91

Abstract: An etching composition for preventing from leaning a capacitor contains hydrofluoric acid (HF), ammonium fluoride (NH4F), an alkyl ammonium fluoride (ReNH3F; where Re is a C1-C10 linear or branched alkyl radical), a surfactant, an alcohol compound, and water. The composition can effectively suppress the leaning phenomenon of capacitors during the formation of the capacitors, so that height of the storage node of the capacitor can be secured, capacitors with improved capacitance can be manufactured, and the process can be adapted to the production of both present and future devices.

Abstract translation: 用于防止倾斜电容器的蚀刻组合物包含氢氟酸（HF），氟化铵（NH 4 F F），烷基氟化铵（R 3 N 3 N 3） F;其中R e是C 1 -C 10直链或支链烷基），表面活性剂，醇化合物 ，和水。 该组合物可以有效地抑制在形成电容器期间电容器的倾斜现象，从而可以确保电容器的存储节点的高度，并且可以制造具有改善的电容的电容器，并且该工艺可以适应于两者的生产 现在和未来的设备。

公开(公告)号：US20080138747A1

公开(公告)日：2008-06-12

申请号：US11935184

申请日：2007-11-05

Applicant: Geun Su Lee ,  Sam Young Kim ,  Keun Do Ban

Inventor： Geun Su Lee ,  Sam Young Kim ,  Keun Do Ban

IPC: G03F7/30

CPC classification number: G03F7/322 ,  C11D1/004 ,  C11D11/0047

Abstract: Disclosed herein are photoresist cleaning solutions useful for cleaning a semiconductor substrate in the last step of a developing step when photoresist patterns are formed. Also disclosed herein are methods for forming photoresist patterns using the solutions. The cleaning solutions of the present invention include H2O as a primary component, a surfactant as an additive, and optionally an alcohol compound. The cleaning solution of the present invention has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to pattern collapse and stabilizing the photoresist pattern formation.

Abstract translation: 本文公开了当形成光致抗蚀剂图案时在显影步骤的最后步骤中用于清洁半导体衬底的光致抗蚀剂清洁溶液。 本文还公开了使用该溶液形成光致抗蚀剂图案的方法。 本发明的清洗溶液包括作为主要组分的H 2 O 2，作为添加剂的表面活性剂和任选的醇化合物。 本发明的清洗液比常规清洗液使用的蒸馏水具有更低的表面张力，从而提高了图案的崩溃性和稳定光刻胶图形的形成。