公开(公告)号：US20080239590A1

公开(公告)日：2008-10-02

申请号：US12071589

申请日：2008-02-22

申请人： Hiromi Fuke ,  Susumu Hashimoto ,  Masayuki Takagishi ,  Hitoshi Iwasaki

发明人： Hiromi Fuke ,  Susumu Hashimoto ,  Masayuki Takagishi ,  Hitoshi Iwasaki

IPC分类号： G11B5/33

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B2005/3996

摘要： A magneto-resistance effect element, including: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.

摘要翻译： 一种磁电阻效应元件，包括：第一磁化层，其一个方向上的磁化基本固定; 磁化根据外部磁场旋转的第二磁化层; 中间层，其包含绝缘部分和磁性金属部分，并且设置在第一磁性层和第二磁性层之间; 以及一对电极，其在垂直于由第一磁性层，中间层和第二磁性层制成的多层膜的膜表面的方向上流动电流; 其中中间层的磁性金属部分含有非铁磁性金属。

公开(公告)号：US20080013218A1

公开(公告)日：2008-01-17

申请号：US11822700

申请日：2007-07-09

申请人： Hiromi Fuke ,  Susumu Hashimoto ,  Masayuki Takagishi ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masaaki Doi ,  Kousaku Miyake

发明人： Hiromi Fuke ,  Susumu Hashimoto ,  Masayuki Takagishi ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masaaki Doi ,  Kousaku Miyake

IPC分类号： G11B5/33

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B2005/3996 ,  H01L43/08

摘要： A magnetoresistive effect element, includes: a magnetoresistive effect film including: a magnetization fixed layer having a first ferromagnetic film of which magnetization direction is practically fixed in one direction; a magnetization free layer having a second ferromagnetic film of which magnetization direction changes with corresponding to an external magnetic field; and a spacer layer disposed between the magnetization fixed layer and magnetization free layer, and having an insulating layer and a ferromagnetic metal portion penetrating through the insulating layer; a pair of electrodes applying a sense current in a perpendicular direction relative to a film surface of the magnetoresistive effect film; and a layer containing a non-ferromagnetic element disposed at least one of an inside of the magnetization fixed layer-and an inside of the magnetization free layer.

摘要翻译： 一种磁阻效应元件，包括：磁阻效应膜，包括：具有第一铁磁性膜的磁化固定层，其磁化方向实际上在一个方向上固定; 磁化自由层，具有磁化方向相应于外部磁场而变化的第二铁磁性膜; 以及设置在所述磁化固定层和磁化自由层之间并具有贯穿所述绝缘层的绝缘层和强磁性金属部分的间隔层; 一对电极相对于磁阻效应膜的膜表面在垂直方向施加感测电流; 以及包含设置在磁化固定层的内部和磁化自由层的内部中的至少一个的非铁磁性元件的层。

公开(公告)号：US20070159733A1

公开(公告)日：2007-07-12

申请号：US11644904

申请日：2006-12-26

申请人： Susumu Hashimoto ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masaaki Doi ,  Kousaku Miyake ,  Masashi Sahashi

发明人： Susumu Hashimoto ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masaaki Doi ,  Kousaku Miyake ,  Masashi Sahashi

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B5/398 ,  G11C11/16 ,  H01L43/08 ,  H01L43/12

摘要： A magnetoresistive effect element includes a magnetoresistive effect film including a magnetization pinned layer, a magnetization free layer, and an intermediate layer interposed therebetween and having a magnetic region and a nonmagnetic region whose electrical resistance is higher than the magnetic region. A sense current is passed to the magnetoresistive effect film in a direction substantially perpendicular to the film plane thereof. The magnetic region of the intermediate layer penetrates the nonmagnetic region locally and extends in the direction substantially perpendicular to the film plane. The nonmagnetic region contains a nonmagnetic metallic element having a larger surface energy than a magnetic metallic element contained in the magnetic region.

