Abstract:
A rigid-flexible board and a method for manufacturing the same can be provided, whereby the material yield ratio can be enhanced and the productive yield can be also enhanced. A rigid board with a step for connection and a flexible board with a connector at the edge thereof are formed independently. Then, the connecting area is spot facing processed so that the depth of the thus obtained depressed portion is equal to or lower than the thickness of the flexible board. The connector of the flexible board is electrically connected to the vertical wiring area of the depressed portion.
Abstract:
A sheet plasma film forming apparatus includes: a pressure reducing container; a plasma gun; an anode; plasma flowing means; a sheet plasma converting chamber as part of the pressure reducing container; a pair of permanent magnets which forms a sheet-shaped plasma; and a film forming chamber as a part of the pressure reducing container. The pressure reducing container includes first and second bottle neck portions that are openings of the film forming chamber formed such that the plasma flows from the sheet plasma converting chamber through the first bottle neck portion to the film forming chamber, and the flown sheet-shaped plasma flows through the second bottle neck portion to the anode. In the thickness direction of the sheet-shaped plasma, a size of the first and second bottle neck portions is smaller than an internal size of the film forming chamber.
Abstract:
A π gate FinFET structure having reduced variations in off-current and parasitic capacitance and a method for production thereof are provided. The structure of an element is improved so that an off-current suppressing capability can be exhibited more strongly. A field effect transistor, wherein a first insulating film and a semiconductor region are provided so as to protrude upward with respect to the flat surface of a base, the field effect transistor has a gate electrode, a gate insulating film and a source/drain region, and a channel is formed at least on the side surface of the semiconductor region, wherein that the first insulating film is provided on an etch stopper layer composed of a material having an etching rate lower than at least the lowermost layer of the first insulating film for etching under a predetermined condition.
Abstract:
A variation simulation system providing for facilitated circuit design with suppressed deterioration in performance otherwise caused by variations. A variation analysis unit 100 extracts statistical features of variations from a large number of samples beforehand. A model analysis unit 200 checks response of a circuit simulation output to parameter variations. A fitting execution unit 300 collates the information, obtained in this manner, to each other to determine the manner of variations of the parameters which will reproduce statistical features of the device samples.
Abstract:
There is provided a semiconductor device comprising an n-type and a p-type field effect transistors, meeting the conditions that in terms of a crystal orientation of the protruding semiconductor region constituting the n-type field effect transistor, its plane parallel to the substrate is substantially a {100} plane and its side surface is a {100} plane substantially orthogonal to the {100} plane, and that in terms of a crystal orientation of the protruding semiconductor region constituting the p-type field effect transistor, its plane parallel to the substrate is substantially a {100} plane and its side surface is a {110} plane substantially orthogonal to the {100} plane.
Abstract:
A yellow dye-forming coupler represented by formula (I): wherein Q represents a group of nonmetallic atoms that form a 5- to 7-membered ring in combination with the —N═C—N(R1)—; R1 and R2 each represent a substituent; R4 represents an alkyl group; m represents an integer of 0 to 4; and X represents a hydrogen atom, or a group capable of being split-off upon a coupling reaction with an oxidized product of a developing agent; and when R4 represents a primary alkyl group, R1 represents —(CH2)3O—R101 in which R101 is an alkyl group having 4 to 8 carbon atoms. A silver halide color photographic light-sensitive material having at least one yellow dye-forming coupler represented by formula (I) in at least one layer provided on a support.
Abstract:
A dye-forming coupler and compound of formula (I): wherein Q represents a residue that forms, together with —N—C═N—, a nitrogen-containing 6-membered ring; RA represents an aryl, heterocyclic, or —(R1)r—(R4)m group; X represents an aryl group; Y represents a hydrogen atom, or a group capable of being split-off upon a coupling reaction with an oxidized product of a developing agent: wherein, when RA represents an —(R1)r—(R4)m group, R1 represents a methylene group, a methine group, or a carbon atom; r is 1 to 30; R4 represents a substituent except for a hydrogen atom; m is 1 to 30; and the —(R1)r—(R4)m group does not represent a straight-chain alkyl group.
Abstract:
A silver halide color photographic light-sensitive material comprising at least one yellow color developable light-sensitive silver halide emulsion layer, at least one magenta color developable light-sensitive silver halide emulsion layer, and at least one cyan color developable light-sensitive silver halide emulsion layer, each of which is provided on a support: which comprises at least one yellow coupler of formula (I) and at least one cyan coupler of formula (A); wherein Q represents a group of non-metal atoms that form a 5- to 7-membered ring in combination with —N═C—N(R1)-, each of R1 and R2 represents a substituent, m represents an integer of 0 to 5, and X represents a hydrogen atom or a group capable of being split-off upon a coupling reaction; wherein R11 and R12 each represent an alkyl group or an aryl group, J represents an alkylene group, and X represents a hydrogen atom or a group that can split off upon a coupling reaction.
Abstract:
A dye-forming coupler of formula (I), a silver halide photographic light-sensitive material containing the coupler, and an azomethine dye that can be derived from the dye-forming coupler: wherein Q is a group —C(—R11)═C(—R12)—SO2—; R11 and R12 bond with each other to form, together with the —C═C— moiety, a 5- to 7-membered ring, or they each represent a hydrogen atom or a substituent; R1, R3 and R4 each represent a substituent; m is an integer of 0 to 4; and X represents a hydrogen atom or a group that splits off upon a coupling reaction with an oxidized product of a developing agent; with the proviso that the following compound (I-A) is excluded from the dye-forming coupler of formula (I).
Abstract translation:式(I)的染料形成成色剂,含有偶合剂的卤化银照相感光材料和可衍生自染料形成成色剂的偶氮甲碱染料:其中Q为基团-C(-R 11)= C( - R 12)-SO 2 - ; R 11和R 12彼此键合,与-C = C-部分一起形成5-至7-元环,或它们各自表示氢原子或取代基; R1,R3和R4各自表示取代基; m为0〜4的整数。 X表示氢原子或与显影剂的氧化物偶合反应时分裂的基团; 条件是从式(I)的染料形成成色剂除去下列化合物(I-A)。
Abstract:
A dye-forming coupler of formula (I): wherein Q represents a residue that forms, together with —N—C═N—, a nitrogen-containing 6-membered ring; RA represents an aryl, heterocyclic, or —(R1)r—(R4)m group; X represents an aryl group; Y represents a hydrogen atom, or a group capable of being split-off upon a coupling reaction with an oxidized product of a developing agent: wherein, when RA represents an —(R1)r—(R4)m group, R1 represents a methylene group, a methine group, or a carbon atom; r is 1 to 30; R4 represents a substituent except for a hydrogen atom; m is 1 to 30; and the —(R1)r—(R4)m group does not represent a straight-chain alkyl group. A silver halide photographic light-sensitive material which contains at least one of the coupler. An azomethine dye compound derived from the coupler.