Method of predicting internal gettering behavior in silicon substrates and storage medium storing program for predicting internal gettering behavior
    61.
    发明申请
    Method of predicting internal gettering behavior in silicon substrates and storage medium storing program for predicting internal gettering behavior 有权
    预测硅衬底内部吸气行为的方法和储存程序的储存介质预测内部吸气行为的方法

    公开(公告)号:US20090259448A1

    公开(公告)日:2009-10-15

    申请号:US11991044

    申请日:2006-06-05

    申请人: Kozo Nakamura

    发明人: Kozo Nakamura

    IPC分类号: G06G7/48

    摘要: Internal gettering behavior in a silicon substrate is predicted by using an arithmetic expression established among an initial iron contamination concentration Cini in the silicon substrate, a density N of oxygen precipitates, a radius R of the oxygen precipitates, internal gettering heat treatment temperature T, internal gettering heat treatment time t, and a concentration C(t) of iron (Fe) remaining in the silicon substrate after a heat treatment. In the prediction of internal gettering behavior in the silicon substrate, an arithmetic expression is added considering a process in which nuclei of a contaminant heavy metal silicide are generated on the surface of the oxygen precipitates, and a process in which the contaminant heavy metal is gettered by the oxygen precipitates having the contaminant heavy metal silicide nuclei generated on the surface thereof. This invention is also applicable for internal gettering of a contaminant heavy metal other than iron (Fe), such as copper (Cu), nickel (Ni) or the like.

    摘要翻译: 通过使用在硅衬底中的初始铁污染浓度Cini,氧沉淀物的密度N,氧沉淀物的半径R,内部吸气热处理温度T,内部吸收热处理温度T中建立的算术表达来预测硅衬底中的内部吸杂行为 吸热热处理时间t和热处理后残留在硅衬底中的铁(Fe)的浓度C(t)。 在硅衬底中的内部吸气行为的预测中,考虑到在氧沉淀物的表面上产生污染物重金属硅化物的核的过程以及污染物重金属被吸收的过程而加入算术表达式 通过在其表面上产生污染重金属硅化物核的氧沉淀物。 本发明也适用于除了铁(Fe)以外的污染物重金属如铜(Cu),镍(Ni)等的内部吸除。

    DISPLAY DEVICE
    62.
    发明申请
    DISPLAY DEVICE 有权
    显示设备

    公开(公告)号:US20090015770A1

    公开(公告)日:2009-01-15

    申请号:US12280729

    申请日:2006-12-28

    IPC分类号: G02F1/1335

    摘要: The present invention provides a transflective display device capable of reducing a difference in white balance between transmissive display and reflective display. The display device of the present invention is a transflective display device including three or more filters having different colors in a pixel, each of the three or more filters having different colors, including: a transmissive region for displaying an image by transmitting light from a backlight; and a reflective region for displaying an image by reflecting surrounding light, wherein, in the reflective region of at least one of a plurality of filters having different colors used for displaying white in reflective display, a light-reducing film which reduces an amount of at least light having a peak wavelength of a visible light transmission spectrum of the at least one of a plurality of filters is arranged, and the visible light transmission spectrum is measured using a standard light source D65.

    摘要翻译: 本发明提供一种能够减少透射显示和反射显示之间的白平衡差异的透反式显示装置。 本发明的显示装置是一种半透过型显示装置,其包括三个或更多个像素中具有不同颜色的滤光器的透反射显示装置,所述三个或更多个滤光器中的每一个具有不同的颜色,包括:用于通过透射来自背光的光来显示图像的透射区域 ; 以及反射区域,用于通过反射周围光来显示图像,其中在反射显示中用于显示白色的具有不同颜色的多个滤光片中的至少一个的反射区域中,减少膜的量的减光膜 布置具有多个滤光器中的至少一个的可见光透射光谱的峰值波长的最少光,并且使用标准光源D65测量可见光透射光谱。

    Multi-Primary Color Display Device and Liquid Crystal Display Device
    63.
    发明申请
    Multi-Primary Color Display Device and Liquid Crystal Display Device 有权
    多原色显示装置和液晶显示装置

    公开(公告)号:US20080316235A1

    公开(公告)日:2008-12-25

    申请号:US11573752

    申请日:2005-08-10

    IPC分类号: G09G5/02

    CPC分类号: G02F1/133514 G02F2201/52

    摘要: A display device which exhibits functional effects in which color separation between sub-pixels constituting a pixel is hardly recognized and white line display is easily recognized as one line, in enlargement of the color reproduction range in image display using multi-primary colors, and thereby improves display quality, and provides a liquid crystal display device including such a display device. The display device displays an image constituted by pixels each including sub-pixels of four or more colors, wherein the pixels constituting the display device mainly include a pixel arranging a sub-pixel of a color having the highest brightness value in a central region of the pixel.

