HYBRID CMOS IMAGE SENSOR WITH EVENT DRIVEN SENSING

    公开(公告)号:US20210344867A1

    公开(公告)日:2021-11-04

    申请号:US16862337

    申请日:2020-04-29

    Inventor: Zhe Gao Tiejun Dai

    Abstract: An image sensor includes a source follower coupled to a photodiode to generate an image signal responsive to photogenerated charge. The image signal is received by image readout circuitry through a row select transistor. A reset transistor resets the photogenerated charge. A first node of mode select circuit is coupled to the reset transistor, a second node is coupled to a pixel supply voltage, and a third node is coupled to an event driven circuit. The mode select circuit couples the first node to the second node during an imaging mode to supply the pixel supply voltage to the reset transistor. The mode select circuit is further configured to couple the first node to the third node during an event driven mode to couple a photocurrent of the photodiode to drive the event driven circuit through the reset transistor to detect changes in the photocurrent.

    SAMPLE AND HOLD SWITCH DRIVER CIRCUITRY WITH SLOPE CONTROL

    公开(公告)号:US20210021769A1

    公开(公告)日:2021-01-21

    申请号:US16516067

    申请日:2019-07-18

    Abstract: A switch driver circuit includes a first transistor coupled between a voltage supply and a first output node. A second transistor is coupled between the first output node and a first discharge node. A first slope control circuit is coupled to the first discharge node to discharge the first discharge node at a first slope. A third transistor is coupled between the voltage supply and a second output node. A fourth transistor is coupled between the second output node and a second discharge node. A second slope control circuit coupled to the second discharge node to discharge the second discharge node at a second slope. The first and second slopes are mismatched.

    Small pixels having dual conversion gain providing high dynamic range

    公开(公告)号:US10510796B1

    公开(公告)日:2019-12-17

    申请号:US16008434

    申请日:2018-06-14

    Abstract: A group of shared pixels comprises: a first shared pixel comprising a first photodiode and a first transfer gate; a second shared pixel comprising a second photodiode and a second transfer gate; a third shared pixel comprising a third photodiode and a third transfer gate; a fourth shared pixel comprising a fourth photodiode and a first transfer gate; a first floating diffusion shared by the first shared pixel and the second shared pixel; a second floating diffusion shared by the third shared pixel and the fourth shared pixel; a capacitor coupled to the first floating diffusion through a first dual conversion gain transistor, and the second floating diffusion through a second dual conversion gain transistor; wherein the capacitor is formed in an area covering most of the first shared pixel, the second shared pixel, the third shared pixel, and the fourth shared pixel.

    FIXED PATTERN NOISE REDUCTION IN IMAGE SENSORS

    公开(公告)号:US20180103221A1

    公开(公告)日:2018-04-12

    申请号:US15291917

    申请日:2016-10-12

    Abstract: Systems and methods for fixed pattern noise reduction in image sensors is disclosed herein. An example method may include simultaneously providing a pixel reference voltage of a pixel to a reference sampling capacitor and a signal sampling capacitor, decoupling the reference sampling capacitor from the pixel, providing a signal voltage to the signal sampling capacitor, and decoupling the signal sampling capacitor from the pixel.

    Programmable current source for a time of flight 3D image sensor

    公开(公告)号:US09658336B2

    公开(公告)日:2017-05-23

    申请号:US14464453

    申请日:2014-08-20

    CPC classification number: G01S17/89 G01S7/4863 G01S17/10

    Abstract: A programmable current source for use with a time of flight pixel cell includes a first transistor. A current through the first transistor is responsive to a gate-source voltage of the first transistor. A current control circuit is coupled to the first transistor and coupled to a reference current source to selectively couple a reference current of the reference current source through the first transistor during a sample operation. A sample and hold circuit is coupled to the first transistor to sample a gate-source voltage of the first transistor during the sample operation. The sample and hold circuit is coupled to hold the gate-source voltage during a hold operation after the sample operation substantially equal to the gate-source voltage during the sample operation. A hold current through the first transistor during the hold operation is substantially equal to the reference current.