摘要翻译： 磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括磁化固定层，磁化自由层和插入其间的中间层，并且具有磁性区域和电阻高于磁性区域的非磁性区域。 感测电流在大致垂直于其膜平面的方向上传递到磁阻效应膜。 中间层的磁性区域局部地穿透非磁性区域，并且在基本上垂直于膜平面的方向上延伸。 非磁性区域包含具有比包含在磁性区域中的磁性金属元素更大的表面能的非磁性金属元素。

公开(公告)号：US5304975A

公开(公告)日：1994-04-19

申请号：US965073

申请日：1992-10-22

申请人： Yoshiaki Saito ,  Susumu Hashimoto ,  Koichiro Inomata ,  Hitoshi Iwasaki ,  Reiko Kondoh ,  Junichi Akiyama ,  Yuichi Ohsawa ,  Toshihiko Ohto

发明人： Yoshiaki Saito ,  Susumu Hashimoto ,  Koichiro Inomata ,  Hitoshi Iwasaki ,  Reiko Kondoh ,  Junichi Akiyama ,  Yuichi Ohsawa ,  Toshihiko Ohto

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01L43/10 ,  H01L43/08 ,  G01R33/02

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  H01L43/10 ,  G11B2005/3996

摘要： A magnetoresistance effect element includes a multilayer obtained by stacking magnetic and nonmagnetic layers to exhibit a magnetoresistance effect, and an reversal assist layer formed on the multilayer to assist reversal of a magnetic moment of the magnetic layer.

摘要翻译： 磁阻效应元件包括通过堆叠磁性和非磁性层以显示磁阻效应而获得的多层，以及形成在多层上的反向辅助层，以辅助磁性层的磁矩的反转。

公开(公告)号：US08564904B2

公开(公告)日：2013-10-22

申请号：US13239496

申请日：2011-09-22

申请人： Hitoshi Iwasaki ,  Masayuki Takagishi ,  Kenichiro Yamada ,  Susumu Hashimoto ,  Yusuke Tomoda

发明人： Hitoshi Iwasaki ,  Masayuki Takagishi ,  Kenichiro Yamada ,  Susumu Hashimoto ,  Yusuke Tomoda

IPC分类号： G11B5/127

CPC分类号： G11B5/3906 ,  G01R33/093 ,  G11B5/1278 ,  G11B2005/0002 ,  G11B2005/0008 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  Y10T428/11

摘要： According to one embodiment, a magnetic head includes a reproducing section. The reproducing section detects a medium magnetic field recorded in a magnetic recording medium. The reproducing section includes a stacked film and a magnetic field application unit. The stacked film includes a first magnetization layer and a second magnetization layer. The first magnetization layer has a perpendicular magnetic anisotropy. A magnetization of the first magnetization layer being is fixed. The second magnetization layer is stacked with the first magnetization layer and oscillates. The magnetic field application unit is stacked with the stacked film and applies a bias magnetic field having a component along the first axis to the stacked film. A resistance of the stacked film changes in accordance with the medium magnetic field when a current not less than a value at which the second magnetization layer oscillates is passed.

摘要翻译： 根据一个实施例，磁头包括再现部分。 再现部分检测记录在磁记录介质中的介质磁场。 再现部分包括堆叠膜和磁场施加单元。 层叠膜包括第一磁化层和第二磁化层。 第一磁化层具有垂直的磁各向异性。 第一磁化层的磁化是固定的。 第二磁化层与第一磁化层堆叠并振荡。 磁场施加单元与层叠的膜堆叠，并且将具有沿着第一轴的分量的偏置磁场施加到堆叠的膜。 当不小于第二磁化层振荡的值的电流通过时，堆叠膜的电阻根据中等磁场而变化。

