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5368 条记录 (耗时 0.036 秒)

    Semiconductor device
    61.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US5247191A

    公开(公告)日：1993-09-21

    申请号：US739333

    申请日：1991-08-01

    申请人： Shunpei Yamazaki ,  Akira Mase

    发明人： Shunpei Yamazaki ,  Akira Mase

    IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/3205 ,  H01L21/74 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L23/522 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

    CPC分类号： H01L27/12 ,  G02F1/1368 ,  H01L21/743 ,  G02F2001/136245

    摘要： A semiconductor device. A depression is formed in an insulating portion of a substrate and an electric lead is formed in the depression so that at least a portion of the electric lead is buried in the substrate. A semiconductor device is formed on the substrate and connected to the electric lead. The electric lead may be an extension of a source electrode, a drain electrode, or a gate electrode of the semiconductor device. Also, a gate electrode, a source electrode, or a drain electrode may be buried in a substrate.

    摘要翻译： 半导体器件。 凹陷形成在基板的绝缘部分中，并且在凹陷中形成电引线，使得至少一部分电引线被埋在基板中。 半导体器件形成在衬底上并连接到电引线。 电引线可以是半导体器件的源电极，漏电极或栅电极的延伸。 此外，栅电极，源电极或漏电极可以埋在衬底中。

    Power conserving driver circuit for liquid crystal displays
    62.
    发明授权
    Power conserving driver circuit for liquid crystal displays 失效
    省电液晶显示驱动电路

    公开(公告)号：US5181131A

    公开(公告)日：1993-01-19

    申请号：US812034

    申请日：1991-12-23

    申请人： Shunpei Yamazaki ,  Akira Mase

    发明人： Shunpei Yamazaki ,  Akira Mase

    IPC分类号： G09G3/36

    CPC分类号： G09G3/3629 ,  G09G2330/021

    摘要： A driving circuit for a non-volatile liquid crystal display conserves battery power by applying a first set of electric fields to the display through an electrode array for a defined period of time, and then removing these fields for a second, longer period of time. The display picture produced by he first set of fields continues to be displayed during the second period when the fields are removed, due to the non-volatile characteristic of the liquid crystal layer. The circuit then applies a second set of electric fields to the display to change the picture produced.

    摘要翻译： 用于非挥发性液晶显示器的驱动电路通过在定义的时间段内通过电极阵列向显示器施加第一组电场来节省电池功率，然后在第二较长时间段内去除这些场。 由于液晶层的非易失性特性，由第一组场产生的显示画面在场除去的第二时段期间继续显示。 电路然后将第二组电场施加到显示器上以改变所产生的图像。

    Liquid crystal device having asymmetrical opposed contiguous surfaces being driven by a unipolar driving source
    64.
    发明授权
    Liquid crystal device having asymmetrical opposed contiguous surfaces being driven by a unipolar driving source 失效
    具有由非对称驱动源驱动的不对称对流表面的液晶装置

    公开(公告)号：US5069531A

    公开(公告)日：1991-12-03

    申请号：US385927

    申请日：1989-07-27

    申请人： Shunpei Yamazaki ,  Toshimitsu Konuma ,  Toshiji Hamatani ,  Akira Mase ,  Toshiharu Yamaguchi ,  Mitsunori Sakama ,  Takashi Inujima

    发明人： Shunpei Yamazaki ,  Toshimitsu Konuma ,  Toshiji Hamatani ,  Akira Mase ,  Toshiharu Yamaguchi ,  Mitsunori Sakama ,  Takashi Inujima

    IPC分类号： G02F1/1333

    CPC分类号： G02F1/133345

    摘要： A liquid crystal device including a unipolar driving source; a pair of substrates, at least one of which is transparent; a chiral smectic liquid crystal layer interposed between the substrates; and an electrode arrangement provided in order to apply an electric field normal to the liquid crystal layer, wherein the opposed inner surfaces of the substrates contiguous to the chiral smectic liquid crystal layer are formed of different materials having different surface energies such that upon application of the unipolar voltage to the chiral smectic liquid crystal, the chiral smectic liquid crystal molecules will be placed in a first state and upon removal of the unipolar voltage, the liquid crystal molecules will be returned to a second state.

