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198 条记录 (耗时 0.068 秒)

    Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
    63.
    发明授权
    Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement 失效
    使用表面激活等离子体浸入离子注入的晶体硅晶片转移方法，用于晶片到晶片粘附增强

    公开(公告)号：US07183177B2

    公开(公告)日：2007-02-27

    申请号：US10989993

    申请日：2004-11-16

    申请人： Amir Al-Bayati ,  Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

    发明人： Amir Al-Bayati ,  Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

    IPC分类号： H01L21/46 ,  H01L21/30

    CPC分类号： H01L21/76254 ,  C23C14/48 ,  C23C16/507 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32412 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/6659

    摘要： A method of fabricating a semiconductor-on-insulator structure from a pair of semiconductor wafers, includes forming an oxide layer on at least a first surface of a first one of the wafers and performing a bonding enhancement implantation step by ion implantation of a first species in the first surface of at least either of the pair of wafers. The method further includes performing a cleavage ion implantation step on one of the pair of wafers by ion implanting a second species to define a cleavage plane across a diameter of the wafer at the predetermined depth below the top surface of the one wafer. The wafers are then bonded together by placing the first surfaces of the pair of wafers onto one another so as to form an semiconductor-on-insulator structure. The method also includes separating the one wafer along the cleavage plane so as to remove a portion of the one wafer between the second surface and the cleavage plane, whereby to form an exposed cleaved surface of a remaining portion of the one wafer on the semiconductor-on-insulator structure. Finally, the cleaved surface is smoothed, preferably by carrying out a low energy high momentum ion implantation step.

    摘要翻译： 一种从一对半导体晶片制造绝缘体上半导体结构的方法包括在第一晶片的至少第一表面上形成氧化物层，并通过离子注入第一种类进行结合增强注入步骤 在所述一对晶片中的至少一个的第一表面中。 所述方法还包括通过离子注入第二种类来在所述一对晶片之一上执行切割离子注入步骤，以在所述晶片的顶部表面下方的预定深度处限定跨所述晶片的直径的解理面。 然后通过将一对晶片的第一表面放置在彼此上而将晶片结合在一起，以形成绝缘体上半导体结构。 该方法还包括沿着解理平面分离一个晶片，以便去除第二表面和解理面之间的一个晶片的一部分，从而形成半导体芯片上的一个晶片的剩余部分的暴露的切割表面， 绝缘体上的结构。 最后，优选通过进行低能量的高动量离子注入步骤来平滑切割的表面。

    Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
    65.
    发明授权
    Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage 失效
    等离子体浸入式离子注入装置，其包括具有低离解性和低最小等离子体电压的等离子体源

    公开(公告)号：US07137354B2

    公开(公告)日：2006-11-21

    申请号：US10646458

    申请日：2003-08-22

    申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

    发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

    IPC分类号： G23C16/00 ,  C23F1/00

    CPC分类号： H01J37/32082 ,  H01J37/321

    摘要： A plasma immersion ion implantation reactor for ion implanting a species into a surface layer of a workpiece includes an enclosure which has a side wall and a ceiling defining a chamber and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceiling and defining a process region extending generally across the wafer support pedestal and confined laterally by the side wall and axially between the workpiece support pedestal and the ceiling. The enclosure has at least a first pair of openings at generally opposite sides of the process region and a first hollow conduit outside of the chamber having first and second ends connected to respective ones of the first pair of openings, so as to provide a first reentrant path extending through the conduit and across said process region. A gas distribution apparatus is provided on or near an interior surface of the reactor for introducing a process gas containing the species to be ion implanted and a first RE plasma source power applicator for generating a plasma in the chamber.

    摘要翻译： 用于将物质离子注入到工件的表面层中的等离子体浸没离子注入反应器包括具有侧壁和限定腔室的天花板的壳体，以及腔室内的工件支撑基座，其具有面向天花板的工件支撑表面并且限定 大致横跨晶片支撑基座延伸并由侧壁横向限制并且在工件支撑基座和天花板之间轴向延伸的过程区域。 外壳在工艺区域的大致相对侧具有至少第一对开口，在腔室外部具有第一和第二端，第一和第二端连接到第一对开口中的相应开口，以便提供第一凹槽 路径延伸穿过导管并穿过所述过程区域。 气体分配装置设置在反应器的内表面上或附近，用于引入含有要离子注入的物质的处理气体和用于在室中产生等离子体的第一RE等离子体源功率施加器。

    Apparatus for VHF impedance match tuning
    66.
    发明授权
    Apparatus for VHF impedance match tuning 失效
    VHF阻抗匹配调谐装置

    公开(公告)号：US08578879B2

    公开(公告)日：2013-11-12

    申请号：US12511377

    申请日：2009-07-29

    申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Kenneth S. Collins ,  Lawrence Wong ,  Samer Banna ,  Andrew Nguyen

    发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Kenneth S. Collins ,  Lawrence Wong ,  Samer Banna ,  Andrew Nguyen

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01P7/04 ,  H01P7/06

    CPC分类号： H01P7/04

    摘要： Embodiments of impedance matching networks are provided herein. In some embodiments, an impedance matching network may include a coaxial resonator having an inner and an outer conductor. A tuning capacitor may be provided for variably controlling a resonance frequency of the coaxial resonator. The tuning capacitor may be formed by a first tuning electrode and a second tuning electrode and an intervening dielectric, wherein the first tuning electrode is formed by a portion of the inner conductor. A load capacitor may be provided for variably coupling energy from the inner conductor to a load. The load capacitor may be formed by the inner conductor, an adjustable load electrode, and an intervening dielectric.

