公开(公告)号：US20170140804A1

公开(公告)日：2017-05-18

申请号：US15043349

申请日：2016-02-12

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Shuxia Wang ,  Jang-Eun Lee

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L27/22 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/5607 ,  H01F10/3259 ,  H01F10/329 ,  H01L27/222 ,  H01L27/224 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic junction usable in a magnetic device is described. The magnetic junction has a free layer, a reference layer, and a nonmagnetic spacer layer between reference and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a length in a first direction, a width in a second direction perpendicular to the first direction, an exchange stiffness and an aspect ratio equal to the length divided by the width. The aspect ratio is greater than one. The exchange stiffness is not less than 2×10−6 erg/cm.

公开(公告)号：US09478730B2

公开(公告)日：2016-10-25

申请号：US13865445

申请日：2013-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Roman Chepulskyy ,  Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy

IPC: G11C11/56 ,  H01L29/74 ,  H01L29/82 ,  H01L43/10 ,  G11B5/33 ,  H01L43/08 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161

Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the pinned layer and the free layer includes a magnetic substructure. The magnetic substructure includes at least two magnetic layers interleaved with at least one insertion layer. Each of the at least one insertion layer includes at least one of Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb, and Zr. The at least two magnetic layers are magnetically coupled.

Abstract translation: 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括钉扎层，非磁性间隔层和自由层。 非磁性间隔层位于被钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 被钉扎层和自由层中的至少一个包括磁性子结构。 磁性子结构包括与至少一个插入层交错的至少两个磁性层。 所述至少一个插入层中的至少一个包含Bi，W，I，Zn，Nb，Ag，Cd，Hf，Os，Mo，Ca，Hg，Sc，Y，Sr，Mg，Ti，Ba，K ，Na，Rb，Pb和Zr。 至少两个磁性层磁耦合。

公开(公告)号：US20160197264A1

公开(公告)日：2016-07-07

申请号：US14981228

申请日：2015-12-28

Applicant: Samsung Electronics Co., LTD.

Inventor： Alexey Vasilyevitch Khvalkovskiy ,  Dmytro Apalkov

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L43/10 ,  H01L29/82 ,  H01L43/00 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic junction usable in a magnetic device is described. The magnetic junction includes a first reference layer, first and second spacer layers, a free layer and a self-initializing (SI) substructure. The first spacer layer is between the free and first reference layers. The free layer is switchable between stable magnetic states when a write current having at least a critical magnitude is passed through the magnetic junction. The second spacer layer is between the SI substructure and the free layer. The SI substructure is selected from first, second and third substructures. The first and second substructures include an SI reference layer having a magnetic moment switchable between the first and second directions when a current having a magnitude of not more than one-half of the critical magnitude is passed through the magnetic junction. The third substructure includes a temperature dependent reference layer.

Abstract translation: 描述可用于磁性装置的磁结。 磁结包括第一参考层，第一和第二间隔层，自由层和自初始化（SI）子结构。 第一间隔层位于游离和第一参考层之间。 当具有至少临界大小的写入电流通过磁结时，自由层可在稳定磁状态之间切换。 第二间隔层位于SI子结构和自由层之间。 SI子结构选自第一，第二和第三子结构。 第一和第二子结构包括具有可在第一和第二方向之间切换的磁矩的SI参考层，当具有不超过临界大小的二分之一的幅度的电流通过磁结时。 第三子结构包括温度依赖参考层。

公开(公告)号：US09287322B2

公开(公告)日：2016-03-15

申请号：US14704341

申请日：2015-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Roman Chepulskyy ,  Dmytro Apalkov

IPC: H01L29/82 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L27/222 ,  H01L27/226 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. The method includes providing a reference layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the free and reference layers. An interface is between the nonmagnetic spacer and free layers. Providing the free layer further includes applying at least one electric field while the free layer is at a local temperature above an operating temperature of the magnetic junction. The electric field(s) exert a force on an anion in the free layer in a direction away from the interface between the free layer and the nonmagnetic spacer layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了一种用于提供可用于磁性装置和磁结的磁结的方法。 该方法包括提供参考层，非磁性间隔层和自由层。 非磁性间隔层位于游离层和参考层之间。 接口位于非磁性间隔物和自由层之间。 提供自由层还包括施加至少一个电场，同时自由层处于高于磁结的操作温度的局部温度。 电场在离开自由层和非磁性间隔层之间的界面的方向上对自由层中的阴离子施加力。 磁结被配置为使得当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。

公开(公告)号：US20160005449A1

公开(公告)日：2016-01-07

申请号：US14730379

申请日：2015-06-04

Applicant: Samsung Electronics Co., LTD.

Inventor： Matthew J. Carey ,  Dmytro Apalkov ,  Keith Chan

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02 ,  H01L43/12

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic junction usable in magnetic devices is described. The magnetic junction includes a reference layer, a free layer, a nonmagnetic spacer layer between the reference and free layers, and a rare earth-transition metal (RE-TM) layer in the reference and/or free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. If the RE-TM layer is in the free layer then the RE-TM layer is between hard and soft magnetic layers in the free layer. In this aspect, the RE-TM layer has a standby magnetic moment greater than a write magnetic moment. If the RE-TM layer is in the reference layer, then the magnetic junction includes a second RE-TM layer. In this aspect, a first saturation magnetization quantity of the RE-TM layer matches a second saturation magnetization quantity of the second RE-TM layer over an operating temperature range.

