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229 条记录 (耗时 0.028 秒)

    Substrate processing device and method
    61.
    发明授权
    Substrate processing device and method 有权

    公开(公告)号：US06610180B2

    公开(公告)日：2003-08-26

    申请号：US09917916

    申请日：2001-07-31

    申请人： Junro Sakai ,  Nobuyuki Takahashi

    发明人： Junro Sakai ,  Nobuyuki Takahashi

    IPC分类号： C23C1600

    CPC分类号： C23C14/505

    摘要： A substrate processing device is provided in which an interior rotating body for a substrate holder, provided in the interior of a vacuum chamber, and an external rotating body, provided in the exterior of said vacuum chamber, are magnetically coupled, and which includes a can-seal type magnetic coupling-type rotation introduction mechanism which, by the rotational movement of the abovementioned exterior rotating body, controls the rotational movement of the abovementioned interior rotating body. A heat-accumulating member, maintained at a predetermined temperature, and a device for performing heat exchange between the heat-accumulating member and the substrate holder, are provided in said vacuum chamber interior.

    Damping material, damping method and disc drive
    63.
    发明授权
    Damping material, damping method and disc drive 有权
    阻尼材料，阻尼方法和磁盘驱动器

    公开(公告)号：US06498700B2

    公开(公告)日：2002-12-24

    申请号：US09379612

    申请日：1999-08-24

    申请人： Nobuyuki Takahashi ,  Hideyuki Kitai ,  Kazumasa Tanaka ,  Manabu Matsunaga ,  Yasunori Sugihara

    发明人： Nobuyuki Takahashi ,  Hideyuki Kitai ,  Kazumasa Tanaka ,  Manabu Matsunaga ,  Yasunori Sugihara

    IPC分类号： G11B3308

    CPC分类号： F16F1/3605 ,  G11B33/08

    摘要： A damping material is made of a porous member having an absolute characteristic impedance value of not less than 800 kg/m2·S in the frequency range of from 1.0 to 3.0 kHz. A damping method has steps of providing a damping material in the interior or on the periphery of a vibration-generating apparatus, characterized in that as the damping material there is used a compressible porous member having an air permeability of from 1×{fraction (1/10)}10 to 2×{fraction (1/10)}2 cc/cm2/sec based on an atmospheric pressure difference of 2.039×{fraction (1/10)}4 mMH2O or a porous member having an absolute impedance value of not less than 800 kg/m2·S in a frequency range of from 1 to 3 kHz or one obtained by providing a film layer thereon. A disc drive has a motor for rotating a disc as a data recording medium and a damping material provided in the interior and/or on the periphery of a housing having at least a space in which the disc can be mounted.

    摘要翻译： 阻尼材料由1.0〜3.0kHz的频率范围内的绝对特性阻抗值为800kg / m 2·s以上的多孔构件构成。 阻尼方法具有在振动产生装置的内部或外围设置阻尼材料的步骤，其特征在于，作为阻尼材料，使用具有1×10 1/10 10至2×1 / 基于2.039×1 / 104mMH2O的大气压差或绝对阻抗值不低于800kg / m 2的多孔构件，在1〜3kHz的频率范围内为102cc / cm 2 / sec， 通过在其上设置膜层。 盘驱动器具有用于使作为数据记录介质的盘旋转的电动机和设置在至少具有可安装盘的空间的壳体的内部和/或周边的阻尼材料。

    Spill resistant keyboard
    64.
    发明授权
    Spill resistant keyboard 有权
    防溢键盘

    公开(公告)号：US06443644B1

    公开(公告)日：2002-09-03

    申请号：US09528309

    申请日：2000-03-17

    申请人： Toshisada Takeda ,  Nobuyuki Takahashi

    发明人： Toshisada Takeda ,  Nobuyuki Takahashi

    IPC分类号： H01H1370

    CPC分类号： G06F3/0202 ,  H01H3/122 ,  H01H13/70 ,  H01H2223/002 ,  H01H2223/004

    摘要： The present invention relates to a spill resistant keyboard including at least one conduit to permit a spilled liquid to drain through the keyboard without damaging the keyboard's electronics. The conduit is positioned along a sloped surface located along a front edge of a recessed area of the keyboard to promote the drainage of the spilled liquid through the conduit. The keyboard also includes water protection walls positioned around certain elongated keys prevent the spilled liquid from entering the body of the keyboard.

    摘要翻译： 本发明涉及一种防溢出键盘，其包括至少一个导管，以允许溢出的液体通过键盘排出而不损坏键盘的电子装置。 导管沿着沿着键盘的凹陷区域的前边缘定位的倾斜表面定位，以促进溢出的液体通过导管排出。 键盘还包括围绕某些细长键定位的防水墙，防止溢出的液体进入键盘的本体。

    Sputtering device and sputtering method
    66.
    发明授权
    Sputtering device and sputtering method 失效
    溅射装置和溅射法

    公开(公告)号：US6077403A

    公开(公告)日：2000-06-20

    申请号：US27217

    申请日：1998-02-20

    申请人： Masahiko Kobayashi ,  Nobuyuki Takahashi

    发明人： Masahiko Kobayashi ,  Nobuyuki Takahashi

    IPC分类号： C23C14/34 ,  C23C14/04 ,  C23C14/35 ,  H01J37/34 ,  H01L21/285 ,  H01L21/768

    CPC分类号： H01J37/3438 ,  C23C14/046 ,  C23C14/35 ,  H01J37/3405 ,  H01L21/2855 ,  H01L21/76877

    摘要： A sputtering device includes a chamber equipped with an exhaust system. A sputtering power source applies specific high frequency electric power to the target. A supplemental electrode is provided so that it surrounds the flight path of sputter particles between the target and a substrate. The supplemental electrode is either maintained at a floating potential so that it is capacitively coupled with the target to which high frequency electric power has been applied, in addition, high frequency electric power of the same frequency may be applied directly to the supplemental electrode. A plasma P' is formed on the inside of the supplemental electrode, and the sputter particles released from the target are ionized. An extraction-use electric field is set up by an electric field establishment means, and is directed perpendicularly to the substrate. This construction and its associated method allow a film to be formed with good bottom coverage on the inner surfaces of holes whose aspect ratio is over 4.

