摘要:
A developing solution for silver halide photographic material contains a six-membered heterocyclic compound having two nitrogen atoms as the constituent atoms of the six-membered ring and mercapto group, hydroxyl group and at least one substituent group other than hydrogen atom and a five-membered heterocyclic compound having two to three nitrogen atoms as the constituent atoms of the five-membered ring and at least one mercapto group. There is also disclosed a method for processing a silver halide photographic material with said developing solution.
摘要:
Development of silver halide photosensitive material with a developer containing a developing agent and a free sulfite is accompanied by deposition of silver sludge. Silver sludge is effectively suppressed by adding to the developer (a) a six-membered heterocyclic compound which has a six-membered ring containing two nitrogen atoms and has a mercapto group, a hydroxyl group and one or two substituents having 2 to 20 carbon atoms in total or (a') a six-membered heterocyclic compound which has a six-membered ring containing three nitrogen atoms and has a mercapto group and a hydroxyl group.
摘要:
The invention provides a water-based ink composition for inkjet recording which contains vinyl polymer particles containing a styrene-acrylic acid copolymer in which the total content of the constitutional units derived from styrene monomer, acrylic acid, and methacrylic acid is 45% by mass or more; and at least one of an azo pigment represented by Formula (1), a tautomer thereof, a salt or hydrate thereof; and a water-based liquid medium, and which is excellent in discharge stability after a long-term storage or after aging at high temperatures: wherein, Q represents a heterocyclic group; W represents an alkoxy group, an amino group etc.; X1 and X2 each independently represent a hydrogen atom, an alkyl group etc.; R1 represents a hydrogen atom or a substituent; R2 represents a heterocyclic group; and n represents an integer of 1 to 4.
摘要:
A silver salt-containing layer containing a silver salt and provided on a support is exposed and developed to form a metal silver portion and a light-transmitting portion, and then the metal silver portion is further subjected to physical development and/or plating to form a conductive metal portion consisting of the metal silver portion carrying conductive metal particles. A method for producing a light-transmitting electromagnetic wave-shielding film which enables production of an electromagnetic wave-shielding material simultaneously having high EMI-shielding property and high transparency in a fine line pattern and also enables mass production of such films at a low cost, and a light-transmitting electromagnetic wave-shielding film obtained by the production method and free from the problem of moire are provided.
摘要:
A silver salt-containing layer containing a silver salt and provided on a support is exposed and developed to form a metal silver portion and a light-transmitting portion, and then the metal silver portion is further subjected to physical development and/or plating to form a conductive metal portion consisting of the metal silver portion carrying conductive metal particles. A method for producing a light-transmitting electromagnetic wave-shielding film which enables production of an electromagnetic wave-shielding material simultaneously having high EMI-shielding property and high transparency in a fine line pattern and also enables mass production of such films at a low cost, and a light-transmitting electromagnetic wave-shielding film obtained by the production method and free from the problem of moire are provided.
摘要:
A non-volatile memory (1) which comprises an insulating substrate (11) having a plurality of first electrodes (15) extending therethrough from a front surface of the substrate to a rear surface thereof, a second electrode (12) formed on one surface side of the substrate (11), and a recording layer (14) held between the first electrodes (15) and the second electrode (12) and variable in resistance value by electric pulses applied across the first electrodes (15) and the second electrode (12), the plurality of first electrodes (15) being electrically connected to the recording layer (14) in a region constituting a single memory cell (MC). The non-volatile memory (1) can be reduced in power consumption and has great freedom of design and high reliability.
摘要:
An ink unit comprising an ink for use in an ink jet recording apparatus; and a liquid-contacting member that contacts with the ink, wherein the ink comprises a phthalocyanine dye of a specific structure which has an oxidation potential of 1.0 V (vs SCE) or more, and wherein the major component of the ink-contacting member is a polyolefin containing [1] a specific hydrotalcite-like compound, [2] a fatty acid and/or fatty acid derivative, [3] a phenolic antioxidant having an isocyanurate skeleton or [4] an alkyl-substituted benzylidenesorbitol.
摘要:
A voltage generating circuit comprising a capacitor (4), a ferroelectric capacitor (6) serially connected to the capacitor (4), an output terminal (11), a capacitor (10) which grounds the output terminal (11), a supply voltage supplying terminal (13), a switch (1) which connects the supply voltage supplying terminal (13) and the connecting node (N1) of the two capacitors (4, 6), and a switch (9) which connects the connecting node (N1) and output terminal (11); wherein during a first period, with the two switches (1) and (9) placed in the OFF state, a terminal (3) is grounded and a terminal (7) is provided with a supply voltage; wherein during a second period, the terminal (3) is provided with the supply voltage and the switch (9) is placed in the ON state; wherein during a third period, the switch (9) is placed in the OFF state, the switch (1) is placed in the ON state, and the terminal (7) is grounded; wherein during a fourth period, the terminal (7) is provided with the supply voltage; and wherein thereafter the first through fourth periods are repeated.
摘要:
Non-volatile latch circuit 10 of the present invention comprises ferroelectric capacitor 1 provided with a first electrode 1a, second electrode 1b, and ferroelectric film 1c that lies between these electrodes; reset terminal Tre that is connected to first electrode 1a and a CMOS inverter element 2 that is connected to second electrode 1b of ferroelectric capacitor 1; voltage switching terminal Tpl that applies a voltage to second electrode 1b; switching element 5 that is connected between second electrode 1b and second input terminal Tpl and switches a voltage applied to second electrode 1b; and set terminal Tse that applies a voltage for switching on or off switching element 5, wherein the voltage generated in second electrode 1b caused by polarization retained by ferroelectric film 1c is higher than the threshold voltage Vtn of NMISFET 4 of CMOS inverter element 2.
摘要:
A potential generating circuit comprises a capacitor (4); a ferroelectric capacitor (6) connected in series to the capacitor (4); an output terminal (11); a capacitor (10) for grounding the output terminal (11); a switch (9) for connecting a connecting node (5) between the two capacitors (4, 6) to the output terminal (11); and a switch (1) for connecting the connecting node (5) to the ground; wherein during a first period, with the switches (1) and (9) placed in the OFF state, a terminal (3) is provided with a positive potential and a terminal (7) is grounded; wherein during a second period following the first period, the terminal (3) is grounded and the switch (9) is placed in the ON state; wherein during a third period following the second period, the switch (9) is placed in the OFF state, the switch (1) is placed in the ON state, and the terminal (7) is provided with a positive potential; wherein during a fourth period following the third period, the terminal (7) is grounded; and wherein the first through fourth periods are repeated.