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    Electrically rewriteable nonvolatile semiconductor memory device
    63.
    发明授权
    Electrically rewriteable nonvolatile semiconductor memory device 有权
    电可重写非易失性半导体存储器件

    公开(公告)号：US08976597B2

    公开(公告)日：2015-03-10

    申请号：US13227050

    申请日：2011-09-07

    申请人： Yasuhiro Shiino ,  Eietsu Takahashi ,  Koki Ueno

    发明人： Yasuhiro Shiino ,  Eietsu Takahashi ,  Koki Ueno

    IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C16/16 ,  G11C16/34

    CPC分类号： G11C16/16 ,  G11C16/3445 ,  G11C16/345

    摘要： A control circuit executes an erase operation that includes an erase pulse application operation and an erase verify operation. The erase pulse application operation applies an erase pulse voltage to a memory cell to change the memory cell from a write state to an erase state. The erase verify operation applies an erase verify voltage to the memory cell to judge whether the memory cell is in the erase state or not. The control circuit changes conditions of execution of the erase verify operation when the number of times of executions of the erase pulse application operation in one erase operation reaches a first number.

    摘要翻译： 控制电路执行包括擦除脉冲施加操作和擦除验证操作的擦除操作。 擦除脉冲施加操作将擦除脉冲电压施加到存储单元，以将存储单元从写入状态改变为擦除状态。 擦除验证操作将擦除验证电压施加到存储器单元以判断存储器单元是否处于擦除状态。 当在一个擦除操作中执行擦除脉冲施加操作的次数达到第一数量时，控制电路改变擦除验证操作的执行条件。

    VEHICLE SHIFT CONTROL DEVICE
    64.
    发明申请
    VEHICLE SHIFT CONTROL DEVICE 有权
    车辆换档控制装置

    公开(公告)号：US20130072350A1

    公开(公告)日：2013-03-21

    申请号：US13697087

    申请日：2010-05-11

    申请人： Koki Ueno ,  Keisuke Sekiya ,  Mitsuaki Ishimaru

    发明人： Koki Ueno ,  Keisuke Sekiya ,  Mitsuaki Ishimaru

    IPC分类号： B60W10/11

    CPC分类号： F16H63/483 ,  B60W10/11 ,  F16H59/44 ,  F16H59/54 ,  F16H63/48 ,  F16H2059/746 ,  Y10T477/68

    摘要： It is provided a vehicle shift control device electrically switching a shift position between a parking position and a non-parking position, the vehicle being capable of switching a vehicle state among a first state, a second state and a third state, when an operation for switching the vehicle state is performed in the first state, if a vehicle speed is a predetermined speed or less, switching is executed to the parking position and, after completion of the switching, the vehicle state is switched to the third state, whereas when plural-times of the operations are performed successively during the vehicle running, the vehicle state is compulsorily switched to the second state, and when at least one operation of the plural-times of the operations is performed if the vehicle speed is the predetermined speed or less, switching to the parking position is executed prior to switching to the second state.

    摘要翻译： 提供一种电动切换驻车位置与非停车位置之间的换档位置的车辆换挡控制装置，当车辆能够在第一状态，第二状态和第三状态下切换车辆状态时， 在第一状态下进行车辆状态的切换，如果车速为预定速度以下，则对停车位置进行切换，在切换结束后将车辆状态切换到第三状态，而当多个 在车辆行驶期间连续执行操作次数，车辆状态被强制切换到第二状态，并且当车速是预定速度或更小时进行多次操作的至少一次操作 在切换到第二状态之前执行切换到停车位置。

    SHIFT RANGE SWITCHING APPARATUS OF AUTOMATIC TRANSMISSION
    65.
    发明申请
    SHIFT RANGE SWITCHING APPARATUS OF AUTOMATIC TRANSMISSION 有权
    自动变速箱换档范围切换装置

