Method for forming dot element
    61.
    发明授权
    Method for forming dot element 失效
    形成点元素的方法

    公开(公告)号:US06303516B1

    公开(公告)日:2001-10-16

    申请号:US09208753

    申请日:1998-12-10

    IPC分类号: H01L2146

    摘要: A Rat IgG antibody film, formed on a p-type Si substrate, is selectively irradiated with ultraviolet rays, thereby leaving part of the Rat IgG antibody film, except for a region deactivated with the ultraviolet rays. Next, when the p-type Si substrate is immersed in a solution containing Au fine particles that have been combined with a Rat IgG antigen, the Rat IgG antigen is selectively combined with the Rat IgG antibody film. As a result, Au fine particles, combined with the Rat IgG antigen, are fixed on the Rat IgG antibody film. Thereafter, the p-type Si substrate is placed within oxygen plasma for 20 minutes, thereby removing the Rat IgG antibody film, the deactivated Rat IgG antibody film and the Rat IgG antigen. Consequently, dot elements can be formed at desired positions on the p-type Si substrate. If these dot elements are used for the floating gate of a semiconductor memory device, then the device has a structure suitable for miniaturization.

    摘要翻译: 在p型Si衬底上形成的大鼠IgG抗体膜被紫外线选择性照射,除了用紫外线去活化的区域外,还剩下部分IgG抗体。 接下来,当将p型Si衬底浸入含有与大鼠IgG抗原组合的Au微粒的溶液中时,将大鼠IgG抗原与大鼠IgG抗体膜选择性组合。 结果,将Au细粒与大鼠IgG抗原组合,固定在大鼠IgG抗体膜上。 此后,将p型Si衬底置于氧等离子体中20分钟,从而除去大鼠IgG抗体膜,失活的大鼠IgG抗体膜和大鼠IgG抗原。 因此,可以在p型Si衬底上的期望位置形成点元件。 如果这些点元件用于半导体存储器件的浮动栅极,则该器件具有适于小型化的结构。

    Method for producing quantization functional device
    62.
    发明授权
    Method for producing quantization functional device 有权
    量化功能装置的制造方法

    公开(公告)号:US6103583A

    公开(公告)日:2000-08-15

    申请号:US370005

    申请日:1999-08-06

    摘要: A quantization functional device includes: a silicon thin layer having a first surface and a second surface each made of a predetermined crystal surface, and the silicon thin layer being formed of single crystalline silicon having a thickness sufficiently thin to function as a quantum well; a pair of tunnel barriers respectively provided on the first and second surfaces of the silicon thin layer; and a first electrode and a second electrode operatively coupled to each other and formed so as to interpose the silicon thin layer and the pair of the tunnel barriers therebetween.

    摘要翻译: 量化功能器件包括:具有由预定晶体表面制成的第一表面和第二表面的硅薄层,并且所述硅薄层由厚度足够薄以用作量子阱的单晶硅形成; 分别设置在所述硅薄层的所述第一表面和所述第二表面上的一对隧道屏障; 以及第一电极和第二电极,其可操作地彼此耦合并且形成为将硅薄层和所述一对隧道屏障插入其间。

    Developing solution for silver halide photographic material and method
for processing silver halide photographic material by using the same
    63.
    发明授权
    Developing solution for silver halide photographic material and method for processing silver halide photographic material by using the same 失效
    用于卤化银照相材料的显影液和使用该卤化银照相材料的卤化银照相材料的处理方法

    公开(公告)号:US6013423A

    公开(公告)日:2000-01-11

    申请号:US193641

    申请日:1994-02-07

    IPC分类号: G03C5/29

    CPC分类号: G03C5/29

    摘要: A developing solution for silver halide photographic material contains a six-membered heterocyclic compound having two nitrogen atoms as the constituent atoms of the six-membered ring and mercapto group, hydroxyl group and at least one substituent group other than hydrogen atom and a five-membered heterocyclic compound having two to three nitrogen atoms as the constituent atoms of the five-membered ring and at least one mercapto group. There is also disclosed a method for processing a silver halide photographic material with said developing solution.

