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109 条记录 (耗时 0.031 秒)

    Method of forming a recessed interconnect structure
    62.
    发明授权
    Method of forming a recessed interconnect structure 失效
    形成凹陷互连结构的方法

    公开(公告)号：US5767012A

    公开(公告)日：1998-06-16

    申请号：US660674

    申请日：1996-06-05

    申请人： H. Jim Fulford, Jr. ,  Basab Bandyopadhyay ,  Robert Dawson ,  Fred N. Hause ,  Mark W. Michael ,  William S. Brennan

    发明人： H. Jim Fulford, Jr. ,  Basab Bandyopadhyay ,  Robert Dawson ,  Fred N. Hause ,  Mark W. Michael ,  William S. Brennan

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L23/52 ,  H01L23/522 ,  H01L27/04 ,  H01L21/283

    CPC分类号： H01L23/5222 ,  H01L21/768 ,  H01L2924/0002

    摘要： A method of forming a recessed interconnect structure is provided. The interconnect structure includes several levels of conductors, wherein conductors on one level are staggered with respect to conductors on another level. In densely spaced interconnect areas, interposed conductors are drawn to dissimilar elevational levels to lessen the capacitive coupling between the interconnects. By staggering every other interconnect line in the densely patterned areas, the interconnects are capable of carrying a larger amount of current with minimal capacitive coupling therebetween. The method of forming a recessed interconnect structure comprises forming a substantially coplanar set of the first conductors upon a semiconductor substrate, depositing a first dielectric layer on said first conductors, forming a trench in the first dielectric layer, depositing a conductive material in the trench, planarizing the conductive material an upper surface of the conductive material is substantially coplanar with an upper surface of the first dielectric, etching the conductive material until the upper surface of the conductive material is displaced below the upper surface of the first dielectric, forming a second dielectric on the conductive material and the first dielectric layer.

    摘要翻译： 提供一种形成凹陷互连结构的方法。 互连结构包括多个级别的导体，其中一个层上的导体相对于另一层上的导体交错。 在密集间隔的互连区域中，插入的导体被拉至不同的高度级以减小互连之间的电容耦合。 通过交错密集图案化区域中的每隔一个互连线，互连能够承载更大量的电流并且在其间具有最小的电容耦合。 形成凹陷互连结构的方法包括在半导体衬底上形成基本共面的第一导体组，在第一导体上沉积第一电介质层，在第一电介质层中形成沟槽，在沟槽中沉积导电材料， 对导电材料进行平面化，导电材料的上表面与第一电介质的上表面基本共面，蚀刻导电材料，直到导电材料的上表面位于第一电介质的上表面以下，形成第二电介质 在导电材料和第一介电层上。

    Integrated circuit having interconnect lines separated by a dielectric having a capping layer
    67.
    发明授权
    Integrated circuit having interconnect lines separated by a dielectric having a capping layer 有权
    具有由具有封盖层的电介质隔开的互连线的集成电路

    公开(公告)号：US6153833A

    公开(公告)日：2000-11-28

    申请号：US148098

    申请日：1998-09-04

    申请人： Robert Dawson ,  Mark W. Michael ,  Basab Bandyopadhyay ,  H. Jim Fulford, Jr. ,  Fred N. Hause ,  William S. Brennan

    发明人： Robert Dawson ,  Mark W. Michael ,  Basab Bandyopadhyay ,  H. Jim Fulford, Jr. ,  Fred N. Hause ,  William S. Brennan

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/312 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L23/52 ,  H01L23/522 ,  H01L23/528 ,  H01L27/04 ,  H05K1/03

    CPC分类号： H01L23/5222 ,  H01L23/5226 ,  H01L23/5283 ,  H01L2924/0002

    摘要： An improved multilevel interconnect structure is provided. The interconnect structure includes several levels of conductors, wherein conductors on one level are staggered with respect to conductors on another level. Accordingly, a space between conductors on one level is directly above or directly below a conductor within another level. The staggered interconnect lines are advantageously used in densely spaced regions to reduce the interlevel and intralevel capacitance. Furthermore, an interlevel and an intralevel dielectric structure includes optimally placed low K dielectrics which exist in critical spaced areas to minimize capacitive coupling and propagation delay problems. The low K dielectric, according to one embodiment, includes a capping dielectric which is used to prevent corrosion on adjacent metallic conductors, and serves as an etch stop when conductors are patterned. The capping dielectric further minimizes the overall intrinsic stress of the resulting intralevel and interlevel dielectric structure.