    公开(公告)号：US20130024079A1

    公开(公告)日：2013-01-24

    申请号：US13639218

    申请日：2010-04-15

    申请人： Keisuke Sekiya ,  Koki Ueno ,  Mitsuaki Ishimaru

    发明人： Keisuke Sekiya ,  Koki Ueno ,  Mitsuaki Ishimaru

    IPC分类号： F16H61/02

    CPC分类号： F16H61/32 ,  F16H2061/283 ,  F16H2061/326

    摘要： Disclosed is a shift range switching apparatus of an automatic transmission which can improve the durability over the conventional shift range switching apparatus. An ECU is operative to rotate an actuator in a predetermined direction (Step S2) in the state of the automatic transmission switched to a predetermined shift range (Step S1), and thereafter the actuator is deenergized (Step S3). The reference position of the actuator corresponding to the predetermined shift range is detected (Step S5) in accordance with the fluctuation of the count value counted by an encoder when the actuator is deenergized (Step S4).

    摘要翻译： 公开了一种自动变速器的变速范围切换装置，其能够提高与常规变速范围开关装置的耐久性。 在自动变速器的状态切换到规定的变速范围（步骤S1）的情况下，ECU能够使致动器沿预定方向旋转（步骤S2），之后，致动器被断电（步骤S3）。 根据当致动器断电时由编码器计数的计数值的波动，检测对应于预定变速范围的致动器的基准位置（步骤S5）（步骤S4）。

    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME
    67.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME 审中-公开
    半导体存储器件及其控制方法

    公开(公告)号：US20120281487A1

    公开(公告)日：2012-11-08

    申请号：US13288485

    申请日：2011-11-03

    申请人： Manabu SAKANIWA ,  Koki Ueno ,  Shigefumi Irieda ,  Eietsu Takahashi ,  Yasuhiro Shiino

    发明人： Manabu SAKANIWA ,  Koki Ueno ,  Shigefumi Irieda ,  Eietsu Takahashi ,  Yasuhiro Shiino

    IPC分类号： G11C7/22

    CPC分类号： G11C16/10 ,  G11C16/0483

    摘要： According to one embodiment, a semiconductor memory device includes a memory cell array includes a plurality of memory cell units which are arranged at intersections of a plurality of bit lines and a plurality of word lines and whose current paths are connected in series, a voltage generator circuit which generates a voltage to be applied to the memory cell array, and a control circuit which controls the memory cell array and the voltage generator circuit. The control circuit, when writing data into the memory cell array, performs control so as to apply a first write pass voltage to unselected word lines in the memory cell units and, after a selected word line has reached a write voltage, further apply a voltage to the unselected word lines until a second write pass voltage higher than the first write pass voltage has been reached.

    摘要翻译： 根据一个实施例，一种半导体存储器件包括：存储单元阵列，包括布置在多个位线和多个字线的交点处并且其电流通路串联连接的多个存储单元单元;电压发生器 产生施加到存储单元阵列的电压的电路，以及控制存储单元阵列和电压发生器电路的控制电路。 控制电路在将数据写入存储单元阵列时进行控制，以对存储单元单元中的未选字线施加第一写入通过电压，并且在所选字线达到写入电压之后，进一步施加电压 到未选择的字线，直到达到高于第一写入通过电压的第二写入通过电压。

    SHIFTING CONTROL DEVICE FOR VEHICLE
    68.
    发明申请
    SHIFTING CONTROL DEVICE FOR VEHICLE 有权
    车辆换档控制装置

    公开(公告)号：US20120022754A1

    公开(公告)日：2012-01-26

    申请号：US13257638

    申请日：2010-03-03

    申请人： Koki Ueno

    发明人： Koki Ueno

    IPC分类号： F16H61/32 ,  F16H61/02

    CPC分类号： F16H63/3458 ,  F16H59/44 ,  F16H59/48 ,  F16H61/12 ,  F16H63/486 ,  F16H2059/446 ,  F16H2061/122 ,  F16H2061/1284 ,  F16H2312/12

