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150 条记录 (耗时 0.039 秒)

    X-ray detector including oxide semiconductor transistor
    62.
    发明授权
    X-ray detector including oxide semiconductor transistor 有权
    X射线检测器包括氧化物半导体晶体管

    公开(公告)号：US08963096B2

    公开(公告)日：2015-02-24

    申请号：US12926921

    申请日：2010-12-17

    申请人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Chang-jung Kim

    发明人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Chang-jung Kim

    IPC分类号： H01L27/146 ,  G01T1/24 ,  H01L31/08

    CPC分类号： H01L31/085 ,  G01T1/24

    摘要： Example embodiments are directed an X-ray detector including an oxide semiconductor transistor. The X-ray detector including the oxide semiconductor transistor includes an oxide semiconductor transistor and a signal storage capacitor in parallel to each other on a substrate. The oxide semiconductor transistor includes a channel formed of an oxide semiconductor material, and a photoconductor. A pixel electrode and a common electrode are formed on opposite surfaces of the photoconductor. The channel includes ZnO, or a compound including ZnO and at least one selected from a group consisting of gallium (Ga), indium (In), hafnium (Hf), and tin (Sn).

    摘要翻译： 示例性实施例涉及包括氧化物半导体晶体管的X射线检测器。 包括氧化物半导体晶体管的X射线检测器包括在基板上彼此平行的氧化物半导体晶体管和信号存储电容器。 氧化物半导体晶体管包括由氧化物半导体材料形成的沟道和感光体。 像素电极和公共电极形成在感光体的相对表面上。 该通道包括ZnO或包含ZnO和选自镓（Ga），铟（In），铪（Hf）和锡（Sn）中的至少一种的化合物。

    PIXEL DEVICE, AND RADIATION DETECTING MODULE AND APPARATUS HAVING THE SAME
    65.
    发明申请
    PIXEL DEVICE, AND RADIATION DETECTING MODULE AND APPARATUS HAVING THE SAME 有权
    像素装置和辐射检测模块以及具有该装置的装置

    公开(公告)号：US20120318989A1

    公开(公告)日：2012-12-20

    申请号：US13433985

    申请日：2012-03-29

    申请人： Jae-chul Park ,  Young Kim ,  Chang-jung Kim

    发明人： Jae-chul Park ,  Young Kim ,  Chang-jung Kim

    IPC分类号： G01T1/20 ,  H01L27/146 ,  H01L31/00

    CPC分类号： H01L27/14609 ,  A61B6/037 ,  G01T1/2006 ,  G01T1/2018 ,  G01T1/208 ,  H01L27/14618 ,  H01L27/14663 ,  H01L2924/0002 ,  H04N5/3698 ,  H01L2924/00

    摘要： A pixel device having an improved energy resolution includes at least one photodiode and at least one voltage supply unit for applying a voltage to the photodiode. The pixel device includes a voltage storage unit and a voltage adjusting unit. In a precharge mode, the voltage storage unit stores a first anode voltage. In a sensing mode, the voltage adjusting unit adjusts a second anode voltage of the anode of the photodiode to be the same as the first anode voltage stored in the voltage storage unit.

    摘要翻译： 具有改善的能量分辨率的像素装置包括至少一个光电二极管和用于向光电二极管施加电压的至少一个电压供应单元。 像素装置包括电压存储单元和电压调节单元。 在预充电模式中，电压存储单元存储第一阳极电压。 在感测模式中，电压调节单元将光电二极管的阳极的第二阳极电压调整为与存储在电压存储单元中的第一阳极电压相同。

    Resistive random access memory devices and resistive random access memory arrays having the same
    66.
    发明授权
    Resistive random access memory devices and resistive random access memory arrays having the same 有权
    电阻随机存取存储器件和具有相同功能的电阻随机存取存储器阵列

    公开(公告)号：US08278640B2

    公开(公告)日：2012-10-02

    申请号：US12805783

    申请日：2010-08-19

    申请人： Dong-soo Lee ,  Chang-bum Lee ,  Chang-jung Kim

    发明人： Dong-soo Lee ,  Chang-bum Lee ,  Chang-jung Kim

    IPC分类号： H01L29/02

    CPC分类号： G11C11/5685 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/56 ,  G11C2213/71 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

    摘要： A resistive random access memory (RRAM) devices and resistive random access memory (RRAM) arrays are provided, the RRAM devices include a first electrode layer, a variable resistance material layer formed of an oxide of a metallic material having a plurality of oxidation states, an intermediate electrode layer on the variable resistance material layer and formed of a conductive material having a lower reactivity with oxygen than the metallic material, and a second electrode layer on the intermediate electrode layer. The RRAM arrays include at least one of the aforementioned RRAM devices.

