公开(公告)号：US5562802A

公开(公告)日：1996-10-08

申请号：US419179

申请日：1995-04-10

申请人： Kenji Okada ,  Kiyoshi Morimoto ,  Masaharu Udagawa ,  Koichiro Yuki ,  Masaaki Niwa ,  Yoshihiko Hirai ,  Juro Yasui

发明人： Kenji Okada ,  Kiyoshi Morimoto ,  Masaharu Udagawa ,  Koichiro Yuki ,  Masaaki Niwa ,  Yoshihiko Hirai ,  Juro Yasui

IPC分类号： H01L29/06 ,  H01L21/334 ,  H01L29/10 ,  H01L29/68 ,  H01L29/772 ,  H01L29/88 ,  B44C1/22 ,  C03C15/00 ,  H01L29/161

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01L29/1037 ,  H01L29/66931 ,  H01L29/772 ,  H01L29/882 ,  Y10S438/911 ,  Y10S438/962

摘要： A quantum device including a plate-like conductor part having a necking portion and a method of producing the same are disclosed. The method includes the steps of forming a first mask layer having a first strip portion on a conductor substrate; forming a second mask layer having a second strip portion on the conductor substrate; etching a region of the conductor substrate which is not covered with the first and second mask layers, by using the first and second mask layers as an etching mask, to form a plurality of first recess portions on a surface of the conductor substrate; selectively covering side faces of the plurality of first recess portions, and side faces of the first and second mask layers with a side wall film; selectively removing only the second mask layer, the first mask layer and the side wall film being left unremoved; etching another region of the conductor substrate which is not covered with the first mask layer and the side wall film, by using the first mask layer and the side wall film as an etching mask, to form a plurality of second recess portions on the surface of the conductor substrate; selectively removing part of another region of the surface of the conductor substrate which is not covered with the first mask layer and the side wall film; and removing the first mask layer and the side wall film, to form the plate-like conductor part having the necking portion at the conductor substrate.

摘要翻译： 公开了一种包括具有颈缩部的板状导体部的量子装置及其制造方法。 该方法包括以下步骤：在导体基板上形成具有第一条带部分的第一掩模层; 在所述导体基板上形成具有第二带状部分的第二掩模层; 通过使用第一和第二掩模层作为蚀刻掩模蚀刻未被第一和第二掩模层覆盖的导体基板的区域，以在导体基板的表面上形成多个第一凹部; 选择性地覆盖所述多个第一凹部的侧面，所述第一和第二掩模层的侧面具有侧壁膜; 仅选择性地除去第二掩模层，第一掩模层和侧壁膜不被去除; 通过使用第一掩模层和侧壁膜作为蚀刻掩模蚀刻未被第一掩模层和侧壁膜覆盖的导体基板的另一区域，以在第一掩模层和侧壁膜的表面上形成多个第二凹部 导体基板; 选择性地去除未被第一掩模层和侧壁膜覆盖的导体基板的表面的另一区域的一部分; 并且去除第一掩模层和侧壁膜，以在导体基板上形成具有颈缩部分的板状导体部分。

公开(公告)号：US5543351A

公开(公告)日：1996-08-06

申请号：US331733

申请日：1994-10-31

申请人： Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Yasuaki Terui ,  Masaaki Niwa ,  Juro Yasui ,  Kenji Okada ,  Masaharu Udagawa ,  Koichiro Yuki

发明人： Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Yasuaki Terui ,  Masaaki Niwa ,  Juro Yasui ,  Kenji Okada ,  Masaharu Udagawa ,  Koichiro Yuki

IPC分类号： H01L21/335 ,  H01L29/04 ,  H01L21/76

CPC分类号： B82Y10/00 ,  H01L29/045 ,  H01L29/66439 ,  Y10S438/962

摘要： A silicon substrate comprises at least two surfaces extending substantially along respective crystal faces of (111) crystal orientation of the silicon, the crystal faces of (111) crystal orientation crossing with each other, an electrically insulating layer formed by oxidizing the silicon substrate from the surfaces, and an electrically conductive portion insulated electrically by the electrically insulating layer from an outside of the silicon substrate.