    Pixel-level oversampling for a time of flight 3D image sensor with dual range measurements
    67.
    发明授权
    Pixel-level oversampling for a time of flight 3D image sensor with dual range measurements 有权
    具有双范围测量的飞行3D图像传感器的像素级过采样

    公开(公告)号:US09523765B2

    公开(公告)日:2016-12-20

    申请号:US14330212

    申请日:2014-07-14

    CPC classification number: G01S7/4865 G01S7/4863 G01S17/105 G01S17/89

    Abstract: A time of flight pixel cell includes a photosensor to sense photons reflected from an object. Pixel support circuitry including charging control logic is coupled to the photosensor to detect when the photosensor senses the photons reflected from the object, and coupled to receive timing signals representative of when light pulses are emitted from a light source. A controllable current source is coupled to receive a time of flight signal form the charging control logic to provide a charge current when a light pulse emitted from the light source until the photosensor senses a respective one of the photons reflected from the object. A capacitor is coupled to receive the charge current, and a voltage on the capacitor is representative of a round trip distance to the object. A reset circuit is coupled to reset the voltage on the capacitor after being charged a plurality number of times.

    Abstract translation: 飞行时间像素单元包括用于感测从物体反射的光子的光电传感器。 包括充电控制逻辑的像素支持电路耦合到光传感器以检测何时光传感器感测从物体反射的光子,并耦合以接收表示从光源发出光脉冲的定时信号。 耦合可控电流源以从充电控制逻辑接收飞行时间信号,以在从光源发射的光脉冲直到光敏传感器感测从物体反射的相应的一个光子时提供充电电流。 电容器被耦合以接收充电电流,并且电容器上的电压代表到物体的往返距离。 复位电路被耦合以在多次充电之后复位电容器上的电压。

    Precharged latched pixel cell for a time of flight 3D image sensor
    69.
    发明授权
    Precharged latched pixel cell for a time of flight 3D image sensor 有权
    预充电锁存像素单元,用于飞行时间3D图像传感器

    公开(公告)号:US09313476B2

    公开(公告)日:2016-04-12

    申请号:US14454542

    申请日:2014-08-07

    CPC classification number: H04N13/271 G01S7/4863 G01S17/89 H04N13/254

    Abstract: A pixel cell includes a latch having an input terminal and an output terminal. The latch is coupled to provide a latched output signal at the output terminal responsive to the input terminal. A first precharge circuit is coupled to precharge the input terminal of the latch to a first level during a reset of the pixel cell. A single photon avalanche photodiode (SPAD) is coupled to provide a SPAD signal to the input terminal of the latch in response to a detection of a photon incident on the SPAD.

    Abstract translation: 像素单元包括具有输入端和输出端的锁存器。 锁存器被耦合以响应于输入端在输出端提供锁存的输出信号。 第一预充电电路被耦合以在像素单元的复位期间将锁存器的输入端子预充电到第一电平。 耦合单个光子雪崩光电二极管(SPAD)以响应于对入射在SPAD上的光子的检测而向锁存器的输入端提供SPAD信号。

    Stacked chip SPAD image sensor
    70.
    发明授权
    Stacked chip SPAD image sensor 有权
    堆叠芯片SPAD图像传感器

    公开(公告)号:US09299732B2

    公开(公告)日:2016-03-29

    申请号:US14065275

    申请日:2013-10-28

    Abstract: An example imaging sensor system includes a Single-Photon Avalanche Diode (SPAD) imaging array formed in a first semiconductor layer of a first wafer. The SPAD imaging array includes an N number of pixels, each including a SPAD region formed in a front side of the first semiconductor layer. The first wafer is bonded to a second wafer at a bonding interface between a first interconnect layer of the first wafer and the second interconnect layer of the second wafer. An N number of digital counters are formed in a second semiconductor layer of the second wafer. Each of the digital counters are configured to count output pulses generated by a respective SPAD region.

    Abstract translation: 示例性成像传感器系统包括形成在第一晶片的第一半导体层中的单光子雪崩二极管(SPAD)成像阵列。 SPAD成像阵列包括N个像素,每个像素包括形成在第一半导体层的前侧的SPAD区域。 第一晶片在第一晶片的第一互连层和第二晶片的第二互连层之间的接合界面处接合到第二晶片。 N个数字计数器形成在第二晶片的第二半导体层中。 每个数字计数器被配置为对相应SPAD区域产生的输出脉冲进行计数。

Patent Agency Ranking