Cement admixture and method for producing the same
    61.
    发明授权
    Cement admixture and method for producing the same 有权
    水泥外加剂及其制造方法

    公开(公告)号:US07691921B2

    公开(公告)日:2010-04-06

    申请号:US11354284

    申请日:2006-02-13

    IPC分类号: C04B24/26

    摘要: The present invention is to provide a method for producing a copolymer for a cement admixture, which enables to easily produce a blend of a plurality of copolymers with different monomer compositions in one polymerization operation, and is superior in water reducing performance and/or slump retention ability. Disclosed is a method for producing a copolymer for a cement admixture, which comprises a step of polymerizing monomer components comprising unsaturated polyalkylene glycol ether-based monomer (A) and unsaturated organic acid-based monomer (B), wherein the unsaturated polyalkylene glycol ether-based monomer (A) is added into a reactor in advance and the unsaturated organic acid-based monomer (B) is added thereto with an addition rate thereof changed at least one time.

    摘要翻译: 本发明提供一种水泥掺混物的共聚物的制造方法,其能够在一个聚合操作中容易地制备具有不同单体组成的多种共聚物的共混物,并且具有优异的降水性能和/或坍落度保持率 能力。 本发明公开了一种水泥混合物共聚物的制造方法,其特征在于,包括使包含不饱和聚亚烷基二醇醚系单体(A)和不饱和有机酸系单体(B)的单体成分聚合的工序,其中不饱和聚亚烷基二醇醚 - 预先将反应性单体(A)加入到反应器中,并向其中加入不饱和有机酸类单体(B),添加速率至少改变一次。

    Non-volatile memory device
    62.
    发明授权
    Non-volatile memory device 失效
    非易失性存储器件

    公开(公告)号:US07349235B2

    公开(公告)日:2008-03-25

    申请号:US11381578

    申请日:2006-05-04

    IPC分类号: G11C5/08

    CPC分类号: G11C11/16

    摘要: A non-volatile memory device according to one embodiment includes a plurality of memory cells each comprising a magneto resistive element and a selection transistor, where the memory cells are arranged into a two dimensional array. A first interconnect line extends in a first direction of the memory array and functions as a gate electrode of a selection transistor included in each memory cell. A second interconnect line extends in the first direction of the memory array. A third interconnect line extends in a second direction. The magneto resistive element of at least some of the memory cells is sandwiched between the second and third interconnect lines.

    摘要翻译: 根据一个实施例的非易失性存储器件包括多个存储单元,每个存储单元包括磁阻元件和选择晶体管,其中存储单元被布置成二维阵列。 第一互连线在存储器阵列的第一方向上延伸,并且用作包含在每个存储单元中的选择晶体管的栅电极。 第二互连线在存储器阵列的第一方向上延伸。 第三互连线在第二方向上延伸。 至少一些存储单元的磁电阻元件夹在第二和第三互连线之间。

    Acrylic block copolymer and uses thereof
    63.
    发明申请
    Acrylic block copolymer and uses thereof 审中-公开
    丙烯酸嵌段共聚物及其用途

    公开(公告)号:US20050214529A1

    公开(公告)日:2005-09-29

    申请号:US11080553

    申请日:2005-03-16

    摘要: An object of the present invention is to provide an acrylic polymer which has little skin stimulating property, is excellent in balance between the adhesive strength and the cohesive strength without using a crosslinking agent, and is useful for a pressure-sensitive adhesive layer of a pressure-sensitive adhesive material to skin, a pressure-sensitive adhesive (containing the above polymer) for pressure-sensitive adhesion to skin, and a pressure-sensitive adhesive material to skin using the above pressure-sensitive adhesive. As a means of achieving this object, a polymer of the present invention is a star-shaped acrylic block copolymer obtained by polymerizing a polymerizable monomer in the presence of tri- or more-functional polyvalent mercaptan, wherein 50 to 100% by weight of a total structural unit of a polymer part is a (meth)acrylic acid alkyl ester structural part of a carbon number of 7 to 17, and an amount of remaining (meth)acrylic acid alkyl ester of a carbon number of 7 to 17 is 900 ppm or less relative to the total nonvolatile component content.