    摘要翻译: 用于卤化银照相材料的显影液含有六元杂环化合物,其具有两个氮原子作为六元环和巯基,羟基和至少一个除氢原子以外的取代基的组成原子,并且五元 具有2至3个氮原子的杂环化合物作为五元环的组成原子和至少一个巯基。 还公开了一种用所述显影液处理卤化银照相材料的方法。

    Resonant electron transfer device
    68.
    发明授权
    Resonant electron transfer device 失效
    共振电子转移装置

    公开(公告)号:US5347140A

    公开(公告)日:1994-09-13

    申请号:US935988

    申请日:1992-08-27

    IPC分类号: H01L29/768 H01L29/88

    摘要: A resonant electron transfer device includes a plurality of units each of which has of at least one one-dimensional quantum wire having a quantum well elongated in a direction, a zero-dimensional quantum dot having a base quantization level higher than that of the one-dimensional quantum wire an electrode for controlling respective internal levels of the quantum wire and dot wherein the quantum wire and dot forming one unit is connected via a potential barrier capable of exhibiting a tunnel effect therebetween.

    摘要翻译: 共振电子转移装置包括多个单元,每个单元具有至少一个一维量子线,该量子线具有在一个方向上很长的量子阱,零量子点的基本量化级别高于单向量子线, 尺寸量子线,用于控制量子线和点的各个内部电平的电极,其中量子线和形成一个单元的点通过能够在其间呈现隧道效应的势垒连接。

    Method for processing silver halide color photographic material
    70.
    依法登记的发明
    Method for processing silver halide color photographic material 失效
    卤化银彩色照相材料的处理方法

    公开(公告)号:USH953H

    公开(公告)日:1991-08-06

    申请号:US389667

    申请日:1989-08-04

    IPC分类号: G03C7/42

    CPC分类号: G03C7/421

    摘要: A method for processing a silver halide color photographic material which comprises the steps of, after color-developing, processing the silver halide color photographic material with a bleaching bath, and then processing with a fixing bath, wherein the bleaching bath has a pH value of from 2.5 to 5.5 and contains a (1,3-diaminopropane-tetraacetato)iron(III) complex salt in an amount of at least 0.2 mol/liter and an organic acid in an amount of at least 0.5 mil/liter, and the fixing bath contains at least one compound selected from formulae (I), (II), (III), (IV), and (V):R.sup.1 --(X--R.sup.3).sub.m --X--R.sup.2 (I)wherein m represents 0 or an integer of from 1 to 4; R.sup.1 and R.sup.2 each represents a substituted or unsubstituted alkyl group; R.sup.3 represents a substituted or unsubstituted alkylene group, provided that when m is 2 or more, the R.sup.3 groups in each of the (X--R.sup.3) segments may be the same or different; and X represents sulfur, oxygen, ##STR1## wherein Z represents ##STR2## --OR.sup.15 or --SR.sup.16 ; R.sup.11, R.sup.12, R.sup.13, R.sup.14, R.sup.15 and R.sup.16 each represents an alkyl group, an alkenyl group, an aralkyl group, an aryl group or a heterocyclic group; and R.sup.11 and R.sup.12 ; R.sup.13 and R.sup.14 ; or R.sup.11 and R.sup.13 ; R.sup.11 and R.sup.15 ; or R.sup.11 and R.sup.16 may be bonded to each other to form a 5-membered or 6-membered hetero-ring; ##STR3## wherein A represents an alkylene group; R.sup.20 represents --NH.sub.2, --NHR.sup.21, ##STR4## --CONHR.sup.24, --OR.sup.24, --COOM, --COOR.sup.21, --SO.sub.2 NHR.sup.24, --NHCOR.sup.21 or --SO.sub.3 M; p represents 1 or 2; L represents --S.sup..crclbar. when R.sup.20 is ##STR5## and L represents --SM otherwise; R.sup.21, R.sup.22 and R.sup.23 each represents an alkyl group; R.sup.24 represents hydrogen or an alkyl group; and M represents hydrogen or a cation: ##STR6## wherein R.sup.31 represents a hydroxyl group, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, a heterocyclic group, an amino group, an acyloxy group or an alkyloxy group; R.sup.32 represents hydrogen, an alkyl group, a cycloalkyl group, an aryl group or a heterocyclic group; and R.sup.33 represents an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group or a heterocyclic group. ##STR7## wherein R.sub.41, R.sub.42, R.sub.43 and R.sub.44 each represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted aryl group or a substituted or unsubstituted heterocyclic group; or R.sub.41 and R.sub.42, or R.sub.43 and R.sub.44 may be bonded to each other to form a ring.