摘要翻译： 硅衬底包括至少两个表面，所述至少两个表面基本上沿着硅的（111）晶体取向的晶面延伸，（111）晶体取向的晶面相互交叉，通过将硅衬底从 表面，以及由电绝缘层与硅衬底的外部电绝缘的导电部分。

公开(公告)号：US5480492A

公开(公告)日：1996-01-02

申请号：US136197

申请日：1993-10-15

申请人： Masaharu Udagawa ,  Juro Yasui ,  Masaaki Niwa ,  Yoshihiko Hirai ,  Kenji Okada ,  Kiyoshi Morimoto ,  Koichiro Yuki

发明人： Masaharu Udagawa ,  Juro Yasui ,  Masaaki Niwa ,  Yoshihiko Hirai ,  Kenji Okada ,  Kiyoshi Morimoto ,  Koichiro Yuki

IPC分类号： H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  C23G5/00 ,  B44C1/22

CPC分类号： H01L21/02046

摘要： For removing an unnecessary substance on a silicon substrate surface, a temperature of the unnecessary substance on the silicon substrate surface is not less than 750.degree. C. when the unnecessary substance is exposed to a gas including ozone.

摘要翻译： 为了除去硅衬底表面上的不需要的物质，当不需要的物质暴露于包括臭氧的气体时，硅衬底表面上的不必要物质的温度不低于750℃。

公开(公告)号：US5444267A

公开(公告)日：1995-08-22

申请号：US331270

申请日：1994-10-28

申请人： Kenji Okada ,  Kiyoshi Morimoto ,  Masaharu Udagawa ,  Koichiro Yuki ,  Masaaki Niwa ,  Yoshihiko Hirai ,  Juro Yasui

发明人： Kenji Okada ,  Kiyoshi Morimoto ,  Masaharu Udagawa ,  Koichiro Yuki ,  Masaaki Niwa ,  Yoshihiko Hirai ,  Juro Yasui

IPC分类号： H01L29/06 ,  H01L21/334 ,  H01L29/10 ,  H01L29/68 ,  H01L29/772 ,  H01L29/88 ,  H01L29/161

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01L29/1037 ,  H01L29/66931 ,  H01L29/772 ,  H01L29/882 ,  Y10S438/911 ,  Y10S438/962

摘要： A quantum device including a plate-like conductor part having a necking portion made by forming a first mask layer having a first strip portion on a conductor substrate; forming a second mask layer having a second strip portion on the conductor substrate; etching a region of the conductor substrate which is not covered with the first and second mask layers, by using the first and second mask layers as an etching mask, to form a plurality of first recess portions on a surface of the conductor substrate; selectively covering side faces of the plurality of first recess portions, and side faces of the first and second mask layers with a side wall film; selectively removing only the second mask layer; etching another region of the conductor substrate which is not covered with the first mask layer and the side wall film, by using the first mask layer and the side wall film as an etching mask, to form a plurality of second recess portions on the surface of the conductor substrate; selectively removing part of another region of the surface of the conductor substrate which is not covered with the first mask layer and the side wall film; and removing the first mask layer and the side wall film, to form the plate-like conductor part having the necking portion.

摘要翻译： 公开了一种包括具有颈缩部的板状导体部的量子装置及其制造方法。 该方法包括以下步骤：在导体基板上形成具有第一条带部分的第一掩模层; 在所述导体基板上形成具有第二条带部分的第二层; 通过使用第一和第二掩模层作为蚀刻掩模蚀刻未被第一和第二掩模层覆盖的导体基板的区域，以在导体基板的表面上形成多个第一凹部; 选择性地覆盖所述多个第一凹部的侧面，所述第一和第二掩模层的侧面具有侧壁膜; 选择性地除去第二掩模层，第一掩模层和侧壁膜被去除; 通过使用第一掩模层和侧壁膜作为蚀刻来蚀刻未被第一掩模层和侧壁膜覆盖的导体基板的另一区域，以在第一掩模层和侧壁膜的表面上形成多个第二凹部 基体; 选择性地去除未被第一掩模层和侧壁膜覆盖的导体基板的表面的另一区域的一部分; 并且去除第一掩模层和侧壁膜，以在导体基板上形成具有颈缩部分的板状导体部分。