    摘要翻译: 表现出功能效果的显示装置,其中几乎不识别构成像素的子像素之间的颜色分离,并且白线显示容易地被识别为一行,在使用多原色的图像显示中放大彩色再现范围,从而 提高显示质量,提供包括这种显示装置的液晶显示装置。 显示装置显示由包括四种或更多种颜色的子像素的像素构成的图像,其中构成显示装置的像素主要包括排列具有最高亮度值的颜色的子像素的像素, 像素。

    Navigation apparatus for receiving delivered information
    64.
    发明授权
    Navigation apparatus for receiving delivered information 有权
    用于接收传送信息的导航装置

    公开(公告)号:US07383127B2

    公开(公告)日:2008-06-03

    申请号:US11238979

    申请日:2005-09-30

    IPC分类号: G01C21/32

    摘要: In a communication-type navigation system for downloading map data according to the present invention, a reduction in the amount of map information to be transferred, correction of a position measured by a GPS, and delivery of advertisements are effected. In this system, a terminal 5 stores rough map data in advance. Then, when detailed map data is required, it is downloaded from a map data delivery center to the terminal 5. Further, together with the map data, GPS correction information is delivered to the terminal 5 from the map data delivery center 80. Still further, coupon information associated with an advertisement is displayed and an electronic mail on the coupon information is issued, by the map data delivery center.

    摘要翻译: 在根据本发明的用于下载地图数据的通信型导航系统中,实现要传送的地图信息的量的减少,由GPS测量的位置的校正以及广告的传送。 在该系统中,终端5预先存储粗略地图数据。 然后,当需要详细的地图数据时,将其从地图数据传送中心下载到终端5。 此外,与地图数据一起,GPS校正信息从地图数据发布中心80传送到终端5。 此外,通过地图数据发布中心显示与广告相关联的优惠券信息,并且发行优惠券信息上的电子邮件。

    Display and device including same
    65.
    发明申请

    公开(公告)号:US20070236632A1

    公开(公告)日:2007-10-11

    申请号:US11806566

    申请日:2007-06-01

    IPC分类号: G02F1/1335

    摘要: A double-sided display which can suitable carry out black display both in a well-lighted place and a dark place is provided. The following members are disposed in the B direction: a first polarizing plate (14) which allows only a linearly polarized light component to pass through; a liquid crystal layer (13) which, when a voltage is applied thereto, optically rotates and causes linearly polarized light in one direction to be linearly polarized light in the other direction, while, when no voltage is applied, does not alter the direction of the linearly polarized light; a polarizing selective reflector (16) which reflects the linearly polarized light in one direction while allows the linearly polarized light in the other direction to pass through; and a second polarizing plate (15) which absorbs the light in one direction while allows the light in the other direction to pass through. The polarizing selective reflector (16) is disposed only in the B direction of the liquid crystal layer (13). Double-sided image reproduction is realized by carrying out reflective image reproduction on the side in the A direction and carrying out transmission image reproduction on the side in the B direction.

    Process for producing single-crystal semiconductor and apparatus for producing single-crystal semiconductor
    66.
    发明授权
    Process for producing single-crystal semiconductor and apparatus for producing single-crystal semiconductor 有权
    单晶半导体的制造方法及单晶半导体的制造装置

    公开(公告)号:US07235128B2

    公开(公告)日:2007-06-26

    申请号:US11005180

    申请日:2004-12-06

    IPC分类号: C30B15/20

    摘要: A process for producing a single-crystal semiconductor and an apparatus therefor. A single-crystal semiconductor of large diameter and large weight can be lifted with the use of existing equipment not having any substantial change thereto while not influencing the oxygen concentration of single-crystal semiconductor and the temperature of melt and while not unduly raising the temperature of seed crystal. In particular, the relationship (L1, L2, L3) between the allowable temperature difference (ΔT) and the diameter (D) of seed crystal (14) is preset so that the temperature difference between the seed crystal (14) at the time the seed crystal (14) is immersed in the melt and the melt (5) falls within the allowable temperature difference (ΔT) at which dislocations are not introduced into the seed crystal (14). In accordance with the relationship (L1, L2, L3), the allowable temperature difference (ΔT) corresponding to the diameter (D) of seed crystal (14) to be immersed in the melt is determined. Temperature control is conducted so that at the time the seed crystal (14) is immersed in the melt (5) the temperature difference between the seed crystal (14) and the melt (5) falls within the determined allowable temperature difference (ΔT).