    摘要翻译： 提供了一种改进的多级互连结构。 互连结构包括多个级别的导体，其中一个层上的导体相对于另一层上的导体交错。 因此，在一个级别上的导体之间的空间位于另一层内的导体的正上方或正下方。 交错的互连线有利地用于密集间隔的区域以减少层间和层间电容。 此外，层间和层间介质结构包括存在于临界间隔区域中的最佳放置的低K电介质，以最小化电容耦合和传播延迟问题。 根据一个实施例的低K电介质包括封盖电介质，其用于防止相邻金属导体上的腐蚀，并且当导体被图案化时用作蚀刻停止层。 封盖电介质进一步最小化所得到的层间和层间电介质结构的整体固有应力。

    Dissolvable dielectric method and structure
    69.
    发明授权
    Dissolvable dielectric method and structure 有权
    溶解介电法和结构

    公开(公告)号：US6091149A

    公开(公告)日：2000-07-18

    申请号：US251059

    申请日：1999-02-18

    申请人： Fred N. Hause ,  Basab Bandyopadhyay ,  Robert Dawson ,  H. Jim Fulford, Jr. ,  Mark W. Michael ,  William S. Brennan

    发明人： Fred N. Hause ,  Basab Bandyopadhyay ,  Robert Dawson ,  H. Jim Fulford, Jr. ,  Mark W. Michael ,  William S. Brennan

    IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L21/7682

    摘要： A fabrication process is provided that produces an air gap dielectric in which a multi-level interconnect structure is formed upon a temporary supporting material. The temporary material is subsequently dissolved away leaving behind an intralevel and an interlevel dielectric comprised of air. In one embodiment of the invention, a first interconnect level is formed on a barrier layer. A temporary support material is then formed over the first interconnect level and a second level of interconnect is formed on the temporary support material. Prior to formation of the second interconnect level, a plurality of pillar openings are formed in the temporary material and filled with a conductive material. In addition to providing a contact between the first and second level of interconnects, the pillars provide mechanical support for the second interconnect level. The temporary material is dissolved in a solution that attacks the temporary material but leaves the interconnect material and pillar material intact. In one embodiment of the invention, a passivation layer is formed on the second interconnect level prior to dissolving the temporary material. The air gap dielectric can be used with more than two levels of interconnect, if desired.

    摘要翻译： 提供一种制造工艺，其产生气隙电介质，其中在临时支撑材料上形成多层互连结构。 随后将临时材料溶解掉，留下由空气组成的层间和层间电介质。 在本发明的一个实施例中，在阻挡层上形成第一互连电平。 然后在第一互连层上形成临时支撑材料，并在临时支撑材料上形成第二层互连。 在形成第二互连级别之前，在临时材料中形成多个柱状开口并填充有导电材料。 除了在第一和第二级互连之间提供接触之外，支柱为第二互连电平提供机械支撑。 临时材料溶解在攻击临时材料的溶液中，但使互连材料和支柱材料完好无损。 在本发明的一个实施例中，在溶解临时材料之前，在第二互连层上形成钝化层。 如果需要，气隙电介质可以与多于两个级别的互连一起使用。

    Mask generation technique for producing an integrated circuit with optimal metal interconnect layout for achieving global planarization
    70.
    发明授权
    Mask generation technique for producing an integrated circuit with optimal metal interconnect layout for achieving global planarization 失效
    用于制造具有最佳金属互连布局以实现全局平坦化的集成电路的掩模生成技术

    公开(公告)号：US6049134A

    公开(公告)日：2000-04-11

    申请号：US15821

    申请日：1998-01-29

    申请人： Mark W. Michael ,  Robert Dawson ,  Fred N. Hause ,  Basab Bandyopadhyay ,  H. Jim Fulford, Jr. ,  William S. Brennan

    发明人： Mark W. Michael ,  Robert Dawson ,  Fred N. Hause ,  Basab Bandyopadhyay ,  H. Jim Fulford, Jr. ,  William S. Brennan

    IPC分类号： H01L21/033 ,  H01L21/3105 ,  H01L21/768 ,  H01L29/72 ,  H01L21/283

    CPC分类号： H01L21/0334 ,  H01L21/31051 ,  H01L21/76819

    摘要： A photolithography mask derivation process is provided for improving the overall planarity of interlevel dielectric deposited upon conductors formed by the derived photolithography mask. The photolithography mask is derived such that non-operational conductors are spaced a minimum distance from each other and from operational conductors to present a regular spaced arrangement of conductors upon which a dielectric layer can be deposited and readily planarized using, for example, chemical-mechanical polishing techniques. The resulting interlevel dielectric upper surface is globally planarized to an even elevational level across the entire semiconductor topography. The operational conductors are dissimilar from non-operational conductors in that the operational conductors are connected within a circuit path of an operational integrated circuit. Non-operational conductors are not connected within the integrated circuit path and generally are floating or are connected to a power supply. The non-operational conductors thereby do not contribute to the integrated circuit functionality other than to provide structural planarity to the overlying interlevel dielectric. The mask derivation process is applicable to either a metal interconnect photolithography mask or a polysilicon interconnect photolithography mask.

    摘要翻译： 提供了一种光刻掩模衍生方法，用于改善沉积在由衍生的光刻掩模形成的导体上的层间电介质的整体平面性。 衍生出光刻掩模，使得非操作导体彼此间隔开最小距离和与操作导体间隔开的规则间隔排列的导体，其上可使用例如化学机械的电介质层沉积并容易地平坦化 抛光技术。 所得的层间电介质上表面在整个半导体形貌上被全局平坦化到均匀的高度。 操作导体与非操作导体不相似，因为操作导体连接在可操作的集成电路的电路中。 非操作导体不在集成电路路径内连接，并且通常浮动或连接到电源。 因此，非操作导体对集成电路功能没有贡献，而不是为覆盖的层间电介质提供结构平面性。 掩模推导方法适用于金属互连光刻掩模或多晶硅互连光刻掩模。