摘要:
A resist composition including a base component (A), which exhibits changed solubility in a developing solution under the action of acid and can be used in a lithography process that employs light having a wavelength of 193 nm or less as the exposure light source, an acid generator component (B) which generates acid upon exposure, and a polymeric compound (C) having a structural unit (c0) represented by general formula (c0) shown below, wherein the amount of the polymeric compound (C) is less than 25 parts by mass relative to 100 parts by mass of the base component (A). In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, and R1 represents an organic group having one or more primary or secondary alcoholic hydroxyl groups, or a chain-like tertiary alcoholic hydroxyl group.
摘要:
A resist composition that includes a base material component (A), which contains acid-dissociable, dissolution-inhibiting groups and exhibits increased alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), in which the components (A) and (B) are dissolved in the organic solvent (C), wherein the base material component (A) contains a protected form (A1) of a polyhydric phenol compound (a) having two or more phenolic hydroxyl groups and a molecular weight within a range from 300 to 2,500, in which either a portion of, or all of, the phenolic hydroxyl groups are protected with acid-dissociable, dissolution-inhibiting groups, and the organic solvent (C) comprises an alcohol.
摘要:
A compound including a polyhydric phenol compound represented by general formula (I) shown below (wherein R11 to R17 each independently represents an alkyl group of 1 to 10 carbon atoms or aromatic hydrocarbon group which may contain a hetero atom in the structure thereof, and X represents an aliphatic cyclic group) and having a molecular weight of 300 to 2,500, in which some or all of the hydrogen atoms of the phenolic hydroxyl groups are substituted with acid dissociable, dissolution inhibiting groups; a positive resist composition containing the compound; and a method of forming a resist pattern using the positive resist composition.
摘要:
A compound including a polyhydric phenol compound represented by general formula (I) shown below (wherein R11 to R17 each independently represents an alkyl group of 1 to 10 carbon atoms or aromatic hydrocarbon group which may contain a hetero atom in the structure thereof, and X represents an aliphatic cyclic group) and having a molecular weight of 300 to 2,500, in which some or all of the hydrogen atoms of the phenolic hydroxyl groups are substituted with acid dissociable, dissolution inhibiting groups; a positive resist composition containing the compound; and a method of forming a resist pattern using the positive resist composition.
摘要:
Disclosed are a compound that can be used for a resist composition, a positive resist composition that includes the compound, and a method for forming a resist pattern.Specifically disclosed is a compound represented by a formula (A-1). In the formula (A-1), R11 to R17 each represents an alkyl group or an aromatic hydrocarbon group; g and j each represents an integer of 1 or greater, and k and q each represents an integer of 0 or greater, provided that g+j+k+q is not greater than 5; b represents an integer of 1 or greater, and l and m each represents an integer of 0 or greater, provided that b+l+m is not greater than 4; c represents an integer of 1 or greater, and n and o each represents an integer of 0 or greater, provided that c+n+o is not greater than 4; A represents a trivalent aromatic cyclic group, alkyl group or aliphatic cyclic group, or a trivalent organic group having an aromatic cyclic group or an aliphatic cyclic group; and Z represents a group represented by a formula (z1). In the formula (z1), Y represents an alkylene group, a divalent aromatic hydrocarbon group or aliphatic cyclic group, or a divalent organic group having an aromatic hydrocarbon group or an aliphatic cyclic group; and R′ represents an acid dissociable, dissolution inhibiting group.
摘要:
The present invention provides a positive resist composition and a resist pattern forming method that are capable of forming a resist pattern with a reduced level of roughness. The positive resist composition includes the compound represented by the general formula (I) below. The present invention also provides the resist pattern forming method using the positive resist composition above. [wherein, in formula (I), R11 and R12 each represents, independently, an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, and may include a hetero atom in the structure thereof; R21 to R24 each represents, independently, a hydrogen atom or an acid dissociable, dissolution inhibiting group, and two of the R21 to R24 represents a hydrogen atom and the others represents an acid dissociable, dissolution inhibiting group; X is a group represented by general formulas (Ia) or (Ib) below].
摘要:
A positive resist composition includes a base material component (A) which exhibits increased alkali solubility under an action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the base material component (A) contains a compound (A1) in which phenolic hydroxyl groups in a polyhydric phenol compound (a) containing two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are protected with acid dissociable, dissolution inhibiting groups, and the compound (A1) exhibits a standard deviation (sn) of the number of protective groups per molecule of less than 1, or exhibits a standard deviation (sp) of a protection ratio (mol %) per molecule of less than 16.7.
摘要:
A positive resist composition that includes a base material component (A) that contains an acid-dissociable, dissolution-inhibiting group and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the base material component (A) contains a compound (A1), in which either a portion of, or all of, the hydrogen atoms of phenolic hydroxyl groups within a polyhydric phenol compound with a molecular weight of 300 to 2,500 represented by a general formula (I) shown below have been substituted with at least one group selected from the group consisting of acid-dissociable, dissolution-inhibiting groups represented by a general formula (II) shown below and acid-dissociable, dissolution-inhibiting groups represented by a general formula (III) shown below.
摘要:
A resist composition that includes a base material component (A), which contains acid-dissociable, dissolution-inhibiting groups and exhibits increased alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), in which the components (A) and (B) are dissolved in the organic solvent (C), wherein the base material component (A) contains a protected form (A1) of a polyhydric phenol compound (a) having two or more phenolic hydroxyl groups and a molecular weight within a range from 300 to 2,500, in which either a portion of, or all of, the phenolic hydroxyl groups are protected with acid-dissociable, dissolution-inhibiting groups, and the organic solvent (C) comprises an alcohol.
摘要:
A decomposable composition including a compound (I) represented by general formula (I) shown below and a compound (II) represented by general formula (II) shown below: [wherein R1 represents a hydrogen atom, a halogen atom, an alkyl group or a halogenated alkyl group; and R2, R3 and R4 each independently represents a monovalent organic group.]
摘要翻译:含有下述通式(I)表示的化合物(I)和下述通式(II)表示的化合物(II))的分解性组合物:[其中R 1表示氢原子, 卤素原子,烷基或卤代烷基; R 2,R 3和R 4各自独立地表示一价有机基团。