    摘要翻译： 提供了电阻随机存取存储器（RRAM）器件和电阻随机存取存储器（RRAM）阵列，RRAM器件包括第一电极层，由具有多个氧化态的金属材料的氧化物形成的可变电阻材料层， 所述可变电阻材料层上的中间电极层由与所述金属材料相比氧的反应性低的导电材料和所述中间电极层上的第二电极层形成。 RRAM阵列包括至少一个上述RRAM设备。

    Large-scale X-ray detectors and methods of manufacturing the same
    67.
    发明申请
    Large-scale X-ray detectors and methods of manufacturing the same 有权
    大型X射线探测器及其制造方法

    公开(公告)号：US20110309259A1

    公开(公告)日：2011-12-22

    申请号：US12929203

    申请日：2011-01-07

    申请人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Chang-jung Kim

    发明人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Chang-jung Kim

    IPC分类号： G01T1/24 ,  H01L31/18

    CPC分类号： G01T1/24 ,  H01L24/24 ,  H01L24/73 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14676 ,  H01L27/14687 ,  H01L31/085 ,  H01L2224/16225 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00

    摘要： Large-scale X-ray detectors and methods of manufacturing the same are provided, the large-scale X-ray detectors include a photoconductor layer configured to generate electrical charges according to an incident X-ray using an entire area of the photoconductor layer, a common electrode on an upper surface of the photoconductor layer, a plurality of pixel electrodes, configured to convert the electrical charges into electrical signals, on a lower surface of the photoconductor layer and divided into a plurality of groups, and a plurality of application-specific integrated circuits (ASICs) each corresponding to one of the groups. Each ASIC is configured to process the electrical signals conveyed via the pixel electrodes in the corresponding group. The ASICs process the electrical signals so that seamless image information is collectively generated by the ASICs with respect to the entire area of the photoconductor layer.

    摘要翻译： 提供了大规模X射线检测器及其制造方法，大规模X射线检测器包括：光电导体层，被配置为根据入射的X射线使用光电导体层的整个面积产生电荷; 所述光电导体层的上表面上的公共电极，被配置为将所述电荷转换为电信号的多个像素电极，在所述感光体层的下表面上并分成多个组，以及多个应用特定 集成电路（ASIC），每个对应于该组中的一个。 每个ASIC被配置为处理通过相应组中的像素电极传送的电信号。 ASIC处理电信号，使得ASIC相对于感光体层的整个区域共同地产生无缝图像信息。

    Transistor, method of manufacturing transistor, and electronic device including transistor
    69.
    发明申请
    Transistor, method of manufacturing transistor, and electronic device including transistor 有权
    晶体管，制造晶体管的方法和包括晶体管的电子器件

    公开(公告)号：US20110147734A1

    公开(公告)日：2011-06-23

    申请号：US12801531

    申请日：2010-06-14

    申请人： Sang-wook Kim ,  Sun-il Kim ,  Chang-jung Kim ,  Jae-chul Park

    发明人： Sang-wook Kim ,  Sun-il Kim ,  Chang-jung Kim ,  Jae-chul Park

    IPC分类号： H01L29/786 ,  H01L21/44

    CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78696

    摘要： Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a gate insulator of which at least one surface is treated with plasma. The surface of the gate insulator may be an interface that contacts a channel layer. The interface may be treated with plasma by using a fluorine (F)-containing gas, and thus may include fluorine (F). The interface treated with plasma may suppress the characteristic variations of the transistor due to light.

    摘要翻译： 提供晶体管，晶体管的制造方法和包括该晶体管的电子器件。 晶体管可以包括栅极绝缘体，其中至少一个表面被等离子体处理。 栅极绝缘体的表面可以是与沟道层接触的界面。 界面可以通过使用含氟（F）的气体用等离子体处理，因此可以包括氟（F）。 用等离子体处理的界面可以抑制由于光引起的晶体管的特性变化。

    Inverter, method of manufacturing the same, and logic circuit including the inverter
    70.
    发明申请
    Inverter, method of manufacturing the same, and logic circuit including the inverter 有权
    逆变器及其制造方法以及包括逆变器的逻辑电路

    公开(公告)号：US20100264956A1

    公开(公告)日：2010-10-21

    申请号：US12591654

    申请日：2009-11-25

    申请人： Huaxiang Yin ,  I-hun Song ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

    发明人： Huaxiang Yin ,  I-hun Song ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

    IPC分类号： H03K19/20 ,  H01L21/70 ,  H01L27/088

    CPC分类号： H01L21/823807 ,  H01L27/0922 ,  H01L27/1225 ,  H01L27/1251

    摘要： Provided are an inverter, a method of manufacturing the inverter, and a logic circuit including the inverter. The inverter may include a first transistor and a second transistor having different channel layer structures. A channel layer of the first transistor may include a lower layer and an upper layer, and a channel layer of the second transistor may be the same as one of the lower layer and the upper layer. At least one of the lower layer and the upper layer may be an oxide layer. The inverter may be an enhancement/depletion (E/D) mode inverter or a complementary inverter.

    摘要翻译： 提供逆变器，逆变器的制造方法以及包括逆变器的逻辑电路。 反相器可以包括具有不同沟道层结构的第一晶体管和第二晶体管。 第一晶体管的沟道层可以包括下层和上层，并且第二晶体管的沟道层可以与下层和上层之一相同。 下层和上层中的至少一层可以是氧化物层。 逆变器可以是增强/耗尽型（E / D）型逆变器或互补型逆变器。