摘要:
A solid catalyst component for .alpha.-olefin polymerization containing as catalyst components at least titanium, magnesium and chlorine which are impregnated into an organic porous polymer carrier having a mean particle diameter of 5 to 1,000 .mu.m and a pore volume of 0.1 ml/g or above at a pore radius of 100 to 5,000 .ANG., a catalyst system comprising at least said solid catalyst component (A) and an organoaluminum compound (B), as well as a process for producing .alpha.-olefin polymers using said catalyst system.
摘要:
A process for producing a highly stereospecific .alpha.-olefin polymer which comprises homopolymerizing or copolymerizing an .alpha.-olefin or copolymerizing an .alpha.-olefin with ethylene by the use of a catalyst system comprising:(A) a solid catalyst component containing a trivalent titanium compound obtained by reducing a titanium compound represented by the following general formula:Ti(OR.sup.1).sub.n X.sub.4-n (R.sup.1 represents a hydrocarbon group having 1 to 20 carbon atoms, X represents a halogen atom and n represents a number satisfying 0
摘要:
This invention relates to a protection device of a semiconductor device. The present invention can prevent the drop of a gate breakdown voltage due to miniaturization of a device without impeding the high speed performance of the circuit attached thereto. The invention improves the voltage that can be applied to the input terminal of the device by reducing the surface breakdown voltage of a surface breakdown type MOS transistor, which is a principal member of a protection device, and reducing the resistance after the breakdown. This can be accomplished, for example, by increasing the concentration of a region in which the MOS transistor is disposed, by reducing the depth of the region, and so forth.
摘要:
Disclosed is a semiconductor integrated circuit which comprises an n-type silicon substrate, a p-type well region having an opening at a part thereof, which is formed on the surface portion of the substrate, an MOS transistor formed in the p-type region and a resistance layer extended from the drain region of the MOS transistor to the opening of the p-type well region through a insulating film formed on the surface of the substrate, in which the drain region of the MOS transistor is electrically connected to the silicon substrate through the resistance layer so that a current is supplied to the MOS transistor.
摘要:
A method for the production of a solid titanium trichloride catalyst by the steps of preparing a titanium trichloride composition comprising a solid reduction product obtained by reducing titanium tetrachloride with an organoaluminum compound represented by the formula, R.sup.1.sub.n AlY.sub.3-n (wherein R.sup.1 is a hydrocarbon group having 1 to 18 carbon atoms; Y is a halogen atom or a hydrogen atom; and n is a number satisfying the equation, 1
摘要:
A process for producing highly stereoregular .alpha.-olefin polymers which comprises polymerizing .alpha.-olefins in the presence of a catalyst system comprising:(A) a solid catalyst obtained by contact reaction between(a) a solid product prepared by reacting an organo-magnesium compound with at least one of halogenated silicon compound (I) and halogenated aluminum compound (II) in a solvent and(b) a titanium compound having both titanium-aryloxy and titanium-halogen linkages, and(B) an organo-aluminum compound as an activating agent.
摘要:
7.alpha.-Methoxy-3-p-sulfooxy or p-hydroxycinnamoyloxymethyl cephalosporin derivatives which are useful as antibiotics and as intermediates for the production of other 7.alpha.-methoxycephalosporin derivatives.
摘要:
A solid catalyst for polymerization of olefins prepared by treatment of a titanium trichloride composition with a mixture of (1) a halogen, an interhalogen compound or a halogenated hydrocarbon compound, and (2) an ether which, in combination with organoaluminum compounds as activators, can be used to polymerize olefins for the efficient production of highly crystalline olefin polymers.
摘要:
A plurality of inner leads, a plurality of outer leads formed in one with each of the inner lead, a bar lead of the square ring shape arranged inside a plurality of inner leads, a corner part lead which has been arranged between the inner leads of the end portion of the inner lead groups which adjoin among four inner lead groups corresponding to each side of the bar lead, and was connected with the bar lead, and a tape member joined to the tip part of each inner lead, a bar lead, and a corner part lead are included. Since the corner part lead is formed as an object for reinforcement of a frame body between adjoining inner lead groups, the rigidity of the lead frame can be increased.
摘要:
Disclosed is a nonvolatile memory system including at least one nonvolatile memory each having a plurality of nonvolatile memory cells and a buffer memory; and a control device coupled to the nonvolatile memory. The control device is enabled to receive external data and to apply the data to the nonvolatile memory, and the nonvolatile memory is enabled to operate a program operation including storing the received data to the buffer memory and storing the data held in the buffer memory to ones of nonvolatile memory cells. Moreover, the control device is enabled to receive external data while the nonvolatile memory is operating in the program operation. Also, the buffer memory is capable of receiving a unit of data, equal to the data length of data to be stored at one time of the program operation, the data length being more than 1 byte.