    摘要翻译: 本发明的目的是提供一种丙烯酸类聚合物,其具有很少的刺激性,在不使用交联剂的情况下,粘合强度和内聚强度之间的平衡优异,并且可用于压力的压敏粘合剂层 对皮肤的敏感性粘合剂材料,对皮肤的粘合性的粘合剂(含有上述聚合物)和使用上述压敏粘合剂的对皮肤的压敏粘合剂材料。 作为实现该目的的手段,本发明的聚合物是通过在三官能或多功能多价硫醇存在下聚合可聚合单体得到的星形丙烯酸嵌段共聚物,其中50至100重量% 聚合物部分的总结构单元是碳数为7〜17的(甲基)丙烯酸烷基酯结构部分,碳数为7〜17的剩余(甲基)丙烯酸烷基酯的量为900ppm 或更低。

    Multiple level (ML), integrated sector format (ISF), error correction code (ECC) encoding and decoding processes for data storage or communication devices and systems
    64.
    发明授权
    Multiple level (ML), integrated sector format (ISF), error correction code (ECC) encoding and decoding processes for data storage or communication devices and systems 失效
    用于数据存储或通信设备和系统的多级(ML),集成扇区格式(ISF),纠错码(ECC)编码和解码过程

    公开(公告)号:US06903887B2

    公开(公告)日:2005-06-07

    申请号:US10040115

    申请日:2002-01-03

    摘要: A method and an apparatus encodes and decodes blocks having a predetermined number of sectors of data bytes to detect and correct data bytes in error in each sector of a block. The method and the apparatus generates sector level check bytes for each sector in the block responsive to the data bytes in each sector according to a first level of an error correction code, and generates block level check bytes for a predetermined sector in the block responsive to the sector level check bytes of various sectors, including the predetermined sector, according to at least a second level of the error correction code. The method and apparatus processes the block to detect and correct data bytes in error in each sector within the capability of the sector level check bytes, to detect and correct data bytes in error in the at least two sectors that exceed the correction capability of the sector level check bytes but within the correction capability of the block level check bytes, or to indicate that the data bytes in error in the at least two sectors exceed the correction capability of each of the sector level check bytes and the block level check bytes. The method and apparatus improves signal quality for long streams of information having multiple sequential physical blocks of data bytes, such as audio visual information, with a low check byte overhead while being compatible with conventional 512 data byte sized sectors and conventional single sector error correction code processes.

    摘要翻译: 一种方法和装置对具有预定数量的数据字节扇区的块进行编码和解码以检测和校正块的每个扇区中的错误数据字节。 该方法和装置响应于每个扇区中的数据字节根据纠错码的第一级产生块中的每个扇区的扇区级检查字节,并响应于该块中的预定扇区生成块级校验字节 根据纠错码的至少第二级别,包括预定扇区的各个扇区的扇区级检查字节。 所述方法和装置处理该块以在扇区级检查字节的能力内检测和校正每个扇区中的错误数据字节,以检测并校正超过扇区校正能力的至少两个扇区中的错误数据字节 级别检查字节,但在块级检查字节的校正能力内,或指示至少两个扇区中的错误数据字节超过扇区级检查字节和块级校验字节中的每一级的校正能力。 该方法和装置改善具有数据字节的多个连续物理块的长信息流的信号质量,例如视听信息,具有低检查字节开销,同时与传统的512个数据字节大小的扇区兼容,并且传统的单扇区纠错码 过程。

    Non-volatile memory device
    65.
    发明申请
    Non-volatile memory device 失效
    非易失性存储器件

    公开(公告)号:US20050073897A1

    公开(公告)日:2005-04-07

    申请号:US10964352

    申请日:2004-10-12

    CPC分类号: G11C11/16

    摘要: MRAM has read word lines WLR and write word line WLW extending in the y direction, write/read bit line BLW/R and write bit line BLW extending in the x direction, and the memory cells MC disposed at the points of the intersection of these lines. The memory MC includes sub-cells SC1 and SC2. The sub-cell SC1 includes magneto resistive elements MTJ1 and MTJ2 and a selection transistor Tr1, and the sub-cell SC2 includes magneto resistive elements MTJ3 and MTJ4 and a selection transistor Tr2. The magneto resistive elements MTJ1 and MTJ2 are connected in parallel, and the magneto resistive elements MTJ3 and MTJ4 are also connected in parallel. Further, the sub-cells SC1 and SC2 are connected in series between the write/read bit line BLW/R and the ground.