    摘要翻译: 一种单晶半导体的制造方法及其装置。 可以使用不具有任何显着变化的现有设备来提升大直径和大重量的单晶半导体,同时不影响单晶半导体的氧浓度和熔体的温度,同时不会过度地提高温度 晶种。 特别地,预设晶种(14)的允许温差(DeltaT)和直径(D)之间的关系(L 1,L 2,L 3),使得晶种(14)在 籽晶(14)浸入熔体中的时间和熔体(5)落入未被引入到晶种(14)中的位错的允许温度差(DeltaT)之内。 根据关系(L 1,L 2,L 3),确定与浸入熔体中的晶种(14)的直径(D)相对应的容许温度差(DeltaT)。 进行温度控制,使晶种(14)浸入熔融物(5)中时晶种(14)和熔体(5)之间的温度差落在确定的允许温差(DeltaT)之内。

    DISPLAY DEVICE AND COLOR FILTER SUBSTRATE
    67.
    发明申请
    DISPLAY DEVICE AND COLOR FILTER SUBSTRATE 有权
    显示设备和彩色滤光片基板

    公开(公告)号:US20070063946A1

    公开(公告)日:2007-03-22

    申请号:US11533392

    申请日:2006-09-20

    IPC分类号: G09G3/36

    摘要: A display device includes a pixel defined by a plurality of subpixels. The plurality of subpixels include: first and second red subpixels for displaying red; a green subpixel for displaying green; a blue subpixel for displaying blue; and a yellow subpixel for displaying yellow.

    摘要翻译: 显示装置包括由多个子像素限定的像素。 多个子像素包括:用于显示红色的第一和第二红色子像素; 用于显示绿色的绿色子像素; 用于显示蓝色的蓝色子像素 和黄色子像素显示黄色。

    Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon crystal wafer
    68.
    发明授权
    Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon crystal wafer 有权
    单晶硅的制造方法和单晶锭的制造装置以及硅晶片的热处理方法

    公开(公告)号:US07141113B1

    公开(公告)日:2006-11-28

    申请号:US09856212

    申请日:1999-11-19

    IPC分类号: C30B33/02

    摘要: A method for growing a silicon crystal by a Czochralsky method, wherein, let a pulling speed be V (mm/min) and an average value of an in-crystal temperature gradient in a pulling axis direction within a temperature range, a silicon melting point to 1350° C., be G (° C./mm), V/G ranges from 0.16 to 0.18 mm2/° C. min between a crystal center position and a crystal outer periphery position, and a ratio G outer/G center of an average value G of an in-crystal temperature gradient in a pulling axis direction within a temperature range, a silicon melting point to 1350° C., at a crystal outer surface to that at a crystal center is set to up to 1.10 to thereby obtain a high-quality perfect crystal silicon wafer. Such a perfect crystal silicon wafer, wherein an oxygen concentration is controlled to up to 13×1017 atoms/cm3, an initial heat treatment temperature is at least up to 500° C. and a temperature is raised at up to 1° C./min at least within 700 to 900° C., thereby making uniform a wafer radial distribution to an arbitrary oxygen precipitation density level.

    摘要翻译: 一种通过切克劳斯基法生长硅晶体的方法,其中,拉伸速度为V(mm / min),拉伸轴方向的晶体内温度梯度的平均值在温度范围内,硅熔点 至1350℃,为G(℃/ mm),V / G在晶体中心位置和晶体外周位置之间的范围为0.16至0.18mm 2 /℃, 以及在温度范围内的牵引轴方向的晶体内温度梯度的平均值G的比G外部/ G中心,硅熔点为1350℃,晶体外表面与晶体的晶体温度梯度 中心设置为1.10,从而获得高质量的完美晶体硅晶片。 这种完美的晶体硅晶片,其中氧浓度被控制到高达13×10 17原子/ cm 3,初始热处理温度至少高达500℃ 并且在至少在700至900℃之间将温度升至高达1℃/分钟,从而使得晶片的径向分布均匀到任意的氧析出浓度水平。