    摘要翻译： 溅射装置包括配备有排气系统的室。 溅射电源将特定的高频电力施加到目标。 提供补充电极，使得其围绕靶和衬底之间的溅射颗粒的飞行路径。 补充电极被保持在浮置电位，使得其与已经施加高频电力的目标电容耦合，此外，相同频率的高频电力可以直接施加到补充电极。 在补充电极的内侧形成有等离子体P'，从靶中释放的溅射粒子被离子化。 提取用电场由电场建立装置建立，并且垂直于基板。 该结构及其相关方法允许在纵横比高于4的孔的内表面上形成具有良好底部覆盖的膜。

    Sputtering apparatus
    67.
    发明授权
    Sputtering apparatus 失效
    溅射装置

    公开(公告)号：US6045672A

    公开(公告)日：2000-04-04

    申请号：US859093

    申请日：1997-05-20

    申请人： Masahiko Kobayashi ,  Nobuyuki Takahashi

    发明人： Masahiko Kobayashi ,  Nobuyuki Takahashi

    IPC分类号： C23C14/35 ,  H01J37/34 ,  H01L21/285

    CPC分类号： C23C14/35 ,  H01J37/3408

    摘要： A sputtering apparatus with improved bottom coverage ratio, is used in a film depositing step for manufacturing a semiconductor integrated circuit or the like. In the apparatus, arcuate leakage lines of magnetic force emerge from a magnet mechanism which is part of a cathode, and the lines of magnetic force are ranged into a circumferential shape so as to set a plurality of circumferential magnetic fields on the surface of a target. The plurality of circumferential magnetic fields form a plurality of erosion regions having a circumferential shape, without the regions crossing each other. When the diameter of the deepest erosion portion is small, the incident angle of sputter particles can be made small without increasing the target-to-substrate distance. Specifically, in a portion of the substrate on which sputter particles impinge at the largest incident angle from the deepest erosion portion of the erosion regions, the incident angle is smaller than that in the case of a single erosion region, thereby allowing an improved bottom coverage ratio of the fine holes in the substrate, while maintaining a required film deposition rate.

    摘要翻译： 具有改善的底部覆盖率的溅射装置用于制造半导体集成电路等的薄膜沉积步骤中。 在该装置中，磁力的弓形泄漏线从作为阴极的一部分的磁体机构出现，并且磁力线范围为周向形状，以便在目标的表面上设置多个圆周磁场 。 多个圆周磁场形成具有圆周形状的多个侵蚀区域，而不区域交叉。 当最深蚀刻部分的直径小时，可以使溅射粒子的入射角变小，而不增加目标对基板的距离。 具体地说，在溅射粒子以最大入侵角侵蚀侵蚀区域的最深侵蚀部分的基板的一部分上，入射角度小于单一侵蚀区域的入射角度，从而允许改进的底部覆盖 同时保持所需的膜沉积速率。

    Method of handling a substrate after sputtering and sputtering apparatus
    68.
    发明授权
    Method of handling a substrate after sputtering and sputtering apparatus 失效
    溅射和溅射装置处理基板的方法

    公开(公告)号：US6013162A

    公开(公告)日：2000-01-11

    申请号：US859720

    申请日：1997-05-21

    申请人： Masahiko Kobayashi ,  Nobuyuki Takahashi

    发明人： Masahiko Kobayashi ,  Nobuyuki Takahashi

    IPC分类号： C23C14/34 ,  C23C14/50 ,  C23C14/54 ,  C23C14/56 ,  C23C14/58

    CPC分类号： C23C14/58 ,  C23C14/541 ,  C23C14/566

    摘要： A substrate which has been heated to a predetermined temperature by a heating unit during sputtering is transferred into an unload-lock chamber having a vacuum pump system and a vent gas introducing system. The unload-lock chamber is provided with a cooling stage which makes surface contact with the substrate so as to forcedly cool the substrate to a predetermined temperature. The substrate is placed on the cooling stage and forcedly cooled. After the substrate is cooled to the predetermined temperature or lower, the vent gas introducing system is operated so that the interior of the unload-lock chamber is returned to the atmospheric pressure ambient. Since the substrate under a high temperature condition does not make contact with the atmospheric pressure ambient, film properties are prevented from being varied.

    摘要翻译： 在溅射期间通过加热单元被加热到预定温度的基板被转移到具有真空泵系统和排放气体引入系统的卸载锁定室中。 卸载锁定室设置有冷却台，其与基板表面接触，以将基板强制冷却至预定温度。 将基板放置在冷却台上并强制冷却。 在将基板冷却至预定温度或更低温度之后，排气引入系统被操作，使得卸载锁定室的内部返回到大气压环境。 由于在高温条件下的基板不与大气压环境接触，所以防止了膜性能的变化。