公开(公告)号：US5486706A

公开(公告)日：1996-01-23

申请号：US249541

申请日：1994-05-26

申请人： Koichiro Yuki ,  Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Masaaki Niwa ,  Juro Yasui ,  Kenji Okada ,  Masaharu Udagawa

发明人： Koichiro Yuki ,  Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Masaaki Niwa ,  Juro Yasui ,  Kenji Okada ,  Masaharu Udagawa

IPC分类号： H01L21/329 ,  H01L29/04 ,  H01L29/76 ,  H01L29/88 ,  H01L31/036

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L29/045 ,  H01L29/66151 ,  H01L29/7606 ,  H01L29/882 ,  Y10S438/962 ,  Y10S438/979

摘要： By etching, a first groove and a second groove are formed in a silicon substrate. Surfaces of the side walls of these grooves have a surface orientation of (111). The first and second grooves sandwich a silicon thin plate therebetween, which is formed as a part of the silicon substrate. The silicon thin plate is sufficiently thin so as to act as a quantum well. Further, a pair of silicon oxide films acting as tunneling barriers are formed on the surfaces of the side walls of the silicon thin plate, thus forming a double barrier structure. In addition, a pair of polysilicon electrodes are formed and sandwich the double barrier structure. As a result, the structure of a resonance tunneling diode, which utilizes the resonance tunneling effect, is provided. Adding a third electrode to the above structure provides a hot electron transistor. In the quantization functional devices having the above-described configuration, the satisfactory resonance effect is obtained due to a high crystallinity of the quantum well, a high potential barrier brought by the high quality silicon oxide films used as the tunneling barriers and a smooth interface between the quantum well and the tunneling barriers.

摘要翻译： 通过蚀刻，在硅衬底中形成第一凹槽和第二凹槽。 这些凹槽的侧壁的表面具有（111）的表面取向。 第一和第二沟槽夹在其间的硅薄板，其形成为硅衬底的一部分。 硅薄板足够薄，以作为量子阱。 此外，在硅薄板的侧壁的表面上形成用作隧道势垒的一对氧化硅膜，从而形成双重阻挡结构。 此外，形成一对多晶硅电极并夹着双重阻挡结构。 结果，提供了利用谐振隧穿效应的共振隧道二极管的结构。 向上述结构添加第三电极提供热电子晶体管。 在具有上述结构的量子化功能器件中，由于量子阱的高结晶度，由用作隧道势垒的高质量氧化硅膜引起的高电位势垒和由于量子阱的高结晶度而产生令人满意的共振效应， 量子阱和隧道势垒。

公开(公告)号：US5739544A

公开(公告)日：1998-04-14

申请号：US571112

申请日：1995-12-12

申请人： Koichiro Yuki ,  Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Masaaki Niwa ,  Juro Yasui ,  Kenji Okada ,  Masaharu Udagawa ,  Kiyoyuki Morita

发明人： Koichiro Yuki ,  Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Masaaki Niwa ,  Juro Yasui ,  Kenji Okada ,  Masaharu Udagawa ,  Kiyoyuki Morita

IPC分类号： H01L21/329 ,  H01L29/04 ,  H01L29/76 ,  H01L29/88 ,  H01L29/78

CPC分类号： B82Y10/00 ,  H01L29/045 ,  H01L29/66151 ,  H01L29/7606 ,  H01L29/882

摘要： By etching, a first groove and a second groove are formed in a silicon substrate. Surfaces of the side walls of these grooves have a surface orientation of (111). The first and second grooves sandwich a silicon thin plate therebetween, which is formed as a part of the silicon substrate. The silicon thin plate is sufficiently thin so as to act as a quantum well. Further, a pair of silicon oxide films acting as tunneling barriers are formed on the surfaces of the side walls of the silicon thin plate, thus forming a double barrier structure. In addition, a pair of polysilicon electrodes are formed and sandwich the double barrier structure. As a result, the structure of a resonance tunneling diode, which utilizes the resonance tunneling effect, is provided. Adding a third electrode to the above structure provides a resonance tunneling transistor.