    摘要翻译： 本文提供了阻抗匹配网络的实施例。 在一些实施例中，阻抗匹配网络可以包括具有内部和外部导体的同轴谐振器。 可以提供调谐电容器以可变地控制同轴谐振器的谐振频率。 调谐电容器可以由第一调谐电极和第二调谐电极和中间电介质形成，其中第一调谐电极由内部导体的一部分形成。 可以提供负载电容器，用于可变地耦合从内部导体到负载的能量。 负载电容器可以由内部导体，可调负载电极和中间电介质形成。

    RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
    68.
    发明授权
    RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor 有权
    RF测量反馈控制和等离子体浸入式离子注入反应器的诊断

    公开(公告)号：US07666464B2

    公开(公告)日：2010-02-23

    申请号：US10971772

    申请日：2004-10-23

    申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Andrew Nguyen ,  Biagio Gallo

    发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Andrew Nguyen ,  Biagio Gallo

    IPC分类号： C23C14/48 ,  C23C14/54 ,  C23C16/52 ,  C23C16/505

    CPC分类号： H01J37/321 ,  C23C14/48 ,  C23C14/54 ,  H01J37/32412 ,  H01J37/32935

    摘要： A method of measuring ion dose in a plasma immersion ion implantation reactor during ion implantation of a selected species into a workpiece includes placing the workpiece on a pedestal in the reactor and feeding into the reactor a process gas comprising a species to be implanted into the workpiece, and then coupling RF plasma source power to a plasma in the reactor. It further includes coupling RF bias power to the workpiece by an RF bias power generator that is coupled to the workpiece through a bias feedpoint of the reactor and measuring RF current at the feedpoint to generate a current-related value, and then integrating the current-related over time to produce an ion implantation dose-related value.

    摘要翻译： 在将所选择的物质离子注入工件期间测量等离子体浸入式离子注入反应器中的离子剂量的方法包括将工件放置在反应器中的基座上，并将反应器中的工件气体进料到反应器中， ，然后将RF等离子体源功率耦合到反应器中的等离子体。 它还包括通过RF偏置功率发生器将RF偏置功率耦合到工件，该RF偏置功率发生器通过电抗器的偏置馈电点耦合到工件，并且在馈电点处测量RF电流以产生电流相关值， 随着时间的推移产生离子注入剂量相关值。

    O-ringless tandem throttle valve for a plasma reactor chamber
    69.
    发明授权
    O-ringless tandem throttle valve for a plasma reactor chamber 失效
    用于等离子体反应室的O型无环式串联节流阀

    公开(公告)号：US07428915B2

    公开(公告)日：2008-09-30

    申请号：US11115956

    申请日：2005-04-26

    申请人： Andrew Nguyen ,  Hiroji Hanawa ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Biagio Gallo

    发明人： Andrew Nguyen ,  Hiroji Hanawa ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Biagio Gallo

    IPC分类号： F16K11/052

    CPC分类号： F16K1/526 ,  F16K1/22 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T137/87531

    摘要： A valve system having high maximum gas flow rate and fine control of gas flow rate, includes a valve housing for blocking gas flow through a gas flow path, a large area opening through said housing having a first arcuate side wall and a small area opening through said housing having a second arcuate side wall, and respective large area and small area rotatable valve flaps in said large area and small area openings, respectively, and having arcuate edges congruent with said first and second arcuate side walls, respectively and defining therebetween respective first and second valve gaps. The first and second valve gaps are sufficiently small to block flow of a gas on one side of said valve housing up to a predetermined pressure limit, thereby obviating any need for O-rings.

    摘要翻译： 具有高的最大气体流量和气体流量的精细控制的阀门系统包括用于阻止气体流过气体流路的阀壳体，通过所述壳体的大面积开口具有第一弧形侧壁和小区域开口 所述壳体分别具有第二弧形侧壁和分别在所述大面积和小面积开口中的相应的大面积和小面积的可旋转阀瓣，并且分别具有与所述第一和第二弧形侧壁一致的弓形边缘，并且在其间限定各自的第一 和第二阀间隙。 第一和第二阀间隙足够小以阻止气体在所述阀壳体的一侧上的流动直到预定的压力极限，从而避免了对O形环的任何需要。