    摘要： It is provided a shifting control device for vehicle for electrically controlling a switching of a transmission to a parking range for performing a parking lock in response to an operation by a driver, the shifting control device for vehicle configured to determine the switching to the parking range when the driver performs a predetermined operation for switching to the parking range, based on whether plural vehicle speed signals different in response relative to an actual vehicle speed satisfy a predetermined condition; and the switching to the parking range being determined (i) using a corrected value obtained by correcting a vehicle speed signal having a slower response such that a difference in a vehicle speed based on the vehicle speed signal having the slower response and a vehicle speed signal having a quicker response is suppressed, or (ii) using a corrected value obtained by correcting a predetermined vehicle-speed threshold value associated with the vehicle speed signal having the quicker response such that the slower the response of the vehicle signal having a slower response is, the larger is the corrected value than the corrected value associated with the vehicle speed signal having the quicker response.

    摘要翻译： 提供了一种用于车辆的变速控制装置，用于响应于驾驶员的操作而将变速器的电力控制切换到用于执行停车锁定的停车范围，车辆的变速控制装置被配置为确定切换到停车范围 当驾驶员根据相对于实际车速不同的多个车速信号是否满足预定条件，执行切换到停车范围的预定操作时; （i）使用通过校正具有较慢响应的车速信号而获得的校正值，使得基于具有较慢响应的车速信号的车辆速度差和车速信号 抑制更快的响应，或者（ii）使用通过校正与具有更快响应的车速信号相关联的预定车速阈值而获得的校正值，使得响应慢的车辆信号的响应越慢 校正值大于与具有更快响应的车速信号相关联的校正值。

    Nonvolatile semiconductor memory device which realizes “1” write operation by boosting channel potential
    69.
    发明授权
    Nonvolatile semiconductor memory device which realizes “1” write operation by boosting channel potential 失效
    通过提高通道电位实现“1”写操作的非易失性半导体存储器件

    公开(公告)号：US07952931B2

    公开(公告)日：2011-05-31

    申请号：US12132426

    申请日：2008-06-03

    申请人： Hiroyuki Nagashima ,  Koki Ueno

    发明人： Hiroyuki Nagashima ,  Koki Ueno

    IPC分类号： G11C11/34

    CPC分类号： G11C16/0483 ,  G11C16/10 ,  G11C16/12

    摘要： A nonvolatile semiconductor memory device includes a memory cell array having a plurality of cell units each including a preset number of memory cells and select gate transistors on drain and source sides. The nonvolatile semiconductor memory device includes a voltage control circuit to prevent occurrence of an erroneous write operation due to excessively high boost voltage of a channel when “1” is written into the memory cell.

    摘要翻译： 非易失性半导体存储器件包括具有多个单元单元的存储单元阵列，每个单元单元包括预设数量的存储单元和漏极和源极侧的选择栅极晶体管。 非易失性半导体存储器件包括电压控制电路，用于当“1”被写入存储器单元时，防止由于通道的过高的升压电压而导致的错误写入操作的发生。

    NAND FLASH MEMORY
    70.
    发明申请
    NAND FLASH MEMORY 审中-公开
    NAND闪存

    公开(公告)号：US20110007572A1

    公开(公告)日：2011-01-13

    申请号：US12723112

    申请日：2010-03-12

    申请人： Koki Ueno ,  Satoshi Uchiumi

    发明人： Koki Ueno ,  Satoshi Uchiumi

    IPC分类号： G11C16/06

    CPC分类号： G11C16/3459 ,  G11C11/5628 ,  G11C2211/5621

    摘要： A NAND flash memory has memory cell transistors which data is written into. If number of times the program operation has been executed is not equal to the prescribed upper limit number of times, then the program voltage is set so as to be raised by a first potential difference and then the program operation and the verify operation are executed again, andonly when the number of times of the program operation has become equal to a prescribed number of times being less than the upper limit number of times, the intermediate voltage is raised by a second potential difference and fixed.

    摘要翻译： NAND闪存具有写入数据的存储单元晶体管。 如果执行程序操作的次数不等于规定的上限次数，则将编程电压设定为升高第一电位差，然后再次执行程序运行和验证操作 ，并且只有当编程操作次数已经变得等于小于上限次数的规定次数时，中间电压被提高第二电位差并且固定。