公开(公告)号：US08363362B2

公开(公告)日：2013-01-29

申请号：US13360856

申请日：2012-01-30

申请人： Hiromi Fuke ,  Susumu Hashimoto ,  Masayuki Takagishi ,  Hitoshi Iwasaki

发明人： Hiromi Fuke ,  Susumu Hashimoto ,  Masayuki Takagishi ,  Hitoshi Iwasaki

IPC分类号： G11B5/027

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  H01L43/08 ,  Y10T428/1107

摘要： According to one embodiment, a magnetoresistive element includes a first ferromagnetic layer a magnetization direction of which is pinned, a second ferromagnetic layer a magnetization direction of which is changed depending on an external magnetic field, an intermediate layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and including an insulating layer and a magnetic conductive column, an alloy layer formed between the magnetic conductive column in the intermediate layer and the second ferromagnetic layer and including at least one of FeCoAl and FeCoAlCu, and a pair of electrodes configured to supply a current perpendicularly to a film plane of a stacked film including the first ferromagnetic layer, the intermediate layer, the alloy layer and the second ferromagnetic layer.

摘要翻译： 根据一个实施例，磁阻元件包括其磁化方向被钉扎的第一铁磁层，其磁化方向根据外部磁场而改变的第二铁磁层，布置在第一铁磁层和第二铁磁层之间的中间层 第二铁磁层，并且包括绝缘层和导电柱，在中间层中的导电柱和第二铁磁层之间形成并且包括FeCoAl和FeCoAlCu中的至少一种的合金层，以及一对电极， 垂直于包括第一铁磁层，中间层，合金层和第二铁磁层的层叠膜的膜平面的电流。

公开(公告)号：US08274765B2

公开(公告)日：2012-09-25

申请号：US12585623

申请日：2009-09-18

申请人： Hiromi Fuke ,  Susumu Hashimoto ,  Masayuki Takagishi ,  Hitoshi Iwasaki

发明人： Hiromi Fuke ,  Susumu Hashimoto ,  Masayuki Takagishi ,  Hitoshi Iwasaki

IPC分类号： G11B5/39

CPC分类号： C23C8/36 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/398 ,  G11B5/3983 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/08

摘要： A method of manufacturing a magnetoresistive element includes forming a metal layer on a first ferromagnetic layer, oxidizing the metal layer to form an oxide layer in which unoxidized metal is remained and a magnetic conduction column penetrating the oxide layer in a thickness direction and including at least a part of constituent elements of the first ferromagnetic layer, annealing a resultant structure at a higher temperature than a temperature at which the oxide layer is formed to convert at least a part of a periphery of the magnetic conduction column into a magnetic oxide including a part of constituent elements of the oxide layer and at least a part of constituent elements of the magnetic conduction column, and forming a second ferromagnetic layer.

摘要翻译： 一种制造磁阻元件的方法包括在第一铁磁层上形成金属层，氧化金属层以形成其中保留非氧化金属的氧化物层和在厚度方向上贯穿氧化物层的磁导柱，并且至少包括 第一铁磁层的构成元件的一部分，在比形成氧化物层的温度更高的温度下对所得结构进行退火，以将至少一部分导磁柱的周边转化成包括部分的磁性氧化物 的氧化物层的构成元素和磁导柱的构成元素的至少一部分，并形成第二铁磁层。

公开(公告)号：US20100079918A1

公开(公告)日：2010-04-01

申请号：US12585623

申请日：2009-09-18

申请人： Hiromi Fuke ,  Susumu Hashimoto ,  Masayuki Takagishi ,  Hitoshi Iwasaki

发明人： Hiromi Fuke ,  Susumu Hashimoto ,  Masayuki Takagishi ,  Hitoshi Iwasaki

IPC分类号： G11B5/33 ,  C23C8/10

CPC分类号： C23C8/36 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/398 ,  G11B5/3983 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/08

摘要： A method of manufacturing a magnetoresistive element includes forming a metal layer on a first ferromagnetic layer, oxidizing the metal layer to form an oxide layer in which unoxidized metal is remained and a magnetic conduction column penetrating the oxide layer in a thickness direction and including at least a part of constituent elements of the first ferromagnetic layer, annealing a resultant structure at a higher temperature than a temperature at which the oxide layer is formed to convert at least a part of a periphery of the magnetic conduction column into a magnetic oxide including a part of constituent elements of the oxide layer and at least a part of constituent elements of the magnetic conduction column, and forming a second ferromagnetic layer.

