Anti-reflective coating with high refractive index material at air interface

    公开(公告)号:US11075239B2

    公开(公告)日:2021-07-27

    申请号:US16816683

    申请日:2020-03-12

    Abstract: An optical element comprising a transparent substrate and an anti-reflective coating, wherein the anti-reflective coating further comprises at least a transparent, high refractive index layer and a transparent, low refractive index layer, wherein the high refractive index layer is in contact with the low refractive index layer; and wherein the high refractive index layer is situated at an interface between the anti-reflective coating and air. Further, the low refractive index layer may be silicon oxide; the high refractive index layer may be tantalum oxide or silicon nitride.

    Image-sensor package and associated method

    公开(公告)号:US10998361B2

    公开(公告)日:2021-05-04

    申请号:US16139019

    申请日:2018-09-22

    Abstract: An image-sensor package includes a cover glass, an image sensor, and an integrated circuit. The cover glass has a cover-glass bottom surface, to which the image sensor is bonded. The integrated circuit is beneath the cover-glass bottom surface, adjacent to the image sensor, and electronically connected to the image sensor. A method for packaging an image sensor includes attaching an image sensor to a cover-glass bottom surface of a cover glass, a light-sensing region of the image sensor facing the cover-glass bottom surface. The method also includes attaching an integrated circuit to the cover-glass bottom surface, a top IC-surface of the integrated circuit facing the cover-glass bottom surface.

    Chip-scale image sensor package and associated method of making

    公开(公告)号:US10256266B2

    公开(公告)日:2019-04-09

    申请号:US15480131

    申请日:2017-04-05

    Abstract: A chip-scale image sensor package includes a semiconductor substrate, a transparent substrate, a thin film, and a plurality of conductive pads. The semiconductor substrate has (i) a pixel array, and (ii) a peripheral region surrounding the pixel array. The transparent substrate covers the pixel array, has a bottom substrate surface proximate the pixel array, and a top substrate surface opposite the bottom substrate surface. The thin film is on a region of the top substrate surface directly above both (i) the entire pixel array and (ii) a portion of the peripheral region adjacent to the pixel array. Each of the plurality of conductive pads is located within the peripheral region, and is electrically connected to the pixel array. A portion of each of the plurality of conductive pads is not directly beneath the thin film.

    System-in-package image sensor
    64.
    发明授权

    公开(公告)号:US10243014B2

    公开(公告)日:2019-03-26

    申请号:US15899900

    申请日:2018-02-20

    Abstract: A method of image sensor package fabrication includes forming a cavity in a ceramic substrate, and placing an image sensor in the cavity in the ceramic substrate. An image sensor processor is also placed in the cavity in the ceramic substrate, and the image sensor and the image sensor processor are wire bonded to electrical contacts. Glue is deposited on the ceramic substrate, and a glass layer is placed on the glue to adhere the glass layer to the ceramic substrate. The image sensor processor and the image sensor are disposed in the cavity between the glass layer and the ceramic substrate.

    Trenched device wafer, stepped-sidewall device die, and associated method

    公开(公告)号:US10163954B2

    公开(公告)日:2018-12-25

    申请号:US15096136

    申请日:2016-04-11

    Abstract: A trenched device wafer includes a device substrate layer having a top surface; a plurality of devices in the device substrate layer, and a trench in the top surface. The trench extends into the device substrate layer, and is located between a pair of adjacent devices of the plurality of devices. A method for forming a device die from a device wafer includes forming a trench in a top surface of the device wafer between two adjacent devices of the device wafer. The trench has a bottom surface located (a) at a first depth beneath the top surface and (b) at a first height above a wafer bottom surface. The method also includes, after forming the trench, decreasing a thickness of the device wafer, between the two adjacent devices, to a thickness less than the first height.

    Image device having efficient heat transfer, and associated systems
    69.
    发明授权
    Image device having efficient heat transfer, and associated systems 有权
    具有有效传热的图像装置和相关系统

    公开(公告)号:US09258465B2

    公开(公告)日:2016-02-09

    申请号:US14151406

    申请日:2014-01-09

    Abstract: An imaging device provides efficient heat transfer by orienting components of the imaging device such that heat is transferred out of the imaging device instead of within the imaging device assembly. Heat is transferred out of the imaging device assembly through a printed circuit board to which the assembly housing is mounted thereon and/or through the housing itself.

    Abstract translation: 成像装置通过使成像装置的部件定向而使得热量从成像装置而不是在成像装置组件内传送出来而提供有效的热传递。 热量通过印刷电路板从成像设备组件传送出去,组装壳体上安装有和/或通过壳体本身。

    Infrared Reflection/Absorption Layer For Reducing Ghost Image of Infrared Reflection Noise And Image Sensor Using the Same
    70.
    发明申请
    Infrared Reflection/Absorption Layer For Reducing Ghost Image of Infrared Reflection Noise And Image Sensor Using the Same 有权
    红外反射/吸收层,用于减少红外反射噪声和图像传感器的鬼影

    公开(公告)号:US20150228680A1

    公开(公告)日:2015-08-13

    申请号:US14696630

    申请日:2015-04-27

    Abstract: An image sensor includes a photosensing element for receiving infrared (IR) radiation and detecting the IR radiation and generating an electrical signal indicative of the IR radiation. A redistribution layer (RDL) is disposed under the photosensing element, the RDL comprising pattern of conductors for receiving the electrical signal. An IR reflection layer, an IR absorption layer or an isolation layer is disposed between the photosensing element and the RDL. The IR reflection layer, IR absorption layer or isolation layer provides a barrier to IR radiation such that the IR radiation does not impinge upon the RDL. As a result, a ghost image of the RDL is not generated, resulting in reduced noise and improved sensitivity and performance of the image sensor.

    Abstract translation: 图像传感器包括用于接收红外(IR)辐射和检测IR辐射并产生指示IR辐射的电信号的光敏元件。 再分配层(RDL)设置在光敏元件下方,RDL包括用于接收电信号的导体图案。 在感光元件和RDL之间设置IR反射层,IR吸收层或隔离层。 IR反射层,IR吸收层或隔离层为IR辐射提供了屏障,使得IR辐射不会撞击RDL。 结果,不产生RDL的重影,导致图像传感器的噪音降低和灵敏度和性能的提高。

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