    摘要翻译: MRAM具有在y方向上延伸的字线WLR和写入字线WLW,在x方向上延伸的写入/读取位线BLW / R和写入位线BLW,以及设置在这些交点处的存储单元MC 线条。 存储器MC包括子单元SC1和SC2。 子单元SC1包括磁阻元件MTJ1和MTJ2以及选择晶体管Tr1,子单元SC2包括磁阻元件MTJ3和MTJ4以及选择晶体管Tr2。 磁电阻元件MTJ1和MTJ2并联连接,磁电阻元件MTJ3和MTJ4也并联连接。 此外,子单元SC1和SC2串联连接在写/读位线BLW / R和地之间。

    MRAM and access method thereof
    67.
    发明授权
    MRAM and access method thereof 有权
    MRAM及其访问方法

    公开(公告)号:US06785154B2

    公开(公告)日:2004-08-31

    申请号:US10134100

    申请日:2002-04-26

    IPC分类号: G11C1700

    CPC分类号: G11C11/15 G11C2207/2263

    摘要: A magnetic random access memory (MRAM) circuit block and access method thereof are disclosed herein which includes a circuit for sensing a data write current passing through a bitline 32 and, for generating a stop signal for stopping a data write current supply to the bitline 32 and a write wordline 30 after data is written in an magnetic tunnel junction (MTJ) element 44. Further, when data to be written to the storage element is the same as the data already stored therein, no write current is supplied to the write wordline 30, thereby saving power.

    摘要翻译: 本文公开了磁性随机存取存储器(MRAM)电路块及其访问方法,其包括用于感测通过位线32的数据写入电流的电路,并且用于产生用于停止向位线32的数据写入电流供应的停止信号 以及数据写入磁性隧道结(MTJ)元件44之后的写入字线30.此外,当要写入存储元件的数据与已经存储的数据相同时,不向写入字线提供写入电流 30,从而节省电力。

    Method and apparatus for providing passed pointer detection in audio/video streams on disk media
    70.
    发明授权
    Method and apparatus for providing passed pointer detection in audio/video streams on disk media 失效
    用于在磁盘媒体上的音频/视频流中提供传递的指针检测的方法和装置

    公开(公告)号:US06553455B1

    公开(公告)日:2003-04-22

    申请号:US09670482

    申请日:2000-09-26

    IPC分类号: G06F1200

    摘要: A method and apparatus for providing passed pointer detection in audio/video streams on disk media. The present invention sets up an audio/video stream on a disk drive, uses read and write commands for accessing contiguous data and provides a pointer system that provides a warning when manipulating the pointers during fast forward and reverse functions that one pointer has passed the other. The position of a first pointer and a second pointer in at least one stream is monitored during a command execution. A determination is made when the positions of the first and second pointers cross to create a passed pointer state. An indicator is set to signal that a passed pointer state has occurred. The passed pointer indicator is then used to prevent anomalous behavior in processing of the at least one stream.

    摘要翻译: 一种用于在磁盘介质上的音频/视频流中提供经过指针检测的方法和装置。 本发明在磁盘驱动器上设置音频/视频流,使用读取和写入命令来访问连续的数据,并且提供指针系统,当在一个指针已经通过另一个指针的快进和反向功能期间操纵指针时提供警告 。 在命令执行期间监视第一指针和第二指针在至少一个流中的位置。 当第一和第二指针的位置交叉以创建传递的指针状态时,确定。 一个指示符被设置为发出传递的指针状态已经发生。 然后,传递的指针指示符用于防止至少一个流的处理中的异常行为。