Abstract translation: 描述了可用于磁性装置的磁结。 磁结包括参考层，自由层，参考层和自由层之间的非磁性间隔层，以及参考和/或自由层中的稀土 - 过渡金属（RE-TM）层。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。 如果RE-TM层在自由层中，那么RE-TM层在自由层的硬磁层和软磁层之间。 在这方面，RE-TM层具有大于写入磁矩的待机磁矩。 如果RE-TM层在参考层中，则磁结包括第二RE-TM层。 在这方面，RE-TM层的第一饱和磁化量在工作温度范围内匹配第二RE-TM层的第二饱和磁化量。

公开(公告)号：US09203017B2

公开(公告)日：2015-12-01

申请号：US14325049

申请日：2014-07-07

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Vladimir Nikitin ,  Alexey Vasilyevitch Khvalkovskiy

IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22

CPC classification number: H01L43/12 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic includes a pinned layer, a nonmagnetic spacer layer, a free layer, and package structure(s). The pinned layer has a pinned layer perimeter and a top surface. The nonmagnetic spacer layer is on at least part of the top surface and between the pinned and free layers. The free layer has a free layer perimeter. The package structure(s) are ferromagnetic and encircles at least one of the free layer and the pinned layer. The package structure(s) are ferromagnetically coupled with the pinned layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁性包括钉扎层，非磁性间隔层，自由层和封装结构。 被钉扎层具有钉扎层周边和顶表面。 非磁性间隔层位于顶表面的至少一部分之间以及被钉扎层和自由层之间。 自由层具有自由层周长。 封装结构是铁磁性的并且包围自由层和钉扎层中的至少一个。 封装结构与固定层铁磁耦合。 磁结被配置为使得当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。

公开(公告)号：US20150295167A1

公开(公告)日：2015-10-15

申请号：US14613936

申请日：2015-02-04

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy

IPC: H01L43/10 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01L43/10 ,  H01L43/08

Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer has a gradient in a magnetic ordering temperature such that a first portion of the free layer has a first magnetic ordering temperature higher than a second magnetic ordering temperature of a second portion of the free layer. The first portion of the free layer is closer to the reference layer than the second portion of the free layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括参考层，非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 自由层具有磁顺序温度的梯度，使得自由层的第一部分具有高于自由层的第二部分的第二磁性有序温度的第一磁性有序温度。 自由层的第一部分比自由层的第二部分更靠近参考层。 磁结被配置为使得当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。

公开(公告)号：US20150294707A1

公开(公告)日：2015-10-15

申请号：US14563307

申请日：2014-12-08

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Roman Chepulskyy

IPC: G11C11/16 ,  H01L43/10 ,  H01L27/22 ,  H01L43/02

CPC classification number: G11C11/1675 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic junction usable in magnetic devices is described. The magnetic junction includes at least one reference layer, at least one nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer(s) are between the reference layer(s) and the free layer. The free layer has a magnetic thermal stability coefficient having a plurality of magnetic thermal stability coefficient phases. A first phase magnetic thermal stability coefficient has a first slope below a first temperature. A second phase magnetic thermal stability coefficient has a second slope above the first temperature and below a second temperature greater than the first temperature. The first and second slopes are unequal at the first temperature. The magnetic thermal stability coefficient is zero only above the second temperature. The free layer is switchable between stable magnetic states when a write current passed through the magnetic junction.

Abstract translation: 描述了可用于磁性装置的磁结。 磁结包括至少一个参考层，至少一个非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 自由层具有具有多个磁热稳定系数相的磁热稳定系数。 第一相磁性热稳定系数具有低于第一温度的第一斜率。 第二相磁性热稳定系数具有高于第一温度的第二斜率，并且低于大于第一温度的第二温度。 第一和第二斜坡在第一个温度下不相等。 磁热稳定系数仅在第二温度以上为零。 当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。

公开(公告)号：US09029965B2

公开(公告)日：2015-05-12

申请号：US14026386

申请日：2013-09-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eugene Chen ,  Dmytro Apalkov

IPC: H01L27/22 ,  H01L43/08 ,  G11C11/16 ,  H01L43/12

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/12

Abstract: A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer includes a plurality of subregions. Each of the subregions has a magnetic thermal stability constant. The subregions are ferromagnetically coupled such that the free layer has a total magnetic thermal stability constant. The magnetic thermal stability constant is such that the each of the subregions is magnetically thermally unstable at an operating temperature. The total magnetic thermal stability constant is such that the free layer is magnetically thermally stable at the operating temperature. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层和自由层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层包括多个子区域。 每个子区具有磁热稳定性常数。 这些子区域被铁磁耦合，使得自由层具有总的磁热稳定性常数。 磁性热稳定性常数使得每个子区域在工作温度下是磁不热的。 总磁热稳定性常数使得自由层在工作温度下是磁性热稳定的。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

公开(公告)号：US20150035099A1

公开(公告)日：2015-02-05

申请号：US14325049

申请日：2014-07-07

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Vladimir Nikitin ,  Alexey Vasilyevitch Khvalkovskiy

IPC: H01L43/10 ,  H01L27/22 ,  H01L43/02

CPC classification number: H01L43/12 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic includes a pinned layer, a nonmagnetic spacer layer, a free layer, and package structure(s). The pinned layer has a pinned layer perimeter and a top surface. The nonmagnetic spacer layer is on at least part of the top surface and between the pinned and free layers. The free layer has a free layer perimeter. The package structure(s) are ferromagnetic and encircles at least one of the free layer and the pinned layer. The package structure(s) are ferromagnetically coupled with the pinned layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁性包括钉扎层，非磁性间隔层，自由层和封装结构。 被钉扎层具有钉扎层周边和顶表面。 非磁性间隔层位于顶表面的至少一部分之间以及被钉扎层和自由层之间。 自由层具有自由层周长。 封装结构是铁磁性的并且包围自由层和钉扎层中的至少一个。 封装结构与固定层铁磁耦合。 磁结被配置为使得当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。