摘要翻译： 通过蚀刻，在硅衬底中形成第一凹槽和第二凹槽。 这些凹槽的侧壁的表面具有（111）的表面取向。 第一和第二沟槽夹在其间的硅薄板，其形成为硅衬底的一部分。 硅薄板足够薄，以作为量子阱。 此外，在硅薄板的侧壁的表面上形成用作隧道势垒的一对氧化硅膜，从而形成双重阻挡结构。 此外，形成一对多晶硅电极并夹着双重阻挡结构。 结果，提供了利用谐振隧穿效应的共振隧道二极管的结构。 向上述结构添加第三电极提供谐振隧穿晶体管。

公开(公告)号：US5405454A

公开(公告)日：1995-04-11

申请号：US30556

申请日：1993-03-12

申请人： Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Yasuaki Terui ,  Masaaki Niwa ,  Juro Yasui ,  Kenji Okada ,  Masaharu Udagawa ,  Koichiro Yuki

发明人： Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Yasuaki Terui ,  Masaaki Niwa ,  Juro Yasui ,  Kenji Okada ,  Masaharu Udagawa ,  Koichiro Yuki

IPC分类号： H01L21/335 ,  H01L29/04 ,  H01L29/30

CPC分类号： B82Y10/00 ,  H01L29/045 ,  H01L29/66439 ,  Y10S438/962

摘要： A silicon substrate comprises, at least two surfaces extending substantially along respective crystal faces of (111) crystal orientation of the silicon, the crystal faces of (111) crystal orientation crossing with each other, an electrically insulating layer formed by oxidizing the silicon substrate from the surfaces, and an electrically conductive portion insulated electrically by the electrically insulating layer from an outside of the silicon substrate.

摘要翻译： 硅衬底包括至少两个表面，其基本上沿着硅的（111）晶体取向的晶面延伸，（111）晶体取向的晶面相互交叉，通过将硅衬底氧化从而形成的电绝缘层 表面和由电绝缘层与硅衬底的外部电绝缘的导电部分。

公开(公告)号：US5514614A

公开(公告)日：1996-05-07

申请号：US421530

申请日：1995-04-13

申请人： Koichiro Yuki ,  Yoshihiko Hirai ,  Koyoshi Morimoto ,  Masaaki Niwa ,  Juro Yasui ,  Kenji Okada ,  Masaharu Udagawa

发明人： Koichiro Yuki ,  Yoshihiko Hirai ,  Koyoshi Morimoto ,  Masaaki Niwa ,  Juro Yasui ,  Kenji Okada ,  Masaharu Udagawa

IPC分类号： H01L21/329 ,  H01L29/04 ,  H01L29/76 ,  H01L29/88 ,  H01L21/328

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L29/045 ,  H01L29/66151 ,  H01L29/7606 ,  H01L29/882 ,  Y10S438/962 ,  Y10S438/979

摘要： By etching, a first groove and a second groove are formed in a silicon substrate. Surfaces of the side walls of these grooves have a surface orientation of (111). The first and second grooves sandwich a silicon thin plate therebetween, which is formed as a part of the silicon substrate. The silicon thin plate is sufficiently thin so as to act as a quantum well. Further, a pair of silicon oxide films acting as tunneling barriers are formed on the surfaces of the side walls of the silicon thin plate, thus forming a double barrier structure. In addition, a pair of polysilicon electrodes are formed and sandwich the double barrier structure. As a result, the structure of a resonance tunneling diode, which utilizes the resonance tunneling effect, is provided. Adding a third electrode to the above structure provides a hot electron transistor. In the quantization functional devices having the above-described configuration, the satisfactory resonance effect is obtained due to a high crystallinity of the quantum well, a high potential barrier brought by the high quality silicon oxide films used as the tunneling barriers and a smooth interface between the quantum well and the tunneling barriers.