    摘要翻译： 一种包括单极驱动源的液晶装置; 一对基板，其中至少一个是透明的; 介于基板之间的手性近晶液晶层; 以及设置用于施加与液晶层垂直的电场的电极装置，其中与手性近晶液晶层相邻的基板的相对的内表面由具有不同表面能的不同材料形成，使得在施加 对手性近晶液晶的单极电压，手性近晶液晶分子将被置于第一状态，并且在去除单极电压时，液晶分子将返回到第二状态。

    Method for fabricating a thin film semiconductor device
    68.
    发明授权
    Method for fabricating a thin film semiconductor device 失效
    薄膜半导体器件的制造方法

    公开(公告)号：US06004831A

    公开(公告)日：1999-12-21

    申请号：US862697

    申请日：1997-05-23

    申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Akira Mase ,  Hideki Uochi

    发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Akira Mase ,  Hideki Uochi

    IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/13 ,  H01L21/00 ,  H01L27/12

    CPC分类号： H01L29/66757 ,  H01L27/1255

    摘要： A thin-film semiconductor device or integrated circuit comprising an insulating substrate, TFTs (thin-film transistors) formed on the substrate, and multilayer conductive interconnections. The circuit has a first metallization layer becoming gate electrodes and gate interconnections. The surface of the first metallization layer is oxidized by anodic oxidation to form an insulating coating on the surface of the first metallization layer. A second metallization layer becoming source and drain electrodes or conductive interconnections is then formed on the insulating coating directly or via an interlayer insulator. An improvement in the production yield and improved reliability are accomplished.

    摘要翻译： 包括绝缘基板，形成在基板上的TFT（薄膜晶体管）和多层导电布线的薄膜半导体器件或集成电路。 该电路具有成为栅电极和栅极互连的第一金属化层。 通过阳极氧化将第一金属化层的表面氧化，以在第一金属化层的表面上形成绝缘涂层。 然后在绝缘涂层上直接或经由层间绝缘体形成成为源极和漏电极或导电互连的第二金属化层。 实现了产量的提高和可靠性的提高。

    Semiconductor device
    70.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US5495121A

    公开(公告)日：1996-02-27

    申请号：US953943

    申请日：1992-09-30

    申请人： Shunpei Yamazaki ,  Akira Mase ,  Hideki Uochi ,  Yasuhiko Takemura

    发明人： Shunpei Yamazaki ,  Akira Mase ,  Hideki Uochi ,  Yasuhiko Takemura

    IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L27/02

    CPC分类号： H01L29/66757 ,  H01L27/12 ,  H01L29/4908 ,  H01L29/78666 ,  H01L29/78675 ,  G02F1/13454 ,  G02F2001/136245

    摘要： A semiconductor device or a semiconductor integrated circuit includes a field effect transistor having a source region, a drain region and a channel regions formed within a semiconductor substrate. A lower wiring is formed on the semiconductor substrate to form a gate electrode and its extension and oxidized to form an oxide film covering the lower wiring. An upper wiring is formed over the lower wiring on the semiconductor substrate to make contact with the drain or source region. The lower wiring is electrically insulated from the upper wiring by the oxide film.

    摘要翻译： 半导体器件或半导体集成电路包括具有源极区，漏极区和形成在半导体衬底内的沟道区的场效应晶体管。 在半导体基板上形成下布线以形成栅电极，并且其延伸部被氧化以形成覆盖下布线的氧化膜。 在半导体衬底上的下布线之上形成上布线以与漏区或源区接触。 下布线通过氧化膜与上布线电绝缘。