摘要翻译： 一种制造磁阻元件的方法包括在第一铁磁层上形成金属层，氧化金属层以形成其中保留非氧化金属的氧化物层和在厚度方向上贯穿氧化物层的磁导柱，并且至少包括 第一铁磁层的构成元件的一部分，在比形成氧化物层的温度更高的温度下对所得结构进行退火，以将至少一部分导磁柱的周边转化成包括部分的磁性氧化物 的氧化物层的构成元素和磁导柱的构成元素的至少一部分，并形成第二铁磁层。

公开(公告)号：US08764636B2

公开(公告)日：2014-07-01

申请号：US11916918

申请日：2006-04-27

申请人： Atsushi Shimada ,  Yusuke Yabe ,  Tomoya Takahashi ,  Susumu Hashimoto

发明人： Atsushi Shimada ,  Yusuke Yabe ,  Tomoya Takahashi ,  Susumu Hashimoto

IPC分类号： A61B1/00 ,  A61B1/04

CPC分类号： A61B1/00055 ,  A61B1/00006 ,  A61B1/00062 ,  A61B1/045 ,  A61B2560/0276 ,  G02B23/2484

摘要： An electronic endoscopic apparatus of the present invention can improve the usage efficiency of a circuit of a control section therein and can improve the reliability of operations of the circuit. The electronic endoscopic apparatus is an electronic endoscopic apparatus having multiple operation modes to be executed exclusively, the apparatus internally including an FPGA 1 that internally includes a CPU 10 and peripheral circuits and controls the execution of the operation modes and a switching request detecting section that detects a request for switching to the operation mode to be executed, wherein the internal configuration of the FPGA 1 is changed based on the detection result by the switching request detecting section.

摘要翻译： 本发明的电子内窥镜装置可以提高其中的控制部分的电路的使用效率，并且可以提高电路的操作的可靠性。 电子内窥镜装置是具有要独立执行的多种操作模式的电子内窥镜装置，该装置内部包括内部包括CPU 10和外围电路的FPGA 1，并控制操作模式的执行;以及切换请求检测部，其检测 切换要执行的操作模式的请求，其中基于切换请求检测部分的检测结果改变FPGA 1的内部配置。

公开(公告)号：US08041285B2

公开(公告)日：2011-10-18

申请号：US11851626

申请日：2007-09-07

申请人： Susumu Hashimoto ,  Toshiki Ohgita ,  Hidetoshi Kaneko ,  Masayuki Nagatani

发明人： Susumu Hashimoto ,  Toshiki Ohgita ,  Hidetoshi Kaneko ,  Masayuki Nagatani

IPC分类号： G03G15/00

CPC分类号： G03G15/6505 ,  G03G2221/1696

摘要： A paper feeding device includes a stacking plate for stacking sheets. The stacking plate is movable vertically within a range from a lower limit position to a pick-up position. The stacking plate has a first surface facing the lower limit position and a second surface facing the pick-up position. The paper feeding device also includes a driving device for driving the stacking plate. The paper feeding device has a locking member for locking the staking plate in the lower limit position. The locking member has a deformable section for contact with the second surface of the stacking plate. The deformable section becomes deformed by a driving force applied through the stacking plate as locked in the lower limit position by the driving device, to unlock the stacking plate.

摘要翻译： 送纸装置包括用于堆叠纸张的堆叠板。 堆叠板在从下限位置到拾取位置的范围内可垂直移动。 堆叠板具有面向下限位置的第一表面和面向拾取位置的第二表面。 送纸装置还包括用于驱动堆叠板的驱动装置。 供纸装置具有用于将定位板锁定在下限位置的锁定构件。 锁定构件具有用于与堆叠板的第二表面接触的可变形部分。 通过由驱动装置锁定在下限位置的通过堆叠板施加的驱动力，变形部分变形，以解锁堆叠板。