公开(公告)号：US09508549B2

公开(公告)日：2016-11-29

申请号：US14972522

申请日：2015-12-17

Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

Inventor： Jong Keun Park ,  Phillip D. Hustad ,  Emad Aqad ,  Mingqi Li ,  Cheng-Bai Xu ,  Peter Trefonas, III ,  James W. Thackeray

IPC: H01L21/02

CPC classification number: H01L21/02359 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02203 ,  H01L21/02343 ,  H01L21/3105 ,  H01L21/76826

Abstract: Methods of forming an electronic device comprise: (a) providing a semiconductor substrate comprising a porous feature on a surface thereof; (b) applying a composition over the porous feature, wherein the composition comprises a polymer and a solvent, wherein the polymer comprises a repeat unit of the following general formula (I): wherein: Ar1, Ar2, Ar3 and Ar4 independently represent an optionally substituted divalent aromatic group; X1 and X2 independently represent a single bond, —O—, —C(O)—, —C(O)O—, —OC(O)—, —C(O)NR1—, —NR2C(O)—, —S—, —S(O)—, —SO2— or an optionally substituted C1-20 divalent hydrocarbon group, wherein R1 and R2 independently represent H or a C1-20 hydrocarbyl group; m is 0 or 1; n is 0 or 1; and o is 0 or 1; and (c) heating the composition; wherein the polymer is disposed in pores of the porous feature. The methods find particular applicability in the manufacture of semiconductor devices for forming low-k and ultra-low-k dielectric materials.

公开(公告)号：US20160189953A1

公开(公告)日：2016-06-30

申请号：US14972522

申请日：2015-12-17

Applicant: Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

Inventor： Jong Keun Park ,  Phillip D. Hustad ,  Emad Aqad ,  Mingqi Li ,  Cheng-Bai Xu ,  Peter Trefonas, III ,  James W. Thackeray

IPC: H01L21/02

CPC classification number: H01L21/02359 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02203 ,  H01L21/02343 ,  H01L21/3105 ,  H01L21/76826

Abstract: Methods of forming an electronic device comprise: (a) providing a semiconductor substrate comprising a porous feature on a surface thereof; (b) applying a composition over the porous feature, wherein the composition comprises a polymer and a solvent, wherein the polymer comprises a repeat unit of the following general formula (I): wherein: Ar1, Ar2, Ar3 and Ar4 independently represent an optionally substituted divalent aromatic group; X1 and X2 independently represent a single bond, —O—, —C(O)—, —C(O)O—, —OC(O)—, —C(O)NR1—, —NR2C(O)—, —S—, —S(O)—, —SO2— or an optionally substituted C1-20 divalent hydrocarbon group, wherein R1 and R2 independently represent H or a C1-20 hydrocarbyl group; m is 0 or 1; n is 0 or 1; and o is 0 or 1; and (c) heating the composition; wherein the polymer is disposed in pores of the porous feature. The methods find particular applicability in the manufacture of semiconductor devices for forming low-k and ultra-low-k dielectric materials.

Abstract translation: 形成电子器件的方法包括：（a）提供在其表面上包括多孔特征的半导体衬底; （b）在多孔特征上施用组合物，其中所述组合物包含聚合物和溶剂，其中所述聚合物包含以下通式（I）的重复单元：其中：Ar1，Ar2，Ar3和Ar4独立地表示任选地 取代二价芳基; X1和X2独立地表示单键，-O - ， - C（O） - ， - C（O）O-，-OC（O） - ， - C（O）NR 1 - ，-NR 2 C（O） -S - ， - S（O） - ， - SO 2 - 或任选取代的C 1-20二价烃基，其中R 1和R 2独立地表示H或C 1-20烃基; m为0或1; n为0或1; o为0或1; 和（c）加热组合物; 其中所述聚合物设置在所述多孔特征的孔中。 该方法在用于形成低k和超低k电介质材料的半导体器件的制造中具有特别的适用性。

公开(公告)号：US20160185984A1

公开(公告)日：2016-06-30

申请号：US14972529

申请日：2015-12-17

Applicant: Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

Inventor： Emad Aqad ,  Jong Keun Park ,  Phillip D. Hustad ,  Mingqi Li ,  Cheng-Bai Xu ,  Peter Trefonas, III ,  James W. Thackeray

IPC: C09D5/34 ,  C09D161/16 ,  H01L21/02 ,  C09D171/12

CPC classification number: C09D5/34 ,  C08G65/4012 ,  C08G65/4043 ,  C08G65/485 ,  C09D161/16 ,  C09D171/00 ,  C09D171/12 ,  H01B3/307 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02343

Abstract: A composition comprising a polymer and a solvent, wherein the polymer comprises: a repeat unit of the following general formula (I): wherein: Ar1, Ar2, Ar3 and Ar4 independently represent an optionally substituted divalent aromatic group; X1 and X2 independently represent a single bond, —O—, —C(O)—, —C(O)O—, —OC(O)—, —C(O)NR1—, —NR2C(O)—, —S—, —S(O)—, —SO2— or an optionally substituted C1-20 divalent hydrocarbon group, wherein R1 and R2 independently represent H or a C1-20 hydrocarbyl group; m is 0 or 1; n is 0 or 1; and o is 0 or 1; and an endcapping group that is free of polymerizable vinyl groups and hydroxyl groups. The compositions find particular applicability in the manufacture of semiconductor devices for forming low-k and ultra-low-k dielectric materials.