摘要翻译： 通过蚀刻，在硅衬底中形成第一凹槽和第二凹槽。 这些凹槽的侧壁的表面具有（111）的表面取向。 第一和第二沟槽夹在其间的硅薄板，其形成为硅衬底的一部分。 硅薄板足够薄，以作为量子阱。 此外，在硅薄板的侧壁的表面上形成用作隧道势垒的一对氧化硅膜，从而形成双重阻挡结构。 此外，形成一对多晶硅电极并夹着双重阻挡结构。 结果，提供了利用谐振隧穿效应的共振隧道二极管的结构。 向上述结构添加第三电极提供热电子晶体管。 在具有上述结构的量子化功能器件中，由于量子阱的高结晶度，由用作隧道势垒的高质量氧化硅膜引起的高电位势垒和由于量子阱的高结晶度而产生令人满意的共振效应， 量子阱和隧道势垒。

公开(公告)号：US5244828A

公开(公告)日：1993-09-14

申请号：US934953

申请日：1992-08-25

申请人： Kenji Okada ,  Yasuaki Terui ,  Juro Yasui ,  Yoshihiko Hirai ,  Masaaki Niwa ,  Atsuo Wada ,  Kiyoshi Morimoto

发明人： Kenji Okada ,  Yasuaki Terui ,  Juro Yasui ,  Yoshihiko Hirai ,  Masaaki Niwa ,  Atsuo Wada ,  Kiyoshi Morimoto

IPC分类号： H01L29/06 ,  H01L21/20 ,  H01L21/335 ,  H01L27/12 ,  H01L29/12

CPC分类号： B82Y10/00 ,  H01L21/2026 ,  H01L27/1203 ,  H01L29/125 ,  H01L29/127 ,  H01L29/66439 ,  Y10S438/962

摘要： The method of fabricating a quantum device of the invention includes the steps of: forming a quantum dot having side faces on a first insulating layer; forming a second insulating layer which can function as a tunnel film, on at least the side faces of the quantum dot; depositing a non-crystal semiconductor layer on the first insulating layer so as to cover the quantum dot; removing at least a portion of the non-crystal semiconductor layer which is positioned above the quantum dot; single-crystallizing a predetermined portion of the non-crystal semiconductor layer which is in contact with the second insulating layer; and forming a quantum wire which includes the single-crystallized semiconductor portion and the quantum dot, on the first insulating layer.

摘要翻译： 制造本发明的量子器件的方法包括以下步骤：在第一绝缘层上形成具有侧面的量子点; 至少在量子点的侧面上形成可用作隧道膜的第二绝缘层; 在第一绝缘层上沉积非晶半导体层以覆盖量子点; 去除位于量子点上方的非晶半导体层的至少一部分; 单晶化与第二绝缘层接触的非晶半导体层的预定部分; 以及在所述第一绝缘层上形成包括所述单结晶半导体部分和所述量子点的量子线。

公开(公告)号：US5347140A

公开(公告)日：1994-09-13

申请号：US935988

申请日：1992-08-27

申请人： Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Yasuaki Terui ,  Atsuo Wada ,  Kenji Okada ,  Juro Yasui ,  Masaaki Niwa

发明人： Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Yasuaki Terui ,  Atsuo Wada ,  Kenji Okada ,  Juro Yasui ,  Masaaki Niwa

IPC分类号： H01L29/768 ,  H01L29/88

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L29/768

摘要： A resonant electron transfer device includes a plurality of units each of which has of at least one one-dimensional quantum wire having a quantum well elongated in a direction, a zero-dimensional quantum dot having a base quantization level higher than that of the one-dimensional quantum wire an electrode for controlling respective internal levels of the quantum wire and dot wherein the quantum wire and dot forming one unit is connected via a potential barrier capable of exhibiting a tunnel effect therebetween.

摘要翻译： 共振电子转移装置包括多个单元，每个单元具有至少一个一维量子线，该量子线具有在一个方向上很长的量子阱，零量子点的基本量化级别高于单向量子线， 尺寸量子线，用于控制量子线和点的各个内部电平的电极，其中量子线和形成一个单元的点通过能够在其间呈现隧道效应的势垒连接。