Abstract translation: 一种包含聚合物和溶剂的组合物，其中所述聚合物包含：以下通式（I）的重复单元：其中：Ar1，Ar2，Ar3和Ar4独立地表示任选取代的二价芳族基团; X1和X2独立地表示单键，-O - ， - C（O） - ， - C（O）O-，-OC（O） - ， - C（O）NR 1 - ，-NR 2 C（O） -S - ， - S（O） - ， - SO 2 - 或任选取代的C 1-20二价烃基，其中R 1和R 2独立地表示H或C 1-20烃基; m为0或1; n为0或1; o为0或1; 和不含可聚合乙烯基和羟基的封端基。 该组合物特别适用于制造用于形成低k和超低k电介质材料的半导体器件。

公开(公告)号：US09229319B2

公开(公告)日：2016-01-05

申请号：US14527961

申请日：2014-10-30

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

Inventor： Vipul Jain ,  Owendi Ongayi ,  James W. Thackeray ,  James F. Cameron

IPC: G03F7/039 ,  C08F220/22 ,  C08F220/30 ,  G03F7/20 ,  G03F7/004 ,  C08F220/28

CPC classification number: G03F7/004 ,  C08F220/28 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2004 ,  C08F220/18 ,  C08F220/24 ,  C08F220/38

Abstract: A copolymer include repeat units derived from an acid-labile monomer, an aliphatic lactone-containing monomer, a C1-12 alkyl(meth)acrylate in which the C1-12 alkyl group includes a specific base-soluble group, a photoacid-generating monomer that includes an aliphatic anion, and a neutral aromatic monomer having the formula wherein R1, R2, R3, X, m, and Ar are defined herein. The copolymer is used as a component of a photoresist composition. A coated substrate including a layer of the photoresist composition, and a method of forming an electronic device using the coated substrate are described.

Abstract translation: 共聚物包括衍生自酸不稳定单体，含脂肪族内酯的单体，C1-12烷基（甲基）丙烯酸酯的重复单元，其中C1-12烷基包括特定的碱溶性基团，光产酸单体 其包括脂族阴离子和具有下式的中性芳族单体其中R1，R2，R3，X，m和Ar如本文所定义。 共聚物用作光致抗蚀剂组合物的组分。 描述了包括光致抗蚀剂组合物层的涂覆基材，以及使用该涂布基板形成电子器件的方法。

公开(公告)号：US09182669B2

公开(公告)日：2015-11-10

申请号：US14527884

申请日：2014-10-30

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

Inventor： Owendi Ongayi ,  Vipul Jain ,  James F. Cameron ,  James W. Thackeray ,  Suzanne Coley

IPC: G03F7/039 ,  C08F220/30 ,  G03F7/038

CPC classification number: G03F7/038 ,  C08F220/30 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397

Abstract: A copolymer includes repeat units derived from a lactone-substituted monomer, a base-soluble monomer having a pKa less than or equal to 12, a photoacid-generating monomer, and an acid-labile monomer having the formula wherein R1, R2, R3, and Ar are defined herein. The copolymer can be used as a component of a photoresist composition, and the photoresist composition can be coated on a substrate having one or more layers to be patterned, or used in a method of forming an electronic device.

Abstract translation: 共聚物包括衍生自内酯取代单体的重复单元，pKa小于或等于12的碱溶性单体，产生光酸的单体和具有下式的酸不稳定单体：其中R1，R2，R3， 和Ar。 共聚物可以用作光致抗蚀剂组合物的组分，并且光致抗蚀剂组合物可以涂覆在具有一层或多层待图案化的基材上，或者用于形成电子器件的方法中。

公开(公告)号：US20150177613A1

公开(公告)日：2015-06-25

申请号：US14527961

申请日：2014-10-30

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

Inventor： Vipul Jain ,  Owendi Ongayi ,  James W. Thackeray ,  James F. Cameron

IPC: G03F7/004 ,  G03F7/20 ,  C08F28/02

CPC classification number: G03F7/004 ,  C08F220/28 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2004 ,  C08F220/18 ,  C08F220/24 ,  C08F220/38

Abstract: A copolymer include repeat units derived from an acid-labile monomer, an aliphatic lactone-containing monomer, a C1-12 alkyl (meth)acrylate in which the C1-12 alkyl group includes a specific base-soluble group, a photoacid-generating monomer that includes an aliphatic anion, and a neutral aromatic monomer having the formula wherein R1, R2, R3, X, m, and Ar are defined herein. The copolymer is used as a component of a photoresist composition. A coated substrate including a layer of the photoresist composition, and a method of forming an electronic device using the coated substrate are described.

Abstract translation: 共聚物包括衍生自酸不稳定单体，含脂肪族内酯的单体，C1-12烷基（甲基）丙烯酸酯的重复单元，其中C1-12烷基包括特定的碱溶性基团，光产酸单体 其包括脂族阴离子和具有下式的中性芳族单体其中R1，R2，R3，X，m和Ar如本文所定义。 共聚物用作光致抗蚀剂组合物的组分。 描述了包括光致抗蚀剂组合物层的涂覆基材，以及使用该涂布基板形成电子器件的方法。